JPWO2022124334A1 - - Google Patents
Info
- Publication number
- JPWO2022124334A1 JPWO2022124334A1 JP2022568309A JP2022568309A JPWO2022124334A1 JP WO2022124334 A1 JPWO2022124334 A1 JP WO2022124334A1 JP 2022568309 A JP2022568309 A JP 2022568309A JP 2022568309 A JP2022568309 A JP 2022568309A JP WO2022124334 A1 JPWO2022124334 A1 JP WO2022124334A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025143750A JP2025179121A (ja) | 2020-12-10 | 2025-08-29 | プラズマ処理方法及びプラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063123824P | 2020-12-10 | 2020-12-10 | |
| US63/123,824 | 2020-12-10 | ||
| PCT/JP2021/045132 WO2022124334A1 (ja) | 2020-12-10 | 2021-12-08 | プラズマ処理方法及びプラズマ処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025143750A Division JP2025179121A (ja) | 2020-12-10 | 2025-08-29 | プラズマ処理方法及びプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022124334A1 true JPWO2022124334A1 (https=) | 2022-06-16 |
| JP7737401B2 JP7737401B2 (ja) | 2025-09-10 |
Family
ID=81973301
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022568309A Active JP7737401B2 (ja) | 2020-12-10 | 2021-12-08 | プラズマ処理方法及びプラズマ処理装置 |
| JP2025143750A Pending JP2025179121A (ja) | 2020-12-10 | 2025-08-29 | プラズマ処理方法及びプラズマ処理装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025143750A Pending JP2025179121A (ja) | 2020-12-10 | 2025-08-29 | プラズマ処理方法及びプラズマ処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12476079B2 (https=) |
| JP (2) | JP7737401B2 (https=) |
| KR (1) | KR20230118568A (https=) |
| CN (1) | CN116686070A (https=) |
| WO (1) | WO2022124334A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202603792A (zh) * | 2024-03-25 | 2026-01-16 | 日商東京威力科創股份有限公司 | 電漿處理裝置、電源系統、及電漿處理方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014022482A (ja) * | 2012-07-17 | 2014-02-03 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP2015095493A (ja) * | 2013-11-08 | 2015-05-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| KR101585945B1 (ko) * | 2014-07-16 | 2016-01-18 | 에이피티씨 주식회사 | 플라즈마를 이용한 반도체소자 식각장치 및 이를 이용한 반도체소자 식각방법 |
| WO2018084186A1 (ja) * | 2016-11-07 | 2018-05-11 | 東京エレクトロン株式会社 | ハードマスク及びハードマスクを製造する方法 |
| JP2020507922A (ja) * | 2017-02-01 | 2020-03-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | ハードマスク応用向けのホウ素がドープされた炭化タングステン |
| WO2020145051A1 (ja) * | 2019-01-09 | 2020-07-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5224837B2 (ja) | 2008-02-01 | 2013-07-03 | 株式会社東芝 | 基板のプラズマ処理装置及びプラズマ処理方法 |
| US11817312B2 (en) * | 2018-10-29 | 2023-11-14 | Applied Materials, Inc. | Delayed pulsing for plasma processing of wafers |
| US11361947B2 (en) | 2019-01-09 | 2022-06-14 | Tokyo Electron Limited | Apparatus for plasma processing and method of etching |
| JP7450455B2 (ja) * | 2020-05-13 | 2024-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2021
- 2021-12-08 JP JP2022568309A patent/JP7737401B2/ja active Active
- 2021-12-08 CN CN202180083034.XA patent/CN116686070A/zh active Pending
- 2021-12-08 KR KR1020237019412A patent/KR20230118568A/ko active Pending
- 2021-12-08 WO PCT/JP2021/045132 patent/WO2022124334A1/ja not_active Ceased
-
2023
- 2023-06-07 US US18/330,501 patent/US12476079B2/en active Active
-
2025
- 2025-08-29 JP JP2025143750A patent/JP2025179121A/ja active Pending
- 2025-10-24 US US19/368,351 patent/US20260051456A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014022482A (ja) * | 2012-07-17 | 2014-02-03 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP2015095493A (ja) * | 2013-11-08 | 2015-05-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| KR101585945B1 (ko) * | 2014-07-16 | 2016-01-18 | 에이피티씨 주식회사 | 플라즈마를 이용한 반도체소자 식각장치 및 이를 이용한 반도체소자 식각방법 |
| WO2018084186A1 (ja) * | 2016-11-07 | 2018-05-11 | 東京エレクトロン株式会社 | ハードマスク及びハードマスクを製造する方法 |
| JP2020507922A (ja) * | 2017-02-01 | 2020-03-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | ハードマスク応用向けのホウ素がドープされた炭化タングステン |
| WO2020145051A1 (ja) * | 2019-01-09 | 2020-07-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20260051456A1 (en) | 2026-02-19 |
| TW202230512A (zh) | 2022-08-01 |
| JP2025179121A (ja) | 2025-12-09 |
| US12476079B2 (en) | 2025-11-18 |
| KR20230118568A (ko) | 2023-08-11 |
| US20230326718A1 (en) | 2023-10-12 |
| CN116686070A (zh) | 2023-09-01 |
| WO2022124334A1 (ja) | 2022-06-16 |
| JP7737401B2 (ja) | 2025-09-10 |
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