JPWO2025182055A1 - - Google Patents
Info
- Publication number
- JPWO2025182055A1 JPWO2025182055A1 JP2025514823A JP2025514823A JPWO2025182055A1 JP WO2025182055 A1 JPWO2025182055 A1 JP WO2025182055A1 JP 2025514823 A JP2025514823 A JP 2025514823A JP 2025514823 A JP2025514823 A JP 2025514823A JP WO2025182055 A1 JPWO2025182055 A1 JP WO2025182055A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2024/007655 WO2025182055A1 (ja) | 2024-02-29 | 2024-02-29 | Ｅｕｖ透過膜、ペリクル、及び露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2025182055A1 true JPWO2025182055A1 (https=) | 2025-09-04 |
| JPWO2025182055A5 JPWO2025182055A5 (https=) | 2026-02-04 |
Family
ID=96881131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025514823A Pending JPWO2025182055A1 (https=) | 2024-02-29 | 2024-02-29 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250278031A1 (https=) |
| EP (1) | EP4636478A1 (https=) |
| JP (1) | JPWO2025182055A1 (https=) |
| KR (1) | KR20250134066A (https=) |
| TW (1) | TW202601271A (https=) |
| WO (1) | WO2025182055A1 (https=) |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5782954A (en) * | 1980-11-11 | 1982-05-24 | Nec Corp | X-ray window |
| JP2002110505A (ja) * | 2000-09-27 | 2002-04-12 | Mitsubishi Electric Corp | 露光方法、露光装置、ｘ線マスク、レジスト、半導体装置および微細構造体 |
| JP2015523611A (ja) * | 2012-08-03 | 2015-08-13 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置および方法 |
| US20160334698A1 (en) * | 2015-05-13 | 2016-11-17 | Hwanchul JEON | Pellicle for preventing thermal accumulation and extreme ultra-violet lithography apparatus having the same |
| JP2017522590A (ja) * | 2014-07-04 | 2017-08-10 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置内で用いられる膜及びそのような膜を含むリソグラフィ装置 |
| US20180004082A1 (en) * | 2016-06-30 | 2018-01-04 | Samsung Electronics Co., Ltd. | Pellicle for photomask and exposure apparatus including the pellicle |
| JP2018151622A (ja) * | 2017-03-10 | 2018-09-27 | エスアンドエス テック カンパニー リミテッド | 極紫外線リソグラフィ用ペリクル及びその製造方法 |
| JP2019028462A (ja) * | 2017-07-31 | 2019-02-21 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | フォトマスク用ペリクル、及びそれを含むレチクル、並びにフォトマスク用ペリクルの製造方法 |
| JP2019032444A (ja) * | 2017-08-08 | 2019-02-28 | エア・ウォーター株式会社 | ペリクルおよびペリクルの製造方法 |
| US20190332005A1 (en) * | 2018-04-30 | 2019-10-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle for an euv lithography mask and a method of manufacturing thereof |
| JP2022543545A (ja) * | 2019-07-30 | 2022-10-13 | エーエスエムエル ネザーランズ ビー．ブイ． | ペリクル膜 |
| KR20230007668A (ko) * | 2021-07-06 | 2023-01-13 | 주식회사 에프에스티 | 극자외선 리소그라피용 펠리클의 제조방법 |
| WO2023067739A1 (ja) * | 2021-10-20 | 2023-04-27 | 日本碍子株式会社 | Ｅｕｖ透過膜 |
| WO2023112330A1 (ja) * | 2021-12-17 | 2023-06-22 | 日本碍子株式会社 | ペリクルの製造に用いられるためのＳｉメンブレン構造体、及びペリクルの製造方法 |
| WO2023175990A1 (ja) * | 2022-03-18 | 2023-09-21 | 日本碍子株式会社 | Ｅｕｖ透過膜の製造方法及びペリクル |
| JP7372501B1 (ja) * | 2022-09-15 | 2023-10-31 | 日本碍子株式会社 | Ｅｕｖ透過膜 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020098227A (ja) | 2018-12-17 | 2020-06-25 | 信越化学工業株式会社 | フォトリソグラフィ用ペリクル膜及びこれを備えたペリクル |
-
2024
- 2024-02-29 EP EP24861349.9A patent/EP4636478A1/en active Pending
- 2024-02-29 WO PCT/JP2024/007655 patent/WO2025182055A1/ja active Pending
- 2024-02-29 KR KR1020257008651A patent/KR20250134066A/ko active Pending
- 2024-02-29 JP JP2025514823A patent/JPWO2025182055A1/ja active Pending
-
2025
- 2025-01-03 TW TW114100250A patent/TW202601271A/zh unknown
- 2025-03-18 US US19/082,502 patent/US20250278031A1/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5782954A (en) * | 1980-11-11 | 1982-05-24 | Nec Corp | X-ray window |
| JP2002110505A (ja) * | 2000-09-27 | 2002-04-12 | Mitsubishi Electric Corp | 露光方法、露光装置、ｘ線マスク、レジスト、半導体装置および微細構造体 |
| JP2015523611A (ja) * | 2012-08-03 | 2015-08-13 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置および方法 |
| JP2017522590A (ja) * | 2014-07-04 | 2017-08-10 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置内で用いられる膜及びそのような膜を含むリソグラフィ装置 |
| US20160334698A1 (en) * | 2015-05-13 | 2016-11-17 | Hwanchul JEON | Pellicle for preventing thermal accumulation and extreme ultra-violet lithography apparatus having the same |
| US20180004082A1 (en) * | 2016-06-30 | 2018-01-04 | Samsung Electronics Co., Ltd. | Pellicle for photomask and exposure apparatus including the pellicle |
| JP2018151622A (ja) * | 2017-03-10 | 2018-09-27 | エスアンドエス テック カンパニー リミテッド | 極紫外線リソグラフィ用ペリクル及びその製造方法 |
| JP2019028462A (ja) * | 2017-07-31 | 2019-02-21 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | フォトマスク用ペリクル、及びそれを含むレチクル、並びにフォトマスク用ペリクルの製造方法 |
| JP2019032444A (ja) * | 2017-08-08 | 2019-02-28 | エア・ウォーター株式会社 | ペリクルおよびペリクルの製造方法 |
| US20190332005A1 (en) * | 2018-04-30 | 2019-10-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle for an euv lithography mask and a method of manufacturing thereof |
| JP2022543545A (ja) * | 2019-07-30 | 2022-10-13 | エーエスエムエル ネザーランズ ビー．ブイ． | ペリクル膜 |
| KR20230007668A (ko) * | 2021-07-06 | 2023-01-13 | 주식회사 에프에스티 | 극자외선 리소그라피용 펠리클의 제조방법 |
| WO2023067739A1 (ja) * | 2021-10-20 | 2023-04-27 | 日本碍子株式会社 | Ｅｕｖ透過膜 |
| WO2023112330A1 (ja) * | 2021-12-17 | 2023-06-22 | 日本碍子株式会社 | ペリクルの製造に用いられるためのＳｉメンブレン構造体、及びペリクルの製造方法 |
| WO2023175990A1 (ja) * | 2022-03-18 | 2023-09-21 | 日本碍子株式会社 | Ｅｕｖ透過膜の製造方法及びペリクル |
| JP7372501B1 (ja) * | 2022-09-15 | 2023-10-31 | 日本碍子株式会社 | Ｅｕｖ透過膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202601271A (zh) | 2026-01-01 |
| EP4636478A1 (en) | 2025-10-22 |
| WO2025182055A1 (ja) | 2025-09-04 |
| US20250278031A1 (en) | 2025-09-04 |
| KR20250134066A (ko) | 2025-09-09 |
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| Date | Code | Title | Description |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250311 |
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| A621 | Written request for application examination |
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