KR20240168321A - 회합성 가스를 반도체 제조 장치에 공급하는 방법 - Google Patents

회합성 가스를 반도체 제조 장치에 공급하는 방법 Download PDF

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Publication number
KR20240168321A
KR20240168321A KR1020247031152A KR20247031152A KR20240168321A KR 20240168321 A KR20240168321 A KR 20240168321A KR 1020247031152 A KR1020247031152 A KR 1020247031152A KR 20247031152 A KR20247031152 A KR 20247031152A KR 20240168321 A KR20240168321 A KR 20240168321A
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KR
South Korea
Prior art keywords
gas
pressure
associative
temperature
conversion factor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247031152A
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English (en)
Korean (ko)
Inventor
마사토 스기모토
Original Assignee
구와나 메탈스, 엘티디.
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Application filed by 구와나 메탈스, 엘티디. filed Critical 구와나 메탈스, 엘티디.
Publication of KR20240168321A publication Critical patent/KR20240168321A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H01L21/67276—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • H01L21/67017—
    • H01L21/67248—
    • H01L21/67253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
KR1020247031152A 2022-03-24 2022-12-21 회합성 가스를 반도체 제조 장치에 공급하는 방법 Pending KR20240168321A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-049106 2022-03-24
JP2022049106 2022-03-24
PCT/JP2022/047207 WO2023181548A1 (ja) 2022-03-24 2022-12-21 会合性ガスを半導体製造装置に供給する方法

Publications (1)

Publication Number Publication Date
KR20240168321A true KR20240168321A (ko) 2024-11-29

Family

ID=88100869

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247031152A Pending KR20240168321A (ko) 2022-03-24 2022-12-21 회합성 가스를 반도체 제조 장치에 공급하는 방법

Country Status (6)

Country Link
US (1) US20250246448A1 (https=)
JP (1) JPWO2023181548A1 (https=)
KR (1) KR20240168321A (https=)
CN (1) CN118946954A (https=)
TW (1) TW202401541A (https=)
WO (1) WO2023181548A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004264881A (ja) 2003-01-17 2004-09-24 Tadahiro Omi 弗化水素ガスの流量制御方法及びこれに用いる弗化水素ガス用流量制御装置
JP2006031498A (ja) 2004-07-20 2006-02-02 Tohoku Univ クラスター化する流体の流量制御方法及びこれに用いるクラスター化する流体用の流量制御装置
JP2008146641A (ja) 2006-11-13 2008-06-26 Tokyo Electron Ltd 処理ガスの供給方法、処理ガスの供給システム及び被処理体の処理システム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4810355B2 (ja) * 2006-08-24 2011-11-09 富士通セミコンダクター株式会社 処理ガス供給方法、基板処理方法、半導体装置の製造方法、処理ガス供給装置、基板処理装置、および記録媒体
JP4974000B2 (ja) * 2007-10-01 2012-07-11 日立金属株式会社 質量流量制御装置及び実ガスの質量流量制御方法
JP2020141038A (ja) * 2019-02-28 2020-09-03 東京エレクトロン株式会社 ガス供給方法およびガス供給システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004264881A (ja) 2003-01-17 2004-09-24 Tadahiro Omi 弗化水素ガスの流量制御方法及びこれに用いる弗化水素ガス用流量制御装置
JP2006031498A (ja) 2004-07-20 2006-02-02 Tohoku Univ クラスター化する流体の流量制御方法及びこれに用いるクラスター化する流体用の流量制御装置
JP2008146641A (ja) 2006-11-13 2008-06-26 Tokyo Electron Ltd 処理ガスの供給方法、処理ガスの供給システム及び被処理体の処理システム

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EUROFLUOR(CTEF), "GENERAL PROPERTIES OF ANHYDROUS HYDROGEN FLUORIDE(AHF) AND HYDROFLUORIC ACID SOLUTIONS(HF)", (Kingdom of Belgium), EUROFLUOR(CTEF), 2016.03.29, p.10.

Also Published As

Publication number Publication date
WO2023181548A1 (ja) 2023-09-28
CN118946954A (zh) 2024-11-12
TW202401541A (zh) 2024-01-01
US20250246448A1 (en) 2025-07-31
JPWO2023181548A1 (https=) 2023-09-28

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