CN116529421A - 半导体晶片处理液及其制造方法 - Google Patents

半导体晶片处理液及其制造方法 Download PDF

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Publication number
CN116529421A
CN116529421A CN202180079747.9A CN202180079747A CN116529421A CN 116529421 A CN116529421 A CN 116529421A CN 202180079747 A CN202180079747 A CN 202180079747A CN 116529421 A CN116529421 A CN 116529421A
Authority
CN
China
Prior art keywords
solution
ions
ion
semiconductor wafer
hypohalite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180079747.9A
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English (en)
Chinese (zh)
Inventor
佐藤伴光
吉川由树
下田享史
根岸贵幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of CN116529421A publication Critical patent/CN116529421A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
CN202180079747.9A 2020-11-26 2021-11-25 半导体晶片处理液及其制造方法 Pending CN116529421A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-196348 2020-11-26
JP2020196348 2020-11-26
PCT/JP2021/043087 WO2022114036A1 (ja) 2020-11-26 2021-11-25 半導体ウェハの処理液及びその製造方法

Publications (1)

Publication Number Publication Date
CN116529421A true CN116529421A (zh) 2023-08-01

Family

ID=81755588

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180079747.9A Pending CN116529421A (zh) 2020-11-26 2021-11-25 半导体晶片处理液及其制造方法

Country Status (7)

Country Link
US (1) US12247298B2 (https=)
EP (1) EP4269656A4 (https=)
JP (1) JP7819114B2 (https=)
KR (1) KR20230111234A (https=)
CN (1) CN116529421A (https=)
TW (1) TW202221104A (https=)
WO (1) WO2022114036A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI901664B (zh) * 2020-03-31 2025-10-21 日商德山股份有限公司 半導體用處理液及其製造方法
JP7638119B2 (ja) * 2021-03-15 2025-03-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3585437B2 (ja) * 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
US7132058B2 (en) 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
US20030139047A1 (en) 2002-01-24 2003-07-24 Thomas Terence M. Metal polishing slurry having a static etch inhibitor and method of formulation
BRPI0418529A (pt) * 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
KR101766967B1 (ko) 2014-10-01 2017-08-09 한양대학교 산학협력단 3차원 구조를 갖는 복합구조체 및 이의 제조방법
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
JP6901998B2 (ja) 2018-06-15 2021-07-14 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物
WO2020049955A1 (ja) 2018-09-06 2020-03-12 富士フイルム株式会社 薬液、基板の処理方法
WO2020166677A1 (ja) * 2019-02-13 2020-08-20 株式会社トクヤマ オニウム塩を含む半導体ウェハの処理液

Also Published As

Publication number Publication date
WO2022114036A1 (ja) 2022-06-02
TW202221104A (zh) 2022-06-01
JPWO2022114036A1 (https=) 2022-06-02
US12247298B2 (en) 2025-03-11
EP4269656A4 (en) 2025-01-29
KR20230111234A (ko) 2023-07-25
US20220411937A1 (en) 2022-12-29
EP4269656A1 (en) 2023-11-01
JP7819114B2 (ja) 2026-02-24

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