KR20250078464A - 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법 - Google Patents

연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법 Download PDF

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Publication number
KR20250078464A
KR20250078464A KR1020257011134A KR20257011134A KR20250078464A KR 20250078464 A KR20250078464 A KR 20250078464A KR 1020257011134 A KR1020257011134 A KR 1020257011134A KR 20257011134 A KR20257011134 A KR 20257011134A KR 20250078464 A KR20250078464 A KR 20250078464A
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KR
South Korea
Prior art keywords
mass
polishing
less
polishing solution
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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KR1020257011134A
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English (en)
Korean (ko)
Inventor
다이라 오누마
고헤이 히라오
야스시 구라타
Original Assignee
가부시끼가이샤 레조낙
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Publication of KR20250078464A publication Critical patent/KR20250078464A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H01L21/31053—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020257011134A 2022-10-27 2022-10-27 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법 Pending KR20250078464A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/040219 WO2024089850A1 (ja) 2022-10-27 2022-10-27 研磨液、研磨方法、部品の製造方法、及び、半導体部品の製造方法

Publications (1)

Publication Number Publication Date
KR20250078464A true KR20250078464A (ko) 2025-06-02

Family

ID=90830326

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257011134A Pending KR20250078464A (ko) 2022-10-27 2022-10-27 연마액, 연마 방법, 부품의 제조 방법, 및, 반도체 부품의 제조 방법

Country Status (5)

Country Link
US (1) US20250263582A1 (https=)
JP (1) JPWO2024089850A1 (https=)
KR (1) KR20250078464A (https=)
CN (1) CN119234296A (https=)
WO (1) WO2024089850A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008022970A (ja) 2006-07-19 2008-02-07 Pegasus Sewing Mach Mfg Co Ltd ミシンの針折れ検出装置
JP2010106994A (ja) 2008-10-31 2010-05-13 Ntn Corp 流体軸受装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171446A (ja) * 2010-02-17 2011-09-01 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及びこれを用いた研磨方法
WO2021081145A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
WO2021162111A1 (ja) * 2020-02-13 2021-08-19 昭和電工マテリアルズ株式会社 Ｃｍｐ研磨液及び研磨方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008022970A (ja) 2006-07-19 2008-02-07 Pegasus Sewing Mach Mfg Co Ltd ミシンの針折れ検出装置
JP2010106994A (ja) 2008-10-31 2010-05-13 Ntn Corp 流体軸受装置

Also Published As

Publication number Publication date
WO2024089850A1 (ja) 2024-05-02
CN119234296A (zh) 2024-12-31
JPWO2024089850A1 (https=) 2024-05-02
US20250263582A1 (en) 2025-08-21

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