KR20240140161A - 이중 반도체-온-절연체 구조물을 제조하기 위한 공정 - Google Patents
이중 반도체-온-절연체 구조물을 제조하기 위한 공정 Download PDFInfo
- Publication number
- KR20240140161A KR20240140161A KR1020247029259A KR20247029259A KR20240140161A KR 20240140161 A KR20240140161 A KR 20240140161A KR 1020247029259 A KR1020247029259 A KR 1020247029259A KR 20247029259 A KR20247029259 A KR 20247029259A KR 20240140161 A KR20240140161 A KR 20240140161A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- substrate
- donor substrate
- electrical insulating
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H01L21/76254—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
- H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
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- H01L21/0223—
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- H01L21/3212—
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- H01L21/324—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Element Separation (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2200850A FR3132383A1 (fr) | 2022-01-31 | 2022-01-31 | Procédé de fabrication d’une structure de type double semi-conducteur sur isolant |
| FRFR2200850 | 2022-01-31 | ||
| PCT/FR2023/050115 WO2023144495A1 (fr) | 2022-01-31 | 2023-01-30 | Procede de fabrication d'une structure de type double semi-conducteur sur isolant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240140161A true KR20240140161A (ko) | 2024-09-24 |
Family
ID=80999171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247029259A Pending KR20240140161A (ko) | 2022-01-31 | 2023-01-30 | 이중 반도체-온-절연체 구조물을 제조하기 위한 공정 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20250140600A1 (https=) |
| EP (1) | EP4473559B1 (https=) |
| JP (1) | JP2025504526A (https=) |
| KR (1) | KR20240140161A (https=) |
| CN (1) | CN118613903A (https=) |
| FR (1) | FR3132383A1 (https=) |
| TW (1) | TW202347608A (https=) |
| WO (1) | WO2023144495A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117594522A (zh) * | 2023-12-25 | 2024-02-23 | 中国科学院微电子研究所 | 一种新型绝缘体上硅晶圆及其制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3395661B2 (ja) * | 1998-07-07 | 2003-04-14 | 信越半導体株式会社 | Soiウエーハの製造方法 |
| JP3975634B2 (ja) * | 2000-01-25 | 2007-09-12 | 信越半導体株式会社 | 半導体ウェハの製作法 |
| US7160753B2 (en) * | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
| FR2952224B1 (fr) * | 2009-10-30 | 2012-04-20 | Soitec Silicon On Insulator | Procede de controle de la repartition des contraintes dans une structure de type semi-conducteur sur isolant et structure correspondante. |
-
2022
- 2022-01-31 FR FR2200850A patent/FR3132383A1/fr active Pending
-
2023
- 2023-01-30 TW TW112103176A patent/TW202347608A/zh unknown
- 2023-01-30 CN CN202380019045.0A patent/CN118613903A/zh active Pending
- 2023-01-30 WO PCT/FR2023/050115 patent/WO2023144495A1/fr not_active Ceased
- 2023-01-30 EP EP23706411.8A patent/EP4473559B1/fr active Active
- 2023-01-30 US US18/834,482 patent/US20250140600A1/en active Pending
- 2023-01-30 KR KR1020247029259A patent/KR20240140161A/ko active Pending
- 2023-01-30 JP JP2024543909A patent/JP2025504526A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025504526A (ja) | 2025-02-12 |
| WO2023144495A1 (fr) | 2023-08-03 |
| EP4473559B1 (fr) | 2026-03-18 |
| CN118613903A (zh) | 2024-09-06 |
| EP4473559A1 (fr) | 2024-12-11 |
| TW202347608A (zh) | 2023-12-01 |
| FR3132383A1 (fr) | 2023-08-04 |
| US20250140600A1 (en) | 2025-05-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |