JP7737401B2 - プラズマ処理方法及びプラズマ処理装置 - Google Patents

プラズマ処理方法及びプラズマ処理装置

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Publication number
JP7737401B2
JP7737401B2 JP2022568309A JP2022568309A JP7737401B2 JP 7737401 B2 JP7737401 B2 JP 7737401B2 JP 2022568309 A JP2022568309 A JP 2022568309A JP 2022568309 A JP2022568309 A JP 2022568309A JP 7737401 B2 JP7737401 B2 JP 7737401B2
Authority
JP
Japan
Prior art keywords
period
plasma processing
pulse voltage
supplied
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022568309A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022124334A1 (https=
Inventor
彦一郎 佐々木
世栄 郭
武信 池田
泰光 昆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2022124334A1 publication Critical patent/JPWO2022124334A1/ja
Priority to JP2025143750A priority Critical patent/JP2025179121A/ja
Application granted granted Critical
Publication of JP7737401B2 publication Critical patent/JP7737401B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2022568309A 2020-12-10 2021-12-08 プラズマ処理方法及びプラズマ処理装置 Active JP7737401B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025143750A JP2025179121A (ja) 2020-12-10 2025-08-29 プラズマ処理方法及びプラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063123824P 2020-12-10 2020-12-10
US63/123,824 2020-12-10
PCT/JP2021/045132 WO2022124334A1 (ja) 2020-12-10 2021-12-08 プラズマ処理方法及びプラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025143750A Division JP2025179121A (ja) 2020-12-10 2025-08-29 プラズマ処理方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2022124334A1 JPWO2022124334A1 (https=) 2022-06-16
JP7737401B2 true JP7737401B2 (ja) 2025-09-10

Family

ID=81973301

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022568309A Active JP7737401B2 (ja) 2020-12-10 2021-12-08 プラズマ処理方法及びプラズマ処理装置
JP2025143750A Pending JP2025179121A (ja) 2020-12-10 2025-08-29 プラズマ処理方法及びプラズマ処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025143750A Pending JP2025179121A (ja) 2020-12-10 2025-08-29 プラズマ処理方法及びプラズマ処理装置

Country Status (5)

Country Link
US (2) US12476079B2 (https=)
JP (2) JP7737401B2 (https=)
KR (1) KR20230118568A (https=)
CN (1) CN116686070A (https=)
WO (1) WO2022124334A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202603792A (zh) * 2024-03-25 2026-01-16 日商東京威力科創股份有限公司 電漿處理裝置、電源系統、及電漿處理方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022482A (ja) 2012-07-17 2014-02-03 Hitachi High-Technologies Corp プラズマ処理装置
JP2015095493A (ja) 2013-11-08 2015-05-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR101585945B1 (ko) 2014-07-16 2016-01-18 에이피티씨 주식회사 플라즈마를 이용한 반도체소자 식각장치 및 이를 이용한 반도체소자 식각방법
WO2018084186A1 (ja) 2016-11-07 2018-05-11 東京エレクトロン株式会社 ハードマスク及びハードマスクを製造する方法
JP2020507922A (ja) 2017-02-01 2020-03-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ハードマスク応用向けのホウ素がドープされた炭化タングステン
WO2020145051A1 (ja) 2019-01-09 2020-07-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5224837B2 (ja) 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
US11817312B2 (en) * 2018-10-29 2023-11-14 Applied Materials, Inc. Delayed pulsing for plasma processing of wafers
US11361947B2 (en) 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
JP7450455B2 (ja) * 2020-05-13 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022482A (ja) 2012-07-17 2014-02-03 Hitachi High-Technologies Corp プラズマ処理装置
JP2015095493A (ja) 2013-11-08 2015-05-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR101585945B1 (ko) 2014-07-16 2016-01-18 에이피티씨 주식회사 플라즈마를 이용한 반도체소자 식각장치 및 이를 이용한 반도체소자 식각방법
WO2018084186A1 (ja) 2016-11-07 2018-05-11 東京エレクトロン株式会社 ハードマスク及びハードマスクを製造する方法
JP2020507922A (ja) 2017-02-01 2020-03-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ハードマスク応用向けのホウ素がドープされた炭化タングステン
WO2020145051A1 (ja) 2019-01-09 2020-07-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
US20260051456A1 (en) 2026-02-19
JPWO2022124334A1 (https=) 2022-06-16
TW202230512A (zh) 2022-08-01
JP2025179121A (ja) 2025-12-09
US12476079B2 (en) 2025-11-18
KR20230118568A (ko) 2023-08-11
US20230326718A1 (en) 2023-10-12
CN116686070A (zh) 2023-09-01
WO2022124334A1 (ja) 2022-06-16

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