KR20250005248A - 패턴 형성 방법, 전자 디바이스의 제조 방법 - Google Patents

패턴 형성 방법, 전자 디바이스의 제조 방법 Download PDF

Info

Publication number
KR20250005248A
KR20250005248A KR1020247037439A KR20247037439A KR20250005248A KR 20250005248 A KR20250005248 A KR 20250005248A KR 1020247037439 A KR1020247037439 A KR 1020247037439A KR 20247037439 A KR20247037439 A KR 20247037439A KR 20250005248 A KR20250005248 A KR 20250005248A
Authority
KR
South Korea
Prior art keywords
organic solvent
group
metal
substituent
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020247037439A
Other languages
English (en)
Korean (ko)
Inventor
미치히로 시라카와
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20250005248A publication Critical patent/KR20250005248A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2224—Compounds having one or more tin-oxygen linkages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
KR1020247037439A 2022-06-20 2023-06-14 패턴 형성 방법, 전자 디바이스의 제조 방법 Ceased KR20250005248A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2022098788 2022-06-20
JPJP-P-2022-098788 2022-06-20
JP2023049522 2023-03-27
JPJP-P-2023-049522 2023-03-27
PCT/JP2023/021998 WO2023248878A1 (ja) 2022-06-20 2023-06-14 パターン形成方法、電子デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20250005248A true KR20250005248A (ko) 2025-01-09

Family

ID=89379813

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247037439A Ceased KR20250005248A (ko) 2022-06-20 2023-06-14 패턴 형성 방법, 전자 디바이스의 제조 방법

Country Status (7)

Country Link
US (1) US20250085628A1 (https=)
EP (1) EP4542306A4 (https=)
JP (1) JPWO2023248878A1 (https=)
KR (1) KR20250005248A (https=)
CN (1) CN119173820A (https=)
TW (1) TW202409724A (https=)
WO (1) WO2023248878A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102703674B1 (ko) * 2022-08-02 2024-09-04 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR20250106596A (ko) * 2024-01-03 2025-07-10 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4550126B2 (ja) 2008-04-25 2010-09-22 東京エレクトロン株式会社 エッチングマスク形成方法、エッチング方法、および半導体デバイスの製造方法
JP2013061648A (ja) 2011-09-09 2013-04-04 Rohm & Haas Electronic Materials Llc フォトレジスト上塗り組成物および電子デバイスを形成する方法
JP5836299B2 (ja) 2012-08-20 2015-12-24 富士フイルム株式会社 パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びに、これらを用いた電子デバイスの製造方法
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP6427670B2 (ja) 2015-07-01 2018-11-21 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
WO2017057253A1 (ja) * 2015-09-30 2017-04-06 富士フイルム株式会社 処理液及びパターン形成方法
KR102508142B1 (ko) 2015-10-13 2023-03-08 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
KR102226446B1 (ko) * 2016-03-24 2021-03-11 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 조성물, 감활성광선성 또는 감방사선성 조성물의 정제 방법, 감활성광선성 또는 감방사선성 조성물의 제조 방법, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
US10954479B2 (en) 2016-07-26 2021-03-23 Fujimi Incorporated Composition for surface treatment and surface treatment method using the same
JP6791680B2 (ja) 2016-08-09 2020-11-25 株式会社フジミインコーポレーテッド 表面処理組成物およびこれを用いた洗浄方法
KR102395705B1 (ko) 2017-04-21 2022-05-09 후지필름 가부시키가이샤 Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법
WO2019111727A1 (ja) 2017-12-06 2019-06-13 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
JP7024744B2 (ja) * 2018-02-22 2022-02-24 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
CN110780536B (zh) * 2018-07-31 2023-05-16 三星Sdi株式会社 半导体抗蚀剂组合物及使用组合物形成图案的方法及系统
WO2020210660A1 (en) 2019-04-12 2020-10-15 Inpria Corporation Organometallic photoresist developer compositions and processing methods
KR102619719B1 (ko) 2020-05-12 2023-12-28 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법

Also Published As

Publication number Publication date
WO2023248878A1 (ja) 2023-12-28
JPWO2023248878A1 (https=) 2023-12-28
EP4542306A1 (en) 2025-04-23
TW202409724A (zh) 2024-03-01
CN119173820A (zh) 2024-12-20
US20250085628A1 (en) 2025-03-13
EP4542306A4 (en) 2025-11-26

Similar Documents

Publication Publication Date Title
US20250085628A1 (en) Pattern forming method and method for manufacturing electronic device
CN105122143A (zh) 化学增幅型抗蚀剂膜的图案化用有机系处理液的制造方法、化学增幅型抗蚀剂膜的图案化用有机系处理液、图案形成方法、电子元件的制造方法及电子元件
TW201842138A (zh) 藥液、藥液收容體及圖案形成方法
KR102542085B1 (ko) 레지스트 조성물 및 레지스트 패턴 형성 방법
KR102912739B1 (ko) 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
WO2021192802A1 (ja) 感放射線性樹脂組成物の製造方法、パターン形成方法
TW202117450A (zh) 預濕液、抗蝕劑膜形成方法、圖案形成方法、套組
TW202419476A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TWI850464B (zh) 預濕液、抗蝕劑膜形成方法、圖案形成方法、套組
KR20250111202A (ko) 처리액, 처리액 수용체
TW202432815A (zh) 處理液、處理液收容體
TW202449132A (zh) 藥液、藥液收容體
TW202433201A (zh) 藥液、藥液收容體
WO2026048572A1 (ja) 感光性組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2026048564A1 (ja) 感光性組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
TW202414084A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法及電子器件的製造方法
TW202347030A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件的製造方法
TW202419480A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件之製造方法及聚合物
WO2025047309A1 (ja) 感活性光線性又は感放射線性樹脂組成物の製造方法、パターン形成方法、及び電子デバイスの製造方法
TW202437013A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TW202436391A (zh) 感光化射線性或感放射線性樹脂組成物
TW202511313A (zh) 感光化射線性或感放射線性樹脂組成物、樹脂、光阻膜、圖案形成方法、及電子元件之製造方法
TW202432638A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TW202413457A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
TW202445264A (zh) 藥液、藥液收容體、圖案形成方法、電子元件之製造方法

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

B15 Application refused following examination

Free format text: ST27 STATUS EVENT CODE: N-2-6-B10-B15-EXM-PE0601 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000