JPWO2022114036A1 - - Google Patents
Info
- Publication number
- JPWO2022114036A1 JPWO2022114036A1 JP2022565395A JP2022565395A JPWO2022114036A1 JP WO2022114036 A1 JPWO2022114036 A1 JP WO2022114036A1 JP 2022565395 A JP2022565395 A JP 2022565395A JP 2022565395 A JP2022565395 A JP 2022565395A JP WO2022114036 A1 JPWO2022114036 A1 JP WO2022114036A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020196348 | 2020-11-26 | ||
| JP2020196348 | 2020-11-26 | ||
| PCT/JP2021/043087 WO2022114036A1 (ja) | 2020-11-26 | 2021-11-25 | 半導体ウェハの処理液及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022114036A1 true JPWO2022114036A1 (https=) | 2022-06-02 |
| JPWO2022114036A5 JPWO2022114036A5 (https=) | 2024-11-29 |
| JP7819114B2 JP7819114B2 (ja) | 2026-02-24 |
Family
ID=81755588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022565395A Active JP7819114B2 (ja) | 2020-11-26 | 2021-11-25 | 半導体ウェハの処理液及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12247298B2 (https=) |
| EP (1) | EP4269656A4 (https=) |
| JP (1) | JP7819114B2 (https=) |
| KR (1) | KR20230111234A (https=) |
| CN (1) | CN116529421A (https=) |
| TW (1) | TW202221104A (https=) |
| WO (1) | WO2022114036A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI901664B (zh) * | 2020-03-31 | 2025-10-21 | 日商德山股份有限公司 | 半導體用處理液及其製造方法 |
| JP7638119B2 (ja) * | 2021-03-15 | 2025-03-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005516384A (ja) * | 2002-01-24 | 2005-06-02 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | タングステン研磨溶液 |
| JP2005227749A (ja) * | 2004-02-11 | 2005-08-25 | Mallinckrodt Baker Inc | ハロゲン酸素酸、その塩及び誘導体含有、マイクロエレクトロニクス洗浄組成物 |
| WO2020049955A1 (ja) * | 2018-09-06 | 2020-03-12 | 富士フイルム株式会社 | 薬液、基板の処理方法 |
| WO2020166677A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社トクヤマ | オニウム塩を含む半導体ウェハの処理液 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4510979B2 (ja) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
| JP3585437B2 (ja) * | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| US7132058B2 (en) | 2002-01-24 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tungsten polishing solution |
| WO2011074601A1 (ja) * | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
| KR101766967B1 (ko) | 2014-10-01 | 2017-08-09 | 한양대학교 산학협력단 | 3차원 구조를 갖는 복합구조체 및 이의 제조방법 |
| CN111684570B (zh) | 2018-01-16 | 2024-02-27 | 株式会社德山 | 含有次氯酸根离子的半导体晶圆的处理液 |
| JP6901998B2 (ja) | 2018-06-15 | 2021-07-14 | 株式会社トクヤマ | ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物 |
-
2021
- 2021-11-25 JP JP2022565395A patent/JP7819114B2/ja active Active
- 2021-11-25 KR KR1020237021381A patent/KR20230111234A/ko active Pending
- 2021-11-25 US US17/642,059 patent/US12247298B2/en active Active
- 2021-11-25 WO PCT/JP2021/043087 patent/WO2022114036A1/ja not_active Ceased
- 2021-11-25 EP EP21898008.4A patent/EP4269656A4/en active Pending
- 2021-11-25 CN CN202180079747.9A patent/CN116529421A/zh active Pending
- 2021-11-26 TW TW110144147A patent/TW202221104A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005516384A (ja) * | 2002-01-24 | 2005-06-02 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | タングステン研磨溶液 |
| JP2005227749A (ja) * | 2004-02-11 | 2005-08-25 | Mallinckrodt Baker Inc | ハロゲン酸素酸、その塩及び誘導体含有、マイクロエレクトロニクス洗浄組成物 |
| WO2020049955A1 (ja) * | 2018-09-06 | 2020-03-12 | 富士フイルム株式会社 | 薬液、基板の処理方法 |
| WO2020166677A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社トクヤマ | オニウム塩を含む半導体ウェハの処理液 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116529421A (zh) | 2023-08-01 |
| WO2022114036A1 (ja) | 2022-06-02 |
| TW202221104A (zh) | 2022-06-01 |
| US12247298B2 (en) | 2025-03-11 |
| EP4269656A4 (en) | 2025-01-29 |
| KR20230111234A (ko) | 2023-07-25 |
| US20220411937A1 (en) | 2022-12-29 |
| EP4269656A1 (en) | 2023-11-01 |
| JP7819114B2 (ja) | 2026-02-24 |
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