KR20250134066A - Euv 투과막, 펠리클 및 노광 방법 - Google Patents

Euv 투과막, 펠리클 및 노광 방법

Info

Publication number
KR20250134066A
KR20250134066A KR1020257008651A KR20257008651A KR20250134066A KR 20250134066 A KR20250134066 A KR 20250134066A KR 1020257008651 A KR1020257008651 A KR 1020257008651A KR 20257008651 A KR20257008651 A KR 20257008651A KR 20250134066 A KR20250134066 A KR 20250134066A
Authority
KR
South Korea
Prior art keywords
layer
euv
nitride
film
beryllium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257008651A
Other languages
English (en)
Korean (ko)
Inventor
도시카츠 가시와야
Original Assignee
엔지케이 인슐레이터 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔지케이 인슐레이터 엘티디 filed Critical 엔지케이 인슐레이터 엘티디
Publication of KR20250134066A publication Critical patent/KR20250134066A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laminated Bodies (AREA)
KR1020257008651A 2024-02-29 2024-02-29 Euv 투과막, 펠리클 및 노광 방법 Pending KR20250134066A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/007655 WO2025182055A1 (ja) 2024-02-29 2024-02-29 Ｅｕｖ透過膜、ペリクル、及び露光方法

Publications (1)

Publication Number Publication Date
KR20250134066A true KR20250134066A (ko) 2025-09-09

Family

ID=96881131

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257008651A Pending KR20250134066A (ko) 2024-02-29 2024-02-29 Euv 투과막, 펠리클 및 노광 방법

Country Status (6)

Country Link
US (1) US20250278031A1 (https=)
EP (1) EP4636478A1 (https=)
JP (1) JPWO2025182055A1 (https=)
KR (1) KR20250134066A (https=)
TW (1) TW202601271A (https=)
WO (1) WO2025182055A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020098227A (ja) 2018-12-17 2020-06-25 信越化学工業株式会社 フォトリソグラフィ用ペリクル膜及びこれを備えたペリクル
JP6858817B2 (ja) 2014-07-04 2021-04-14 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置内で用いられる膜及びそのような膜を含むリソグラフィ装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5782954A (en) * 1980-11-11 1982-05-24 Nec Corp X-ray window
JP2002110505A (ja) * 2000-09-27 2002-04-12 Mitsubishi Electric Corp 露光方法、露光装置、ｘ線マスク、レジスト、半導体装置および微細構造体
NL2011237A (en) * 2012-08-03 2014-02-04 Asml Netherlands Bv Lithographic apparatus and method.
KR102366806B1 (ko) * 2015-05-13 2022-02-23 삼성전자주식회사 열 축적을 방지하는 펠리클 및 이를 포함하는 극자외선 리소그래피 장치
KR101813185B1 (ko) * 2016-06-30 2018-01-30 삼성전자주식회사 포토마스크용 펠리클 및 이를 포함하는 노광 장치
JP6518801B2 (ja) * 2017-03-10 2019-05-22 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用ペリクル及びその製造方法
KR102675777B1 (ko) * 2017-07-31 2024-06-18 삼성전자주식회사 포토마스크용 펠리클과 이를 포함하는 레티클 및 포토마스크용 펠리클의 제조방법
JP6787851B2 (ja) * 2017-08-08 2020-11-18 エア・ウォーター株式会社 ペリクルおよびペリクルの製造方法
US11143951B2 (en) * 2018-04-30 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Pellicle for an EUV lithography mask and a method of manufacturing thereof
JP7606504B2 (ja) * 2019-07-30 2024-12-25 エーエスエムエル ネザーランズ ビー．ブイ． ペリクル膜
KR102662986B1 (ko) * 2021-07-06 2024-05-07 주식회사 에프에스티 극자외선 리소그라피용 펠리클의 제조방법
EP4194948A4 (en) * 2021-10-20 2024-05-01 NGK Insulators, Ltd. EUV TRANSMITTANT FILM
WO2023112330A1 (ja) * 2021-12-17 2023-06-22 日本碍子株式会社 ペリクルの製造に用いられるためのＳｉメンブレン構造体、及びペリクルの製造方法
KR20240111817A (ko) * 2022-03-18 2024-07-17 엔지케이 인슐레이터 엘티디 Euv 투과막의 제조 방법 및 펠리클
JP7372501B1 (ja) * 2022-09-15 2023-10-31 日本碍子株式会社 Ｅｕｖ透過膜

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6858817B2 (ja) 2014-07-04 2021-04-14 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置内で用いられる膜及びそのような膜を含むリソグラフィ装置
JP2020098227A (ja) 2018-12-17 2020-06-25 信越化学工業株式会社 フォトリソグラフィ用ペリクル膜及びこれを備えたペリクル

Also Published As

Publication number Publication date
TW202601271A (zh) 2026-01-01
EP4636478A1 (en) 2025-10-22
WO2025182055A1 (ja) 2025-09-04
JPWO2025182055A1 (https=) 2025-09-04
US20250278031A1 (en) 2025-09-04

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