WO2024171669A1 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

Info

Publication number
WO2024171669A1
WO2024171669A1 PCT/JP2024/000496 JP2024000496W WO2024171669A1 WO 2024171669 A1 WO2024171669 A1 WO 2024171669A1 JP 2024000496 W JP2024000496 W JP 2024000496W WO 2024171669 A1 WO2024171669 A1 WO 2024171669A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
etching
film
carbon
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/000496
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
広記 向山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN202480010282.5A priority Critical patent/CN120642031A/zh
Priority to JP2025500722A priority patent/JP7774375B2/ja
Priority to KR1020257029718A priority patent/KR20250150572A/ko
Publication of WO2024171669A1 publication Critical patent/WO2024171669A1/ja
Priority to US19/291,186 priority patent/US20250357136A1/en
Anticipated expiration legal-status Critical
Priority to JP2025188436A priority patent/JP2026009407A/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • An exemplary embodiment of the present disclosure relates to an etching method and a plasma processing apparatus.
  • Japanese Patent Application Laid-Open No. 2003-233693 discloses a technique for etching an organic film using O 2 gas and COS gas.
  • This disclosure provides technology that prevents mask openings from becoming blocked.
  • an etching method includes the steps of: (a) providing a substrate having a carbon-containing film and a mask on the carbon-containing film on a substrate support in a chamber; and (b) etching the carbon-containing film using a plasma generated from a first process gas, the first process gas including a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas, or including a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas.
  • a technology can be provided that suppresses mask opening blockage.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing apparatus.
  • FIG. 1 is a diagram for explaining a configuration example of an inductively coupled plasma processing apparatus.
  • FIG. 13 is a diagram for explaining an example of opening blocking.
  • 2 is a flowchart according to the first embodiment. 2 is a diagram showing an example of a cross-sectional structure of a substrate W provided in a process ST11.
  • FIG. 11 is a diagram for explaining an example of a phenomenon that occurs in step ST12.
  • FIG. 10 is a flowchart according to a second embodiment.
  • 11 is a diagram for explaining an example of a phenomenon that occurs in a repeated cycle of steps ST22 and ST23.
  • FIG. 13 is a flowchart according to a modified example of the second embodiment.
  • FIG. 13 is a flowchart according to a modified example of the second embodiment.
  • FIG. 2 is a diagram showing the results of etching in Example 1 and Reference Example 1.
  • FIG. 13 is a diagram showing the results of etching in Example 2 and Reference Example 1.
  • FIG. 13 is a diagram showing the results of etching in Example 2 and Reference Example 1.
  • an etching method includes the steps of: (a) providing a substrate having a carbon-containing film and a mask on the carbon-containing film on a substrate support in a chamber; and (b) etching the carbon-containing film using a plasma generated from a first process gas, the first process gas including a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas, or a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas.
  • (c) further includes the step of etching the carbon-containing film using a plasma generated from a second process gas different from the first process gas, the second process gas including an oxygen-containing gas and a sulfur-containing gas, or including an oxygen- and sulfur-containing gas.
  • the second process gas does not include a halogenated phosphorus gas.
  • the second process gas contains a halogenated phosphorus gas at a flow rate less than the halogenated phosphorus gas contained in the first process gas.
  • the ratio of the etching time in step (c) to the etching time in step (b) is 0.8 or more and 1.2 or less.
  • a cycle including steps (b) and (c) is repeated multiple times.
  • the ratio of the etching time in step (c) to the etching time in step (b) is greater than the ratio in the first cycle.
  • the temperature of the substrate support in at least one cycle after the second is set to be higher than the temperature of the substrate support in the first cycle.
  • the halogenated phosphorus gas includes at least one gas selected from the group consisting of phosphorus fluoride gas, phosphorus chloride gas, phosphorus oxyfluoride gas, and phosphorus oxychloride gas.
  • the halogenated phosphorus gas includes at least one gas selected from the group consisting of PF3 gas, PF5 gas, and PCl3 gas.
  • the flow rate of the halogenated phosphorus gas in the first process gas is 5 volume percent or less of the total flow rate of the first process gas.
  • the oxygen-containing gas comprises at least one gas selected from the group consisting of O2 gas, CO gas, and CO2 gas.
  • the oxygen and sulfur-containing gas is at least one of COS gas and SO2 gas.
  • the sulfur-containing gas is SF6 gas.
  • the mask includes a silicon-containing film or a metal-containing film.
  • the carbon-containing film includes an amorphous carbon film.
  • step (b) the temperature of the substrate support is set to 0 degrees or less.
  • step (c) the temperature of the substrate support is set to 0 degrees or less.
  • a plasma processing apparatus has a chamber and a controller, and the controller performs the following operations: (a) providing a substrate having a carbon-containing film and a mask on the carbon-containing film on a substrate support in the chamber; and (b) etching the carbon-containing film using plasma generated from a first process gas, the first process gas including a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas, or a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas.
  • control unit further performs control (c) to etch the carbon-containing film using plasma generated from a second process gas different from the first process gas, the second process gas including an oxygen-containing gas and a sulfur-containing gas, or including oxygen and a sulfur-containing gas.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing apparatus.
  • the plasma processing apparatus 1 is an example of a substrate processing apparatus.
  • the plasma processing apparatus 1 includes a control unit 2, a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12.
  • the plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space.
  • the gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later.
  • the substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.
  • the plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • the plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP), etc.
  • various types of plasma generating units may be used, including AC (Alternating Current) plasma generating units and DC (Direct Current) plasma generating units.
  • the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz.
  • AC signals include RF (Radio Frequency) signals and microwave signals.
  • the RF signal has a frequency in the range of 100 kHz to 150 MHz.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein.
  • a part or all of the control unit 2 may be configured as a system external to the plasma processing apparatus 1.
  • the control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3.
  • the control unit 2 is realized, for example, by a computer 2a.
  • the processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed.
  • the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
  • the processing unit 2a1 may be a CPU (Central Processing Unit).
  • the memory unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof.
  • the communication interface 2a3 may communicate with each element of the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).
  • FIG. 1 is a diagram for explaining an example of the configuration of an inductively coupled plasma processing device.
  • the inductively coupled plasma processing apparatus 1 includes a control unit 2, a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40.
  • the plasma processing chamber 10 includes a dielectric window 101.
  • the plasma processing apparatus 1 also includes a substrate support unit 11, a gas introduction unit, and an antenna 14.
  • the substrate support unit 11 is disposed in the plasma processing chamber 10 (hereinafter also referred to as "chamber 10").
  • the antenna 14 is disposed on or above the plasma processing chamber 10 (i.e. on or above the dielectric window 101).
  • the plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, the sidewall 102 of the plasma processing chamber 10, and the substrate support unit 11.
  • the plasma processing chamber 10 is grounded.
  • the substrate support 11 includes a main body 111 and a ring assembly 112.
  • the main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112.
  • a wafer is an example of a substrate W.
  • the annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view.
  • the substrate W is disposed on the central region 111a of the main body 111
  • the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.
  • the main body 111 includes a base 1110 and an electrostatic chuck 1111.
  • the base 1110 includes a conductive member.
  • the conductive member of the base 1110 may function as a bias electrode.
  • the electrostatic chuck 1111 is disposed on the base 1110.
  • the electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a.
  • the ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b.
  • the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member.
  • at least one RF/DC electrode coupled to an RF power source 31 and/or a DC power source 32, which will be described later, may be disposed within the ceramic member 1111a.
  • the at least one RF/DC electrode functions as a bias electrode.
  • the conductive member of the base 1110 and the at least one RF/DC electrode may function as multiple bias electrodes.
  • the electrostatic electrode 1111b may function as a bias electrode.
  • the substrate support 11 includes at least one bias electrode.
  • the ring assembly 112 includes one or more annular members.
  • the one or more annular members include one or more edge rings and at least one cover ring.
  • the edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.
  • the substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature.
  • the temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof.
  • a heat transfer fluid such as brine or a gas flows through the flow passage 1110a.
  • the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111.
  • the substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.
  • the gas introduction section is configured to introduce at least one processing gas from the gas supply section 20 into the plasma processing space 10s.
  • the gas introduction section includes a center gas injector (CGI) 13.
  • the center gas injector 13 is disposed above the substrate support section 11 and is attached to a central opening formed in the dielectric window 101.
  • the center gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet port 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet port 13c.
  • the gas introduction section may include one or more side gas injectors (SGI) attached to one or more openings formed in the sidewall 102.
  • SGI side gas injectors
  • the gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22.
  • the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the gas inlet via a corresponding flow controller 22.
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.
  • the power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit.
  • the RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and the antenna 14. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s.
  • the RF power supply 31 can function as at least a part of the plasma generating unit 12.
  • a bias RF signal to at least one bias electrode, a bias potential is generated on the substrate W, and ions in the formed plasma can be attracted to the substrate W.
  • the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b.
  • the first RF generating unit 31a is coupled to the antenna 14 via at least one impedance matching circuit and configured to generate a source RF signal (source RF power) for plasma generation.
  • the source RF signal has a frequency in the range of 10 MHz to 150 MHz.
  • the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.
  • the second RF generating unit 31b is coupled to at least one bias electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power).
  • the frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal.
  • the bias RF signal has a lower frequency than the frequency of the source RF signal.
  • the bias RF signal has a frequency in the range of 100 kHz to 60 MHz.
  • the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are supplied to at least one bias electrode.
  • at least one of the source RF signal and the bias RF signal may be pulsed.
  • the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10.
  • the DC power supply 32 includes a bias DC generator 32a.
  • the bias DC generator 32a is connected to at least one bias electrode and configured to generate a bias DC signal. The generated bias DC signal is applied to the at least one bias electrode.
  • the bias DC signal may be pulsed.
  • a sequence of voltage pulses is applied to at least one bias electrode.
  • the voltage pulses may have a rectangular, trapezoidal, triangular, or combination of these pulse waveforms.
  • a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the bias DC generator 32a and at least one bias electrode.
  • the bias DC generator 32a and the waveform generator constitute a voltage pulse generator.
  • the voltage pulses may have a positive polarity or a negative polarity.
  • the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period.
  • the bias DC generator 32a may be provided in addition to the RF power source 31 or may be provided instead of the second RF generator 31b.
  • the antenna 14 includes one or more coils.
  • the antenna 14 may include an outer coil and an inner coil arranged coaxially.
  • the RF power source 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil.
  • the same RF generator may be connected to both the outer coil and the inner coil, or separate RF generators may be connected separately to the outer coil and the inner coil.
  • the exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10.
  • the exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • Opening blockage it is known that in etching using plasma, the openings in the mask may narrow or become blocked (hereinafter also referred to as "opening blockage"). When opening blockage occurs, it may cause the etching process to stop or shape abnormalities such as bowing to occur. Opening blockage may occur when deposition material in the plasma adheres to the sidewall of the opening, or when mask material sputtered by ions in the plasma re-adheres to the sidewall of the opening.
  • FIG. 3 is a diagram showing an example of the blocking of an opening.
  • the example shown in FIG. 3 is an example in which a substrate W is etched using plasma generated from a processing gas consisting of O 2 gas and COS gas.
  • the substrate W has an undercoat film UF, a carbon-containing film OF, and a mask MK having an opening OP.
  • the carbon-containing film OF is an amorphous carbon film
  • the mask MK is a silicon oxynitride (SiON) film.
  • a deposit DP adheres to the side wall S1 of the mask MK, blocking the opening OP.
  • the deposit DP may include, for example, a mask material (silicon in this example) sputtered by ions in the plasma.
  • this method An etching method according to one exemplary embodiment of the present disclosure (hereinafter referred to as “this method”) can suppress such opening blockage. An example of this method will be described below with reference to the drawings.
  • First Embodiment Fig. 4 is a flow chart according to a first embodiment of the present method.
  • the present method may include a step ST11 of providing a substrate and a step ST12 of performing a first etching.
  • the treatment in each step may be performed by the above-mentioned plasma processing apparatus 1.
  • the control unit 2 controls each part of the inductively coupled plasma processing apparatus 1 (see Fig. 2) to perform the present method on a substrate W.
  • Step ST11 Providing a substrate
  • a substrate W is provided in a plasma processing space 10s of the plasma processing apparatus 1.
  • the substrate W is carried into the chamber 10 by a transport arm and placed on the central region 111a of the substrate support 11.
  • the substrate W is attracted and held on the substrate support 11 by an electrostatic chuck 1111.
  • FIG. 5 is a diagram showing an example of a cross-sectional structure of a substrate W provided in step ST11.
  • the substrate W has a carbon-containing film OF and a mask MK.
  • the substrate W may further include an undercoat film UF.
  • the substrate W may be used in the manufacture of semiconductor devices.
  • the semiconductor devices include, for example, semiconductor memory devices such as DRAMs and 3D-NAND flash memories.
  • the base film UF is a silicon wafer, an organic film, a dielectric film, a metal film, a semiconductor film, or a laminated film of these formed on a silicon wafer.
  • the base film UF may include a silicon-containing film.
  • the silicon-containing film may be, for example, a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a polycrystalline silicon film, or a laminated film containing two or more of these films.
  • the silicon-containing film may be, for example, a silicon oxide film and a silicon nitride film alternately laminated.
  • the silicon-containing film may be, for example, a silicon oxide film and a polycrystalline silicon film alternately laminated.
  • the silicon-containing film may be, for example, a laminated film containing a silicon nitride film, a silicon oxide film, and a polycrystalline silicon film.
  • the carbon-containing film OF is an organic film.
  • the carbon-containing film OF is a film to be etched in the present method.
  • the carbon-containing film OF is an amorphous carbon film, a spin-on carbon (SOC) film, or a photoresist film.
  • the amorphous carbon (ACL) film may be doped with an element such as boron, and may be, for example, a boron-containing amorphous carbon film (B-doped ACL), an arsenic-containing amorphous carbon film (As-doped ACL), a tungsten-containing amorphous carbon film (W-doped ACL), or a xenon-containing amorphous carbon film (Xe-doped ACL).
  • the carbon-containing film OF may be composed of a single film, or may be composed of a plurality of films stacked together.
  • the mask MK is formed from a material having a lower etching rate for the plasma generated in step ST12 than the carbon-containing film OF.
  • the mask MK includes a silicon-containing film or a metal-containing film.
  • the silicon-containing film may be, for example, a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a polycrystalline silicon film, or a laminated film including two or more of these films.
  • the silicon-containing film may be, for example, a silicon oxide film and a silicon nitride film that are alternately laminated.
  • the silicon-containing film may be, for example, a silicon oxide film and a polycrystalline silicon film that are alternately laminated.
  • the silicon-containing film may be, for example, a laminated film including a silicon nitride film, a silicon oxide film, and a polycrystalline silicon film.
  • the metal-containing film may be, for example, a film including at least one selected from the group consisting of tungsten, titanium, and molybdenum.
  • the mask MK may have a pattern that is transferred to the carbon-containing film OF by etching.
  • the mask MK may be a single layer mask or a multilayer mask consisting of two or more layers.
  • the mask MK has a sidewall S1 that defines at least one opening OP on the carbon-containing film OF.
  • the opening OP is a space above the carbon-containing film OF and is surrounded by the sidewall S1 of the mask MK. That is, the upper surface of the carbon-containing film OF has an area covered by the mask MK and an area exposed at the bottom of the opening OP.
  • the openings OP may have any shape when viewed from above the substrate W, i.e., when the substrate W is viewed from top to bottom in FIG. 5.
  • the shape may be, for example, a circle, an ellipse, a rectangle, a line, or a combination of one or more of these.
  • the mask MK may have multiple side walls that define multiple openings OP.
  • the multiple openings OP may each have a linear shape and be arranged at regular intervals to form a line-and-space pattern (trench).
  • the multiple openings OP may also each have a hole shape and form an array pattern.
  • Each film constituting the substrate W may be formed by a CVD method, an ALD method, a PVD method, a spin coating method, or the like.
  • the opening OP in the mask MK may be formed by etching the mask MK, or may be formed by lithography. Each film may be flat or may have irregularities.
  • the substrate W may further have another film below the undercoat film UF. In this case, a recess having a shape corresponding to the opening OP may be formed in the carbon-containing film OF and the undercoat film UF, and used as a mask for etching the other film.
  • At least a part of the process of forming each film on the substrate W may be performed within the space of the chamber 10.
  • the process of etching the mask MK to form the opening OP may be performed in the chamber 10. That is, the opening OP and the etching of the carbon-containing film OF in step ST12 described below may be performed consecutively in the same chamber.
  • the substrate W may be provided by being carried into the plasma processing space 10s of the plasma processing apparatus 1 and being placed in the central region 111a of the substrate support 11.
  • the substrate support 11 is controlled to a first temperature by a temperature control module.
  • controlling the temperature of the substrate support 11 to a first temperature includes setting the temperature of the heat transfer fluid flowing through the flow path 1110a or the heater temperature to the first temperature, or to a temperature different from the first temperature.
  • the timing at which the heat transfer fluid starts to flow through the flow path 1110a may be before or after the substrate W is placed on the substrate support 11, or may be simultaneous.
  • the temperature of the substrate support 11 may be controlled to the first temperature before step ST11. That is, the substrate W may be provided to the substrate support 11 after the temperature of the substrate support 11 is controlled to the first temperature.
  • the first temperature may be set appropriately depending on the type of carbon-containing film OF and the type of processing gas (first processing gas) used in step ST12. In one embodiment, the first temperature is 0 degrees or less and -70 degrees or more. In one example, the first temperature is -10 degrees or less, -20 degrees or less, -30 degrees or less, -40 degrees or less, -50 degrees or less, or -60 degrees or less.
  • the substrate W may be controlled to the first temperature.
  • Controlling the temperature of the substrate W to the first temperature includes setting the temperature of the substrate support 11, the heat transfer fluid flowing through the flow path 1110a, and/or the heater temperature to the first temperature or to a temperature different from the first temperature.
  • Step ST12 First Etching
  • a first etching is performed.
  • the carbon-containing film OF of the substrate W is etched to form a recess RC.
  • a first processing gas is supplied from the gas supply unit 20 into the plasma processing space 10s.
  • the first processing gas includes a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas.
  • the first processing gas includes a halogenated phosphorus gas, and an oxygen- and sulfur-containing gas.
  • the oxygen-containing gas comprises at least one gas selected from the group consisting of O2 gas, CO gas, and CO2 gas.
  • the halogenated phosphorus gas may be a phosphorus fluoride gas containing fluorine as a halogen element, such as PF3 gas or PF5 gas.
  • the halogenated phosphorus gas may be a phosphorus chloride gas containing chlorine as a halogen element, such as PCl3 gas or PCl5 gas.
  • the halogenated phosphorus gas may be a gas containing bromine or iodine as a halogen element, such as PBr3 gas, PBr5 gas, or PI3 gas.
  • the halogenated phosphorus gas may be a gas containing two or more halogen elements, such as PClF2 gas, PCl2F gas, or PCl2F3 gas.
  • the halogenated phosphorus gas may be a phosphorus oxyfluoride gas or a phosphorus oxychloride gas.
  • the halogenated phosphorus gas may be POF3 gas, POCl3 gas, POF2Cl2 gas, POFCl2 gas, or POF2Cl gas.
  • the flow rate of the halogenated phosphorus gas is 0.1 volume % or more and 5 volume % or less of the total flow rate of the first process gas (excluding the inert gas if the first process gas contains an inert gas).
  • the sulfur-containing gas may be SF6 gas.
  • the oxygen and sulfur containing gas may be COS gas or SO2 gas.
  • the first process gas may further include an inert gas.
  • the inert gas may be a noble gas such as Ar gas, He gas, or Kr gas, or nitrogen gas.
  • a source RF signal is supplied to the antenna 14. This generates a high-frequency electric field in the plasma processing space 10s, generates plasma from the first processing gas, and etches the carbon-containing film OF.
  • a bias signal may be supplied to the lower electrode of the substrate support 11. In this case, a bias potential is generated between the plasma and the substrate W, and active species such as ions and radicals in the plasma are attracted to the substrate W, which can promote etching of the carbon-containing film OF.
  • the bias signal may be a bias RF signal supplied from the second RF generating unit 31b.
  • the bias signal may also be a bias DC signal supplied from the DC generating unit 32a.
  • the source RF signal and the bias signal may both be continuous waves or pulse waves, or one may be a continuous wave and the other a pulse wave.
  • the periods of the two pulse waves may or may not be synchronized.
  • the duty ratio of the source RF signal and/or bias signal pulse wave may be set appropriately, for example, 1 to 80%, or 5 to 50%.
  • the pulse wave may have a rectangular, trapezoidal, triangular, or combination thereof.
  • the polarity of the bias DC signal may be negative or positive, as long as the potential of the substrate W is set to provide a potential difference between the plasma and the substrate to attract ions.
  • step ST12 the supply and halt of at least one of the source RF signal and the bias signal may be alternately repeated.
  • the supply and halt of the bias signal may be alternately repeated while the source RF signal is continuously supplied.
  • the bias signal may be continuously supplied while the supply and halt of the source RF signal are alternately repeated.
  • the supply and halt of both the source RF signal and the bias signal may be alternately repeated.
  • the temperature of the substrate support 11 may be controlled to the first temperature set in step ST11. In one embodiment, instead of the temperature of the substrate support 11, the temperature of the substrate W may be controlled to the first temperature.
  • step ST12 the portion of the carbon-containing film OF that is not covered by the mask MK (the portion exposed at the opening OP) is etched to form a recess RC.
  • FIG. 6 is a diagram for explaining an example of a phenomenon occurring in step ST12.
  • FIG. 6 is a diagram showing a cross-sectional structure of the substrate W in the vicinity of the mask MK during step ST12.
  • the portion of the carbon-containing film OF exposed at the opening OP is etched in the depth direction (from top to bottom in FIG. 6) by active species (e.g., oxygen ions O + ) in the plasma to form a recess RC.
  • the recess RC is a space defined by the sidewall S2 and bottom BT of the carbon-containing film OF.
  • a first deposition film DP1 is formed on a side wall S1 of the mask MK during the execution of the process ST12.
  • the first deposition film DP1 can be formed, for example, by a mask material sputtered by ions (e.g., oxygen ions O + , etc.) in the plasma re-adhering to the side wall S1.
  • ions e.g., oxygen ions O + , etc.
  • the deposition film DP can include silicon.
  • the first deposition film DP1 can be combined with halogen active species (halogen ions X + and halogen radicals X * ) in the plasma dissociated from the halogenated phosphorus gas, and volatilized and removed, as shown in FIG. 6.
  • halogen active species halogen ions X + and halogen radicals X *
  • a second deposition film DP2 is formed on at least a portion of the sidewall S2 and bottom BT of the carbon-containing film OF during the execution of step ST12.
  • the second deposition film DP2 may be, for example, a non-volatile by-product (by-product) resulting from etching.
  • the second deposition film DP2 includes a phosphorus oxide compound or an organic phosphorus compound.
  • the second deposition film DP2 is formed bottom-up from the bottom BT during the execution of step ST12. That is, the second deposition film DP2 may be formed on the bottom BT and the sidewall S2 near the bottom BT, as shown diagrammatically in FIG. 6.
  • the second deposition film DP2 has a higher etching resistance to halogen active species in plasma than the carbon-containing film OF. That is, the second deposition film DP2 can function as a protective film against halogen active species in the plasma on the sidewall S2 and bottom BT on which the second deposition film DP2 is formed.
  • the first deposition film DP1 formed in the opening OP can be removed by halogen active species in the plasma. This can prevent the opening OP from being blocked as the etching progresses.
  • the second deposition film DP2 formed during the execution of step ST12 functions as a protective film, which can prevent the sidewall S2 on which the second deposition film DP2 is formed from being etched in the horizontal direction (left and right direction in FIG. 6).
  • Second Embodiment 7 is a flow chart according to a second embodiment of the method.
  • the method may include a step ST21 of providing a substrate, a step ST22 of performing a first etching, a step ST23 of performing a second etching, and a step ST24 of determining whether an etching stop condition is satisfied. That is, the method may repeat a cycle including the first etching (step ST22) and the second etching (step ST23) until it is determined in step ST24 that the stop condition is satisfied.
  • Step ST21 and Step ST22 Steps ST21 and ST22 may be performed in the same manner as steps ST11 and ST12 of the first embodiment described above, respectively, and therefore description thereof will be omitted.
  • Step ST23 Second Etching
  • a second etching is performed.
  • the recess RC in the carbon-containing film OF of the substrate W is further etched.
  • a second processing gas is supplied from the gas supply unit 20 into the plasma processing space 10s.
  • the second processing gas is a gas different from the first processing gas.
  • the second processing gas contains an oxygen-containing gas and a sulfur-containing gas, or contains oxygen and a sulfur-containing gas.
  • the second processing gas does not contain halogenated phosphorus gas, or contains halogenated phosphorus gas at a flow rate lower than the flow rate of the halogenated phosphorus gas contained in the first processing gas.
  • the oxygen-containing gas includes at least one gas selected from the group consisting of O2 gas, CO gas, and CO2 gas.
  • the oxygen-containing gas included in the second process gas may be the same type of gas as the first process gas, or may be different.
  • the halogenated phosphorus gas may be a phosphorus fluoride gas containing fluorine as a halogen element, such as PF3 gas or PF5 gas.
  • the halogenated phosphorus gas may be a phosphorus chloride gas containing chlorine as a halogen element, such as PCl3 gas or PCl5 gas.
  • the halogenated phosphorus gas may be a gas containing bromine or iodine as a halogen element, such as PBr3 gas, PBr5 gas, or PI3 gas.
  • the halogenated phosphorus gas may be a gas containing two or more halogen elements, such as PClF2 gas, PCl2F gas, or PCl2F3 gas.
  • the halogenated phosphorus gas may be a phosphorus oxyfluoride gas or a phosphorus oxychloride gas.
  • the halogenated phosphorus gas may be POF3 gas, POCl3 gas, POF2Cl2 gas, POFCl2 gas, or POF2Cl gas.
  • the second process gas contains a halogenated phosphorus gas
  • the halogenated phosphorus gas may be the same type of gas as the first process gas, or may be different.
  • the sulfur-containing gas may be SF6 gas.
  • the oxygen and sulfur-containing gas may be COS gas or SO2 gas.
  • the oxygen and sulfur-containing gas contained in the second process gas may be the same type of gas as the first process gas, or may be different.
  • the second process gas may further include an inert gas.
  • the inert gas may be a noble gas such as Ar gas, He gas, or Kr gas, or nitrogen gas.
  • a source RF signal is supplied to the antenna 14. This generates a high-frequency electric field in the plasma processing space 10s, generates plasma from the second processing gas, and etches the carbon-containing film OF.
  • a bias signal may be supplied to the lower electrode of the substrate support 11. In this case, a bias potential is generated between the plasma and the substrate W, and active species such as ions and radicals in the plasma are attracted to the substrate W, which can promote etching of the carbon-containing film OF.
  • the configuration and supply form of the source signal and bias signal may be the same as or different from those in step ST22 (step ST12).
  • the temperature of the substrate support 11 may be controlled to the same temperature as in step ST22 (i.e., the first temperature). In one embodiment, the temperature of the substrate W may be controlled instead of the temperature of the substrate support 11.
  • step ST24 it is determined whether a stop condition is satisfied.
  • the stop condition may be, for example, whether the number of repetitions of a cycle consisting of steps ST22 and ST23 has reached a given number.
  • the stopping condition may be, for example, whether the etching time has reached a given time.
  • the stopping condition may be, for example, whether the depth of the recess RC formed by etching has reached a given depth. If it is determined in step ST24 that the stop condition is not satisfied, the cycle including steps ST22 and ST23 is repeated. If it is determined in step ST24 that the stop condition is satisfied, the etching is stopped and the method is Exit.
  • Figure 8 is a diagram illustrating an example of a phenomenon that occurs during the repeated cycle of steps ST22 and ST23.
  • step ST22 first etching of cycle N (N is an integer of 1 or more)
  • the same phenomenon as that described in Fig. 6 may occur. That is, in this step, the recess RC is etched in the depth direction by active species in the plasma (e.g., oxygen ions O + ).
  • the first deposition film DP1 formed on the sidewall S1 of the mask MK may be removed by active halogen species in the plasma (halogen ions X + and halogen radicals X * ).
  • a second deposition film DP2 functioning as a protective film against active halogen species in the plasma may be formed on at least a part of the sidewall S2 and bottom BT of the carbon-containing film OF.
  • step ST23 second etching of cycle N
  • the recess RC is further etched in the depth direction by active species in the plasma (e.g., oxygen ions O + ).
  • the second process gas does not contain halogenated phosphorus gas, or contains halogenated phosphorus gas at a flow rate lower than that of the first process gas. Therefore, in step ST23, the amount of halogen active species in the plasma is reduced compared to step ST22, and the amount of phosphorus active species is also reduced.
  • the formation of the first deposition film DP1 is dominant on the sidewall S1 of the mask MK.
  • the second deposition film DP2 is reduced or removed on the sidewall S2 and bottom BT of the carbon-containing film OF.
  • step ST22 of cycle N+1 the recess RC is further etched in the depth direction by active species in the plasma (e.g., oxygen ions O + ). Then, similarly to step ST22 of cycle N, the first deposition film DP1 formed on the sidewall S1 of the mask MK may be removed. Also, the second deposition film DP2 may be formed again on at least a part of the sidewall S2 and bottom BT of the carbon-containing film OF.
  • active species in the plasma e.g., oxygen ions O + .
  • step ST23 of cycle N+1 the recess RC is further etched in the depth direction by active species in the plasma (e.g., oxygen ions O + ). Then, similarly to step ST23 of cycle N, the formation of the first deposition film DP1 predominates on the sidewall S1 of the mask MK. Also, the second deposition film DP2 is reduced or removed on the sidewall S2 and bottom BT of the carbon-containing film OF.
  • active species in the plasma e.g., oxygen ions O +
  • the portions of the sidewall S2 of the carbon-containing film OF that are not covered by the second deposition film DP2 are etched in the horizontal direction, which may cause the opening width (CD) of the recess RC to increase or cause bowing. It may also cause the upper part of the mask MK to be etched excessively, which may cause the selectivity to deteriorate.
  • a cycle including a first etching (step ST22) and a second etching (step ST23) is alternately repeated. That is, step ST22 including a phosphorus halide as a processing gas and step ST23 including no phosphorus halide gas or including it at a flow rate lower than that of step ST22 are repeated.
  • step ST22 including a phosphorus halide as a processing gas and step ST23 including no phosphorus halide gas or including it at a flow rate lower than that of step ST22 are repeated.
  • the etching times in steps ST22 and ST23 may be set appropriately.
  • the etching times in steps ST22 and ST23 may be set according to the flow rate of the halogenated phosphorus gas contained in the first processing gas and/or the second processing gas, the type of mask MK or carbon-containing film OF, the depth of the recess RC, the aspect ratio, etc.
  • the ratio of the etching time in step ST23 to the etching time in step ST22 may be 0.8 or more and 1.2 or less.
  • the ratio may be 0.9 or more and 1.1 or less.
  • the ratio may be set according to the number of cycles.
  • the ratio when the number of cycles exceeds a given number, or for each given number of cycles, the ratio may be increased. As a result, the etching time in step ST23 may be longer than that in step ST22 as the depth of the recess RC formed in the carbon-containing film OF increases.
  • the ratio may be set according to the depth or aspect ratio of the recess RC, rather than the number of cycles. For example, the ratio may be increased when the depth or aspect ratio of the recess RC exceeds a given value, or with each increment of a given value.
  • the temperature of the substrate support 11 may be controlled to a second temperature different from that in step ST22.
  • the second temperature may be higher than the first temperature.
  • the volatilization (removal) of the second deposition film DP2 may be promoted.
  • the first temperature and/or the second temperature may be set according to the number of cycles. For example, when the number of cycles exceeds a given number, or for each given number of cycles, the first temperature and/or the second temperature may be increased. In this way, the temperature of the substrate support 11 may be increased as the depth of the recess RC formed in the carbon-containing film OF increases.
  • the first temperature and/or the second temperature may be set according to the depth or aspect ratio of the recess RC, rather than the number of cycles. For example, when the depth or aspect ratio of the recess RC exceeds a given value, or for each increase of a given value, the first temperature and/or the second temperature may be increased.
  • FIGS. 9 and 10 are flow charts showing a modified example of the second embodiment.
  • FIG. 7 shows an example in which the first etching (step ST22) is performed and then the second etching (step ST23) is performed in one cycle.
  • the first etching (step ST33) may be performed after the second etching (step ST32) in one cycle.
  • it may be determined whether or not the stop condition is satisfied in the middle of one cycle. That is, it may be determined (step ST43) whether or not the stop condition is satisfied even after the first etching (step ST42) is performed. Then, if the stop condition is satisfied, the etching may be terminated without proceeding to the second etching (step ST44).
  • Example 1 a substrate having a structure similar to that of the substrate W shown in Fig. 5 was etched using the plasma processing apparatus 1 shown in Fig. 2 in accordance with the flow chart described in Fig. 4.
  • the mask MK was a silicon oxynitride film, and the carbon-containing film OF was an amorphous carbon film.
  • the opening OP of the mask MK had a hole shape and the opening diameter was 80 nm.
  • the first process gas contained O2 gas, PF3 gas, and COS gas.
  • the flow rate of the PF3 gas was 1.3 volume % of the total flow rate of the first process gas.
  • a bias RF signal was supplied in addition to the source RF signal.
  • the pressure in the chamber 10 was controlled to 30 mTorr, and the temperature of the substrate support 11 was controlled to ⁇ 60° C. The process ST12 was performed for 240 seconds.
  • Reference Example 1 a substrate having the same configuration as in Example 1 was etched using the plasma processing apparatus 1. In Reference Example 1, etching was performed under the same conditions as in Example 1, except that O2 gas and COS gas were used as the processing gas.
  • FIG. 11 shows the results of etching in Example 1 and Reference Example 1.
  • (a1) and (b1) show the cross-sectional shapes of the mask MK and the upper part of the recess RC after etching in Example 1 and Reference Example 1, respectively.
  • (a2) and (b2) are plan views of the mask MK after etching in Example 1 and Reference Example 1, respectively (views of (a1) and (b1) from above).
  • Example 1 As shown in (a1) and (a2) of FIG. 11, in Example 1, blocking of the opening OP of the mask MK was suppressed.
  • the minimum opening diameter of the mask MK in Example 1 was 63.0 nm.
  • the minimum opening diameter of the mask MK in Reference Example 1 was 42.8 nm.
  • Example 2 In Example 2, a substrate having the same structure as that of Example 1 was etched using the plasma processing apparatus 1 shown in FIG. 2 and following the flow chart explained with reference to FIG.
  • step ST22 a process gas having the same composition as in Example 1 was used as the first process gas.
  • a bias RF signal was supplied in addition to the source RF signal.
  • the pressure in the chamber 10 was controlled to 30 mTorr, and the temperature of the substrate support 11 was controlled to ⁇ 60° C.
  • the second process gas contained O 2 gas and COS gas. The other conditions were the same as those in step ST22.
  • etching in step ST22 was performed for 10 seconds, and then etching in step ST23 was performed for 10 seconds.
  • the cycle was repeated 12 times, and etching was performed for a total of 240 seconds.
  • FIG. 12 shows the results of etching in Example 2 and Reference Example 1.
  • (a1) shows the cross-sectional shape of the mask MK and the upper part of the recess RC after etching in Example 2.
  • (a2) is a plan view of the mask MK after etching in Example 2 (a view of (a1) from above). Note that (a2) and (b2) in FIG. 12 are reprints of the drawings of Reference Example 1 shown in (a2) and (b2) in FIG. 11 for comparison with Example 2.
  • Example 2 As shown in FIG. 12, in Example 2, as in Example 1, the opening blockage of the mask MK was suppressed compared to Reference Example 1. In Example 2, the minimum opening diameter of the mask MK was 62.6 nm.
  • FIG. 13 shows the results of etching in Example 2 and Reference Example 1.
  • the vertical axis shows the depth D [ ⁇ m] of the opening OP in the mask film MK and the recess RC formed in the carbon-containing film OF.
  • the area around 0 ⁇ m on the vertical axis is the boundary between the mask MK and the carbon-containing film OF.
  • the horizontal axis shows the opening diameter CD [nm] of the opening OP in the mask film MK and the recess RC formed in the carbon-containing film OF.
  • Example 2 the expansion of the opening diameter of the recess RC was suppressed throughout the entire depth direction compared to Reference Example 1. Furthermore, the maximum diameter of the recess RC in Example 2 was 67.5 nm, while the maximum diameter of the recess RC in Reference Example 1 was 77.4 nm. That is, bowing was suppressed in Example 2 compared to Reference Example 1. Furthermore, the etching selectivity (ratio of the etching rate of the carbon-containing film OF to the etching rate of the mask MK) was 125.4 in Example 2, while it was 75.1 in Reference Example 1. That is, the selectivity was also improved in Example 2 compared to Reference Example 1.
  • (Appendix 1) An etching method comprising the steps of: (a) providing a substrate on a substrate support in a chamber, the substrate having a carbon-containing film and a mask on the carbon-containing film; (b) etching the carbon-containing film using plasma generated from a first process gas, the first process gas containing a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas, or a halogenated phosphorus gas, oxygen, and a sulfur-containing gas.
  • halogenated phosphorus gas includes at least one gas selected from the group consisting of a phosphorus fluoride gas, a phosphorus chloride gas, a phosphorus oxyfluoride gas, and a phosphorus oxychloride gas.
  • halogenated phosphorus gas includes at least one gas selected from the group consisting of PF3 gas, PF5 gas, and PCl3 gas.
  • a plasma processing apparatus having a chamber and a control unit,
  • the control unit is (a) providing a substrate having a carbon-containing film and a mask on the carbon-containing film on a substrate support in a chamber; (b) controlling the etching of the carbon-containing film using plasma generated from a first process gas, the first process gas including a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas, or a halogenated phosphorus gas, oxygen, and a sulfur-containing gas.
  • control unit 20 The plasma processing apparatus of claim 19, wherein the control unit further performs control of (c) etching the carbon-containing film using plasma generated from a second processing gas different from the first processing gas, the second processing gas including an oxygen-containing gas and a sulfur-containing gas, or including oxygen and a sulfur-containing gas.
  • a device manufacturing method carried out in a plasma processing apparatus having a chamber and a control unit comprising: (a) providing a substrate on a substrate support in a chamber, the substrate having a carbon-containing film and a mask on the carbon-containing film; (b) etching the carbon-containing film using plasma generated from a first process gas, the first process gas containing a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas, or containing a halogenated phosphorus gas, oxygen, and a sulfur-containing gas.
  • a computer of a plasma processing apparatus having a chamber and a control unit, (a) providing a substrate having a carbon-containing film and a mask on the carbon-containing film on a substrate support in a chamber; (b) a program for executing control for etching the carbon-containing film using plasma generated from a first process gas, the first process gas including a halogenated phosphorus gas, an oxygen-containing gas, and a sulfur-containing gas, or a halogenated phosphorus gas, oxygen, and a sulfur-containing gas.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/JP2024/000496 2023-02-13 2024-01-11 エッチング方法及びプラズマ処理装置 Ceased WO2024171669A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN202480010282.5A CN120642031A (zh) 2023-02-13 2024-01-11 蚀刻方法和等离子体处理装置
JP2025500722A JP7774375B2 (ja) 2023-02-13 2024-01-11 エッチング方法及びプラズマ処理装置
KR1020257029718A KR20250150572A (ko) 2023-02-13 2024-01-11 에칭 방법 및 플라즈마 처리 장치
US19/291,186 US20250357136A1 (en) 2023-02-13 2025-08-05 Etching method and plasma processing apparatus
JP2025188436A JP2026009407A (ja) 2023-02-13 2025-11-07 エッチング方法及びプラズマ処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-020225 2023-02-13
JP2023020225 2023-02-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US19/291,186 Continuation US20250357136A1 (en) 2023-02-13 2025-08-05 Etching method and plasma processing apparatus

Publications (1)

Publication Number Publication Date
WO2024171669A1 true WO2024171669A1 (ja) 2024-08-22

Family

ID=92421503

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2024/000496 Ceased WO2024171669A1 (ja) 2023-02-13 2024-01-11 エッチング方法及びプラズマ処理装置

Country Status (6)

Country Link
US (1) US20250357136A1 (https=)
JP (2) JP7774375B2 (https=)
KR (1) KR20250150572A (https=)
CN (1) CN120642031A (https=)
TW (1) TW202503886A (https=)
WO (1) WO2024171669A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190051526A1 (en) * 2017-08-10 2019-02-14 Samsung Electronics Co., Ltd. Method of manufacturing integrated circuit device
JP2021077865A (ja) * 2019-11-08 2021-05-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2021093523A (ja) * 2019-12-10 2021-06-17 東京エレクトロン株式会社 基板上のパターン形状を制御する方法及び装置
WO2022230118A1 (ja) * 2021-04-28 2022-11-03 東京エレクトロン株式会社 エッチング方法
WO2022234640A1 (ja) * 2021-05-07 2022-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP2018200925A (ja) 2017-05-25 2018-12-20 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190051526A1 (en) * 2017-08-10 2019-02-14 Samsung Electronics Co., Ltd. Method of manufacturing integrated circuit device
JP2021077865A (ja) * 2019-11-08 2021-05-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2021093523A (ja) * 2019-12-10 2021-06-17 東京エレクトロン株式会社 基板上のパターン形状を制御する方法及び装置
WO2022230118A1 (ja) * 2021-04-28 2022-11-03 東京エレクトロン株式会社 エッチング方法
WO2022234640A1 (ja) * 2021-05-07 2022-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
JP2026009407A (ja) 2026-01-19
KR20250150572A (ko) 2025-10-20
CN120642031A (zh) 2025-09-12
US20250357136A1 (en) 2025-11-20
JP7774375B2 (ja) 2025-11-21
TW202503886A (zh) 2025-01-16
JPWO2024171669A1 (https=) 2024-08-22

Similar Documents

Publication Publication Date Title
JP7348672B2 (ja) プラズマ処理方法及びプラズマ処理システム
KR20230057953A (ko) 플라즈마 처리 방법 및 플라즈마 처리 시스템
JP2024006972A (ja) プラズマ処理方法及びプラズマ処理システム
JP7774375B2 (ja) エッチング方法及びプラズマ処理装置
TW202437384A (zh) 蝕刻方法及電漿處理裝置
JP7675033B2 (ja) エッチング方法及びプラズマ処理装置
JP7641923B2 (ja) エッチング方法及びプラズマ処理装置
US20240213032A1 (en) Etching method and plasma processing apparatus
JP7751768B1 (ja) エッチング方法及びプラズマ処理装置
US20260074166A1 (en) Etching method, method for manufacturing dram capacitor, and plasma processing apparatus
WO2025004625A1 (ja) エッチング方法及びプラズマ処理装置
US20260011565A1 (en) Etching method and plasma processing apparatus
US20250372349A1 (en) Plasma processing apparatus, power supply system, and etching method
WO2025150294A1 (ja) 基板処理方法及び基板処理装置
TW202503888A (zh) 蝕刻方法及電漿處理裝置
WO2025142198A1 (ja) エッチング方法及び基板処理装置
JP2025071859A (ja) エッチング方法及びプラズマ処理システム
WO2024171666A1 (ja) エッチング方法及びプラズマ処理装置
WO2025177876A1 (ja) 基板処理方法及び基板処理システム
JP2025026361A (ja) エッチング方法及びプラズマ処理装置
TW202439445A (zh) 電漿處理方法及電漿處理裝置
JP2025089743A (ja) エッチング方法
TW202603798A (zh) 電漿處理方法
KR20250080781A (ko) 기판 처리 방법 및 기판 처리 시스템
JP2024150167A (ja) プラズマ処理方法及びプラズマ処理装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24756521

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2025500722

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2025500722

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 202480010282.5

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 1020257029718

Country of ref document: KR

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A15-NAP-PA0105 (AS PROVIDED BY THE NATIONAL OFFICE)

WWP Wipo information: published in national office

Ref document number: 202480010282.5

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 11202505220P

Country of ref document: SG

WWP Wipo information: published in national office

Ref document number: 11202505220P

Country of ref document: SG

WWP Wipo information: published in national office

Ref document number: 1020257029718

Country of ref document: KR

122 Ep: pct application non-entry in european phase

Ref document number: 24756521

Country of ref document: EP

Kind code of ref document: A1