JPWO2023157442A1 - - Google Patents
Info
- Publication number
- JPWO2023157442A1 JPWO2023157442A1 JP2024500976A JP2024500976A JPWO2023157442A1 JP WO2023157442 A1 JPWO2023157442 A1 JP WO2023157442A1 JP 2024500976 A JP2024500976 A JP 2024500976A JP 2024500976 A JP2024500976 A JP 2024500976A JP WO2023157442 A1 JPWO2023157442 A1 JP WO2023157442A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022022024 | 2022-02-16 | ||
| PCT/JP2022/045919 WO2023157442A1 (ja) | 2022-02-16 | 2022-12-13 | エッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023157442A1 true JPWO2023157442A1 (https=) | 2023-08-24 |
| JPWO2023157442A5 JPWO2023157442A5 (https=) | 2024-10-22 |
Family
ID=87577938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024500976A Pending JPWO2023157442A1 (https=) | 2022-02-16 | 2022-12-13 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250154409A1 (https=) |
| EP (1) | EP4481795A4 (https=) |
| JP (1) | JPWO2023157442A1 (https=) |
| KR (1) | KR20240148842A (https=) |
| CN (1) | CN118679553A (https=) |
| TW (1) | TWI861644B (https=) |
| WO (1) | WO2023157442A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025254704A1 (en) * | 2024-06-04 | 2025-12-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Cryogenic etching using carbon oxy halides |
| WO2026075112A1 (ja) * | 2024-10-02 | 2026-04-09 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法及びエッチング装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US153771A (en) | 1874-08-04 | Improvement in sash-holders | ||
| JP3013446B2 (ja) * | 1990-12-28 | 2000-02-28 | ソニー株式会社 | ドライエッチング方法 |
| WO2001027987A1 (fr) * | 1999-10-13 | 2001-04-19 | Daikin Industries, Ltd. | Gaz de gravure a sec |
| KR100796067B1 (ko) * | 2006-05-09 | 2008-01-21 | 울산화학주식회사 | 반도체 제조용 건식 에칭 개스 및 그의 제조방법 |
| JPWO2014129488A1 (ja) * | 2013-02-21 | 2017-02-02 | 日本ゼオン株式会社 | 高純度１ｈ−ヘプタフルオロシクロペンテン |
| JP6896522B2 (ja) * | 2017-06-27 | 2021-06-30 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチング方法およびプラズマエッチング用材料 |
| US10529581B2 (en) * | 2017-12-29 | 2020-01-07 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications |
| TWI886105B (zh) * | 2018-10-26 | 2025-06-11 | 日商關東電化工業股份有限公司 | 含有含硫氟碳化合物之乾蝕刻氣體組成物及使用其之乾蝕刻方法 |
| TWI808274B (zh) * | 2018-10-26 | 2023-07-11 | 日商關東電化工業股份有限公司 | 含有具有不飽和鍵之含硫氟碳化合物的乾式蝕刻氣體組成物及使用其之乾式蝕刻方法 |
-
2022
- 2022-12-13 KR KR1020247027142A patent/KR20240148842A/ko active Pending
- 2022-12-13 EP EP22927328.9A patent/EP4481795A4/en active Pending
- 2022-12-13 CN CN202280091493.7A patent/CN118679553A/zh active Pending
- 2022-12-13 US US18/839,049 patent/US20250154409A1/en active Pending
- 2022-12-13 JP JP2024500976A patent/JPWO2023157442A1/ja active Pending
- 2022-12-13 WO PCT/JP2022/045919 patent/WO2023157442A1/ja not_active Ceased
- 2022-12-26 TW TW111149911A patent/TWI861644B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW202347491A (zh) | 2023-12-01 |
| US20250154409A1 (en) | 2025-05-15 |
| WO2023157442A1 (ja) | 2023-08-24 |
| EP4481795A4 (en) | 2026-02-25 |
| EP4481795A1 (en) | 2024-12-25 |
| TWI861644B (zh) | 2024-11-11 |
| CN118679553A (zh) | 2024-09-20 |
| KR20240148842A (ko) | 2024-10-11 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240708 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251016 |