CN118946954A - 向半导体制造装置供给缔合性气体的方法 - Google Patents

向半导体制造装置供给缔合性气体的方法 Download PDF

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Publication number
CN118946954A
CN118946954A CN202280093980.7A CN202280093980A CN118946954A CN 118946954 A CN118946954 A CN 118946954A CN 202280093980 A CN202280093980 A CN 202280093980A CN 118946954 A CN118946954 A CN 118946954A
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CN
China
Prior art keywords
gas
pressure
associative
temperature
conversion factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280093980.7A
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English (en)
Chinese (zh)
Inventor
杉本真乡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sang Ming Metal Industry Co ltd
Original Assignee
Sang Ming Metal Industry Co ltd
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Filing date
Publication date
Application filed by Sang Ming Metal Industry Co ltd filed Critical Sang Ming Metal Industry Co ltd
Publication of CN118946954A publication Critical patent/CN118946954A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
CN202280093980.7A 2022-03-24 2022-12-21 向半导体制造装置供给缔合性气体的方法 Pending CN118946954A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-049106 2022-03-24
JP2022049106 2022-03-24
PCT/JP2022/047207 WO2023181548A1 (ja) 2022-03-24 2022-12-21 会合性ガスを半導体製造装置に供給する方法

Publications (1)

Publication Number Publication Date
CN118946954A true CN118946954A (zh) 2024-11-12

Family

ID=88100869

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280093980.7A Pending CN118946954A (zh) 2022-03-24 2022-12-21 向半导体制造装置供给缔合性气体的方法

Country Status (6)

Country Link
US (1) US20250246448A1 (https=)
JP (1) JPWO2023181548A1 (https=)
KR (1) KR20240168321A (https=)
CN (1) CN118946954A (https=)
TW (1) TW202401541A (https=)
WO (1) WO2023181548A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4195819B2 (ja) 2003-01-17 2008-12-17 忠弘 大見 弗化水素ガスの流量制御方法及びこれに用いる弗化水素ガス用流量制御装置
JP4364740B2 (ja) * 2004-07-20 2009-11-18 国立大学法人東北大学 クラスター化する流体の流量制御方法及びこれに用いるクラスター化する流体用の流量制御装置
JP4810355B2 (ja) * 2006-08-24 2011-11-09 富士通セミコンダクター株式会社 処理ガス供給方法、基板処理方法、半導体装置の製造方法、処理ガス供給装置、基板処理装置、および記録媒体
US20100037959A1 (en) * 2006-11-13 2010-02-18 Takayuki Kamaishi Method for supplying process gas, system for supplying process gas, and system for processing object to be processed
JP4974000B2 (ja) * 2007-10-01 2012-07-11 日立金属株式会社 質量流量制御装置及び実ガスの質量流量制御方法
JP2020141038A (ja) * 2019-02-28 2020-09-03 東京エレクトロン株式会社 ガス供給方法およびガス供給システム

Also Published As

Publication number Publication date
JPWO2023181548A1 (https=) 2023-09-28
KR20240168321A (ko) 2024-11-29
WO2023181548A1 (ja) 2023-09-28
US20250246448A1 (en) 2025-07-31
TW202401541A (zh) 2024-01-01

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