KR20250107284A - 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 - Google Patents

보호 코팅을 갖는 프로세스 챔버 프로세스 키트 Download PDF

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Publication number
KR20250107284A
KR20250107284A KR1020257021611A KR20257021611A KR20250107284A KR 20250107284 A KR20250107284 A KR 20250107284A KR 1020257021611 A KR1020257021611 A KR 1020257021611A KR 20257021611 A KR20257021611 A KR 20257021611A KR 20250107284 A KR20250107284 A KR 20250107284A
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KR
South Korea
Prior art keywords
silica
component
chamber
layer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257021611A
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English (en)
Korean (ko)
Inventor
지안 우
웨이 리우
린린 왕
테레사 크라머 구아리니
말콤 베반
라라 호릴차크
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20250107284A publication Critical patent/KR20250107284A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020257021611A 2018-06-14 2019-05-21 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 Pending KR20250107284A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862685098P 2018-06-14 2018-06-14
US62/685,098 2018-06-14
PCT/US2019/033259 WO2019240915A1 (en) 2018-06-14 2019-05-21 Process chamber process kit with protective coating
KR1020217001257A KR102828235B1 (ko) 2018-06-14 2019-05-21 보호 코팅을 갖는 프로세스 챔버 프로세스 키트

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217001257A Division KR102828235B1 (ko) 2018-06-14 2019-05-21 보호 코팅을 갖는 프로세스 챔버 프로세스 키트

Publications (1)

Publication Number Publication Date
KR20250107284A true KR20250107284A (ko) 2025-07-11

Family

ID=68840245

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257021611A Pending KR20250107284A (ko) 2018-06-14 2019-05-21 보호 코팅을 갖는 프로세스 챔버 프로세스 키트
KR1020217001257A Active KR102828235B1 (ko) 2018-06-14 2019-05-21 보호 코팅을 갖는 프로세스 챔버 프로세스 키트

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020217001257A Active KR102828235B1 (ko) 2018-06-14 2019-05-21 보호 코팅을 갖는 프로세스 챔버 프로세스 키트

Country Status (6)

Country Link
US (3) US12354843B2 (enExample)
JP (2) JP7405776B2 (enExample)
KR (2) KR20250107284A (enExample)
CN (2) CN112236839B (enExample)
TW (2) TWI880527B (enExample)
WO (1) WO2019240915A1 (enExample)

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US11664247B2 (en) 2020-10-16 2023-05-30 Applied Materials, Inc. Dynamic interface for providing a symmetric radio frequency return path
US20230064070A1 (en) * 2021-08-30 2023-03-02 Auo Crystal Corporation Semiconductor processing equipment part and method for making the same
US20230215702A1 (en) * 2021-12-30 2023-07-06 Applied Materials, Inc. Uniformity control for plasma processing using wall recombination
WO2024097505A1 (en) * 2022-10-31 2024-05-10 Lam Research Corporation Component with a dual layer hermetic atomic layer deposition coatings for a semiconductor processing chamber
US20250201527A1 (en) * 2023-12-19 2025-06-19 Applied Materials, Inc. High Conformal Coating on Textured Surface of Processing Chamber Component

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JPH11238722A (ja) * 1997-12-17 1999-08-31 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6863926B2 (en) 2002-01-15 2005-03-08 David Mark Lynn Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments
US6780787B2 (en) * 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US20040033361A1 (en) * 2002-08-06 2004-02-19 Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) Component of glass-like carbon for CVD apparatus and process for production thereof
US7250114B2 (en) * 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
JP4606121B2 (ja) * 2004-01-29 2011-01-05 京セラ株式会社 耐食膜積層耐食性部材およびその製造方法
JP2006128370A (ja) * 2004-10-28 2006-05-18 Tokyo Electron Ltd 成膜装置、成膜方法、プログラムおよび記録媒体
US20090194233A1 (en) * 2005-06-23 2009-08-06 Tokyo Electron Limited Component for semicondutor processing apparatus and manufacturing method thereof
US20060292310A1 (en) 2005-06-27 2006-12-28 Applied Materials, Inc. Process kit design to reduce particle generation
US7541094B1 (en) * 2006-03-03 2009-06-02 Quantum Global Technologies, Llc Firepolished quartz parts for use in semiconductor processing
US20080063798A1 (en) * 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US8097105B2 (en) 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
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KR102243956B1 (ko) * 2014-01-31 2021-04-22 어플라이드 머티어리얼스, 인코포레이티드 챔버 코팅들
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Also Published As

Publication number Publication date
CN119890023A (zh) 2025-04-25
WO2019240915A1 (en) 2019-12-19
JP2021527328A (ja) 2021-10-11
US20230245863A1 (en) 2023-08-03
JP7405776B2 (ja) 2023-12-26
US12354843B2 (en) 2025-07-08
CN112236839A (zh) 2021-01-15
TW202418348A (zh) 2024-05-01
KR20210008931A (ko) 2021-01-25
US20190385825A1 (en) 2019-12-19
TWI880527B (zh) 2025-04-11
TW202013426A (zh) 2020-04-01
US20250385080A1 (en) 2025-12-18
TWI828704B (zh) 2024-01-11
JP2024037895A (ja) 2024-03-19
CN112236839B (zh) 2025-01-03
JP7776483B2 (ja) 2025-11-26
KR102828235B1 (ko) 2025-07-03

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