KR20240148842A - 에칭 방법 - Google Patents

에칭 방법 Download PDF

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Publication number
KR20240148842A
KR20240148842A KR1020247027142A KR20247027142A KR20240148842A KR 20240148842 A KR20240148842 A KR 20240148842A KR 1020247027142 A KR1020247027142 A KR 1020247027142A KR 20247027142 A KR20247027142 A KR 20247027142A KR 20240148842 A KR20240148842 A KR 20240148842A
Authority
KR
South Korea
Prior art keywords
etching
compound
atom
carbon atoms
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247027142A
Other languages
English (en)
Korean (ko)
Inventor
아츠시 스즈키
Original Assignee
가부시끼가이샤 레조낙
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 레조낙 filed Critical 가부시끼가이샤 레조낙
Publication of KR20240148842A publication Critical patent/KR20240148842A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L21/31116—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
KR1020247027142A 2022-02-16 2022-12-13 에칭 방법 Pending KR20240148842A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022022024 2022-02-16
JPJP-P-2022-022024 2022-02-16
PCT/JP2022/045919 WO2023157442A1 (ja) 2022-02-16 2022-12-13 エッチング方法

Publications (1)

Publication Number Publication Date
KR20240148842A true KR20240148842A (ko) 2024-10-11

Family

ID=87577938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247027142A Pending KR20240148842A (ko) 2022-02-16 2022-12-13 에칭 방법

Country Status (7)

Country Link
US (1) US20250154409A1 (https=)
EP (1) EP4481795A4 (https=)
JP (1) JPWO2023157442A1 (https=)
KR (1) KR20240148842A (https=)
CN (1) CN118679553A (https=)
TW (1) TWI861644B (https=)
WO (1) WO2023157442A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025254704A1 (en) * 2024-06-04 2025-12-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cryogenic etching using carbon oxy halides
WO2026075112A1 (ja) * 2024-10-02 2026-04-09 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法及びエッチング装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US153771A (en) 1874-08-04 Improvement in sash-holders

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3013446B2 (ja) * 1990-12-28 2000-02-28 ソニー株式会社 ドライエッチング方法
WO2001027987A1 (fr) * 1999-10-13 2001-04-19 Daikin Industries, Ltd. Gaz de gravure a sec
KR100796067B1 (ko) * 2006-05-09 2008-01-21 울산화학주식회사 반도체 제조용 건식 에칭 개스 및 그의 제조방법
JPWO2014129488A1 (ja) * 2013-02-21 2017-02-02 日本ゼオン株式会社 高純度１ｈ−ヘプタフルオロシクロペンテン
JP6896522B2 (ja) * 2017-06-27 2021-06-30 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード エッチング方法およびプラズマエッチング用材料
US10529581B2 (en) * 2017-12-29 2020-01-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications
TWI886105B (zh) * 2018-10-26 2025-06-11 日商關東電化工業股份有限公司 含有含硫氟碳化合物之乾蝕刻氣體組成物及使用其之乾蝕刻方法
TWI808274B (zh) * 2018-10-26 2023-07-11 日商關東電化工業股份有限公司 含有具有不飽和鍵之含硫氟碳化合物的乾式蝕刻氣體組成物及使用其之乾式蝕刻方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US153771A (en) 1874-08-04 Improvement in sash-holders

Also Published As

Publication number Publication date
TW202347491A (zh) 2023-12-01
US20250154409A1 (en) 2025-05-15
WO2023157442A1 (ja) 2023-08-24
EP4481795A4 (en) 2026-02-25
EP4481795A1 (en) 2024-12-25
TWI861644B (zh) 2024-11-11
JPWO2023157442A1 (https=) 2023-08-24
CN118679553A (zh) 2024-09-20

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Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000