KR20240016945A - 양면연마방법 및 양면연마 실리콘 웨이퍼 - Google Patents
양면연마방법 및 양면연마 실리콘 웨이퍼 Download PDFInfo
- Publication number
- KR20240016945A KR20240016945A KR1020237037430A KR20237037430A KR20240016945A KR 20240016945 A KR20240016945 A KR 20240016945A KR 1020237037430 A KR1020237037430 A KR 1020237037430A KR 20237037430 A KR20237037430 A KR 20237037430A KR 20240016945 A KR20240016945 A KR 20240016945A
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- double
- wafer
- sided
- less
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 35
- 239000002002 slurry Substances 0.000 claims abstract description 35
- 239000006061 abrasive grain Substances 0.000 claims abstract description 24
- 238000000790 scattering method Methods 0.000 claims abstract description 12
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 10
- 239000004744 fabric Substances 0.000 claims description 11
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004745 nonwoven fabric Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 68
- 230000000052 comparative effect Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 8
- 239000008119 colloidal silica Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 150000007514 bases Chemical class 0.000 description 3
- 239000002612 dispersion medium Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021092173A JP7494799B2 (ja) | 2021-06-01 | 2021-06-01 | 両面研磨方法 |
| JPJP-P-2021-092173 | 2021-06-01 | ||
| PCT/JP2022/008891 WO2022254841A1 (fr) | 2021-06-01 | 2022-03-02 | Procédé de polissage double face et tranche de silicium ayant fait l'objet d'un polissage double face |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240016945A true KR20240016945A (ko) | 2024-02-06 |
Family
ID=84324136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237037430A KR20240016945A (ko) | 2021-06-01 | 2022-03-02 | 양면연마방법 및 양면연마 실리콘 웨이퍼 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7494799B2 (fr) |
| KR (1) | KR20240016945A (fr) |
| CN (1) | CN117561143A (fr) |
| TW (1) | TW202311459A (fr) |
| WO (1) | WO2022254841A1 (fr) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016051763A (ja) | 2014-08-29 | 2016-04-11 | 株式会社Sumco | シリコンウェーハの研磨方法 |
| JP2017155242A (ja) | 2013-04-02 | 2017-09-07 | 信越化学工業株式会社 | コロイダルシリカ研磨材 |
| WO2017163942A1 (fr) | 2016-03-25 | 2017-09-28 | 株式会社フジミインコーポレーテッド | Composition de polissage pour objets à polir comportant une couche contenant un métal |
| JP2019169687A (ja) | 2018-03-26 | 2019-10-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3120825B2 (ja) * | 1994-11-14 | 2000-12-25 | 信越半導体株式会社 | エピタキシャルウエーハ及びその製造方法 |
| JP2007142455A (ja) | 2000-04-27 | 2007-06-07 | Shin Etsu Handotai Co Ltd | 半導体デバイス作製プロセス用装置 |
| CN102690607B (zh) | 2007-02-27 | 2015-02-11 | 日立化成株式会社 | 金属用研磨液及其应用 |
| JP6403324B2 (ja) | 2014-12-25 | 2018-10-10 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
| WO2018105306A1 (fr) | 2016-12-09 | 2018-06-14 | 信越半導体株式会社 | Support de dispositif de polissage double face, dispositif de polissage double face et procédé de polissage double face |
| JPWO2019043890A1 (ja) | 2017-08-31 | 2020-08-06 | 株式会社Sumco | 半導体ウェーハの製造方法 |
| JP7391589B2 (ja) | 2019-09-30 | 2023-12-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
-
2021
- 2021-06-01 JP JP2021092173A patent/JP7494799B2/ja active Active
-
2022
- 2022-03-02 KR KR1020237037430A patent/KR20240016945A/ko unknown
- 2022-03-02 WO PCT/JP2022/008891 patent/WO2022254841A1/fr active Application Filing
- 2022-03-02 CN CN202280032299.1A patent/CN117561143A/zh active Pending
- 2022-03-11 TW TW111108977A patent/TW202311459A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017155242A (ja) | 2013-04-02 | 2017-09-07 | 信越化学工業株式会社 | コロイダルシリカ研磨材 |
| JP2016051763A (ja) | 2014-08-29 | 2016-04-11 | 株式会社Sumco | シリコンウェーハの研磨方法 |
| WO2017163942A1 (fr) | 2016-03-25 | 2017-09-28 | 株式会社フジミインコーポレーテッド | Composition de polissage pour objets à polir comportant une couche contenant un métal |
| JP2019169687A (ja) | 2018-03-26 | 2019-10-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7494799B2 (ja) | 2024-06-04 |
| TW202311459A (zh) | 2023-03-16 |
| CN117561143A (zh) | 2024-02-13 |
| WO2022254841A1 (fr) | 2022-12-08 |
| JP2022184372A (ja) | 2022-12-13 |
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