KR20250113524A - 반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들 - Google Patents

반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들

Info

Publication number
KR20250113524A
KR20250113524A KR1020257023475A KR20257023475A KR20250113524A KR 20250113524 A KR20250113524 A KR 20250113524A KR 1020257023475 A KR1020257023475 A KR 1020257023475A KR 20257023475 A KR20257023475 A KR 20257023475A KR 20250113524 A KR20250113524 A KR 20250113524A
Authority
KR
South Korea
Prior art keywords
coating
thickness
end effector
ohm
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257023475A
Other languages
English (en)
Korean (ko)
Inventor
가야트리 나투
게티카 바자즈
프레르나 고라디아
다샨 타카레
데이비드 펜윅
샤오밍 헤
산니 세팰래
제니퍼 순
라즈쿠마르 타누
제프리 허진스
카룹파사미 무투카마치
아룬 다야란
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20250113524A publication Critical patent/KR20250113524A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J18/00—Arms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J19/00—Accessories fitted to manipulators, e.g. for monitoring, for viewing; Safety devices combined with or specially adapted for use in connection with manipulators
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01L21/68707—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F1/00—Preventing the formation of electrostatic charges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00—Carrying-off electrostatic charges
    • H05F3/02—Carrying-off electrostatic charges by means of earthing connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F1/00—Preventing the formation of electrostatic charges
    • H05F1/02—Preventing the formation of electrostatic charges by surface treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
KR1020257023475A 2019-09-26 2020-09-28 반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들 Pending KR20250113524A (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
IN201941038863 2019-09-26
IN201941038863 2019-09-26
US16/890,336 2020-06-02
US16/890,346 2020-06-02
US16/890,336 US11540432B2 (en) 2019-09-26 2020-06-02 Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools
US16/890,346 US11547030B2 (en) 2019-09-26 2020-06-02 Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools
PCT/US2020/053036 WO2021062349A1 (en) 2019-09-26 2020-09-28 Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools
KR1020227013686A KR102836195B1 (ko) 2019-09-26 2020-09-28 반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227013686A Division KR102836195B1 (ko) 2019-09-26 2020-09-28 반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들

Publications (1)

Publication Number Publication Date
KR20250113524A true KR20250113524A (ko) 2025-07-25

Family

ID=75162433

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257023475A Pending KR20250113524A (ko) 2019-09-26 2020-09-28 반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들
KR1020227013686A Active KR102836195B1 (ko) 2019-09-26 2020-09-28 반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227013686A Active KR102836195B1 (ko) 2019-09-26 2020-09-28 반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들

Country Status (6)

Country Link
US (4) US11540432B2 (https=)
JP (3) JP7662619B2 (https=)
KR (2) KR20250113524A (https=)
CN (2) CN114424676B (https=)
TW (3) TW202446985A (https=)
WO (1) WO2021062349A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11540432B2 (en) 2019-09-26 2022-12-27 Applied Materials, Inc. Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools
WO2022269429A1 (en) * 2021-06-25 2022-12-29 Advanced Potash Technologies, Ltd. Multi-step methods of making a high temperature multi-phase material and related materials, compositions and methods of use
US12557595B2 (en) * 2022-01-26 2026-02-17 Applied Materials, Inc. Methods for electrostatic chuck ceramic surfacing
TW202346240A (zh) * 2022-02-26 2023-12-01 日商Ｔｏｔｏ股份有限公司 複合結構物及具備複合結構物之半導體製造裝置
JP2023124886A (ja) * 2022-02-26 2023-09-07 Toto株式会社 複合構造物および複合構造物を備えた半導体製造装置
JP2023124885A (ja) * 2022-02-26 2023-09-07 Toto株式会社 複合構造物および複合構造物を備えた半導体製造装置
KR102705799B1 (ko) * 2022-03-29 2024-09-12 세메스 주식회사 로봇 암 및 이를 포함하는 기판처리장치
JP2025522592A (ja) * 2022-06-28 2025-07-15 インテグリス・インコーポレーテッド 送達システムのためのモジュールおよび関連方法
KR20250029243A (ko) * 2022-07-05 2025-03-04 램 리써치 코포레이션 엔드 이펙터
KR102652284B1 (ko) * 2022-07-11 2024-03-28 한국생산기술연구원 기판 이송용 핸드
US12588463B2 (en) * 2023-04-21 2026-03-24 STATS ChipPAC Pte. Ltd. Semiconductor device and methods of making and using an enhanced carrier to reduce electrostatic discharge
CN116891131A (zh) * 2023-06-01 2023-10-17 张组 一种铺砖路面用地砖的终端转运设备
JP2025047784A (ja) * 2023-09-21 2025-04-03 キヤノントッキ株式会社 成膜装置及び成膜方法
JP2025047786A (ja) * 2023-09-21 2025-04-03 キヤノントッキ株式会社 成膜装置及び成膜方法
JP2025047785A (ja) * 2023-09-21 2025-04-03 キヤノントッキ株式会社 成膜装置及び成膜方法
WO2025079541A1 (ja) * 2023-10-12 2025-04-17 セントラル硝子株式会社 成膜方法、半導体デバイスの製造方法、及び成膜システム
US20250149373A1 (en) * 2023-11-06 2025-05-08 Applied Materials, Inc. Soft touch coating materials for substrate handling
US20250226258A1 (en) * 2024-01-10 2025-07-10 Applied Materials, Inc. Compact faceplate loading platform

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2031098A1 (en) * 1990-01-16 1991-07-17 William F. Banholzer Cvd diamond coated annulus components and method of their fabrication
US5756222A (en) * 1994-08-15 1998-05-26 Applied Materials, Inc. Corrosion-resistant aluminum article for semiconductor processing equipment
US5955858A (en) 1997-02-14 1999-09-21 Applied Materials, Inc. Mechanically clamping robot wrist
US6641939B1 (en) 1998-07-01 2003-11-04 The Morgan Crucible Company Plc Transition metal oxide doped alumina and methods of making and using
TW543079B (en) * 1999-06-03 2003-07-21 Applied Materials Inc Robot blade for semiconductor processing equipment
US6290859B1 (en) * 1999-11-12 2001-09-18 Sandia Corporation Tungsten coating for improved wear resistance and reliability of microelectromechanical devices
US6316734B1 (en) * 2000-03-07 2001-11-13 3M Innovative Properties Company Flexible circuits with static discharge protection and process for manufacture
JP2002292920A (ja) * 2001-04-02 2002-10-09 Matsushita Electric Ind Co Ltd 電極構造体およびその製造方法ならびに電極構造体を用いる画像形成装置
US20080213496A1 (en) 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US20040183135A1 (en) * 2003-03-19 2004-09-23 Oh-Hun Kwon ESD dissipative structural components
JP4895635B2 (ja) * 2006-02-20 2012-03-14 セイコーインスツル株式会社 搬送装置
US9204525B2 (en) 2006-07-07 2015-12-01 Cocoon Inc. Protective covers
KR101119075B1 (ko) * 2007-03-12 2012-03-15 주식회사 코미코 웨이퍼 이송 장치
KR100825418B1 (ko) 2007-10-15 2008-04-29 (주)쓰리나인 케이스 외관의 정전기 방지용 박막 및 그 제조방법
FI20095947A0 (fi) * 2009-09-14 2009-09-14 Beneq Oy Monikerrospinnoite, menetelmä monikerrospinnoitteen valmistamiseksi, ja sen käyttötapoja
WO2012088172A2 (en) 2010-12-20 2012-06-28 Entegris, Inc. Front opening large substrate container
US9105379B2 (en) 2011-01-21 2015-08-11 Uchicago Argonne, Llc Tunable resistance coatings
KR101387387B1 (ko) 2011-12-21 2014-04-30 (주)탑나노시스 대전방지용 시트 및 이를 포함하여 대전방지된 작업 스테이지
US20150311043A1 (en) * 2014-04-25 2015-10-29 Applied Materials, Inc. Chamber component with fluorinated thin film coating
US20150334812A1 (en) * 2014-05-16 2015-11-19 John Mazzocco Design to manage charge and discharge of wafers and wafer carrier rings
TWI676227B (zh) * 2015-01-23 2019-11-01 美商應用材料股份有限公司 半導體工藝設備
US9881820B2 (en) 2015-10-22 2018-01-30 Lam Research Corporation Front opening ring pod
US20170140902A1 (en) 2015-11-16 2017-05-18 Coorstek, Inc. Corrosion-resistant components and methods of making
CN108292588B (zh) 2015-12-04 2022-02-18 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
US9850573B1 (en) * 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US20180016678A1 (en) * 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
JP2018142597A (ja) * 2017-02-27 2018-09-13 三菱ケミカル株式会社 太陽電池モジュール
JP7019529B2 (ja) * 2018-07-30 2022-02-15 京セラ株式会社 試料搬送部材
US11540432B2 (en) 2019-09-26 2022-12-27 Applied Materials, Inc. Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools

Also Published As

Publication number Publication date
TW202126845A (zh) 2021-07-16
JP2022548981A (ja) 2022-11-22
JP2024001007A (ja) 2024-01-09
JP2025121899A (ja) 2025-08-20
KR102836195B1 (ko) 2025-07-17
TWI853096B (zh) 2024-08-21
WO2021062349A1 (en) 2021-04-01
TW202446984A (zh) 2024-12-01
TWI887047B (zh) 2025-06-11
US20240284650A1 (en) 2024-08-22
TW202446985A (zh) 2024-12-01
US11547030B2 (en) 2023-01-03
US12564012B2 (en) 2026-02-24
US11540432B2 (en) 2022-12-27
US20210100087A1 (en) 2021-04-01
CN121023476A (zh) 2025-11-28
US12004337B2 (en) 2024-06-04
CN114424676A (zh) 2022-04-29
KR20220066389A (ko) 2022-05-24
JP7662619B2 (ja) 2025-04-15
CN114424676B (zh) 2025-08-05
JP7715772B2 (ja) 2025-07-30
US20230077895A1 (en) 2023-03-16
US20210100141A1 (en) 2021-04-01

Similar Documents

Publication Publication Date Title
KR102836195B1 (ko) 반도체 프로세스 도구들의 정전기 소산을 위한 초박형 컨포멀 코팅들
US11008653B2 (en) Multi-layer coating with diffusion barrier layer and erosion resistant layer
CN212357383U (zh) 制品
KR102917964B1 (ko) 챔버 성능을 향상시키기 위한 불화물 코팅
KR20200030629A (ko) 고온 가열기들을 위한 원자 층 증착 코팅들
US12305275B2 (en) Corrosion resistant film on a chamber component and methods of depositing thereof
TW202012168A (zh) 通過原子層沉積來沉積的抗侵蝕金屬氧化物塗層
US20240401197A1 (en) Erosion resistant metal fluoride coatings deposited by atomic layer deposition
TW202607173A (zh) 原子層沉積所沉積的抗侵蝕金屬氟化物塗層

Legal Events

Date Code Title Description
A16 Divisional, continuation or continuation in part application filed

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE)

A18 Application divided or continuation or continuation in part accepted

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A18-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE)

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902