KR20240158319A - 시료 측정 장치 - Google Patents

시료 측정 장치 Download PDF

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Publication number
KR20240158319A
KR20240158319A KR1020247033184A KR20247033184A KR20240158319A KR 20240158319 A KR20240158319 A KR 20240158319A KR 1020247033184 A KR1020247033184 A KR 1020247033184A KR 20247033184 A KR20247033184 A KR 20247033184A KR 20240158319 A KR20240158319 A KR 20240158319A
Authority
KR
South Korea
Prior art keywords
sample
control device
light
detection signal
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247033184A
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English (en)
Korean (ko)
Inventor
야스히로 시라사끼
미나미 우찌호
다이스께 비젠
마꼬또 사까끼바라
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20240158319A publication Critical patent/KR20240158319A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2204—Specimen supports therefor; Sample conveying means therefore
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020247033184A 2022-08-05 2022-08-05 시료 측정 장치 Pending KR20240158319A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/030067 WO2024029060A1 (ja) 2022-08-05 2022-08-05 試料測定装置

Publications (1)

Publication Number Publication Date
KR20240158319A true KR20240158319A (ko) 2024-11-04

Family

ID=89848742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247033184A Pending KR20240158319A (ko) 2022-08-05 2022-08-05 시료 측정 장치

Country Status (4)

Country Link
JP (1) JPWO2024029060A1 (https=)
KR (1) KR20240158319A (https=)
TW (1) TWI888844B (https=)
WO (1) WO2024029060A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144155A (ja) 1999-11-18 2001-05-25 Matsushita Electronics Industry Corp 半導体解析装置および解析方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162253A (ja) * 1995-12-08 1997-06-20 Hitachi Ltd 半導体評価装置
US6667476B2 (en) * 1998-03-09 2003-12-23 Hitachi, Ltd. Scanning electron microscope
KR100327337B1 (ko) * 1999-08-17 2002-03-06 윤종용 반도체 장치 제조에서 사용되는 플라즈마에 의해서 유기되는전하 대전 정도를 판별하는 방법 및 이에 이용되는 판별장치
JP4248382B2 (ja) * 2003-12-04 2009-04-02 株式会社日立ハイテクノロジーズ 荷電粒子ビームによる検査方法および検査装置
JP2007322411A (ja) * 2006-05-02 2007-12-13 Univ Of Tokyo エネルギー準位の測定方法、分析方法
JP5434164B2 (ja) * 2009-03-16 2014-03-05 株式会社リコー 静電潜像の評価方法、静電潜像の評価装置および画像形成装置
JP6232195B2 (ja) * 2013-03-21 2017-11-15 株式会社荏原製作所 試料検査装置及び試料の検査方法
CN108603851B (zh) * 2016-03-16 2021-01-01 株式会社日立高新技术 缺陷检查装置
JP7148467B2 (ja) * 2019-08-30 2022-10-05 株式会社日立ハイテク 荷電粒子線装置
JP7547227B2 (ja) * 2021-01-21 2024-09-09 株式会社ニューフレアテクノロジー マルチビーム画像取得装置及びマルチビーム画像取得方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144155A (ja) 1999-11-18 2001-05-25 Matsushita Electronics Industry Corp 半導体解析装置および解析方法

Also Published As

Publication number Publication date
TWI888844B (zh) 2025-07-01
JPWO2024029060A1 (https=) 2024-02-08
TW202407342A (zh) 2024-02-16
WO2024029060A1 (ja) 2024-02-08

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20241004

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application