KR20240008940A - Ps-b-pmma형 블록 공중합체의 유도 자기 조립의 패턴화를 위한 개선된 건식 에칭 능력을 가진 소수성 가교성 피닝 하층 - Google Patents
Ps-b-pmma형 블록 공중합체의 유도 자기 조립의 패턴화를 위한 개선된 건식 에칭 능력을 가진 소수성 가교성 피닝 하층 Download PDFInfo
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- C08F212/06—Hydrocarbons
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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- C08F220/12—Esters of monohydric alcohols or phenols
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
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- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
- C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
- C08F297/026—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type polymerising acrylic acid, methacrylic acid or derivatives thereof
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/02—Homopolymers or copolymers of hydrocarbons
- C09D125/04—Homopolymers or copolymers of styrene
- C09D125/08—Copolymers of styrene
- C09D125/14—Copolymers of styrene with unsaturated esters
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Graft Or Block Polymers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163189803P | 2021-05-18 | 2021-05-18 | |
| US63/189,803 | 2021-05-18 | ||
| PCT/EP2022/063127 WO2022243216A1 (en) | 2021-05-18 | 2022-05-16 | Hydrophobic crosslinkable pinning underlayers with improved dry etch capabilities for patterning directed self-assembly of ps-b-pmma type block copolymers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240008940A true KR20240008940A (ko) | 2024-01-19 |
Family
ID=82019972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237043549A Pending KR20240008940A (ko) | 2021-05-18 | 2022-05-16 | Ps-b-pmma형 블록 공중합체의 유도 자기 조립의 패턴화를 위한 개선된 건식 에칭 능력을 가진 소수성 가교성 피닝 하층 |
Country Status (7)
| Country | Link |
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| EP4044216A1 (en) * | 2021-02-16 | 2022-08-17 | Siltronic AG | Method for testing the stress robustness of a semiconductor substrate |
| KR20240101079A (ko) * | 2022-12-23 | 2024-07-02 | 삼성전자주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102868869B1 (ko) * | 2024-01-26 | 2025-10-14 | 에스케이하이닉스 주식회사 | 가교제 프리 포토레지스트를 활용한 네거티브 패턴 형성방법 |
| WO2026041747A1 (en) * | 2024-08-22 | 2026-02-26 | Merck Patent Gmbh | Carbon and silicone enriched new high-chi block copolymers of novel architectures for thin-film self-assembly applications |
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| US8101261B2 (en) * | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
| US8623458B2 (en) * | 2009-12-18 | 2014-01-07 | International Business Machines Corporation | Methods of directed self-assembly, and layered structures formed therefrom |
| US8691925B2 (en) * | 2011-09-23 | 2014-04-08 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions of neutral layer for directed self assembly block copolymers and processes thereof |
| US8835581B2 (en) | 2012-06-08 | 2014-09-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Neutral layer polymer composition for directed self assembly and processes thereof |
| JP6454324B2 (ja) * | 2013-04-03 | 2019-01-16 | ブルーワー サイエンス アイ エヌ シー． | 誘導自己組織化用ブロックコポリマーに用いる高エッチング耐性ポリマーブロック |
| US10457088B2 (en) | 2013-05-13 | 2019-10-29 | Ridgefield Acquisition | Template for self assembly and method of making a self assembled pattern |
| US9093263B2 (en) | 2013-09-27 | 2015-07-28 | Az Electronic Materials (Luxembourg) S.A.R.L. | Underlayer composition for promoting self assembly and method of making and using |
| US9181449B2 (en) | 2013-12-16 | 2015-11-10 | Az Electronic Materials (Luxembourg) S.A.R.L. | Underlayer composition for promoting self assembly and method of making and using |
| JP6558894B2 (ja) * | 2013-12-31 | 2019-08-14 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | コポリマーの設計、その製造方法およびそれを含む物品 |
| CN104749905B (zh) * | 2013-12-31 | 2018-02-13 | 罗门哈斯电子材料有限公司 | 定向自组装图案形成方法和组合物 |
| US9505945B2 (en) | 2014-10-30 | 2016-11-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Silicon containing block copolymers for direct self-assembly application |
| KR102651697B1 (ko) * | 2015-09-07 | 2024-03-27 | 아이엠이씨 브이제트더블유 | 트렌치 보조 케모에피탁시(trac) dsa 흐름 |
| US9574104B1 (en) * | 2015-10-16 | 2017-02-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions and processes for self-assembly of block copolymers |
| JP2017110150A (ja) * | 2015-12-18 | 2017-06-22 | Jsr株式会社 | 着色組成物、着色硬化膜及び表示素子 |
| EP3858872B1 (en) * | 2016-12-21 | 2022-05-11 | Merck Patent GmbH | Compositions and processes for self-assembly of block copolymers |
| US20190127506A1 (en) * | 2017-11-02 | 2019-05-02 | Rohm And Haas Electronic Materials Llc | Low temperature curable addition polymers from vinyl arylcyclobutene-containing monomers and methods for making the same |
| SG11202103809PA (en) * | 2018-12-07 | 2021-05-28 | Merck Patent Gmbh | Rapid cross-linkable neutral underlayers for contact hole self-assembly of polystyrene-b- poly(methyl methacrylate) diblock copolymers and their formulation thereof |
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| TW202307048A (zh) | 2023-02-16 |
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