JPWO2023157442A5 - - Google Patents
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- Publication number
- JPWO2023157442A5 JPWO2023157442A5 JP2024500976A JP2024500976A JPWO2023157442A5 JP WO2023157442 A5 JPWO2023157442 A5 JP WO2023157442A5 JP 2024500976 A JP2024500976 A JP 2024500976A JP 2024500976 A JP2024500976 A JP 2024500976A JP WO2023157442 A5 JPWO2023157442 A5 JP WO2023157442A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- carbon atoms
- compound
- atom
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022022024 | 2022-02-16 | ||
| PCT/JP2022/045919 WO2023157442A1 (ja) | 2022-02-16 | 2022-12-13 | エッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023157442A1 JPWO2023157442A1 (https=) | 2023-08-24 |
| JPWO2023157442A5 true JPWO2023157442A5 (https=) | 2024-10-22 |
Family
ID=87577938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024500976A Pending JPWO2023157442A1 (https=) | 2022-02-16 | 2022-12-13 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250154409A1 (https=) |
| EP (1) | EP4481795A4 (https=) |
| JP (1) | JPWO2023157442A1 (https=) |
| KR (1) | KR20240148842A (https=) |
| CN (1) | CN118679553A (https=) |
| TW (1) | TWI861644B (https=) |
| WO (1) | WO2023157442A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025254704A1 (en) * | 2024-06-04 | 2025-12-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Cryogenic etching using carbon oxy halides |
| WO2026075112A1 (ja) * | 2024-10-02 | 2026-04-09 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法及びエッチング装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US153771A (en) | 1874-08-04 | Improvement in sash-holders | ||
| JP3013446B2 (ja) * | 1990-12-28 | 2000-02-28 | ソニー株式会社 | ドライエッチング方法 |
| WO2001027987A1 (fr) * | 1999-10-13 | 2001-04-19 | Daikin Industries, Ltd. | Gaz de gravure a sec |
| KR100796067B1 (ko) * | 2006-05-09 | 2008-01-21 | 울산화학주식회사 | 반도체 제조용 건식 에칭 개스 및 그의 제조방법 |
| JPWO2014129488A1 (ja) * | 2013-02-21 | 2017-02-02 | 日本ゼオン株式会社 | 高純度１ｈ−ヘプタフルオロシクロペンテン |
| JP6896522B2 (ja) * | 2017-06-27 | 2021-06-30 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチング方法およびプラズマエッチング用材料 |
| US10529581B2 (en) * | 2017-12-29 | 2020-01-07 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications |
| TWI886105B (zh) * | 2018-10-26 | 2025-06-11 | 日商關東電化工業股份有限公司 | 含有含硫氟碳化合物之乾蝕刻氣體組成物及使用其之乾蝕刻方法 |
| TWI808274B (zh) * | 2018-10-26 | 2023-07-11 | 日商關東電化工業股份有限公司 | 含有具有不飽和鍵之含硫氟碳化合物的乾式蝕刻氣體組成物及使用其之乾式蝕刻方法 |
-
2022
- 2022-12-13 KR KR1020247027142A patent/KR20240148842A/ko active Pending
- 2022-12-13 EP EP22927328.9A patent/EP4481795A4/en active Pending
- 2022-12-13 CN CN202280091493.7A patent/CN118679553A/zh active Pending
- 2022-12-13 US US18/839,049 patent/US20250154409A1/en active Pending
- 2022-12-13 JP JP2024500976A patent/JPWO2023157442A1/ja active Pending
- 2022-12-13 WO PCT/JP2022/045919 patent/WO2023157442A1/ja not_active Ceased
- 2022-12-26 TW TW111149911A patent/TWI861644B/zh active
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