KR20240033185A - 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 - Google Patents
촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 Download PDFInfo
- Publication number
- KR20240033185A KR20240033185A KR1020247007201A KR20247007201A KR20240033185A KR 20240033185 A KR20240033185 A KR 20240033185A KR 1020247007201 A KR1020247007201 A KR 1020247007201A KR 20247007201 A KR20247007201 A KR 20247007201A KR 20240033185 A KR20240033185 A KR 20240033185A
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- South Korea
- Prior art keywords
- derivatives
- imaging device
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- photoelectric conversion
- electrode
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H01L27/1462—
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- H01L27/14643—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016227291A JP6834400B2 (ja) | 2016-11-22 | 2016-11-22 | 撮像素子、積層型撮像素子、撮像装置及び電子装置 |
| JPJP-P-2016-227291 | 2016-11-22 | ||
| PCT/JP2017/041394 WO2018097046A1 (en) | 2016-11-22 | 2017-11-17 | Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus |
| KR1020197013457A KR102645210B1 (ko) | 2016-11-22 | 2017-11-17 | 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197013457A Division KR102645210B1 (ko) | 2016-11-22 | 2017-11-17 | 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240033185A true KR20240033185A (ko) | 2024-03-12 |
Family
ID=60574677
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247007201A Ceased KR20240033185A (ko) | 2016-11-22 | 2017-11-17 | 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 |
| KR1020197013457A Active KR102645210B1 (ko) | 2016-11-22 | 2017-11-17 | 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197013457A Active KR102645210B1 (ko) | 2016-11-22 | 2017-11-17 | 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US10886335B2 (enExample) |
| JP (1) | JP6834400B2 (enExample) |
| KR (2) | KR20240033185A (enExample) |
| CN (4) | CN117202753A (enExample) |
| WO (1) | WO2018097046A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7007088B2 (ja) * | 2016-12-07 | 2022-01-24 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、撮像素子および電子機器 |
| US20210114988A1 (en) * | 2018-07-09 | 2021-04-22 | Sony Corporation | Photoelectric conversion element |
| CN112673483B (zh) * | 2019-04-10 | 2024-03-22 | 松下知识产权经营株式会社 | 摄像装置 |
| KR20220002858A (ko) | 2019-04-22 | 2022-01-07 | 호도가야 가가쿠 고교 가부시키가이샤 | 인데노카르바졸 고리를 갖는 화합물로 이루어지는 유기 박막을 구비하는 광전 변환 소자 |
| JP7663316B2 (ja) * | 2019-09-09 | 2025-04-16 | キヤノン株式会社 | 半導体装置 |
| KR102876927B1 (ko) * | 2019-11-06 | 2025-10-24 | 삼성전자주식회사 | 광전 변환 소자, 센서 및 전자 장치 |
| KR20210092367A (ko) | 2020-01-15 | 2021-07-26 | 삼성디스플레이 주식회사 | 유기 전계 발광 소자 및 유기 전계 발광 소자용 아민 화합물 |
| DE112021000744T5 (de) * | 2020-01-29 | 2022-11-03 | Sony Group Corporation | Bildaufnahmeelement und bildaufnahmevorrichtung |
| JP7516094B2 (ja) * | 2020-04-07 | 2024-07-16 | キヤノン株式会社 | 光電変換素子 |
| CN111933805B (zh) * | 2020-09-04 | 2025-01-21 | 天津理工大学 | 一种亚酞菁衍生物的异质结型绿光探测器的制备方法 |
| JP7711082B2 (ja) | 2020-10-01 | 2025-07-22 | 保土谷化学工業株式会社 | 光電変換素子に用いる有機薄膜、及びその光電変換素子 |
| TWI915452B (zh) * | 2020-11-27 | 2026-02-21 | 日商日鐵化學材料股份有限公司 | 攝像用的光電轉換元件材料及光電轉換元件 |
| TWI899379B (zh) | 2020-11-27 | 2025-10-01 | 日商日鐵化學材料股份有限公司 | 攝像用光電轉換元件 |
| JP7791700B2 (ja) | 2020-12-23 | 2025-12-24 | 保土谷化学工業株式会社 | インドロカルバゾール環を有する化合物、受光素子用材料、有機薄膜、受光素子、及び撮像素子 |
| JP2022108268A (ja) | 2021-01-12 | 2022-07-25 | 保土谷化学工業株式会社 | 光電変換素子に用いる有機薄膜、及びその光電変換素子 |
| JP7785551B2 (ja) | 2021-01-28 | 2025-12-15 | 保土谷化学工業株式会社 | 光電変換素子および撮像素子 |
| KR20220115517A (ko) | 2021-02-10 | 2022-08-17 | 호도가야 가가쿠 고교 가부시키가이샤 | 디카르바졸을 갖는 광전 변환 소자용 재료, 유기 박막, 광전 변환 소자 및 촬상 소자 |
| KR20240035756A (ko) | 2021-07-15 | 2024-03-18 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 촬상용 광전 변환 소자용 재료 |
| CN117598045A (zh) | 2021-07-15 | 2024-02-23 | 日铁化学材料株式会社 | 摄像用的光电转换元件用材料及摄像用光电转换元件 |
| JP2023050149A (ja) * | 2021-09-29 | 2023-04-10 | 保土谷化学工業株式会社 | 光電変換素子に用いる有機薄膜 |
| CN118104414A (zh) * | 2021-10-26 | 2024-05-28 | 松下知识产权经营株式会社 | 摄像装置 |
| TW202402758A (zh) | 2022-05-25 | 2024-01-16 | 日商日鐵化學材料股份有限公司 | 攝像用的光電轉換元件用材料及使用其的攝像用光電轉換元件 |
| TW202404063A (zh) | 2022-05-25 | 2024-01-16 | 日商日鐵化學材料股份有限公司 | 攝像用的光電轉換元件用材料及光電轉換元件 |
| KR20250069556A (ko) | 2022-09-14 | 2025-05-19 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 광전 변환 소자용 재료 및 이것을 사용한 광전 변환 소자 |
| CN119894903A (zh) | 2022-09-22 | 2025-04-25 | 保土谷化学工业株式会社 | 化合物、有机薄膜及光电转换元件 |
| JPWO2024135588A1 (enExample) | 2022-12-23 | 2024-06-27 | ||
| JP2024127793A (ja) | 2023-03-08 | 2024-09-20 | 保土谷化学工業株式会社 | 受光素子用有機薄膜、およびそれを用いた受光素子 |
| JPWO2025018226A1 (enExample) | 2023-07-14 | 2025-01-23 | ||
| JPWO2025018227A1 (enExample) | 2023-07-14 | 2025-01-23 | ||
| JP2025040963A (ja) | 2023-09-12 | 2025-03-25 | 保土谷化学工業株式会社 | 縮合多環構造を有する化合物、受光素子用有機薄膜、および受光素子 |
| CN117596908B (zh) * | 2024-01-19 | 2024-04-05 | 武汉楚兴技术有限公司 | 一种像素单元、图像传感器及其制造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011187937A (ja) | 2010-02-09 | 2011-09-22 | Fujifilm Corp | 光電変換素子及び撮像素子並びにそれらの駆動方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5843607A (en) * | 1997-10-02 | 1998-12-01 | Xerox Corporation | Indolocarbazole photoconductors |
| JP4896318B2 (ja) * | 2001-09-10 | 2012-03-14 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2004055461A (ja) * | 2002-07-23 | 2004-02-19 | Seiko Epson Corp | 発光装置及びその製造方法、並びに電子機器 |
| JP4677314B2 (ja) | 2005-09-20 | 2011-04-27 | 富士フイルム株式会社 | センサーおよび有機光電変換素子の駆動方法 |
| WO2010041687A1 (ja) * | 2008-10-09 | 2010-04-15 | コニカミノルタホールディングス株式会社 | 有機光電変換素子、太陽電池及び光センサアレイ |
| EP2334008A1 (en) | 2009-12-10 | 2011-06-15 | Tata Consultancy Services Limited | A system and method for designing secure client-server communication protocols based on certificateless public key infrastructure |
| WO2011125020A1 (en) * | 2010-04-06 | 2011-10-13 | Basf Se | Substituted carbazole derivatives and use thereof in organic electronics |
| US9564600B2 (en) * | 2011-02-22 | 2017-02-07 | Hodogaya Chemical Co., Ltd. | Compound having an indolocarbazole ring structure and organic electroluminescent device |
| EP2726865B1 (en) | 2011-07-01 | 2016-12-14 | Cambridge Enterprise Ltd. | Methods for predicting mammalian embryo viability |
| JP5987830B2 (ja) * | 2011-08-30 | 2016-09-07 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
| TWI535726B (zh) * | 2012-09-10 | 2016-06-01 | 迪愛生股份有限公司 | 苯并噻吩苯并噻吩衍生物、有機半導體材料及有機電晶體 |
| TWI637543B (zh) * | 2012-09-21 | 2018-10-01 | 半導體能源研究所股份有限公司 | 發光元件,發光裝置,電子裝置,及照明裝置 |
| JP2014127545A (ja) | 2012-12-26 | 2014-07-07 | Sony Corp | 固体撮像素子およびこれを備えた固体撮像装置 |
| JP2015020953A (ja) * | 2013-07-17 | 2015-02-02 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | ビピリジン部位を有するインドロカルバゾール誘導体及びそれを用いた有機電界発光素子 |
| JP6010567B2 (ja) * | 2013-08-02 | 2016-10-19 | 富士フイルム株式会社 | 光電変換材料、光電変換素子、光センサおよび撮像素子 |
| JP6558243B2 (ja) * | 2014-02-05 | 2019-08-14 | 東レ株式会社 | 光電変換素子およびイメージセンサ |
| JP6541313B2 (ja) * | 2014-07-31 | 2019-07-10 | キヤノン株式会社 | 光電変換装置、及び撮像システム |
| KR102325535B1 (ko) * | 2014-08-20 | 2021-11-12 | 도레이 카부시키가이샤 | 광전 변환 소자 및 그것을 이용한 이미지 센서, 태양 전지, 단색 검지 센서 및 플렉서블 센서 |
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2016
- 2016-11-22 JP JP2016227291A patent/JP6834400B2/ja active Active
-
2017
- 2017-11-17 CN CN202311061806.7A patent/CN117202753A/zh not_active Withdrawn
- 2017-11-17 US US16/349,759 patent/US10886335B2/en active Active
- 2017-11-17 WO PCT/JP2017/041394 patent/WO2018097046A1/en not_active Ceased
- 2017-11-17 KR KR1020247007201A patent/KR20240033185A/ko not_active Ceased
- 2017-11-17 CN CN202311059948.XA patent/CN117202752A/zh not_active Withdrawn
- 2017-11-17 CN CN201780070351.1A patent/CN109952652B/zh active Active
- 2017-11-17 KR KR1020197013457A patent/KR102645210B1/ko active Active
- 2017-11-17 CN CN202311062325.8A patent/CN117202754A/zh not_active Withdrawn
-
2020
- 2020-11-12 US US17/096,515 patent/US20210134887A1/en not_active Abandoned
-
2023
- 2023-07-05 US US18/347,186 patent/US20230354627A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011187937A (ja) | 2010-02-09 | 2011-09-22 | Fujifilm Corp | 光電変換素子及び撮像素子並びにそれらの駆動方法 |
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| CN117202754A (zh) | 2023-12-08 |
| CN117202752A (zh) | 2023-12-08 |
| JP2018085427A (ja) | 2018-05-31 |
| CN109952652B (zh) | 2023-09-19 |
| US20210134887A1 (en) | 2021-05-06 |
| KR20190085922A (ko) | 2019-07-19 |
| CN109952652A (zh) | 2019-06-28 |
| US10886335B2 (en) | 2021-01-05 |
| JP6834400B2 (ja) | 2021-02-24 |
| US20230354627A1 (en) | 2023-11-02 |
| CN117202753A (zh) | 2023-12-08 |
| US20190288040A1 (en) | 2019-09-19 |
| WO2018097046A1 (en) | 2018-05-31 |
| KR102645210B1 (ko) | 2024-03-08 |
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