KR20230111234A - 반도체 웨이퍼의 처리액 및 그 제조 방법 - Google Patents

반도체 웨이퍼의 처리액 및 그 제조 방법 Download PDF

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Publication number
KR20230111234A
KR20230111234A KR1020237021381A KR20237021381A KR20230111234A KR 20230111234 A KR20230111234 A KR 20230111234A KR 1020237021381 A KR1020237021381 A KR 1020237021381A KR 20237021381 A KR20237021381 A KR 20237021381A KR 20230111234 A KR20230111234 A KR 20230111234A
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KR
South Korea
Prior art keywords
solution
ions
ion
mol
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237021381A
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English (en)
Korean (ko)
Inventor
도모아키 사토
유키 깃카와
다카후미 시모다
다카유키 네기시
Original Assignee
가부시끼가이샤 도꾸야마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시끼가이샤 도꾸야마 filed Critical 가부시끼가이샤 도꾸야마
Publication of KR20230111234A publication Critical patent/KR20230111234A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H01L21/32134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
KR1020237021381A 2020-11-26 2021-11-25 반도체 웨이퍼의 처리액 및 그 제조 방법 Pending KR20230111234A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020196348 2020-11-26
JPJP-P-2020-196348 2020-11-26
PCT/JP2021/043087 WO2022114036A1 (ja) 2020-11-26 2021-11-25 半導体ウェハの処理液及びその製造方法

Publications (1)

Publication Number Publication Date
KR20230111234A true KR20230111234A (ko) 2023-07-25

Family

ID=81755588

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237021381A Pending KR20230111234A (ko) 2020-11-26 2021-11-25 반도체 웨이퍼의 처리액 및 그 제조 방법

Country Status (7)

Country Link
US (1) US12247298B2 (https=)
EP (1) EP4269656A4 (https=)
JP (1) JP7819114B2 (https=)
KR (1) KR20230111234A (https=)
CN (1) CN116529421A (https=)
TW (1) TW202221104A (https=)
WO (1) WO2022114036A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI901664B (zh) * 2020-03-31 2025-10-21 日商德山股份有限公司 半導體用處理液及其製造方法
JP7638119B2 (ja) * 2021-03-15 2025-03-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001234373A (ja) 2000-02-23 2001-08-31 Nec Corp ルテニウム系金属の除去液及びその使用方法
JP2002161381A (ja) 2000-11-22 2002-06-04 Ebara Corp ルテニウム膜のエッチング方法
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
JP2019218436A (ja) 2018-06-15 2019-12-26 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7132058B2 (en) 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
US20030139047A1 (en) 2002-01-24 2003-07-24 Thomas Terence M. Metal polishing slurry having a static etch inhibitor and method of formulation
BRPI0418529A (pt) * 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
KR101766967B1 (ko) 2014-10-01 2017-08-09 한양대학교 산학협력단 3차원 구조를 갖는 복합구조체 및 이의 제조방법
WO2020049955A1 (ja) 2018-09-06 2020-03-12 富士フイルム株式会社 薬液、基板の処理方法
WO2020166677A1 (ja) * 2019-02-13 2020-08-20 株式会社トクヤマ オニウム塩を含む半導体ウェハの処理液

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001234373A (ja) 2000-02-23 2001-08-31 Nec Corp ルテニウム系金属の除去液及びその使用方法
JP2002161381A (ja) 2000-11-22 2002-06-04 Ebara Corp ルテニウム膜のエッチング方法
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
JP2019218436A (ja) 2018-06-15 2019-12-26 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物

Also Published As

Publication number Publication date
CN116529421A (zh) 2023-08-01
WO2022114036A1 (ja) 2022-06-02
TW202221104A (zh) 2022-06-01
JPWO2022114036A1 (https=) 2022-06-02
US12247298B2 (en) 2025-03-11
EP4269656A4 (en) 2025-01-29
US20220411937A1 (en) 2022-12-29
EP4269656A1 (en) 2023-11-01
JP7819114B2 (ja) 2026-02-24

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