KR20240033157A - 최적화된 고체-상 전구체의 승화를 위한 다중 구역 가열 격실 - Google Patents
최적화된 고체-상 전구체의 승화를 위한 다중 구역 가열 격실 Download PDFInfo
- Publication number
- KR20240033157A KR20240033157A KR1020247006920A KR20247006920A KR20240033157A KR 20240033157 A KR20240033157 A KR 20240033157A KR 1020247006920 A KR1020247006920 A KR 1020247006920A KR 20247006920 A KR20247006920 A KR 20247006920A KR 20240033157 A KR20240033157 A KR 20240033157A
- Authority
- KR
- South Korea
- Prior art keywords
- heating
- compartment
- heating zone
- housing
- oven
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0011—Heating features
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Devices For Use In Laboratory Experiments (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Furnace Details (AREA)
- Treatment Of Fiber Materials (AREA)
- Drying Of Solid Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163227842P | 2021-07-30 | 2021-07-30 | |
| US63/227,842 | 2021-07-30 | ||
| PCT/US2022/074140 WO2023010001A1 (en) | 2021-07-30 | 2022-07-26 | Multiple zone heated enclosure for optimized sublimation of solid-phase precursors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240033157A true KR20240033157A (ko) | 2024-03-12 |
Family
ID=85088119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247006920A Pending KR20240033157A (ko) | 2021-07-30 | 2022-07-26 | 최적화된 고체-상 전구체의 승화를 위한 다중 구역 가열 격실 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20250106944A1 (https=) |
| EP (1) | EP4359585B1 (https=) |
| JP (1) | JP2024529516A (https=) |
| KR (1) | KR20240033157A (https=) |
| CN (1) | CN117940601A (https=) |
| IL (1) | IL310458A (https=) |
| TW (1) | TWI809995B (https=) |
| WO (1) | WO2023010001A1 (https=) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3009235A (en) | 1957-10-02 | 1961-11-21 | Internat Velcro Company | Separable fastening device |
| KR100199008B1 (ko) * | 1996-12-06 | 1999-06-15 | 정선종 | 화학기상증착형 원자층 에피택시 장치 및 화학기상증착 장치의 액체소스 증기 공급장치 |
| US6451692B1 (en) | 2000-08-18 | 2002-09-17 | Micron Technology, Inc. | Preheating of chemical vapor deposition precursors |
| US8545629B2 (en) * | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US6953047B2 (en) | 2002-01-14 | 2005-10-11 | Air Products And Chemicals, Inc. | Cabinet for chemical delivery with solvent purging |
| US8865271B2 (en) * | 2003-06-06 | 2014-10-21 | Neophotonics Corporation | High rate deposition for the formation of high quality optical coatings |
| US6909839B2 (en) | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
| KR101615913B1 (ko) * | 2014-11-12 | 2016-05-13 | 에스엔유 프리시젼 주식회사 | 박막증착장치 |
| KR20170126536A (ko) | 2016-05-09 | 2017-11-20 | 삼성디스플레이 주식회사 | 증착 장치 |
| JP6409021B2 (ja) | 2016-05-20 | 2018-10-17 | 日本エア・リキード株式会社 | 昇華ガス供給システムおよび昇華ガス供給方法 |
| US11421320B2 (en) | 2017-12-07 | 2022-08-23 | Entegris, Inc. | Chemical delivery system and method of operating the chemical delivery system |
| US11021793B2 (en) | 2018-05-31 | 2021-06-01 | L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude | Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films |
| CN109269562A (zh) * | 2018-10-11 | 2019-01-25 | 中核新能核工业工程有限责任公司 | 一种铀浓缩厂供料用加热蒸发装置 |
| KR102221960B1 (ko) * | 2019-03-25 | 2021-03-04 | 엘지전자 주식회사 | 증착 장치 |
| KR102909679B1 (ko) * | 2020-01-17 | 2026-01-08 | 삼성전자주식회사 | 조리기기 |
-
2022
- 2022-07-26 KR KR1020247006920A patent/KR20240033157A/ko active Pending
- 2022-07-26 IL IL310458A patent/IL310458A/en unknown
- 2022-07-26 US US18/293,543 patent/US20250106944A1/en active Pending
- 2022-07-26 EP EP22850471.8A patent/EP4359585B1/en active Active
- 2022-07-26 WO PCT/US2022/074140 patent/WO2023010001A1/en not_active Ceased
- 2022-07-26 CN CN202280061458.0A patent/CN117940601A/zh active Pending
- 2022-07-26 JP JP2024505584A patent/JP2024529516A/ja active Pending
- 2022-07-28 TW TW111128280A patent/TWI809995B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP4359585B1 (en) | 2025-07-02 |
| US20250106944A1 (en) | 2025-03-27 |
| CN117940601A (zh) | 2024-04-26 |
| JP2024529516A (ja) | 2024-08-06 |
| IL310458A (en) | 2024-03-01 |
| EP4359585A4 (en) | 2024-06-19 |
| EP4359585A1 (en) | 2024-05-01 |
| TWI809995B (zh) | 2023-07-21 |
| TW202305171A (zh) | 2023-02-01 |
| WO2023010001A1 (en) | 2023-02-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20240228 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20250509 Comment text: Request for Examination of Application |