KR20240053652A - Iii족 질화물 발광 디바이스, iii족 질화물 에피택셜 웨이퍼, iii족 질화물 발광 디바이스를 제작하는 방법 - Google Patents

Iii족 질화물 발광 디바이스, iii족 질화물 에피택셜 웨이퍼, iii족 질화물 발광 디바이스를 제작하는 방법 Download PDF

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KR20240053652A
KR20240053652A KR1020247011757A KR20247011757A KR20240053652A KR 20240053652 A KR20240053652 A KR 20240053652A KR 1020247011757 A KR1020247011757 A KR 1020247011757A KR 20247011757 A KR20247011757 A KR 20247011757A KR 20240053652 A KR20240053652 A KR 20240053652A
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layer
group iii
iii nitride
nitride semiconductor
semiconductor layer
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Korean (ko)
Inventor
켄지로 우에스기
히데토 미야케
타카오 나카무라
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고쿠리츠다이가쿠호진 미에다이가쿠
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Publication of KR20240053652A publication Critical patent/KR20240053652A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H01L33/32—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H01L21/2015—
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
KR1020247011757A 2021-09-09 2022-09-09 Iii족 질화물 발광 디바이스, iii족 질화물 에피택셜 웨이퍼, iii족 질화물 발광 디바이스를 제작하는 방법 Pending KR20240053652A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021147191 2021-09-09
JPJP-P-2021-147191 2021-09-09
PCT/JP2022/033975 WO2023038129A1 (ja) 2021-09-09 2022-09-09 Ｉｉｉ族窒化物発光デバイス、ｉｉｉ族窒化物エピタキシャルウエハ、ｉｉｉ族窒化物発光デバイスを作製する方法

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KR20240053652A true KR20240053652A (ko) 2024-04-24

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US (1) US20240379906A1 (https=)
EP (1) EP4401158A4 (https=)
JP (1) JPWO2023038129A1 (https=)
KR (1) KR20240053652A (https=)
CN (1) CN117916901A (https=)
WO (1) WO2023038129A1 (https=)

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Publication number Priority date Publication date Assignee Title
EP4723177A1 (en) * 2023-06-01 2026-04-08 Mie University Group iii nitride light-emitting device

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2010161311A (ja) 2009-01-09 2010-07-22 Dowa Electronics Materials Co Ltd 窒化物半導体発光素子およびその製造方法
JP2012089754A (ja) 2010-10-21 2012-05-10 Uv Craftory Co Ltd 窒化物半導体紫外線発光素子
JP2017055116A (ja) 2015-09-11 2017-03-16 国立大学法人三重大学 窒化物半導体基板の製造方法、窒化物半導体基板およびその加熱装置
JP2018156970A (ja) 2017-03-15 2018-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2019033284A (ja) 2018-11-01 2019-02-28 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

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JP5777196B2 (ja) * 2009-04-22 2015-09-09 パナソニック株式会社 窒化物半導体発光素子の製造方法
KR20130022719A (ko) * 2011-08-26 2013-03-07 엘지이노텍 주식회사 반도체 소자
US20130082274A1 (en) * 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9252329B2 (en) * 2011-10-04 2016-02-02 Palo Alto Research Center Incorporated Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
JP6092961B2 (ja) * 2015-07-30 2017-03-08 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US9680056B1 (en) * 2016-07-08 2017-06-13 Bolb Inc. Ultraviolet light-emitting device with a heavily doped strain-management interlayer
US10135227B1 (en) * 2017-05-19 2018-11-20 Palo Alto Research Center Incorporated Electron beam pumped non-c-plane UV emitters
US10276746B1 (en) * 2017-10-18 2019-04-30 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
JP2021034509A (ja) * 2019-08-22 2021-03-01 旭化成株式会社 紫外線発光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010161311A (ja) 2009-01-09 2010-07-22 Dowa Electronics Materials Co Ltd 窒化物半導体発光素子およびその製造方法
JP2012089754A (ja) 2010-10-21 2012-05-10 Uv Craftory Co Ltd 窒化物半導体紫外線発光素子
JP2017055116A (ja) 2015-09-11 2017-03-16 国立大学法人三重大学 窒化物半導体基板の製造方法、窒化物半導体基板およびその加熱装置
JP2018156970A (ja) 2017-03-15 2018-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2019033284A (ja) 2018-11-01 2019-02-28 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

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EP4401158A4 (en) 2025-11-12
WO2023038129A1 (ja) 2023-03-16
JPWO2023038129A1 (https=) 2023-03-16
US20240379906A1 (en) 2024-11-14
EP4401158A1 (en) 2024-07-17
CN117916901A (zh) 2024-04-19

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