KR20240055724A - 다층 반사막 구비 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

다층 반사막 구비 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20240055724A
KR20240055724A KR1020247003753A KR20247003753A KR20240055724A KR 20240055724 A KR20240055724 A KR 20240055724A KR 1020247003753 A KR1020247003753 A KR 1020247003753A KR 20247003753 A KR20247003753 A KR 20247003753A KR 20240055724 A KR20240055724 A KR 20240055724A
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KR
South Korea
Prior art keywords
film
refractive index
multilayer reflective
index layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247003753A
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English (en)
Korean (ko)
Inventor
마사노리 나까가와
데이이찌로 우메자와
요헤이 이께베
Original Assignee
호야 가부시키가이샤
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Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20240055724A publication Critical patent/KR20240055724A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020247003753A 2021-09-07 2022-09-02 다층 반사막 구비 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Pending KR20240055724A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-145749 2021-09-07
JP2021145749 2021-09-07
PCT/JP2022/033127 WO2023037980A1 (ja) 2021-09-07 2022-09-02 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20240055724A true KR20240055724A (ko) 2024-04-29

Family

ID=85507564

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247003753A Pending KR20240055724A (ko) 2021-09-07 2022-09-02 다층 반사막 구비 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US20250370324A1 (https=)
JP (1) JPWO2023037980A1 (https=)
KR (1) KR20240055724A (https=)
TW (1) TW202321815A (https=)
WO (1) WO2023037980A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025027982A (ja) * 2023-08-16 2025-02-28 信越化学工業株式会社 反射型マスクブランク、及び反射型マスクの製造方法
WO2025142825A1 (ja) * 2023-12-27 2025-07-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02242201A (ja) 1989-03-16 1990-09-26 Canon Inc 軟ｘ線・真空紫外線用多層膜反射鏡
JPH05203798A (ja) 1992-01-23 1993-08-10 Nippon Telegr & Teleph Corp <Ntt> 多層膜分光反射鏡
JPH09230098A (ja) 1996-02-21 1997-09-05 Nippon Telegr & Teleph Corp <Ntt> 多層膜ｘ線反射鏡
JP2021110953A (ja) 2020-01-08 2021-08-02 エスアンドエス テック カンパニー リミテッド 極紫外線用反射型ブランクマスク及びフォトマスク

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4692984B2 (ja) * 2004-09-24 2011-06-01 Ｈｏｙａ株式会社 反射型マスクブランク、反射型マスク及び多層膜反射鏡並びにこれらの製造方法
JP2006173446A (ja) * 2004-12-17 2006-06-29 Nikon Corp 極端紫外線用の光学素子及びこれを用いた投影露光装置
JP6044213B2 (ja) * 2012-09-13 2016-12-14 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板およびその製造方法
JP7379027B2 (ja) * 2019-09-04 2023-11-14 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02242201A (ja) 1989-03-16 1990-09-26 Canon Inc 軟ｘ線・真空紫外線用多層膜反射鏡
JPH05203798A (ja) 1992-01-23 1993-08-10 Nippon Telegr & Teleph Corp <Ntt> 多層膜分光反射鏡
JPH09230098A (ja) 1996-02-21 1997-09-05 Nippon Telegr & Teleph Corp <Ntt> 多層膜ｘ線反射鏡
JP2021110953A (ja) 2020-01-08 2021-08-02 エスアンドエス テック カンパニー リミテッド 極紫外線用反射型ブランクマスク及びフォトマスク

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Overt Wood et al. "Improved Ru/Si multilayer reflective coatings for advanced extreme-ultraviolet lithography photomasks". Proc. SPIE 9776, Extreme Ultraviolet(EUV) Lithography VII, 977619(18 March 2016)

Also Published As

Publication number Publication date
US20250370324A1 (en) 2025-12-04
WO2023037980A1 (ja) 2023-03-16
TW202321815A (zh) 2023-06-01
JPWO2023037980A1 (https=) 2023-03-16

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