KR20250117810A - 박막 트랜지스터 및 전자 기기 - Google Patents

박막 트랜지스터 및 전자 기기

Info

Publication number
KR20250117810A
KR20250117810A KR1020257022126A KR20257022126A KR20250117810A KR 20250117810 A KR20250117810 A KR 20250117810A KR 1020257022126 A KR1020257022126 A KR 1020257022126A KR 20257022126 A KR20257022126 A KR 20257022126A KR 20250117810 A KR20250117810 A KR 20250117810A
Authority
KR
South Korea
Prior art keywords
oxide semiconductor
semiconductor layer
thin film
film transistor
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257022126A
Other languages
English (en)
Korean (ko)
Inventor
하지메 와따까베
마사시 즈부꾸
도시나리 사사끼
다까야 다마루
마리나 모찌즈끼
료 오노데라
마사히로 와따베
에미 가와시마
유끼 즈루마
다이찌 사사끼
Original Assignee
가부시키가이샤 재팬 디스프레이
이데미쓰 고산 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 재팬 디스프레이, 이데미쓰 고산 가부시키가이샤 filed Critical 가부시키가이샤 재팬 디스프레이
Publication of KR20250117810A publication Critical patent/KR20250117810A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO

Landscapes

  • Thin Film Transistor (AREA)
KR1020257022126A 2023-03-17 2024-03-12 박막 트랜지스터 및 전자 기기 Pending KR20250117810A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023043065 2023-03-17
JPJP-P-2023-043065 2023-03-17
PCT/JP2024/009575 WO2024195629A1 (ja) 2023-03-17 2024-03-12 薄膜トランジスタおよび電子機器

Publications (1)

Publication Number Publication Date
KR20250117810A true KR20250117810A (ko) 2025-08-05

Family

ID=92842100

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257022126A Pending KR20250117810A (ko) 2023-03-17 2024-03-12 박막 트랜지스터 및 전자 기기

Country Status (7)

Country Link
US (1) US20260006849A1 (https=)
JP (1) JPWO2024195629A1 (https=)
KR (1) KR20250117810A (https=)
CN (1) CN120570087A (https=)
DE (1) DE112024000552T5 (https=)
TW (1) TWI899892B (https=)
WO (1) WO2024195629A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099601A (ja) 2012-10-19 2014-05-29 Semiconductor Energy Lab Co Ltd 酸化物半導体膜を含む多層膜及び半導体装置の作製方法
JP2016184771A (ja) 2012-08-03 2016-10-20 株式会社半導体エネルギー研究所 半導体装置
JP2018006730A (ja) 2016-02-12 2018-01-11 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置
JP2021108405A (ja) 2010-09-13 2021-07-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2021141338A (ja) 2012-09-14 2021-09-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2021153196A (ja) 2013-09-23 2021-09-30 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273016A (ja) * 2002-01-11 2003-09-26 Sharp Corp 半導体膜およびその形成方法、並びに、その半導体膜を用いた半導体装置、ディスプレイ装置。
JP5189674B2 (ja) * 2010-12-28 2013-04-24 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
US9368582B2 (en) * 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
WO2015125042A1 (en) * 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
US20160268127A1 (en) * 2015-03-13 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Oxide and Manufacturing Method Thereof
WO2022202795A1 (ja) * 2021-03-26 2022-09-29 三菱マテリアル株式会社 金属板材、積層体、および、絶縁回路基板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021108405A (ja) 2010-09-13 2021-07-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016184771A (ja) 2012-08-03 2016-10-20 株式会社半導体エネルギー研究所 半導体装置
JP2021141338A (ja) 2012-09-14 2021-09-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2014099601A (ja) 2012-10-19 2014-05-29 Semiconductor Energy Lab Co Ltd 酸化物半導体膜を含む多層膜及び半導体装置の作製方法
JP2021153196A (ja) 2013-09-23 2021-09-30 株式会社半導体エネルギー研究所 半導体装置
JP2018006730A (ja) 2016-02-12 2018-01-11 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置

Also Published As

Publication number Publication date
WO2024195629A1 (ja) 2024-09-26
CN120570087A (zh) 2025-08-29
TW202439617A (zh) 2024-10-01
US20260006849A1 (en) 2026-01-01
TWI899892B (zh) 2025-10-01
DE112024000552T5 (de) 2025-12-11
JPWO2024195629A1 (https=) 2024-09-26

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