JPWO2024171669A1 - - Google Patents
Info
- Publication number
- JPWO2024171669A1 JPWO2024171669A1 JP2025500722A JP2025500722A JPWO2024171669A1 JP WO2024171669 A1 JPWO2024171669 A1 JP WO2024171669A1 JP 2025500722 A JP2025500722 A JP 2025500722A JP 2025500722 A JP2025500722 A JP 2025500722A JP WO2024171669 A1 JPWO2024171669 A1 JP WO2024171669A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025188436A JP2026009407A (ja) | 2023-02-13 | 2025-11-07 | エッチング方法及びプラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023020225 | 2023-02-13 | ||
| JP2023020225 | 2023-02-13 | ||
| PCT/JP2024/000496 WO2024171669A1 (ja) | 2023-02-13 | 2024-01-11 | エッチング方法及びプラズマ処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025188436A Division JP2026009407A (ja) | 2023-02-13 | 2025-11-07 | エッチング方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024171669A1 true JPWO2024171669A1 (https=) | 2024-08-22 |
| JPWO2024171669A5 JPWO2024171669A5 (https=) | 2025-09-24 |
| JP7774375B2 JP7774375B2 (ja) | 2025-11-21 |
Family
ID=92421503
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025500722A Active JP7774375B2 (ja) | 2023-02-13 | 2024-01-11 | エッチング方法及びプラズマ処理装置 |
| JP2025188436A Pending JP2026009407A (ja) | 2023-02-13 | 2025-11-07 | エッチング方法及びプラズマ処理装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025188436A Pending JP2026009407A (ja) | 2023-02-13 | 2025-11-07 | エッチング方法及びプラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250357136A1 (https=) |
| JP (2) | JP7774375B2 (https=) |
| KR (1) | KR20250150572A (https=) |
| CN (1) | CN120642031A (https=) |
| TW (1) | TW202503886A (https=) |
| WO (1) | WO2024171669A1 (https=) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014096499A (ja) * | 2012-11-09 | 2014-05-22 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
| US20190051526A1 (en) * | 2017-08-10 | 2019-02-14 | Samsung Electronics Co., Ltd. | Method of manufacturing integrated circuit device |
| JP2021077865A (ja) * | 2019-11-08 | 2021-05-20 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP2021093523A (ja) * | 2019-12-10 | 2021-06-17 | 東京エレクトロン株式会社 | 基板上のパターン形状を制御する方法及び装置 |
| WO2022230118A1 (ja) * | 2021-04-28 | 2022-11-03 | 東京エレクトロン株式会社 | エッチング方法 |
| WO2022234640A1 (ja) * | 2021-05-07 | 2022-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018200925A (ja) | 2017-05-25 | 2018-12-20 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
-
2024
- 2024-01-11 CN CN202480010282.5A patent/CN120642031A/zh active Pending
- 2024-01-11 KR KR1020257029718A patent/KR20250150572A/ko active Pending
- 2024-01-11 WO PCT/JP2024/000496 patent/WO2024171669A1/ja not_active Ceased
- 2024-01-11 JP JP2025500722A patent/JP7774375B2/ja active Active
- 2024-01-30 TW TW113103506A patent/TW202503886A/zh unknown
-
2025
- 2025-08-05 US US19/291,186 patent/US20250357136A1/en active Pending
- 2025-11-07 JP JP2025188436A patent/JP2026009407A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014096499A (ja) * | 2012-11-09 | 2014-05-22 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
| US20190051526A1 (en) * | 2017-08-10 | 2019-02-14 | Samsung Electronics Co., Ltd. | Method of manufacturing integrated circuit device |
| JP2021077865A (ja) * | 2019-11-08 | 2021-05-20 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP2021093523A (ja) * | 2019-12-10 | 2021-06-17 | 東京エレクトロン株式会社 | 基板上のパターン形状を制御する方法及び装置 |
| WO2022230118A1 (ja) * | 2021-04-28 | 2022-11-03 | 東京エレクトロン株式会社 | エッチング方法 |
| WO2022234640A1 (ja) * | 2021-05-07 | 2022-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2026009407A (ja) | 2026-01-19 |
| KR20250150572A (ko) | 2025-10-20 |
| CN120642031A (zh) | 2025-09-12 |
| WO2024171669A1 (ja) | 2024-08-22 |
| US20250357136A1 (en) | 2025-11-20 |
| JP7774375B2 (ja) | 2025-11-21 |
| TW202503886A (zh) | 2025-01-16 |
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