KR20230118568A - 플라즈마 처리 방법 및 플라즈마 처리 장치 - Google Patents

플라즈마 처리 방법 및 플라즈마 처리 장치 Download PDF

Info

Publication number
KR20230118568A
KR20230118568A KR1020237019412A KR20237019412A KR20230118568A KR 20230118568 A KR20230118568 A KR 20230118568A KR 1020237019412 A KR1020237019412 A KR 1020237019412A KR 20237019412 A KR20237019412 A KR 20237019412A KR 20230118568 A KR20230118568 A KR 20230118568A
Authority
KR
South Korea
Prior art keywords
period
pulse voltage
supplying
power
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237019412A
Other languages
English (en)
Korean (ko)
Inventor
히코이치로 사사키
시롱 구오
다케노부 이케다
요시미츠 곤
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20230118568A publication Critical patent/KR20230118568A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020237019412A 2020-12-10 2021-12-08 플라즈마 처리 방법 및 플라즈마 처리 장치 Pending KR20230118568A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063123824P 2020-12-10 2020-12-10
US63/123,824 2020-12-10
PCT/JP2021/045132 WO2022124334A1 (ja) 2020-12-10 2021-12-08 プラズマ処理方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
KR20230118568A true KR20230118568A (ko) 2023-08-11

Family

ID=81973301

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237019412A Pending KR20230118568A (ko) 2020-12-10 2021-12-08 플라즈마 처리 방법 및 플라즈마 처리 장치

Country Status (5)

Country Link
US (2) US12476079B2 (https=)
JP (2) JP7737401B2 (https=)
KR (1) KR20230118568A (https=)
CN (1) CN116686070A (https=)
WO (1) WO2022124334A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202603792A (zh) * 2024-03-25 2026-01-16 日商東京威力科創股份有限公司 電漿處理裝置、電源系統、及電漿處理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009187975A (ja) 2008-02-01 2009-08-20 Toshiba Corp 基板のプラズマ処理装置及びプラズマ処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5822795B2 (ja) * 2012-07-17 2015-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6180890B2 (ja) * 2013-11-08 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR101585945B1 (ko) * 2014-07-16 2016-01-18 에이피티씨 주식회사 플라즈마를 이용한 반도체소자 식각장치 및 이를 이용한 반도체소자 식각방법
CN109891558A (zh) * 2016-11-07 2019-06-14 东京毅力科创株式会社 硬掩模及制造硬掩模的方法
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
US11817312B2 (en) * 2018-10-29 2023-11-14 Applied Materials, Inc. Delayed pulsing for plasma processing of wafers
JP7297795B2 (ja) * 2019-01-09 2023-06-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11361947B2 (en) 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
JP7450455B2 (ja) * 2020-05-13 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009187975A (ja) 2008-02-01 2009-08-20 Toshiba Corp 基板のプラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
US20260051456A1 (en) 2026-02-19
JPWO2022124334A1 (https=) 2022-06-16
TW202230512A (zh) 2022-08-01
JP2025179121A (ja) 2025-12-09
US12476079B2 (en) 2025-11-18
US20230326718A1 (en) 2023-10-12
CN116686070A (zh) 2023-09-01
WO2022124334A1 (ja) 2022-06-16
JP7737401B2 (ja) 2025-09-10

Similar Documents

Publication Publication Date Title
US12394599B2 (en) Plasma processing apparatus and plasma processing method
CN105719930B (zh) 等离子体蚀刻方法
US20240153742A1 (en) Plasma processing method and plasma processing apparatus
CN115705991A (zh) 等离子体处理装置和等离子体处理方法
US20260051456A1 (en) Plasma processing method and plasma processing apparatus
WO2024014398A1 (ja) プラズマ処理装置及びプラズマ処理方法
WO2022215556A1 (ja) エッチング方法及びエッチング処理装置
JP7828799B2 (ja) プラズマ処理装置及びプラズマ処理方法
TWI920185B (zh) 電漿處理方法及電漿處理裝置
CN120642034A (zh) 等离子体处理装置
WO2023210399A1 (ja) プラズマ処理装置、電源システム及びプラズマ処理方法
CN116631861A (zh) 等离子体处理方法以及等离子体处理系统
JP2022185241A (ja) プラズマ処理装置及びプラズマ処理方法
US20250232954A1 (en) Plasma processing apparatus and power supply system
US20250210307A1 (en) Etching method and plasma processing apparatus
WO2024070578A1 (ja) プラズマ処理装置及び電源システム
WO2023189292A1 (ja) プラズマ処理装置
CN120858443A (zh) 蚀刻装置和蚀刻方法
JP2024135093A (ja) プラズマ処理装置
WO2026034233A1 (ja) プラズマ処理装置及び電源システム
WO2026042553A1 (ja) プラズマ処理装置及び電源システム
CN120660177A (zh) 等离子体处理装置和等离子体处理方法
WO2024106256A1 (ja) プラズマ処理装置及びプラズマ処理方法
WO2024062804A1 (ja) プラズマ処理装置及びプラズマ処理方法
CN121175784A (zh) 蚀刻方法、dram电容器的制造方法和等离子体处理装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902