JPWO2024195629A1 - - Google Patents
Info
- Publication number
- JPWO2024195629A1 JPWO2024195629A1 JP2025508339A JP2025508339A JPWO2024195629A1 JP WO2024195629 A1 JPWO2024195629 A1 JP WO2024195629A1 JP 2025508339 A JP2025508339 A JP 2025508339A JP 2025508339 A JP2025508339 A JP 2025508339A JP WO2024195629 A1 JPWO2024195629 A1 JP WO2024195629A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023043065 | 2023-03-17 | ||
| PCT/JP2024/009575 WO2024195629A1 (ja) | 2023-03-17 | 2024-03-12 | 薄膜トランジスタおよび電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024195629A1 true JPWO2024195629A1 (https=) | 2024-09-26 |
Family
ID=92842100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025508339A Pending JPWO2024195629A1 (https=) | 2023-03-17 | 2024-03-12 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20260006849A1 (https=) |
| JP (1) | JPWO2024195629A1 (https=) |
| KR (1) | KR20250117810A (https=) |
| CN (1) | CN120570087A (https=) |
| DE (1) | DE112024000552T5 (https=) |
| TW (1) | TWI899892B (https=) |
| WO (1) | WO2024195629A1 (https=) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273016A (ja) * | 2002-01-11 | 2003-09-26 | Sharp Corp | 半導体膜およびその形成方法、並びに、その半導体膜を用いた半導体装置、ディスプレイ装置。 |
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5189674B2 (ja) * | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9368582B2 (en) * | 2013-11-04 | 2016-06-14 | Avogy, Inc. | High power gallium nitride electronics using miscut substrates |
| WO2015125042A1 (en) * | 2014-02-19 | 2015-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide, semiconductor device, module, and electronic device |
| US20160268127A1 (en) * | 2015-03-13 | 2016-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide and Manufacturing Method Thereof |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| WO2022202795A1 (ja) * | 2021-03-26 | 2022-09-29 | 三菱マテリアル株式会社 | 金属板材、積層体、および、絶縁回路基板 |
-
2024
- 2024-03-12 WO PCT/JP2024/009575 patent/WO2024195629A1/ja not_active Ceased
- 2024-03-12 CN CN202480006547.4A patent/CN120570087A/zh active Pending
- 2024-03-12 JP JP2025508339A patent/JPWO2024195629A1/ja active Pending
- 2024-03-12 DE DE112024000552.7T patent/DE112024000552T5/de active Pending
- 2024-03-12 KR KR1020257022126A patent/KR20250117810A/ko active Pending
- 2024-03-15 TW TW113109602A patent/TWI899892B/zh active
-
2025
- 2025-09-05 US US19/319,774 patent/US20260006849A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024195629A1 (ja) | 2024-09-26 |
| KR20250117810A (ko) | 2025-08-05 |
| CN120570087A (zh) | 2025-08-29 |
| TW202439617A (zh) | 2024-10-01 |
| US20260006849A1 (en) | 2026-01-01 |
| TWI899892B (zh) | 2025-10-01 |
| DE112024000552T5 (de) | 2025-12-11 |