CN120570087A - 薄膜晶体管及电子设备 - Google Patents

薄膜晶体管及电子设备

Info

Publication number
CN120570087A
CN120570087A CN202480006547.4A CN202480006547A CN120570087A CN 120570087 A CN120570087 A CN 120570087A CN 202480006547 A CN202480006547 A CN 202480006547A CN 120570087 A CN120570087 A CN 120570087A
Authority
CN
China
Prior art keywords
oxide semiconductor
semiconductor layer
thin film
film transistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480006547.4A
Other languages
English (en)
Chinese (zh)
Inventor
渡壁创
津吹将志
佐佐木俊成
田丸尊也
望月真里奈
小野寺凉
渡部将弘
川岛绘美
霍间勇辉
佐佐木大地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Japan Display Inc
Original Assignee
Idemitsu Kosan Co Ltd
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd, Japan Display Inc filed Critical Idemitsu Kosan Co Ltd
Publication of CN120570087A publication Critical patent/CN120570087A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO

Landscapes

  • Thin Film Transistor (AREA)
CN202480006547.4A 2023-03-17 2024-03-12 薄膜晶体管及电子设备 Pending CN120570087A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-043065 2023-03-17
JP2023043065 2023-03-17
PCT/JP2024/009575 WO2024195629A1 (ja) 2023-03-17 2024-03-12 薄膜トランジスタおよび電子機器

Publications (1)

Publication Number Publication Date
CN120570087A true CN120570087A (zh) 2025-08-29

Family

ID=92842100

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480006547.4A Pending CN120570087A (zh) 2023-03-17 2024-03-12 薄膜晶体管及电子设备

Country Status (7)

Country Link
US (1) US20260006849A1 (https=)
JP (1) JPWO2024195629A1 (https=)
KR (1) KR20250117810A (https=)
CN (1) CN120570087A (https=)
DE (1) DE112024000552T5 (https=)
TW (1) TWI899892B (https=)
WO (1) WO2024195629A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273016A (ja) * 2002-01-11 2003-09-26 Sharp Corp 半導体膜およびその形成方法、並びに、その半導体膜を用いた半導体装置、ディスプレイ装置。
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5189674B2 (ja) * 2010-12-28 2013-04-24 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9368582B2 (en) * 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates
WO2015125042A1 (en) * 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
US20160268127A1 (en) * 2015-03-13 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Oxide and Manufacturing Method Thereof
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
WO2022202795A1 (ja) * 2021-03-26 2022-09-29 三菱マテリアル株式会社 金属板材、積層体、および、絶縁回路基板

Also Published As

Publication number Publication date
WO2024195629A1 (ja) 2024-09-26
KR20250117810A (ko) 2025-08-05
TW202439617A (zh) 2024-10-01
US20260006849A1 (en) 2026-01-01
TWI899892B (zh) 2025-10-01
DE112024000552T5 (de) 2025-12-11
JPWO2024195629A1 (https=) 2024-09-26

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