CN118679553A - 蚀刻方法 - Google Patents

蚀刻方法 Download PDF

Info

Publication number
CN118679553A
CN118679553A CN202280091493.7A CN202280091493A CN118679553A CN 118679553 A CN118679553 A CN 118679553A CN 202280091493 A CN202280091493 A CN 202280091493A CN 118679553 A CN118679553 A CN 118679553A
Authority
CN
China
Prior art keywords
etching
compound
gas
carbon atoms
boiling point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280091493.7A
Other languages
English (en)
Chinese (zh)
Inventor
铃木淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Publication of CN118679553A publication Critical patent/CN118679553A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
CN202280091493.7A 2022-02-16 2022-12-13 蚀刻方法 Pending CN118679553A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022022024 2022-02-16
JP2022-022024 2022-02-16
PCT/JP2022/045919 WO2023157442A1 (ja) 2022-02-16 2022-12-13 エッチング方法

Publications (1)

Publication Number Publication Date
CN118679553A true CN118679553A (zh) 2024-09-20

Family

ID=87577938

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280091493.7A Pending CN118679553A (zh) 2022-02-16 2022-12-13 蚀刻方法

Country Status (7)

Country Link
US (1) US20250154409A1 (https=)
EP (1) EP4481795A4 (https=)
JP (1) JPWO2023157442A1 (https=)
KR (1) KR20240148842A (https=)
CN (1) CN118679553A (https=)
TW (1) TWI861644B (https=)
WO (1) WO2023157442A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025254704A1 (en) * 2024-06-04 2025-12-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cryogenic etching using carbon oxy halides
WO2026075112A1 (ja) * 2024-10-02 2026-04-09 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法及びエッチング装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US153771A (en) 1874-08-04 Improvement in sash-holders
JP3013446B2 (ja) * 1990-12-28 2000-02-28 ソニー株式会社 ドライエッチング方法
WO2001027987A1 (fr) * 1999-10-13 2001-04-19 Daikin Industries, Ltd. Gaz de gravure a sec
KR100796067B1 (ko) * 2006-05-09 2008-01-21 울산화학주식회사 반도체 제조용 건식 에칭 개스 및 그의 제조방법
JPWO2014129488A1 (ja) * 2013-02-21 2017-02-02 日本ゼオン株式会社 高純度１ｈ−ヘプタフルオロシクロペンテン
JP6896522B2 (ja) * 2017-06-27 2021-06-30 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード エッチング方法およびプラズマエッチング用材料
US10529581B2 (en) * 2017-12-29 2020-01-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications
TWI886105B (zh) * 2018-10-26 2025-06-11 日商關東電化工業股份有限公司 含有含硫氟碳化合物之乾蝕刻氣體組成物及使用其之乾蝕刻方法
TWI808274B (zh) * 2018-10-26 2023-07-11 日商關東電化工業股份有限公司 含有具有不飽和鍵之含硫氟碳化合物的乾式蝕刻氣體組成物及使用其之乾式蝕刻方法

Also Published As

Publication number Publication date
TW202347491A (zh) 2023-12-01
US20250154409A1 (en) 2025-05-15
WO2023157442A1 (ja) 2023-08-24
EP4481795A4 (en) 2026-02-25
EP4481795A1 (en) 2024-12-25
TWI861644B (zh) 2024-11-11
JPWO2023157442A1 (https=) 2023-08-24
KR20240148842A (ko) 2024-10-11

Similar Documents

Publication Publication Date Title
KR102398461B1 (ko) 다중 적층을 에칭하기 위한 화학물질
CN107924837B (zh) 干式蚀刻方法
US9728422B2 (en) Dry etching method
TWI631618B (zh) Dry etching method, dry etchant, and method of manufacturing semiconductor device
JP6544215B2 (ja) ドライエッチング方法
JP7445150B2 (ja) ドライエッチング方法及び半導体デバイスの製造方法
TWI532097B (zh) 蝕刻氣體及蝕刻方法
TWI861644B (zh) 蝕刻方法
CN118679554A (zh) 蚀刻方法
TW202407760A (zh) 蝕刻方法
TW202407801A (zh) 蝕刻方法
TWI819443B (zh) 金屬氧化物之圖案形成方法及半導體元件之製造方法
CN121014100A (zh) 蚀刻方法
WO2025199459A1 (en) Hydrofluorocarbon compounds and their use integrated circuit manufacturing processes
WO2025254850A1 (en) Cryogenic etching using sof2 and its family

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination