TWI899892B - 薄膜電晶體及電子機器 - Google Patents

薄膜電晶體及電子機器

Info

Publication number
TWI899892B
TWI899892B TW113109602A TW113109602A TWI899892B TW I899892 B TWI899892 B TW I899892B TW 113109602 A TW113109602 A TW 113109602A TW 113109602 A TW113109602 A TW 113109602A TW I899892 B TWI899892 B TW I899892B
Authority
TW
Taiwan
Prior art keywords
oxide semiconductor
semiconductor layer
film transistor
thin film
film
Prior art date
Application number
TW113109602A
Other languages
English (en)
Chinese (zh)
Other versions
TW202439617A (zh
Inventor
渡壁創
津吹将志
佐佐木俊成
田丸尊也
望月真里奈
小野寺涼
渡部将弘
川嶋絵美
霍間勇輝
佐佐木大地
Original Assignee
日商日本顯示器股份有限公司
日商出光興產股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本顯示器股份有限公司, 日商出光興產股份有限公司 filed Critical 日商日本顯示器股份有限公司
Publication of TW202439617A publication Critical patent/TW202439617A/zh
Application granted granted Critical
Publication of TWI899892B publication Critical patent/TWI899892B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO

Landscapes

  • Thin Film Transistor (AREA)
TW113109602A 2023-03-17 2024-03-15 薄膜電晶體及電子機器 TWI899892B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-043065 2023-03-17
JP2023043065 2023-03-17

Publications (2)

Publication Number Publication Date
TW202439617A TW202439617A (zh) 2024-10-01
TWI899892B true TWI899892B (zh) 2025-10-01

Family

ID=92842100

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113109602A TWI899892B (zh) 2023-03-17 2024-03-15 薄膜電晶體及電子機器

Country Status (7)

Country Link
US (1) US20260006849A1 (https=)
JP (1) JPWO2024195629A1 (https=)
KR (1) KR20250117810A (https=)
CN (1) CN120570087A (https=)
DE (1) DE112024000552T5 (https=)
TW (1) TWI899892B (https=)
WO (1) WO2024195629A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200301924A (en) * 2002-01-11 2003-07-16 Sharp Kk Semiconductor film and method of forming the same, and semiconductor device and display apparatus using the semiconductor film
JP2012253315A (ja) * 2010-12-28 2012-12-20 Idemitsu Kosan Co Ltd 酸化物半導体薄膜層を有する積層構造及び薄膜トランジスタ
JP2015173259A (ja) * 2014-02-19 2015-10-01 株式会社半導体エネルギー研究所 酸化物、半導体装置、モジュールおよび電子機器
JP2016180178A (ja) * 2015-03-13 2016-10-13 株式会社半導体エネルギー研究所 酸化物およびその作製方法
WO2022202795A1 (ja) * 2021-03-26 2022-09-29 三菱マテリアル株式会社 金属板材、積層体、および、絶縁回路基板
JP2023025002A (ja) * 2013-11-04 2023-02-21 アヴォジー，インコーポレイテッド ミスカット基板を用いた高パワーの窒化ガリウムエレクトロニクス

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200301924A (en) * 2002-01-11 2003-07-16 Sharp Kk Semiconductor film and method of forming the same, and semiconductor device and display apparatus using the semiconductor film
JP2012253315A (ja) * 2010-12-28 2012-12-20 Idemitsu Kosan Co Ltd 酸化物半導体薄膜層を有する積層構造及び薄膜トランジスタ
JP2023025002A (ja) * 2013-11-04 2023-02-21 アヴォジー，インコーポレイテッド ミスカット基板を用いた高パワーの窒化ガリウムエレクトロニクス
JP2015173259A (ja) * 2014-02-19 2015-10-01 株式会社半導体エネルギー研究所 酸化物、半導体装置、モジュールおよび電子機器
JP2016180178A (ja) * 2015-03-13 2016-10-13 株式会社半導体エネルギー研究所 酸化物およびその作製方法
WO2022202795A1 (ja) * 2021-03-26 2022-09-29 三菱マテリアル株式会社 金属板材、積層体、および、絶縁回路基板

Also Published As

Publication number Publication date
WO2024195629A1 (ja) 2024-09-26
KR20250117810A (ko) 2025-08-05
CN120570087A (zh) 2025-08-29
TW202439617A (zh) 2024-10-01
US20260006849A1 (en) 2026-01-01
DE112024000552T5 (de) 2025-12-11
JPWO2024195629A1 (https=) 2024-09-26

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