JPWO2023248878A1 - - Google Patents
Info
- Publication number
- JPWO2023248878A1 JPWO2023248878A1 JP2024528894A JP2024528894A JPWO2023248878A1 JP WO2023248878 A1 JPWO2023248878 A1 JP WO2023248878A1 JP 2024528894 A JP2024528894 A JP 2024528894A JP 2024528894 A JP2024528894 A JP 2024528894A JP WO2023248878 A1 JPWO2023248878 A1 JP WO2023248878A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
- G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2224—Compounds having one or more tin-oxygen linkages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022098788 | 2022-06-20 | ||
| JP2023049522 | 2023-03-27 | ||
| PCT/JP2023/021998 WO2023248878A1 (ja) | 2022-06-20 | 2023-06-14 | パターン形成方法、電子デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023248878A1 true JPWO2023248878A1 (https=) | 2023-12-28 |
| JPWO2023248878A5 JPWO2023248878A5 (https=) | 2025-02-28 |
Family
ID=89379813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024528894A Pending JPWO2023248878A1 (https=) | 2022-06-20 | 2023-06-14 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250085628A1 (https=) |
| EP (1) | EP4542306A4 (https=) |
| JP (1) | JPWO2023248878A1 (https=) |
| KR (1) | KR20250005248A (https=) |
| CN (1) | CN119173820A (https=) |
| TW (1) | TW202409724A (https=) |
| WO (1) | WO2023248878A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102703674B1 (ko) * | 2022-08-02 | 2024-09-04 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR20250106596A (ko) * | 2024-01-03 | 2025-07-10 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4550126B2 (ja) | 2008-04-25 | 2010-09-22 | 東京エレクトロン株式会社 | エッチングマスク形成方法、エッチング方法、および半導体デバイスの製造方法 |
| JP2013061648A (ja) | 2011-09-09 | 2013-04-04 | Rohm & Haas Electronic Materials Llc | フォトレジスト上塗り組成物および電子デバイスを形成する方法 |
| JP5836299B2 (ja) | 2012-08-20 | 2015-12-24 | 富士フイルム株式会社 | パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びに、これらを用いた電子デバイスの製造方法 |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| JP6427670B2 (ja) | 2015-07-01 | 2018-11-21 | 富士フイルム株式会社 | パターン形成方法、及び電子デバイスの製造方法 |
| WO2017057253A1 (ja) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | 処理液及びパターン形成方法 |
| KR102508142B1 (ko) | 2015-10-13 | 2023-03-08 | 인프리아 코포레이션 | 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝 |
| KR102226446B1 (ko) * | 2016-03-24 | 2021-03-11 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 조성물, 감활성광선성 또는 감방사선성 조성물의 정제 방법, 감활성광선성 또는 감방사선성 조성물의 제조 방법, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| US10954479B2 (en) | 2016-07-26 | 2021-03-23 | Fujimi Incorporated | Composition for surface treatment and surface treatment method using the same |
| JP6791680B2 (ja) | 2016-08-09 | 2020-11-25 | 株式会社フジミインコーポレーテッド | 表面処理組成物およびこれを用いた洗浄方法 |
| KR102395705B1 (ko) | 2017-04-21 | 2022-05-09 | 후지필름 가부시키가이샤 | Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| WO2019111727A1 (ja) | 2017-12-06 | 2019-06-13 | Jsr株式会社 | 感放射線性組成物及びレジストパターン形成方法 |
| JP7024744B2 (ja) * | 2018-02-22 | 2022-02-24 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| CN110780536B (zh) * | 2018-07-31 | 2023-05-16 | 三星Sdi株式会社 | 半导体抗蚀剂组合物及使用组合物形成图案的方法及系统 |
| WO2020210660A1 (en) | 2019-04-12 | 2020-10-15 | Inpria Corporation | Organometallic photoresist developer compositions and processing methods |
| KR102619719B1 (ko) | 2020-05-12 | 2023-12-28 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
-
2023
- 2023-06-14 JP JP2024528894A patent/JPWO2023248878A1/ja active Pending
- 2023-06-14 WO PCT/JP2023/021998 patent/WO2023248878A1/ja not_active Ceased
- 2023-06-14 KR KR1020247037439A patent/KR20250005248A/ko not_active Ceased
- 2023-06-14 CN CN202380040058.6A patent/CN119173820A/zh active Pending
- 2023-06-14 EP EP23827064.9A patent/EP4542306A4/en active Pending
- 2023-06-17 TW TW112122778A patent/TW202409724A/zh unknown
-
2024
- 2024-11-22 US US18/957,102 patent/US20250085628A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023248878A1 (ja) | 2023-12-28 |
| EP4542306A1 (en) | 2025-04-23 |
| TW202409724A (zh) | 2024-03-01 |
| CN119173820A (zh) | 2024-12-20 |
| US20250085628A1 (en) | 2025-03-13 |
| KR20250005248A (ko) | 2025-01-09 |
| EP4542306A4 (en) | 2025-11-26 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241106 |