JP2022184372A - 両面研磨方法及び両面研磨シリコンウェーハ - Google Patents
両面研磨方法及び両面研磨シリコンウェーハ Download PDFInfo
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- JP2022184372A JP2022184372A JP2021092173A JP2021092173A JP2022184372A JP 2022184372 A JP2022184372 A JP 2022184372A JP 2021092173 A JP2021092173 A JP 2021092173A JP 2021092173 A JP2021092173 A JP 2021092173A JP 2022184372 A JP2022184372 A JP 2022184372A
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- polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 104
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000002002 slurry Substances 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 34
- 239000006061 abrasive grain Substances 0.000 claims abstract description 24
- 238000000790 scattering method Methods 0.000 claims abstract description 12
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 10
- 239000004744 fabric Substances 0.000 claims description 10
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004745 nonwoven fabric Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 68
- 230000000052 comparative effect Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 8
- 239000008119 colloidal silica Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 150000007514 bases Chemical class 0.000 description 3
- 239000002612 dispersion medium Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
前記第1研磨後に、水溶性ポリマーを含有したスラリーを用いて15秒以下の第2研磨を前記ウェーハに対して行うことを特徴とする両面研磨方法を提供する。
前記第1研磨後に、水溶性ポリマーを含有したスラリーを用いて15秒以下の第2研磨を前記ウェーハに対して行うことを特徴とする両面研磨方法である。
本発明の両面研磨方法は、第1研磨及び第2研磨(仕上げ研磨)をこの順でウェーハに対して行う。以下、第1研磨及び第2研磨をそれぞれ説明する。
また、本発明の両面研磨方法で用いる両面研磨装置は、特に限定されない。
第1研磨では、(動的散乱法で測定した体積基準の平均粒子径)/(走査型電子顕微鏡を用いて測定した個数基準の平均実粒径)で求められる会合度が1.0未満の砥粒のスラリーを使用する。
第1研磨に供されたウェーハに対し、表裏面保護を目的として、水溶性ポリマーを含有したスラリーを用いて15秒以下の第2研磨(仕上げ研磨)を行う。
図1は、本発明の両面研磨シリコンウェーハの一例を示す概略断面図である。
比較例1~3及び実施例1では、以下の手順でスラリーA~Dをそれぞれ調製した。
両面研磨装置には4ウェイ方式の両面研磨装置である不二越機械製DSP-20Bを用いた。研磨布にはショアA硬度90の発泡ウレタンパッドを採用した。
図2の点線より上部が、AFM粗さRaが0.3nm以上の領域である。
図2に示すように、砥粒の会合度が1.0以上であるスラリーA~Cを用いた比較例1~3では、ウェーハ裏面のAFM粗さRaが2μm2当たり0.2nm以下にしかならず、0.3nm以上の裏面の粗化を達成できなかった。
Claims (3)
- (動的散乱法で測定した体積基準の平均粒子径)/(走査型電子顕微鏡を用いて測定した個数基準の平均実粒径)で求められる会合度が1.0未満の砥粒のスラリーを使用した第1研磨をウェーハに対して行い、
前記第1研磨後に、水溶性ポリマーを含有したスラリーを用いて15秒以下の第2研磨を前記ウェーハに対して行うことを特徴とする両面研磨方法。 - 前記第1研磨を、ショアA硬度70以上の発泡ウレタン系又は不織布系の研磨布を用いて行うことを特徴とする請求項1に記載の両面研磨方法。
- 裏面の2μm2当たりのAFM粗さRaが0.3nm以上のものであることを特徴とする両面研磨シリコンウェーハ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021092173A JP7494799B2 (ja) | 2021-06-01 | 両面研磨方法 | |
KR1020237037430A KR20240016945A (ko) | 2021-06-01 | 2022-03-02 | 양면연마방법 및 양면연마 실리콘 웨이퍼 |
PCT/JP2022/008891 WO2022254841A1 (ja) | 2021-06-01 | 2022-03-02 | 両面研磨方法及び両面研磨シリコンウェーハ |
CN202280032299.1A CN117561143A (zh) | 2021-06-01 | 2022-03-02 | 双面抛光方法及双面抛光硅晶圆 |
TW111108977A TW202311459A (zh) | 2021-06-01 | 2022-03-11 | 雙面研磨方法及雙面研磨矽晶圓 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021092173A JP7494799B2 (ja) | 2021-06-01 | 両面研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022184372A true JP2022184372A (ja) | 2022-12-13 |
JP7494799B2 JP7494799B2 (ja) | 2024-06-04 |
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WO2022254841A1 (ja) | 2022-12-08 |
KR20240016945A (ko) | 2024-02-06 |
CN117561143A (zh) | 2024-02-13 |
TW202311459A (zh) | 2023-03-16 |
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