KR20240141296A - 패턴의 검사 방법, 레지스트 패턴의 제조 방법, 대상 기판의 선별 방법, 및 대상 기판의 제조 방법 - Google Patents

패턴의 검사 방법, 레지스트 패턴의 제조 방법, 대상 기판의 선별 방법, 및 대상 기판의 제조 방법 Download PDF

Info

Publication number
KR20240141296A
KR20240141296A KR1020247028610A KR20247028610A KR20240141296A KR 20240141296 A KR20240141296 A KR 20240141296A KR 1020247028610 A KR1020247028610 A KR 1020247028610A KR 20247028610 A KR20247028610 A KR 20247028610A KR 20240141296 A KR20240141296 A KR 20240141296A
Authority
KR
South Korea
Prior art keywords
pattern
target substrate
resist pattern
coordinates
outline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247028610A
Other languages
English (en)
Korean (ko)
Inventor
데츠야 가토
겐스케 요시하라
요스케 가구치
나츠키 도다
마사카즈 구메
히로시 오노
Original Assignee
가부시끼가이샤 레조낙
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 레조낙 filed Critical 가부시끼가이샤 레조낙
Publication of KR20240141296A publication Critical patent/KR20240141296A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H01L21/4857—
    • H01L22/20—
    • H01L23/5383—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6456—Spatial resolved fluorescence measurements; Imaging
    • G01N2021/646—Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020247028610A 2022-02-28 2023-02-20 패턴의 검사 방법, 레지스트 패턴의 제조 방법, 대상 기판의 선별 방법, 및 대상 기판의 제조 방법 Pending KR20240141296A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2022/008187 WO2023162194A1 (ja) 2022-02-28 2022-02-28 パターンの検査方法、レジストパターンの製造方法、半導体パッケージ基板の選別方法、及び半導体パッケージ基板の製造方法
JPPCT/JP2022/008187 2022-02-28
PCT/JP2023/006062 WO2023162934A1 (ja) 2022-02-28 2023-02-20 パターンの検査方法、レジストパターンの製造方法、対象基板の選別方法、及び対象基板の製造方法

Publications (1)

Publication Number Publication Date
KR20240141296A true KR20240141296A (ko) 2024-09-26

Family

ID=87765202

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247028610A Pending KR20240141296A (ko) 2022-02-28 2023-02-20 패턴의 검사 방법, 레지스트 패턴의 제조 방법, 대상 기판의 선별 방법, 및 대상 기판의 제조 방법

Country Status (6)

Country Link
US (1) US20250191978A1 (https=)
JP (1) JP7758148B2 (https=)
KR (1) KR20240141296A (https=)
CN (1) CN119096337A (https=)
TW (1) TW202349528A (https=)
WO (2) WO2023162194A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004251743A (ja) 2003-02-20 2004-09-09 Hitachi Ltd パターン検査方法
JP2005207802A (ja) 2004-01-21 2005-08-04 Toshiba Corp レジストパターン検査方法及びその検査装置
JP2006215020A (ja) 2005-01-04 2006-08-17 Hitachi High-Technologies Corp 高精度パターン形状評価方法及びその装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152402A (ja) * 1991-12-02 1993-06-18 Fujitsu Ltd レジストパターン寸法測定方法
JP3375732B2 (ja) * 1994-06-07 2003-02-10 株式会社日立製作所 薄膜配線の形成方法
JP3322521B2 (ja) * 1995-05-15 2002-09-09 松下電工株式会社 プリント基板のパターン検査方法及び装置及びプリント基板の製造方法
JP2000193596A (ja) * 1998-12-24 2000-07-14 Toshiba Corp 検査方法
JP2002277409A (ja) 2001-03-15 2002-09-25 Olympus Optical Co Ltd プリント基板パターンの検査装置
JP2007078894A (ja) 2005-09-12 2007-03-29 Fujifilm Corp 感光性組成物、パターン形成材料、感光性積層体、並びにパターン形成装置及びパターン形成方法
JP4903469B2 (ja) 2006-03-28 2012-03-28 富士通セミコンダクター株式会社 欠陥検出方法
WO2013069100A1 (ja) 2011-11-08 2013-05-16 株式会社メガトレード プリント基板の検査装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004251743A (ja) 2003-02-20 2004-09-09 Hitachi Ltd パターン検査方法
JP2005207802A (ja) 2004-01-21 2005-08-04 Toshiba Corp レジストパターン検査方法及びその検査装置
JP2006215020A (ja) 2005-01-04 2006-08-17 Hitachi High-Technologies Corp 高精度パターン形状評価方法及びその装置

Also Published As

Publication number Publication date
JP7758148B2 (ja) 2025-10-22
JPWO2023162934A1 (https=) 2023-08-31
CN119096337A (zh) 2024-12-06
WO2023162194A1 (ja) 2023-08-31
TW202349528A (zh) 2023-12-16
WO2023162934A1 (ja) 2023-08-31
US20250191978A1 (en) 2025-06-12

Similar Documents

Publication Publication Date Title
US5451479A (en) Method of forming a pattern of a multilayer type semiconductor device
CN117111398B (zh) 光罩制程偏差的监控方法及监控系统
JP4583317B2 (ja) フォトレジストの欠陥を検査および修復する方法、並びにプリント回路基板の製造プロセス
JP7758148B2 (ja) パターンの検査方法、レジストパターンの製造方法、対象基板の選別方法、及び対象基板の製造方法
US7476473B2 (en) Process control method, a method for forming monitor marks, a mask for process control, and a semiconductor device manufacturing method
CN1208692C (zh) 微影制程的焦距检测方法
CN117524853A (zh) 光刻胶图案化方法、显示面板及显示装置
KR102938112B1 (ko) 레지스트 패턴의 검사 방법, 레지스트 패턴의 제조 방법, 기판 선별 방법, 및 프린트 배선판의 제조 방법
KR102938120B1 (ko) 검사 방법 및 시스템, 및 이를 이용한 반도체 소자의 제조 방법
CN1770419A (zh) 用于曝光机器的检测装置及检测方法
CN119862846B (zh) Lcd光电板外层线路图形生成及精度单点补偿方法
KR20250040968A (ko) 레지스트 패턴의 검사 방법, 레지스트 패턴의 제조 방법, 기판 선별 방법, 및, 반도체 패키지 기판 또는 프린트 배선판의 제조 방법
US12481224B2 (en) Method and system for overlay measurement
WO2024024484A1 (ja) レジストパターンの検査方法、レジストパターンの製造方法、基板選別方法、及び、半導体パッケージ基板又はプリント配線板の製造方法
KR20030000990A (ko) 반도체 기판의 오버레이 측정방법
KR100807520B1 (ko) 노광 장비의 ｃｄ 및 오버래이 정밀도 측정 방법
KR100280536B1 (ko) 반도체 포토공정의 오버레이 검사 방법
KR100255087B1 (ko) 더미셀이 형성된 스테퍼용 레티클
KR20090076117A (ko) 기판 원소재의 결함 검사 방법
JPH02159012A (ja) マスク基板
KR20050009029A (ko) 반도체 기판의 노광방법
Zemel et al. XY Scaling Compensation Technology for Fine-Line PCB Imaging with High-Precision Alignment
JP2001291658A (ja) フォーカス異常検査装置およびフォーカス異常検査方法
KR19990003154A (ko) 반도체 소자의 중첩도 측정 방법
KR20010108541A (ko) 반도체 공정에서의 오버레이 패턴 측정 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000