KR20230090574A - AlGaN/GaN hetero-junction structure of HEMT Device of having 3 dimensional structure - Google Patents

Abstract

The present invention relates to a high-power and high-frequency high-electron mobility transistor electronic device using an AlGaN/GaN heterojunction structure nitride semiconductor, and more particularly, to a support part having a three-dimensional structure that suppresses the generation of crystal defects on a substrate, leakage current, and It consists of an insulator with a high resistance value of ~MΩ or more that controls the breakdown voltage and a driver that controls high electron concentration and mobility. In particular, by forming a three-dimensional structure on the substrate to control the horizontal growth direction, which has a faster growth rate than the vertical direction with the conventional substrate surface, effectively controlling crystal defects propagating to the surface caused by the difference in lattice constant and thermal expansion coefficient with the substrate Provides an AlGaN / GaN heterojunction structure high frequency high electron mobility transistor (RF High Electron Mobility Transistor_HEMT) electronic device.

Description

High electron mobility transistor device of AlGaN / GaN heterojunction structure having a three-dimensional structure {AlGaN / GaN hetero-junction structure of HEMT Device of having 3 dimensional structure}

The present invention relates to a high-power and high-frequency high-electron mobility transistor electronic device using an AlGaN/GaN heterojunction structure nitride semiconductor, and more particularly, to a support part having a three-dimensional structure that suppresses the generation of crystal defects on a substrate, leakage current, and It consists of an insulator with a high resistance value of ~MΩ or more that controls the breakdown voltage and a driver that controls high electron concentration and mobility. In particular, by forming a three-dimensional structure on the substrate and controlling the horizontal growth direction, which has a faster growth rate than the vertical direction with the conventional substrate surface, crystals generated by the lattice constant and thermal expansion coefficient and large energy band gap difference with the substrate and propagated to the surface It relates to an AlGaN/GaN heterojunction structure high frequency high electron mobility transistor (RF High Electron Mobility Transistor_HEMT) electronic device that effectively controls defects.

In general, electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) are general transistor types made of semiconductor materials such as silicon or gallium arsenide (GaAs). When a silicon semiconductor material is used, it has a disadvantage in that high source resistance is generated because electron mobility_approximately 1450 cm ² /v.sec is low. These high source resistances severely detract from the otherwise obtainable High Performance Gain from electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) based on silicon semiconductor materials. [CRC Press, The Electrical Engineering Handbook, Second Edition, Dorf, pp.994,1997]

In addition, electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) based on gallium arsenide (GaAs) compound semiconductor materials have superior electron mobility (6000 cm ² /v.sec) than silicon semiconductor materials. And it has a low source resistance accordingly, so that high-frequency operation with excellent performance can be implemented. However, since the gallium arsenide compound semiconductor material has a relatively small breakdown voltage (Vbr) due to a small energy bandgap (Energy Bandgap_1.42Ev), field effect transistors (FETs) and high electrons based on the gallium arsenide compound semiconductor material Electronic devices such as mobility transistors (HEMTs) have limitations in implementing high power performance at high frequencies.

Performance development of electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) using GaN-based nitride semiconductors with AlGaN/GaN heterojunctions and remarkable growth of products have been achieved. GaN-based nitride semiconductors have a much larger energy bandgap (Energy Bandgap_3.4ev) than silicon and gallium arsenide semiconductor materials, so they have a high breakdown voltage and can accommodate a lot of current, so they are suitable for electronic devices operating at high power and high temperatures. Implementation of the first MESFET (Metal Semiconductor FET_Metal Semiconductor Field Effect Transistor based on single crystal GaN, Appl.Phys, Lett., Vol.62, pp.1789,(1993), M.A.Khan,..) using GaN-based nitride semiconductor Since then, field effect transistors (FETs) and high electron mobility transistors (HEMTs) capable of implementing high power/high frequency performance using AlGaN/GaN hetero-junctions (Hetro-Junction) have been developed and commercialized.

US Pat. No. 5,192,987 to Khan et al. discloses an AlGaN/GaN substrate HEMT grown on a buffer and substrate and a method for producing the same. HEMTs of other AlGaN/GaN heterojunction structures were published in [IEEE Electron Device Letter, Vol.18, No.10, October 1997, pp.492] by Gaska et al. Field effect of a high-current AlGaN heterostructure grown on a P-type SiC substrate in an academic journal [IEEE Electron Devices Letters, Vol.19, No.2, February 1998, Page.54] contributed by Ping et al. DC and microwave performance of transistors". Korean Patent No. 0710654 by Yifeng Wu et al. states "Group III nitride-based field effect transistors with reduced trapping and high electron mobility transistors and their manufacture. Method" and Korean Patent No. 0920434 discloses "Insulation Gate Gallium Arsenide, Nitride/Gallium Nitride High Electron Mobility Transistor". In addition, Beach Roberts Korean Patent No. 1045573 discloses "Group III Nitride Enhancement Mode Device". Korean Patent No. 0955249 by Toshihiro Oki discloses "Nitride Semiconductor Device and Manufacturing Method Thereof" and Kenichiro Kurahashi et al. discloses "Semiconductor Device and Manufacturing Method Thereof" in Korean Patent No. 1870524. US Patent No. 7,772,055 to Marianne Germaine et al. discloses "ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTRO DEVICES".

The reasons why GaN-based nitride semiconductors are suitable for high-frequency and high-power electronic devices compared to other III-V compound semiconductors are represented as follows. First, GaN-based nitride semiconductors have a maximum electron speed of 2.7x10 ⁷ cm/sec at room temperature, which is faster than that of gallium arsenide (GaAs) compound semiconductors. High-frequency characteristics can be obtained, and current and current density are improved. Second, the breakdown electric field is 3 to 4 MV/cm, comparable to the value in silicon carbide (SiC), and the high breakdown electric field due to the wide energy band gap can handle high force by increasing the breakdown voltage. Thirdly, the discontinuity of the conduction band in the AlGaN/GaN heterojunction is large, and the amount of charge that can be accommodated in the 2-dimensional electron gas (DEG) layer is large. That is, the energy difference in the heterojunction increases due to the large energy bandgap difference between AlN with an energy bandgap of 6.2eV and GaN with an energy bandgap of 3.4eV, and about 70% of the energy difference forms a discontinuity in the conduction band. A larger energy difference can be obtained. The large conduction band discontinuity helps charge accumulation in the channel and plays a very important role in increasing the maximum current. Fourth, a significant amount of strain occurs around the heterojunction surface due to mismatch of lattice mismatch between AlN and GaN thin films. This stress generates a piezoelctric_effect in the hexagonal close-packed structure, A built-in electric field is formed. In most cases, this built-in electric field serves to focus more electrons on the channel where electrons move, so the amount of charge in the channel increases and eventually helps to increase the maximum current.

In general, electronic devices such as AlGaN/GaN heterojunction structure field effect transistors (FETs) and high electron mobility transistors (HEMTs) have low mutual transfer conductance (Gm) characteristics and are used as electronic channel layers. Depending on whether the single crystal GaN thin film layer is doped or not doped with impurities (Si), the sheet carrier concentration and electron mobility characteristics in the two-dimensional electron gas (2DEG) layer formed at the AlGaN/GaN heterojunction interface are improved.

Single-crystal GaN nitride semiconductors have excellent material properties, and when forming an AlGaN/GaN heterojunction structure, a high-concentration two-dimensional electron layer (2DEG) is created, so low on-resistance, high current density, and high electron mobility can be obtained. . GaN-based nitride semiconductors are grown as high-quality single-crystal epitaxial thin films on silicon, sapphire, and silicon carbide substrates using MOCVD or MBE equipment. Among them, silicon carbide (SiC) substrates have excellent thermal conductivity, It is easy to secure high output and excellent high-frequency performance and reliability of electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) of AlGaN/GaN heterojunction structure because the difference in thermal expansion coefficient is small. In addition, it has superior performance advantages over GaAs and InP-based devices, which are chemical semiconductors, such as excellent high-temperature stability, 10 times higher output per unit area, high linearity, and excellent low-noise characteristics.

In addition, the silicon carbide (SiC) substrate has excellent thermal conductivity, so it can effectively dissipate heat generated during device operation to mitigate the deterioration of device characteristics due to heat, and SiC and GaN have different lattice constants and thermal expansion coefficients. , compared to the Sapphire substrate, it is easy to secure excellent reliability by reducing crystal defects and stress, and it is possible to grow a high-quality GaN-based nitride semiconductor thin film layer and structure, so that better electrical properties can be obtained.

In order to manufacture RF amplification devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) having an AlGaN/GaN heterojunction structure, high-quality silicon carbide (SiC) substrates with excellent thermal conductivity and easy high output The single crystal structure of is grown using MOCVD and MBE equipment. Research and development for improving the performance of FET and HEMT electronic devices having an AlGaN/GaN heterojunction structure is being concentrated. For this, the following conditions must be satisfied. 1) Design and growth of AlGaN/GaN heterojunction structure, 2) Growth of high-resistance buffer layer and back barrier structure, 3) Design of AlGaN/GaN heterojunction structure for FET and HEMT devices to improve RF characteristics, 4) Improvement of reliability Research / development on AlGaN / GaN heterojunction structure growth technology for More specifically, 1) AlGaN/GaN heterojunction structure growth technology using appropriate AlGaN barrier layer growth conditions, 2) AlGaN and p-GaN back barrier technology for reducing leakage current and improving breakdown voltage, 3) Iron or Carbon doping 4) thin Al(In)N barrier layer growth technology to reduce the short channel effect, 5) in-situ capping layer growth technology for excellent surface properties. Through the design and growth of this optimized AlGaN/GaN heterojunction structure, RF high-output power amplification devices of FET and HEMT electronic devices are provided.

The technical problem to be achieved by the present invention is to effectively control crystal defects, especially line defects propagating to the surface, generated by the lattice constant and thermal expansion coefficient of the substrate and the large energy band gap difference, resulting in low bulk leakage current and high breakdown voltage and excellent An object of the present invention is to provide a high frequency (RF) high electron mobility transistor (HEMT) electronic device having an AlGaN/GaN hetero-matching structure having high frequency (RF) characteristics.

The present invention for achieving the above technical problem, in the HEMT electronic device having an AlGaN / GaN heterojunction structure; The support part 100 formed on the substrate to control the lattice constant and strain (stress), the insulating part 200 formed on the support part to control the leakage current and the breakdown voltage, and the 2DEG electron concentration formed on the insulating part And a driving unit 100 for controlling the mobility, the support unit 300; An AlN lattice matching layer 401 formed on the substrate, an Al _y Ga _1-y N strain (stress) matching layer 402 formed on the AlN lattice matching layer, and the Al _y Ga _1-y N strain (stress ) composed of an AlGaN support layer 403 formed on the matching layer, and the insulating part 200; It is a semi-insulating Al _y Ga _1-y N layer 404 having a structure of Acceptor-H complex distribution having a high resistance value of ~ MΩ or more, and the driving unit 100; An Al _a Ga _1-a N (405) electron confinement layer 405 formed on the semi-insulating Al _y Ga _1-a N layer 404, and an upper portion of the Al _a Ga _1-a N electron confinement layer 405 An AlGaN channel layer 406 formed on the AlGaN channel layer, an AlN space layer 408 formed on the AlGaN channel layer, an Al _c Ga _1-c N barrier layer 409 formed on the AlN space layer 408, the A surface protection layer and an electrode contact layer 410 formed on the Al _c Ga _1-c N barrier layer 409, or an n-AlGaN electron supply layer on the Al _c Ga _1-c N barrier layer 409 It provides a HEMT electronic device having an AlGaN / GaN heterojunction structure including;

Another technical problem of the present invention is, in a HEMT electronic device having an AlGaN / GaN heterojunction structure having a three-dimensional structure; A support part 300 having a three-dimensional structure formed on a substrate, an insulating part 200 formed on the support part 300, and a driving part 100 formed on the insulating part 200 and controlling 2DEG electron concentration and mobility. ), and the support 100 having the three-dimensional structure; An AlN lattice matching layer 501 having a three-dimensional structure of the bottom/side/top in a regular arrangement on the substrate, and AlN formed in a mixture of vertical and horizontal directions on the top of the AlN lattice matching layer 501 of the primary three-dimensional structure A lattice matching layer 502, an Al _x Ga _1-x N strain (stress) matching layer 503 formed on the AlN lattice matching layer formed by mixing the vertical and horizontal directions, and the Al _x Ga _1-x N strain (Stress) Al _y Ga _1-y N support layer 504 formed on top of the matching layer 503, the insulating part 200 has a structure of Acceptor-H complex distribution with a high resistance value of ~ MΩ or more Semi-insulating property Al _y Ga _1-y N layer 505, the driving unit 300; An Al _a Ga _1-a N electron confinement layer 506 formed on the semi-insulating Al _y Ga _1- y N layer 505, and an Al _a Ga _1-a N electron confinement layer 506 formed on the top Al _b Ga _1-b N channel layer 507, an AlN space layer 509 formed on the Al _b Ga _1-b N channel layer 507, and Al _c formed on the AlN space layer 509 a Ga _1-c N barrier layer 510, a surface protection layer and an electrode contact layer 511 formed on the Al _c Ga _1-c N barrier layer 510; Provides a HEMT electronic device having an AlGaN / GaN heterojunction structure including a 2DEG layer 508 at the interface between the AlN space layer 509 formed on the upper part and the Al _b Ga _1-b N channel layer formed on the lower part.

And the technical problem of the present invention, in the HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure; It consists of a support part 300 having a three-dimensional structure formed on a substrate, an insulating part 200 formed on the support part having the three-dimensional structure, and a driving part 300 formed on the insulating part, and the support part having the three-dimensional structure is (300); An AlN lattice matching layer 601 having a primary three-dimensional structure of the bottom / side / top in a regular arrangement on the substrate, and a mixture of vertical and horizontal directions on the top of the AlN lattice matching layer 601 of the primary three-dimensional structure The AlN lattice matching layer 602 having a secondary three-dimensional structure formed on top of the AlN lattice matching layer having a secondary three-dimensional structure formed by mixing the vertical and horizontal directions, and Al formed by mixing the vertical and horizontal directions _x Ga _1-x N strain (stress) matching layer 603, an Al _y Ga 1-y N support layer formed on top of the Al _x Ga _{1 -x} N strain (stress) matching layer formed by mixing the vertical and horizontal directions (604), the insulating part 200 is a semi-insulating Al _y Ga _1-y N layer 605 having a structure of Acceptor-H complex distribution having a high resistance value of ~ MΩ or more, and the driving part 100 is ; An Al _a Ga _1-a N electron confinement layer 606 formed on the semi-insulating Al _y Ga _1-a N layer 605, and an Al _a Ga _1-a N electron confinement layer 606 formed on the top Al _b Ga _1-b N channel layer 607, an AlN space layer 609 formed on the Al _b Ga _1-b N channel layer 607, and Al _c formed on the AlN space layer 609 a Ga _1-c N barrier layer 610, a surface protection layer and an electrode contact layer 611 formed on the Al _c Ga _1-c N barrier layer; It provides a HEMT electronic device having an AlGaN / GaN heterojunction structure including a 2DEG layer 608 at the interface between the AlN space layer 509 formed on the upper part and the Al _b Ga _1-b N channel layer formed on the lower part.

And another technical problem of the present invention, in the HEMT electronic device having an AlGaN / GaN heterojunction structure having a three-dimensional structure; It consists of a support part 300 having a three-dimensional structure formed on a substrate, an insulating part 200 formed on the support part having the three-dimensional structure, and a driving part 100 formed on the insulating part, and the support part having the three-dimensional structure 300 is; An AlN lattice matching layer 701 having a regular arrangement of lower/side/upper primary three-dimensional structures on a substrate, and a lower/side/upper formed on the AlN lattice matching layer 701 having a primary three-dimensional structure An AlN lattice matching layer 702 having a secondary three-dimensional structure, an AlGaN strain matching layer 703 having a three-dimensional structure of lower / side / upper parts on top of the AlN lattice matching layer of the secondary three-dimensional structure, and Al _x Ga ₁ The three-dimensional area of the three-dimensional structure of the _-x N strain matching layer 703 is larger than that of the secondary AlN lattice matching layer 702, and the top of the Al _x Ga _1-x N strain matching layer 703 having the three-dimensional structure The Al _y Ga _1-y N support layer 704 having a three-dimensional structure formed by mixing the vertical and horizontal directions, and the insulating part 200 has an Acceptor-H complex distribution structure with a high resistance value of ~ MΩ or more A semi-insulating Al _y Ga _1-y N layer 705, the driving unit 100; An Al _a Ga _1-a N electron confining layer 706 formed on the semi-insulating Al _y Ga _1- y N layer 705, and an Al _a Ga _1-a N electron confinement layer 706 formed on the top Al _b Ga _1-b N channel layer 707, an AlN space layer 709 formed on the Al _b Ga _1-b N channel layer 707, and Al _c formed on the AlN space layer 709 a Ga _1-c N barrier layer 710, a surface protection layer and an electrode contact layer 711 formed on the Al _c Ga _1-c N barrier layer 710; Provides a HEMT electronic device having an AlGaN / GaN heterojunction structure including a 2DEG layer 708 at the interface between the AlN space layer 709 formed on the upper part and the Al _b Ga _1-b N channel layer formed on the lower part.

In addition, another technical problem of the present invention is a HEMT electronic device having an AlGaN / GaN heterojunction structure having a three-dimensional structure, a support part 100 having a three-dimensional structure formed on an upper part of a substrate, and an upper part of the support part 300 having the three-dimensional structure The support part 100 having the three-dimensional structure and composed of an insulating part 200 formed and a driving part 100 formed on an upper part of the insulating part; The AlN lattice matching layer 801 having a primary three-dimensional structure of the bottom/side/top in a regular arrangement on the substrate, and the bottom/side/top formed on the AlN lattice matching layer 801 having the primary three-dimensional structure AlN lattice matching layer 802 having a secondary three-dimensional structure, an Al _x Ga _1-x N strain matching layer having a three-dimensional structure of lower / side / upper part on top of the AlN lattice matching layer 802 of the secondary three-dimensional structure ( 803), Al _y Ga _1-y N support layer 804 having a three-dimensional structure of lower / side / upper part on top of the Al _x Ga _1-x N strain matching layer 803 having the three-dimensional structure, and the insulating part 200 )silver; It is formed on top of the Al _y Ga _1-y N support layer 804 having the three-dimensional structure, growth in the horizontal and vertical directions is mixed, and has an Acceptor-H complex distribution structure with a high resistance value of ~ MΩ or more. A semi-insulating Al _y Ga _1-y N layer 805, the driving unit 100; An Al _a Ga _1-a N electron confinement layer 806 formed on the semi-insulating Al _y Ga _1-a N layer 805, and an Al _a Ga _1-a N electron confinement layer 806 formed on the top Al _b Ga _1-b N channel layer 807, an AlN space layer 809 formed on the Al _b Ga _1-b N channel layer 807, and Al _c formed on the AlN space layer 809 A Ga _1-c N barrier layer 810, a surface protection layer and an electrode contact layer 811 formed on the Al _c Ga _1-c N barrier layer; It provides a HEMT electronic device having an AlGaN / GaN heterojunction structure including; formed Al _b Ga _1-b 2DEG layer 808 at the interface of the N channel layer.

According to the present invention described above, an AlN lattice matching layer having a regularly arranged [lower/side/upper] three-dimensional structure is formed on the top of a substrate, and the same three-dimensional structure is gradually formed on top of the AlN lattice matching layer having the three-dimensional structure. It consists of an AlGaN strain matching layer with a large three-dimensional area and an AlGaN support layer. The AlN lattice matching layer, AlGaN strain matching, and AlGaN support layer having a three-dimensional structure are a three-dimensional growth method in which horizontal and vertical are mixed, unlike the conventional growth method in which the vertical direction is prioritized on the substrate surface, and the horizontal growth direction is the minimum than the vertical growth direction. Provides a growth rate more than 3 times faster. Therefore, a high-quality AlGaN/GaN heterojunction RF HEMT electronic device that effectively suppresses line defects generated by the difference in lattice constant and thermal expansion coefficient with the substrate in the horizontal growth direction and propagated to the surface is provided. In addition, by applying a semi-insulating Al _y Ga _1-y N layer with a high resistance value of ~MΩ or more, FET and RF HEMT having an AlGaN / GaN heterojunction structure with excellent RF characteristics due to low leakage current and high breakdown voltage An electronic device is provided.

Figure 1. Surface photographs of planar (vertical) and three-dimensionally grown (horizontal/vertical mixed) AlN and AlGaN/AlN heterojunction structures on top of a single-crystal GaN layer.
Figure 2. Surface photograph (a) and AB cross-section (b) of an AlGaN/AlN heterojunction formed in a three-dimensional structure on top of a single-crystal GaN layer.
Figure 3. HEMT Epi with AlGaN/GaN heterojunction structure by lattice constant difference. Wafer cross section.
Figure 4. HEMT Epi with AlGaN/GaN heterojunction structure. Wafer cross section.
Figure 5. HEMT Epi with planar and three-dimensional AlGaN/GaN heterojunction structures. Wafer cross section.
Figure 6. HEMT Epi with planar and three-dimensional AlGaN/GaN heterojunction structures. Wafer cross section.
Figure 7. HEMT Epi with planar and three-dimensional AlGaN/GaN heterojunction structures. Wafer cross section.
Figure 8. HEMT Epi with planar and three-dimensional AlGaN/GaN heterojunction structures. Wafer cross section.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments make the disclosure of the present invention complete, and the common knowledge in the art to which the present invention belongs. It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Throughout the specification, reference numerals refer to components.

Hereinafter, a high frequency (RF) high electron mobility transistor (High Electron Mobility Transistor, HEMT, hereinafter referred to as HEMT) with improved leakage current and breakdown voltage according to the present invention will be described in detail with reference to the accompanying drawings. .

High-concentration electron movement in AlGaN/GaN heterojunction structure field effect transistor (Field Effect Transistor_FET, hereinafter referred to as FET) and high electron mobility transistor (High Electron Mobility Transistor_HEMT, hereinafter referred to as HEMT) RF electronic device using nitride semiconductor material In order to improve the conductivity, a high-quality GaN channel layer must be grown, and in order to limit the mobility of electrons into the channel layer, a thick, high-quality, high-resistance GaN layer with a high breakdown voltage and a maximum prevention of leakage current flowing down the channel layer is inevitable. is required as The high-resistance single-crystal GaN layer uses an undoped GaN layer using Ga vacancies that serve as a deep acceptor without doping impurities, and a GaN layer doped with iron, carbon, and Fe impurities. Iron impurities are difficult to grow due to the memory effect, and the carbon impurity doping method is a high-resistance GaN layer by doping carbon, which is a by-product formed in the process of dissociation by the high growth temperature as the TMGa MO source is introduced into the growth chamber. way to implement it.

In the present invention, by using MOCVD (Metal Organic Chemical Vapor Deposition) equipment, a high-quality thick semi-insulating Al _x Ga _1-x N layer having low bulk leakage current and high breakdown voltage is formed with p-type dopant impurities Fe, Ir , Zn (DMZn), Mg (Cp ₂ Mg), and Carbon (TMGa) are implanted during the Al _x Ga _1-x N layer growth to form an acceptor (Mg, Zn)-H complex structure with high resistance of ~MΩ or more. has grown. In the case of Zn (DMZn) or Mg (Cp ₂ Mg) impurities, the high-quality single-crystal Al _x Ga _1-x N layer has strong ionic bonding characteristics, so the energy level of the impurity is 200 meV, and the acceptor (Mg or Zn)- The semi-insulating property of the H complex itself was used. The Acceptor-H complex present in the Al _x Ga _1-x N layer contains Zn or Mg impurities that have almost no hole carriers contributing to electrical conductivity by a very high resistance value. It is not the p-type Al _x Ga _1-x N layer that forms holes contributing to electrical conductivity by distributing in combination with hydrogen.

In the present invention, a support part including a three-dimensional structure of a bottom/side/upper part in a regular arrangement that effectively suppresses generation and propagation of crystal defects, an insulating part having low leakage current and high breakdown voltage, and a driving part having high electron concentration/mobility Provided are FET and RF HEMT electronic devices having a three-dimensional structure of AlGaN / GaN heterogeneous matching.

1 shows, as an embodiment of the present invention, after growing an AlN buffer layer on a sapphire substrate using MOCVD equipment, growing an undoped GaN layer having a thickness of 2 μm at a high temperature of 1050 ° C, and 1100 ° C on top of the undoped GaN layer It shows surface photographs comparing the shapes of heterojunctions grown in planar and three-dimensional structures with an AlN layer with a thickness of 1000 Å and an AlGaN layer with a thickness of 0.3 μm on top of the AlN layer at a high temperature of .

In addition, AlN / GaN and AlGaN / AlN / GaN heterojunctions having a three-dimensional structure are formed by dry etching in patterns having various shapes with an etch depth in the range of 0.1 to 1 μm on the undoped GaN surface, and then re-grown. way. At this time, the source and carrier gases used are high purity NH ₃ , H ₂ , N ₂ , the MO source is TMGa and TMAl, and the growth temperature of the AlN and AlGaN layers is 1100 ° C. Al composition (content) for individual AlGaN layers are 90, 80, 70, and 60%, respectively. In addition, when a SiC substrate is used instead of a sapphire substrate, a relatively high quality crystallinity is provided due to a small difference in lattice constant from the GaN layer.

Referring to FIG. 1, when an AlN or AlGaN/AlN heterojunction structure is grown on top of GaN grown in the vertical direction on a conventional substrate surface, lattice mismatch due to the difference in lattice constant and thermal expansion coefficient between GaN and AlN layers, and A large stress is generated due to a large difference in energy band gap, and cracks and pits are formed on the surface. In general, as the growth temperature increases/decreases, the GaN layer acts as compressive strain and the AlN layer acts as tensile strain, so an appropriate strain (stress) matching layer is required.

Referring to FIG. 1, in the case of AlN / GaN and AlGaN / AlN / GaN structures having three-dimensional structures, cracks and pits in concave (hexagonal), convex (cycle) and mixed structures (hexagonal / circular) ( A clean surface without pits is obtained. This result is because horizontal growth takes precedence over vertical growth in three-dimensional structures having various shapes and structures. That is, as the three-dimensional structure is grown in the horizontal direction, the strain (stress) propagating in the vertical direction on the substrate surface is converted to the horizontal direction by the growth mode that has priority in the horizontal direction.

In addition, the AlGaN layer having various Al compositions (contents) provides a clean surface free of cracks and pits even when the AlGaN layer varies from 90% to 60%. Therefore, by applying various types of three-dimensional structures, vertical and horizontal growth modes are controlled to effectively control crystal defects (line defects) propagating toward the surface, thereby providing a high-quality AlGaN/GaN heterojunction RF HEMT electronic device. .

Therefore, an object of the present invention is to effectively suppress initial crystal defects formed in a substrate by applying the advantages of the three-dimensional structure described above to the initial stage of growth of an AlGaN/GaN heterojunction structure Epi-Wafer for an RF HEMT electronic device.

Table 1, as an embodiment of the present invention, after growing an AlN buffer layer on a sapphire substrate using MOCVD equipment, growing an undoped GaN layer having a thickness of 2 μm at a high temperature of 1050 ° C., and 1000 Å at a high temperature of 1100 ° C. It shows the BOW value before/after growth for an AlN layer having a thickness of

Referring to Table 1, as a result of growing the AlN layer on top of the GaN layer, the overall BOW value is reduced. Since the AlN layer formed in is generated with tensile strain, and the energy band gap is large even if the thickness is thin, the warpage value is relatively reduced for 5 samples. Therefore, through the thickness control of the AlN layer on the thick GaN layer, strain (stress) matching between the GaN layer and the AlN layer is possible, thereby providing a technology for effectively controlling the generation of crystal defects and the line defects propagating from the substrate to the surface direction. do.

In the present invention, a high-quality AlGaN / GaN heterojunction structure FET and RF HEMT electronic device in which crystal defects are effectively suppressed by forming a support having a three-dimensional structure on top of the substrate with the warpage value control technology described above is provided.

Fig. 2 shows a plane photograph of an AlGaN/AlN/GaN heterojunction having a three-dimensional structure having a hexagonal concave shape as an example of the present invention. The dotted line in the hexagonal concave shape is a three-dimensional GaN layer with a regular arrangement, and has a curved surface from the etched lower surface to the unetched upper surface, and the area of the lower surface is larger than the area of the upper surface.

Referring to FIG. 2, an AlN layer and an AlGaN layer are grown in the same shape as the three-dimensional GaN layer having a regular arrangement, and the etched side surface having a vertical growth direction and a curved surface on the etched lower surface and the unetched upper surface. has a horizontal growth direction. Growth in the horizontal direction takes precedence over vertical direction, and it is characterized by having a preferential growth rate that is at least three times faster. In addition, the area of the three-dimensional structure increases as it grows from the GaN layer to the AlGaN layer, and the horizontal direction is influenced by the growth rate, and the growth of the three-dimensional structure proceeds in a semi-polar direction that proceeds to the three-dimensional plane.

Referring to FIG. 2, growth in the horizontal direction in the A-B cross section of the three-dimensional structure is at least 3 times and up to 8 times faster than in the vertical direction, and crystal defects generated from the substrate and propagated toward the surface by this fast growth rate in the horizontal direction ( pre-defect) effectively inhibits progression, and the fast growth rate in the horizontal direction gives the effect of dispersing strain (stress) in the horizontal direction, providing a low BOW value.

In addition, by using the fast growth mode in the horizontal direction, design conditions such as size, height, and density of the shape of the three-dimensional structure are optimized to obtain a low BOW value in the three-dimensional structure in which vertical and horizontal growth directions are mixed. FET or RF HEMT of AlGaN/GaN heterojunction structure of an AlGaN/GaN heterojunction support part having a plane with controlled crystal defects, a semi-insulating insulating part having a high resistance value formed on the support part, and a driving part that performs a substantial electrical operation An electronic device is provided.

Accordingly, the present invention provides an RF HEMT electronic device having an AlGaN/GaN heterojunction structure capable of effectively suppressing the generation of crystal defects from the beginning of growth by applying a fast growth mode in the horizontal direction.

3 shows a cross-section of an Epi structure for an RF HEMT electronic device of an AlGaN/GaN heterojunction structure designed in consideration of a practical difference in lattice constant on a substrate (sapphire, SiC) as another embodiment of the present invention. Epi for the RF HEMT electronic device. Structures are simultaneously applied to flat and three-dimensional structures, and are also implemented as flat surfaces.

Referring to FIG. 3, a support including an AlN lattice matching layer, an AlGaN multi-strain (stress) matching layer, and an AlGaN support layer on the substrate, the support due to the difference in lattice constant and thermal expansion coefficient with the substrate and a large energy band gap It plays a role in effectively suppressing crystal defects (pre-defects) that propagate in the vertical direction of the substrate surface when strain (stress) is generated. In addition, an insulating part that controls low leakage current and high breakdown voltage, gate electrode and Schottky electrode contact, source and drain electrode and ohmic electrode contact, 2DEG electron concentration / mobility, and a driver for controlling electron flow in the channel layer Consisting of An AlGaN/GaN heterojunction structure FET and RF HEMT electronic device is provided.

The driving unit is composed of an AlGaN or AlN electron confinement layer, an AlGaN channel layer, an AlN space layer and an AlGaN barrier layer, and a surface protection layer or an electrode contact layer on top of the semi-insulating AlGaN layer.

Referring to FIG. 3, the Al composition (content) of the AlGaN support layer is within 10% and is the same as that of the semi-insulating AlGaN layer. The Al composition (content) of the AlGaN or AlN electron confinement layer is 20%, and since it serves to prevent electrons in the 2DEG layer from flowing in the bulk direction, it is called an electron confinement layer. The AlGaN channel layer has an Al composition of less than 10%, and high quality crystallinity is required to minimize electron traps due to crystal defects.

In addition, in the AlN space, a two-dimensional gas (2DEG) layer is formed at the interface with the channel layer due to the difference in high energy band gap, and the AlGaN barrier layer has a thickness within 50 Å, which is the thickness at which electrons can tunnel, and the AlGaN barrier layer The Al composition (content) is provided in the range of 25 to 30%. In addition, a surface protective layer or an electrode contact layer structure is included to prevent the generation of native oxides such as AlO and GaO due to the combination with oxygen due to Al or Ga dangling bonding on the surface of the AlGaN barrier layer.

In addition, an n-AlGaN electron supply layer doped with Si n-type impurities is applied on top of the AlGaN barrier layer according to the performance of the RF HEMT electronic device of the AlGaN/GaN heterojunction structure.

4 is an example of an embodiment of the present invention, Ep. A cross-sectional view (10) of the structure is shown.

4, the support 300 composed of an AlN lattice matching layer 401, an Al _x Ga _1-x N strain matching layer, and a semi-insulating Al _y Ga _1-y N layer 404 and a half Insulation 200 of insulating Al _y Ga _1-y N layer 404, and Al _a Ga _1-b N electron confinement layer 405, Al _a Ga _1-b N channel layer 406, AlN space layer 408, an Al _c Ga _1-c N barrier layer 409, and a driving unit 100 including a surface protection layer and an electrode contact layer 410.

Referring to FIG. 4, after forming an AlN lattice matching layer 401 having a thickness range of 0.05 μm to 0.5 μm, more preferably 0.05 μm to 0.3 μm, on a substrate 400 at a high growth temperature, An Al _x Ga _1-x N (80→20%) layer in which the Al composition (content) is sequentially changed within a certain thickness range and a GaN layer having a thin thickness range without impurities are stacked [Al ₈₀ Ga ₂₀ A strain matching layer 402 having a structure of N/GaN]/[Al ₆₀ Ga ₄₀ /GaN]/[Al ₄₀ Ga ₆₀ N/GaN]/[Al ₂₀ Ga ₈₀ N/GaN] is formed. The thickness of each Al _x Ga _1-x N (80→20%) layer is 0.05 μm to 0.5 μm, preferably 0.05 to 0.2 μm, and the thickness of the GaN layer is 20 to 200 Å, more preferably 50 Å ~100 Å range.

After forming a high-quality Al _y Ga _1-y N support layer 403 having a thickness range of 0.2 μm to 3 μm and preferably having a thickness range of 0.2 to 2 μm on top of the strain matching layer 402, a high A semi-insulating Al _y Ga _1-y N layer 404) having a structure of Acceptor-H complex distribution with a resistance value within a thickness range of 0.2 μm to 3 μm, preferably in a thickness range of 0.2 μm to 1 μm is formed. . An Al _a Ga _1-a N electron confinement layer 405 on top of the semi-insulating Al _y Ga _1-y N layer 404 in a thickness range of 0.05 μm to 0.3 μm, preferably in a thickness range of 0.05 μm to 0.3 μm After forming, a high-quality GaN channel layer 407 is formed in a thickness range of 0.05 μm to 1 μm, preferably in a range of 0.05 μm to 0.5 μm.

The thickness range of the GaN channel layer 406 is determined according to design conditions of an FET or RF HEMT electronic device. A high-quality AlN space layer 408 having a thickness of less than 50 Å is formed on the GaN channel layer 407. Stress is caused by a discontinuous difference in energy band gap between the AlN space layer 408 and the GaN channel layer 406. As a result, a two-dimensional gas (2DEG) layer 407 having a high carrier electron concentration and high mobility is formed at the interface, and therefore, the GaN channel layer 406 requires high quality crystallinity with maximum suppression of crystal defects. In addition, the AlN space layer 408 having a thin thickness is also required to have good crystallinity.

After forming the AlN space layer 408, an Al _c Ga _1-c N barrier layer 409 having a thickness ranging from 100 Å to 1000 Å, preferably having a thickness ranging from 100 to 500 Å is formed. At this time, the Al composition of the Al _c Ga _1-c N barrier layer 409 is 20 to 35%, preferably within the range of 25 to 30%. After that, the exposed Al _c Ga _1-c N barrier layer 409 is easily combined with oxygen in the air with priority to the dangling bond between Al and Ga, thereby forming a thin layer of 20 Å or less such as Al _x O _y and Ga _x O _y . Since native oxide is formed, a nitride semiconductor such as GaN, AlGaN, Al(In)N, or a dielectric insulating film such as Si _x N _y is formed to protect the surface. The surface protection layer and the electrode contact layer 410 using nitride semiconductors such as GaN, AlGaN, Al(In)N, etc. may be doped or not doped with n or p-type impurity, and may have a thickness of 30 Å to 1000 Å. Range is preferred. In addition, the Si _x N _y dielectric insulating film preferably has a thickness of 1000 to 3000 Å using semiconductor equipment such as in-situ or MOCVD, CVD, Sputter, and ALD within MOCVD equipment. In addition, an RF HEMT electronic device having an AlGaN/GaN heterojunction structure in which an n-Al _c Ga _{1-c N} electron supply layer doped with a Si n-type impurity is formed on the Al _c Ga 1-c N barrier layer is provided. .

Referring to FIG. 4, a semi-insulating Al _y Ga _{1-y N having a structure of an Al x Ga 1-x} N strain matching layer 402, an Al _{y Ga 1 -} y N support layer 403, and an Acceptor-H complex distribution The Al composition (content) of each of the layer 404, the Al _a Ga _1-a N electron confinement layer 406 and the Al _c Ga _1-c N barrier layer 409 is as follows. The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer (404) is lower than that of the lower Al _y Ga _1-y N strain matching layer 402 (x>y), and the Al _a Ga formed on the upper _1-a N lower than the electron confinement layer 405 (a>y), Al _c Ga _1-c N lower than the barrier layer 409 (c>y), and also Al _a Ga _1-a N electron confinement layer The Al composition of (405) is equal to or less than (a≤x) than the upper Al _x Ga _1-x N strain matching layer 402 grown in c-axis on the same plane, and the upper Al _c Ga _1-c N A high frequency (RF) high electron mobility transistor comprising a barrier layer (409) equal to or higher than (a≧c) is provided.

5 is an embodiment of the present invention, a support part 300 including an AlN lattice matching layer having a three-dimensional structure in a curved shape from an etched lower surface to an unetched upper surface in a regular arrangement on a substrate, and an insulating part (200) and Ep of the AlGaN/GaN heterojunction RF HEMT electronic device of the driver 100. A cross section 20 of the structure is shown. In the AlN lattice matching layer having a three-dimensional structure, the area of the lower surface is larger than the area of the upper surface. In addition, the growth conditions of the individual layers constituting the support part 300, the insulating part 200, and the driving part 100 are the same as those described above with reference to FIG.

Referring to FIG. 5 , an Epi-Wafer structure for a HEMT electronic device having an AlGaN/GaN heterojunction structure having a three-dimensional structure will be described in detail. It consists of a support part 300 having a three-dimensional structure formed on the upper part of the substrate, an insulating part 200 formed on the upper part of the support part, and a driving part 100 formed on the upper part of the insulating part and controlling the 2DEG electron concentration and mobility. The support having a three-dimensional structure includes an AlN lattice matching layer 501 having a three-dimensional structure in a curved shape from the etched lower surface to the unetched upper surface in a regular arrangement on the substrate, and the AlN lattice matching layer of the primary three-dimensional structure. (501) AlN lattice matching layer 502 formed by mixing vertical and horizontal directions, Al _x Ga _1-x N strain (stress) formed on top of the AlN lattice matching layer formed by mixing vertical and horizontal directions It consists of a matching layer 503 and an Al _y Ga _1-y N support layer 504 formed on the Al _x Ga _1-x N strain (stress) matching layer 503 .

In addition, the insulating part 200 is a semi-insulating Al _y Ga _1-y N layer 505 having an Acceptor-H complex distribution structure having a high resistance value of ~ MΩ or more, and the driver 100 is the semi-insulating An Al _a Ga _1-a N electron confinement layer 506 formed on the Al _y Ga _1- y N layer 505, and an Al _b Ga formed on the Al _a Ga _1-a N electron confinement layer 506 _1-b N channel layer 507, the Al _b Ga _1-b AlN space layer 509 formed on the N channel layer 507, Al _c Ga _1- b formed on the AlN space layer 509 It consists of a _cN barrier layer 510, and a surface protection layer and an electrode contact layer 511 formed on the Al _c Ga _1-c N barrier layer 510. And AlGaN / GaN including a two-dimensional electron gas (2DEG) layer 508 having high electron concentration and mobility at the interface between the AlN space layer 509 formed on the upper part and the Al _b Ga _1-b N channel layer formed on the lower part. A HEMT electronic device having a heterojunction structure is provided.

Referring to FIG. 5, the AlN lattice matching layer 502 formed by mixing the vertical and horizontal directions has a growth rate in the horizontal direction at least twice as fast as the growth rate in the vertical direction, and the horizontal and vertical directions are mixed at the same time. growth, and the growth of the three-dimensional structure having the lower/side/upper portions takes precedence in the horizontal direction. In addition, RF HEMT having a three-dimensional AlGaN / GaN heterojunction structure including an AlN lattice matching layer 502 of a plane parallel to the growth surface of the substrate 500 by fusion of the three-dimensional structure having the lower / side / upper part An electronic device is provided.

Referring to FIG. 5, the AlN lattice matching layer 501 having a three-dimensional structure having a bottom/side/top has a lower area larger than an upper area, and a side surface has a curved three-dimensional structure from the bottom to the top, and the three-dimensional structure An RF HET electronic device having an AlGaN/GaN heterojunction structure including two vertical growth directions on a top surface and a bottom surface without a three-dimensional structure and a horizontal growth direction on the side of a three-dimensional structure.

6 shows an AlN lattice matching layer 601 having a primary three-dimensional structure of a curved surface from an etched lower surface to an unetched upper surface in a regular arrangement on an upper surface of a substrate 600 as an embodiment of the present invention. The support part 300 including the AlN lattice matching layer 602A of the secondary three-dimensional structure grown in the same shape on the upper part of the AlN lattice matching layer 601 of the secondary three-dimensional structure, the insulating part 200, and the driving part 100 Ep of AlGaN/GaN heterojunction RF HEMT electronic device. A cross-section 30 of the structure is shown.

In addition, the area of the AlN lattice matching layer 601 of the primary three-dimensional structure is smaller than that of the AlN lattice matching layer 602 of the secondary three-dimensional structure, and the area of the lower surface of the three-dimensional structure is larger than the area of the upper surface. . In addition, the growth conditions of the individual layers constituting the support part 300, the insulating part 200, and the driving part 100 are the same as those described above with reference to FIG.

Referring to FIG. 6 , in a HEMT electronic device having an AlGaN/GaN heterojunction structure having a three-dimensional structure, a support part 300 having a three-dimensional structure formed on a substrate and an insulation formed on the support part 300 having the three-dimensional structure It is composed of a part 200 and a driving part 300 formed on the insulating part. In addition, the support part 300 having the three-dimensional structure includes an AlN lattice matching layer 601 having a primary three-dimensional structure of the bottom / side / top in a regular arrangement on the substrate 600, and AlN of the primary three-dimensional structure It consists of an AlN lattice matching layer 602 having a secondary three-dimensional structure formed by mixing vertical and horizontal directions on top of the lattice matching layer 601, and having a secondary three-dimensional structure formed by mixing the vertical and horizontal directions. Al _x Ga _1-x N strain (stress) matching layer 603 formed on top of the AlN lattice matching layer 602 and mixed in the vertical and horizontal directions Al _x formed in the mixed vertical and horizontal directions It consists of an Al _y Ga _1-y N support layer 604 formed on the Ga _1-x N strain (stress) matching layer 603.

In addition, the insulating part 200 is a semi-insulating Al _y Ga _1-y N layer 605 having an Acceptor-H complex distribution structure having a high resistance value of ~ MΩ or more, and the driver 100 is the semi-insulating An Al _a Ga _1-a N electron confinement layer 606 formed on the Al _y Ga _1-y N layer 605, and an Al _b Ga formed on the Al _a Ga _1-a N electron confinement layer 606 _1-b N channel layer 607, the Al _b Ga _1-b AlN space layer 609 formed on the N channel layer 607, Al _c Ga _1- b formed on the AlN space layer 609 It is composed of a _c N barrier layer 610, a surface protection layer and an electrode contact layer 611 formed on the Al _c Ga _1-c N barrier layer, and an AlN space layer 509 formed on the top and a bottom layer formed on the bottom. A HEMT electronic device having an AlGaN/GaN heterojunction structure including a 2DEG layer 608 at an Al _b Ga _1-b N channel layer interface is provided.

Referring to FIG. 6 , the AlN lattice matching layer 602 having a secondary three-dimensional structure having lower/side/upper portions has a horizontal growth rate at least twice as fast as a vertical growth rate, and horizontal and vertical growth rates. mixed and run concurrently. In addition, an RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure including growth in the horizontal direction is given priority in the three-dimensional structure having the bottom / side / top.

Referring to FIG. 6, in the AlN lattice matching layers 601/602 of primary and secondary three-dimensional structures having lower/side/upper portions, the area of the lower portion is larger than the area of the upper portion, and the side surfaces extend from the bottom to the top. It is composed of a curved three-dimensional structure. In addition, an RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure including two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure and a horizontal growth direction on the side of the three-dimensional structure do.

Referring to FIG. 6, the AlGaN strain matching layer 603 formed by mixing the vertical and horizontal directions has a growth rate in the horizontal direction at least three times faster than the growth rate in the vertical direction, and the horizontal and vertical directions are mixed at the same time. , and growth of the three-dimensional structure having the lower/side/upper portions is given priority in the horizontal direction. In addition, RF HEMT having a three-dimensional AlGaN / GaN heterojunction structure including an AlGaN strain matching layer 603 of a plane parallel to the growth surface of the substrate 600 by fusing the three-dimensional structure having the bottom / side / top part An electronic device is provided.

FIG. 7 shows an AlN lattice matching layer 701 having a primary three-dimensional structure of a curved surface from an etched lower surface to an unetched upper surface in a regular arrangement on a substrate 700 as an embodiment of the present invention. A secondary three-dimensional AlN lattice matching layer 702 grown in the same shape on top of the AlN lattice matching layer 701 with a secondary three-dimensional structure, and an AlN lattice matching layer 702 with a secondary three-dimensional structure grown in the same shape on top Support part 300 including a three-dimensional AlGaN strain matching layer 703, an AlGaN support layer 704 formed on top of the three-dimensional AlGaN strain matching layer 703 and formed in a mixture of vertical and horizontal directions, insulation Ep of the AlGaN/GaN heterojunction RF HEMT electronic device of the unit 200 and the driving unit 100. A cross-section 40 of the structure is shown.

In addition, the area of the three-dimensional AlGaN strain matching layer 703 is larger than the area of the secondary three-dimensional AlN lattice matching layer 602, and the area of the lower surface of the three-dimensional structure is larger than the area of the upper surface. In addition, the growth conditions of the individual layers constituting the support part 300, the insulation part 200, and the driving part 100 are the same as those described above with reference to FIG.

Referring to FIG. 7 , in a HEMT electronic device having an AlGaN/GaN heterojunction structure having a three-dimensional structure, a support part 300 having a three-dimensional structure formed on a substrate 700 and an upper portion of the support part 300 having the three-dimensional structure Consisting of an insulating part 200 formed and a driving part 100 formed on top of the insulating part, the support part 300 having the three-dimensional structure has a regular arrangement of bottom/side/top parts on the top of the substrate 700. An AlN lattice matching layer 701 having a primary three-dimensional structure, and an AlN lattice matching layer 702 having a secondary three-dimensional structure having lower/side/upper portions formed on the AlN lattice matching layer 701 having a primary three-dimensional structure , It consists of an AlGaN strain matching layer 703 having a three-dimensional structure of lower / side / upper part on top of the AlN lattice matching layer of the secondary three-dimensional structure.

In addition, the three-dimensional area of the three-dimensional structure of the Al _x Ga _1-x N strain matching 703 is larger than that of the secondary AlN lattice matching layer 702, and the Al _x Ga _1-x N strain matching having the three-dimensional structure An Al _y Ga _1-y N support layer 704 having a three-dimensional structure formed by mixing vertical and horizontal directions on top of the layer 703 is included.

The insulating part 200 is a semi-insulating Al _y Ga _1-y N layer 705 having an Acceptor-H complex distribution structure having a high resistance value of ~MΩ or more, and the driving part 100 is the semi-insulating Al _y An Al _a Ga _{1- a N electron confinement layer 706 formed on the Ga 1-} y N layer 705, and an Al _b Ga _1-a N electron confinement layer 706 formed on the Al _a Ga 1-a N electron confinement layer _{706. b} N channel layer 707, the Al _b Ga _1-b AlN space layer 709 formed on the N channel layer 707, Al _c Ga _1-c N formed on the AlN space layer 709 It consists of a barrier layer 710, a surface protection layer and an electrode contact layer 711 formed on the Al _c Ga _1-c N barrier layer 710, and an AlN space layer 709 formed on the upper portion and a lower portion thereof. Provided is a HEMT electronic device having an AlGaN/GaN heterojunction structure including a 2DEG layer 708 at an Al _b Ga _1-b N channel layer interface formed on.

Referring to FIG. 7 , the secondary AlN lattice matching layer 702 formed by mixing the vertical and horizontal directions has a growth rate in the horizontal direction that is at least twice as fast as the growth rate in the vertical direction, and the growth rate in the horizontal direction and the vertical direction are mixed. to provide an RF HEMT electronic device having an AlGaN/GaN heterojunction structure of a three-dimensional structure including that growth is given priority in a horizontal direction in the three-dimensional structure having the lower/side/upper portion. In addition, in the first and second AlN lattice matching layers 701 and 702 having the lower/side/upper three-dimensional structure, the lower area is larger than the upper area, and the side surface has a curved three-dimensional structure from the bottom to the top. am. In addition, an RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure including two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure and a horizontal growth direction on the side of the three-dimensional structure is provided. do.

Referring to FIG. 7, the AlN strain matching layer 701 having the three-dimensional structure of the bottom/side/top has a lower area larger than the upper area, and the side surface has a curved three-dimensional structure from the bottom to the top, and the three-dimensional structure Two vertical growth directions on the top surface and the bottom surface without a three-dimensional structure and a horizontal growth direction on the side of the three-dimensional structure, and the secondary solid area of the Al _x Ga _1-x N strain matching layer 703 is the AlN lattice matching layer An RF HET electronic device having a three-dimensional AlGaN/GaN heterojunction structure including a three-dimensional area larger than that of (702) is provided.

Referring to FIG. 7, the Al _y Ga _1-y N support layer 704 formed by mixing the vertical and horizontal directions has a growth rate in the horizontal direction at least twice as fast as the growth rate in the vertical direction, and the horizontal and vertical directions are mixed and progress simultaneously, and growth of the three-dimensional structure having the bottom/side/top is given priority in the horizontal direction. In addition, an RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure including an AlGaN support layer 704 of a plane parallel to the growth surface of the substrate is provided by fusing the three-dimensional structure having the lower / side / upper part .

8, as another embodiment of the present invention, an AlN lattice matching layer 801 having a primary three-dimensional structure having a curved surface from an etched lower surface to an unetched upper surface in a regular arrangement on the upper surface of a substrate 800; A secondary three-dimensional AlN lattice matching layer 802, a secondary three-dimensional AlN lattice matching layer 802, a three-dimensional AlGaN strain matching layer 803, and a three-dimensional AlGaN support layer 804. A heterogeneous AlGaN/GaN composed of a support part 300 including a semi-insulating AlGaN layer 804 and an insulating part 200 including a semi-insulating AlGaN layer 805 formed by mixing the vertical and horizontal directions, and the driver 100 Ep. of Junctioned RF HEMT Electronics. A cross-section 50 of the structure is shown. Growth conditions of the individual layers constituting the support part 300, the insulating part 200, and the driving part 100 are the same as those described above with reference to FIG.

Referring to FIG. 8 , in a HEMT electronic device having an AlGaN/GaN heterojunction structure having a three-dimensional structure, a support part 300 having a three-dimensional structure formed on a substrate 800 is placed on top of the support part 300 having the three-dimensional structure. It consists of an insulating part 200 formed and a driving part 100 formed on the insulating part 200. In addition, the support part 300 having the three-dimensional structure includes an AlN lattice matching layer 801 having a primary three-dimensional structure of the bottom / side / top in a regular arrangement on the substrate 800, and AlN having the primary three-dimensional structure. An AlN lattice matching layer 802 having a secondary three-dimensional structure formed in the same shape on top of the lattice matching layer 801 and having bottom/side/top portions, and the same shape on the top of the AlN lattice matching layer 802 with the secondary three-dimensional structure. Is formed of the same shape on the Al _x Ga _1-x N strain matching layer 803 having a lower / side / upper three-dimensional structure, and the Al _x Ga _1-x N strain matching layer 803 having the three-dimensional structure and an Al _y Ga _1-y N support layer 804 having a three-dimensional structure of bottom/side/top.

In addition, the insulating portion 200 is formed on top of the Al _y Ga _1-y N support layer 804 having the three-dimensional structure, growth in the horizontal direction and vertical direction is mixed, and has a high resistance value of ~ MΩ or more A semi-insulating Al _y Ga _1-y N layer 805 having an Acceptor-H complex distribution structure, and the driver 300 is formed on the semi-insulating Al _y Ga _1-y N layer 805 Al _a Ga _1-a N electron confinement layer 806, the Al _a Ga _1-a N electron confinement layer 806 formed on the Al _b Ga _1-b N channel layer 807, the Al _b Ga _1-b An AlN space layer 809 formed over the N channel layer 807, an Al _c Ga _1-c N barrier layer 810 formed over the AlN space layer 809, and the Al _c Ga _1-c N It consists of a surface protection layer and an electrode contact layer 811 formed on the barrier layer, and the 2DEG layer 808 at the interface between the AlN space layer 809 formed on the top and the Al _b Ga _1-b N channel layer formed on the bottom It provides a HEMT electronic device having an AlGaN / GaN heterojunction structure including.

Referring to FIG. 8, the secondary AlN lattice matching layer 802 formed by mixing the vertical and horizontal directions has a growth rate in the horizontal direction that is at least three times faster than the growth rate in the vertical direction, and the growth rate in the horizontal direction and the vertical direction are mixed. and proceeds simultaneously, and provides an RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure including growth in the horizontal direction in the three-dimensional structure having the bottom / side / top.

Referring to FIG. 8 , the secondary AlN lattice matching layer 802 having a bottom/side/top three-dimensional structure has a lower area larger than an upper area, and the side surface has a curved three-dimensional structure from the bottom to the top. An RF HET electronic device having a three-dimensional AlGaN/GaN heterojunction structure including two vertical growth directions on the upper surface of the structure and a lower surface without a three-dimensional structure and a horizontal growth direction on the side of the three-dimensional structure.

Substrate: 400, 500, 600, 700, 800 AlN lattice matching layer: 401, 501, 601, 701, 801
Three-dimensional AlN lattice matching layer: 501, 601/602, 701/702, 801/802
Al _x Ga _1-x N strain matching layer: 402, 503, 603
Three-dimensional Al _x Ga _1-x N strain matching layer: 703, 803 Al _y Ga _1-y N support layer: 403, 504, 604, 704
Three-dimensional Al _y Ga _1-y N support layer:804
Semi-insulating Al _y Ga _1-y N support layer having an Acceptor-H complex distribution structure: 404, 505, 605, 705, 805
Al _a Ga _1-a N electron confinement layer: 405, 506, 606, 706, 806 Al _b Ga _1-b N channel layer: 406, 507, 607, 707, 807
AlN space layer: 408, 509, 609, 709, 809 Al _c Ga _1-c N barrier layer: 409,510, 610, 710, 810
Surface protective layer and electrode contact layer: 410, 511, 611, 711, 811

Claims (58)

in HEMT electronic devices having an AlGaN/GaN heterojunction structure;
A support 300 formed on the substrate to control lattice constants and strain (stress);
An insulating part 200 formed on the support part and controlling leakage current and breakdown voltage;
A driving unit 100 formed on the insulating unit and controlling 2DEG electron concentration and mobility,
The support part 300;
An AlN lattice matching layer 401 formed on the substrate,
An Al _y Ga _1-y N strain (stress) matching layer 402 formed on the AlN lattice matching layer;
It consists of an AlGaN support layer 403 formed on top of the Al _y Ga _1-y N strain (stress) matching layer,
The insulating part 200;
It is a semi-insulating Al _y Ga _1-y N layer 404 having a structure of Acceptor-H complex distribution with a high resistance value of ~MΩ or more,
The drive unit 100;
An Al _a Ga _1-a N (405) electron confinement layer 405 formed on the semi-insulating Al _y Ga _1-y N layer 404;
An AlGaN channel layer 406 formed on the Al _a Ga _1-a N electron confinement layer 405;
An AlN space layer 408 formed on the AlGaN channel layer,
An Al _c Ga _1-c N barrier layer 409 formed on the AlN space layer 408,
A surface protection layer and an electrode contact layer 410 formed on the Al _c Ga _1-c N barrier layer 409,
Alternatively, an n-AlGaN electron supply layer on top of the Al _c Ga _1-c N barrier layer 409;
A HEMT electronic device having an AlGaN / GaN heterojunction structure comprising. In claim 1,
The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer 404 is;
It is lower than the Al _y Ga _1-y N strain matching layer 402 formed at the bottom (x>y),
lower than that of the Al _a Ga _1-a N electron confinement layer 405 formed thereon (a>y),
lower than the Al _c Ga _1-c N barrier layer 409 formed thereon (c>y),
The Al composition of the Al _a Ga _1-a N electron confinement layer 405 is;
Less than or equal to the upper Al _x Ga _1-x N strain matching layer 402 (a≤x),
The same or higher (a≥c) than the upper Al _c Ga _1-c N barrier layer 409;,
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
Under the high-quality crystalline Al _y Ga _1-y N support layer 403 and the semi-insulating Al _y Ga _1-y N layer 404,
An AlN lattice matching layer 401 for lattice matching with the substrate is formed,
an Al _x Ga _1-x N layer 402 which is a strain matching layer of the AlN lattice matching layer 401, the Al _y Ga _1-y N support layer 403;
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
The semi-insulating Al _y Ga _1-y N layer 404 having a high resistance value of ~MΩ or more;
It has a structure with Acceptor-H complex distribution,
It is composed of acceptor impurities such as Mg, Zn, C, Ir, and Fe.
A high frequency (RF) high electron mobility transistor with an impurity concentration in the range of 10 ¹⁹ to 10 ²¹ /cm ³ . In claim 1,
The surface protection layer and the electrode contact layer 410;
It is formed by growing in the same c-axis direction on top of the semi-insulating Al _y Ga _1-y N layer 404,
Surface protection of the Al _c Ga _1-c N barrier layer 409 formed on the lower side,
or Schottky and Ohmic electrode contacts,
composed of GaN, AlGaN, and Al(In)N containing no impurities;
Composed of GaN, AlGaN, and Al(In)N containing acceptor impurities,
In addition, the Si _x N _y insulating film is formed by in-situ and ex-situ methods;
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
Based on the semi-insulating Al _y Ga _1-y N layer 404 formed in the same c-axis growth direction;
Has a discontinuous Acceptor-H complex distribution at the interface with the Al _y Ga _1-y N support layer 403 formed on the lower side,
In addition, a discontinuous Acceptor-H complex distribution is also observed at the interface with the Al _a Ga _1-a N electron confinement layer 405 formed thereon;
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
A semi-insulating Al _y Ga _1-y N layer 404 having a high resistance value of ~MΩ or more;
An Al _b Ga _1-b N channel layer 406 formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer 404;
A two-dimensional gas (2DEG) layer 407 having a high carrier electron concentration and mobility at the interface with the AlN space layer 408 formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer 406 )second ;
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
A semi-insulating Al _y Ga _1-y N layer 404 having a high resistance value of ~MΩ or more;
An Al _b Ga _1-b N channel layer 406 formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer 404;
On top of the Al _c Ga _1-c N barrier layer 409 formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer 406,
a surface protection layer 410 composed of a nitride semiconductor and an insulating film;
A field effect transistor comprising: In claim 1,
As a semi-insulating Al _y Ga _1-y N layer 404 having a high resistance value of ~ MΩ or more and formed in the growth direction of the c-axis,
Semiconductor materials including SiC, Sapphire, Silicon, etc. are used as substrates.
High frequency (RF) high electron mobility transistors and field effect transistors. in a HEMT electronic device having an AlGaN/GaN heterojunction structure having a three-dimensional structure;
A support 300 having a three-dimensional structure formed on the substrate;
An insulating part 200 formed on the support part,
A driving unit 300 formed on the insulating unit and controlling 2DEG electron concentration and mobility,
It consists of a drive unit 100,
The support 300 having the three-dimensional structure;
An AlN lattice matching layer 501 having a three-dimensional structure of bottom / side / top in a regular arrangement on the substrate,
An AlN lattice matching layer 502 formed by mixing vertical and horizontal directions on the top of the AlN lattice matching layer 501 of the primary three-dimensional structure,
An Al _x Ga _1-x N strain (stress) matching layer 503 formed on top of the AlN lattice matching layer formed by mixing the vertical and horizontal directions,
An Al _y Ga _1-y N support layer 504 formed on the Al _x Ga _1-x N strain (stress) matching layer,
The insulating part 200;
A semi-insulating Al _y Ga _1-y N layer 505 having an Acceptor-H complex distribution structure with a high resistance value of ~MΩ or more,
The drive unit 100;
An Al _a Ga _1-a N electron confinement layer 506 formed on the semi-insulating Al _y Ga _1-y N layer 505;
An Al _b Ga _1- b N channel layer 507 formed on the Al _a Ga _1-a N electron confinement layer 506;
an AlN space layer 509 formed on the Al _b Ga _1-b N channel layer 507;
An Al _c Ga _1-c N barrier layer 510 formed on the AlN space layer 509,
a surface protection layer and an electrode contact layer 511 formed on the Al _c Ga _1-c N barrier layer 510;
2DEG layer 508 at the interface between the AlN space layer 509 formed on the upper part and the Al _b Ga _1-b N channel layer formed on the lower part;
A HEMT electronic device having an AlGaN / GaN heterojunction structure comprising. In claim 10,
The AlN lattice matching layer 502 formed by mixing the vertical and horizontal directions,
The growth rate in the horizontal direction is at least twice as fast as the growth rate in the vertical direction,
The horizontal and vertical directions are mixed and progressed simultaneously,
The growth of the three-dimensional structure having the bottom / side / top is given priority in the horizontal direction,
The three-dimensional structure having the lower/side/upper portions is fused to form an AlN lattice matching layer 502 of a plane parallel to the growth surface of the substrate.
An RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure including. In claim 10,
The three-dimensional AlN lattice matching layer 501 having the lower/side/upper portions;
The lower area is larger than the upper area,
The side is a three-dimensional structure of a curved surface from the bottom to the top,
In addition, two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure,
horizontal growth direction in terms of the three-dimensional structure;
An RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure comprising: In claim 10,
The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer 504 is;
It is lower than the Al _y Ga _1-y N strain matching layer 503 formed at the bottom (x>y),
lower than that of the Al _a Ga _1-a N electron confinement layer 506 formed thereon (a>y),
Lower than the Al _c Ga _1-c N barrier layer 510 formed on the top (c>y),
The Al composition of the Al _a Ga _1-a N electron confinement layer 506 is;
Less than or equal to the upper Al _x Ga _1-x N strain matching layer 503 (a≤x),
The same or higher (a≥c) than the upper Al _c Ga _1-c N barrier layer 510;,
A high frequency (RF) high electron mobility transistor comprising: In claim 10,
Under the high-quality crystalline Al _y Ga _1-y N support layer 504 and the semi-insulating Al _y Ga _1-y N layer 505,
An AlN lattice matching layer 502 for lattice matching with the substrate is formed,
an Al _x Ga _1-x N layer 503 which is a strain matching layer of the AlN lattice matching layer 401, the Al _y Ga _1-y N support layer 504;
A high frequency (RF) high electron mobility transistor comprising: In claim 10,
The support part 300 having a three-dimensional structure,
The semi-insulating Al _y Ga _1-y N layer 505 having a high resistance value of ~MΩ or more;
It has a structure with Acceptor-H complex distribution,
It is composed of acceptor impurities such as Mg, Zn, C, Ir, and Fe.
A high frequency (RF) high electron mobility transistor with an impurity concentration in the range of 10 ¹⁹ to 10 ²¹ /cm ³ . In claim 10,
the surface protection layer and the electrode contact layer 511;
Formed by growing in the same c-axis direction on top of the semi-insulating Al _y Ga _1-y N layer 505,
Surface protection of the Al _c Ga _1-c N barrier layer 510 formed on the lower side,
or Schottky and Ohmic electrode contacts,
composed of GaN, AlGaN, and Al(In)N containing no impurities;
Composed of GaN, AlGaN, and Al(In)N containing acceptor impurities,
In addition, the Si _x N _y insulating film is formed by in-situ and ex-situ methods;
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
The support part 300 having a three-dimensional structure,
Based on the formed semi-insulating Al _y Ga _1-y N layer 505;
Has a discontinuous Acceptor-H complex distribution at the interface with the Al _y Ga _1-y N support layer 504 formed on the lower side,
In addition, a discontinuous Acceptor-H complex distribution is also observed at the interface with the Al _a Ga _1-a N electron confinement layer 506 formed thereon;
A high frequency (RF) high electron mobility transistor comprising: In claim 10,
The support part 300 having a three-dimensional structure,
A semi-insulating Al _y Ga _1-y N layer 505 having a high resistance value of ~MΩ or more;
An Al _b Ga _1-b N channel layer 507 formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer 505;
A two-dimensional gas (2DEG) layer 508 having a high carrier electron concentration and mobility at the interface with the AlN space layer 409 formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer 507 )second ;
A high frequency (RF) high electron mobility transistor comprising: In claim 10,
The support part 300 having a three-dimensional structure,
A semi-insulating Al _y Ga _1-y N layer 505 having a high resistance value of ~MΩ or more;
An Al _b Ga _1-b N channel layer 507 formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer 505;
On top of the Al _c Ga _1-c N barrier layer 510 formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer 507,
a surface protective layer 511 composed of a nitride semiconductor and an insulating film;
A field effect transistor comprising: In claim 10,
The support part 300 having a three-dimensional structure,
As a semi-insulating Al _y Ga _1-y N layer 505 having a high resistance value of ~ MΩ or more and formed in the growth direction of the c-axis,
Semiconductor materials including SiC, Sapphire, Silicon, etc. are used as substrates.
High frequency (RF) high electron mobility transistors and field effect transistors. in a HEMT electronic device having an AlGaN/GaN heterojunction structure having a three-dimensional structure;
A support 300 having a three-dimensional structure formed on the substrate;
An insulating part 200 formed on the support part having the three-dimensional structure,
Consisting of a driving unit 300 formed on the upper part of the insulating unit,
The support having the three-dimensional structure (100);
An AlN lattice matching layer 601 having a primary three-dimensional structure of the bottom / side / top in a regular arrangement on the substrate,
An AlN lattice matching layer 602 having a secondary three-dimensional structure formed by mixing vertical and horizontal directions on the top of the AlN lattice matching layer 601 of the primary three-dimensional structure;
Formed on top of the AlN lattice matching layer having a secondary three-dimensional structure formed by mixing the vertical and horizontal directions,
Al _x Ga _1-x N strain (stress) matching layer 603 formed in a mixture of vertical and horizontal directions,
An Al _y Ga _1-y N support layer 604 formed on top of the Al _x Ga _1- x N strain (stress) matching layer formed by mixing the vertical and horizontal directions;
The insulating part 200;
A semi-insulating Al _y Ga _1-y N layer (605) having an Acceptor-H complex distribution structure with a high resistance value of ~MΩ or more,
The drive unit 100;
an Al _a Ga _1-a N electron confining layer 606 formed on the semi-insulating Al _y Ga _1-y N layer 605;
An Al _b Ga _1- b N channel layer 607 formed on the Al _a Ga _1-a N electron confinement layer 606;
An AlN space layer 609 formed on the Al _b Ga _1-b N channel layer 607;
An Al _c Ga _1-c N barrier layer 610 formed on the AlN space layer 609,
a surface protection layer and an electrode contact layer 611 formed on the Al _c Ga _1-c N barrier layer;
2DEG layer 608 at the interface between the AlN space layer 509 formed on the upper part and the Al _b Ga _1-b N channel layer formed on the lower part;
A HEMT electronic device having an AlGaN / GaN heterojunction structure comprising. In claim 30 ,
The AlN lattice matching layer 602 having a secondary three-dimensional structure having the lower/side/upper portions;
The growth rate in the horizontal direction is at least twice as fast as the growth rate in the vertical direction,
The horizontal and vertical directions are mixed and progressed simultaneously,
In the three-dimensional structure having the bottom / side / top, growth in the horizontal direction is given priority;
An RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure including. In claim 30 ,
AlN lattice matching layers 601/602 having primary and secondary three-dimensional structures having the lower/side/upper portions;
The lower area is larger than the upper area,
The side is a three-dimensional structure of a curved surface from the bottom to the top,
In addition, two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure,
horizontal growth direction in terms of the three-dimensional structure;
An RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure comprising: In claim 30 ,
The AlGaN strain matching layer 603 formed by mixing the vertical and horizontal directions,
The growth rate in the horizontal direction is at least twice as fast as the growth rate in the vertical direction,
The horizontal and vertical directions are mixed and progressed simultaneously,
The growth of the three-dimensional structure having the bottom / side / top is given priority in the horizontal direction,
AlGaN strain matching layer 603 of a plane parallel to the growth surface of the substrate by fusion of the three-dimensional structure having the bottom / side / top part;
An RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure including. In claim 30,
The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer 605 is;
It is lower than the Al _y Ga _1-y N strain matching layer 603 formed at the bottom (x>y),
lower than that of the Al _a Ga _1-a N electron confinement layer 606 formed thereon (a>y),
Lower than the Al _c Ga _1-c N barrier layer 610 formed on the top (c>y),
The Al composition of the Al _a Ga _1-a N electron confinement layer 606 is;
Less than or equal to the upper Al _x Ga _1-x N strain matching layer 603 (a≤x),
The same or higher (a≥c) than the upper Al _c Ga _1-c N barrier layer 610;,
A high frequency (RF) high electron mobility transistor comprising: In claim 30,
Under the high-quality crystalline Al _y Ga _1-y N support layer 604 and the semi-insulating Al _y Ga _1-y N layer 605,
An AlN lattice matching layer 601 for lattice matching with the substrate is formed,
an Al _x Ga _1-x N layer 603 which is a strain matching layer of the AlN lattice matching layer 601, the Al _y Ga _1-y N support layer 604;
A high frequency (RF) high electron mobility transistor comprising: In claim 30,
The support part 300 having a three-dimensional structure,
The semi-insulating Al _y Ga _1-y N layer 605 having a high resistance value of ~MΩ or more;
It has a structure with Acceptor-H complex distribution,
It is composed of acceptor impurities such as Mg, Zn, C, Ir, and Fe.
A high frequency (RF) high electron mobility transistor with an impurity concentration in the range of 10 ¹⁹ to 10 ²¹ /cm ³ . In claim 30,
the surface protection layer and the electrode contact layer 611;
Formed by growing in the same c-axis direction on top of the semi-insulating Al _y Ga _1-y N layer 605,
Surface protection of the Al _c Ga _1-c N barrier layer 610 formed on the lower side,
or Schottky and Ohmic electrode contacts,
composed of GaN, AlGaN, and Al(In)N containing no impurities;
Composed of GaN, AlGaN, and Al(In)N containing acceptor impurities,
In addition, the Si _x N _y insulating film is formed by in-situ and ex-situ methods;
A high frequency (RF) high electron mobility transistor comprising: In claim 30,
The support part 300 having a three-dimensional structure,
Based on the formed semi-insulating Al _y Ga _1-y N layer 605;
Has a discontinuous Acceptor-H complex distribution at the interface with the Al _y Ga _1-y N support layer 604 formed at the bottom,
In addition, a discontinuous Acceptor-H complex distribution is observed at the interface with the Al _a Ga _1-a N electron confinement layer 606 formed thereon;
A high frequency (RF) high electron mobility transistor comprising: In claim 30,
The support part 300 having a three-dimensional structure,
A semi-insulating Al _y Ga _1-y N layer 605 having a high resistance value of ~MΩ or more;
An Al _b Ga _1-b N channel layer 607 formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer 505;
A two-dimensional gas (2DEG) layer (608) having a high carrier electron concentration and mobility at the interface with the AlN space layer (609) formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer (607). )second ;
A high frequency (RF) high electron mobility transistor comprising: In claim 30,
The support part 300 having a three-dimensional structure,
A semi-insulating Al _y Ga _1-y N layer 605 having a high resistance value of ~MΩ or more;
An Al _b Ga _1-b N channel layer 607 formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer 605;
On top of the Al _c Ga _1-c N barrier layer 610 formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer 607,
a surface protective layer 611 composed of a nitride semiconductor and an insulating film;
A field effect transistor comprising: In claim 30,
The support part 300 having a three-dimensional structure,
A semi-insulating Al _y Ga _1-y N layer 605 having a high resistance value of ~MΩ or more and formed in the growth direction of the c-axis,
Semiconductor materials including SiC, Sapphire, Silicon, etc. are used as substrates.
High frequency (RF) high electron mobility transistors and field effect transistors. in a HEMT electronic device having an AlGaN/GaN heterojunction structure having a three-dimensional structure;
A support 300 having a three-dimensional structure formed on the substrate;
An insulating part 200 formed on the support part having the three-dimensional structure,
It consists of a driving unit 100 formed on the upper part of the insulating part,
The support 300 having the three-dimensional structure;
An AlN lattice matching layer 701 having a primary three-dimensional structure of the bottom / side / top in a regular arrangement on the substrate,
An AlN lattice matching layer 702 having a secondary three-dimensional structure having a lower/side/upper portion formed on the upper portion of the AlN lattice matching layer 701 having the primary three-dimensional structure,
An AlGaN strain matching layer 703 having a three-dimensional structure of a bottom / side / top on top of the AlN lattice matching layer of the secondary three-dimensional structure,
In addition, the three-dimensional area of the three-dimensional structure of the Al _x Ga _1-x N strain matching 703 is larger than that of the secondary AlN lattice matching layer 702,
An Al _y Ga _1-y N support layer 704 having a three-dimensional structure formed by mixing vertical and horizontal directions on the Al _x Ga _1-x N strain matching layer 703 having the three-dimensional structure,
The insulating part 200;
A semi-insulating Al _y Ga _1-y N layer 705 having an Acceptor-H complex distribution structure with a high resistance value of ~MΩ or more,
The drive unit 100;
an Al _a Ga _1-a N electron confinement layer 706 formed on the semi-insulating Al _y Ga _1-y N layer 705;
An Al _b Ga _1- b N channel layer 707 formed on the Al _a Ga _1-a N electron confinement layer 706;
An AlN space layer 709 formed on the Al _b Ga _1-b N channel layer 707;
An Al _c Ga _1-c N barrier layer 710 formed on the AlN space layer 709,
a surface protection layer and an electrode contact layer 711 formed on the Al _c Ga _1-c N barrier layer 710;
2DEG layer 708 at the interface between the AlN space layer 709 formed on the upper part and the Al _b Ga _1-b N channel layer formed on the lower part;
A HEMT electronic device having an AlGaN / GaN heterojunction structure comprising a. In claim 42,
The secondary AlN lattice matching layer 702 formed by mixing the vertical and horizontal directions,
The growth rate in the horizontal direction is at least twice as fast as the growth rate in the vertical direction,
The horizontal and vertical directions are mixed and progressed simultaneously,
In the three-dimensional structure having the bottom / side / top, growth in the horizontal direction is given priority;
An RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure including. In claim 42,
The first and second AlN lattice matching layers 701 and 702 having the lower/side/upper three-dimensional structures;
The lower area is larger than the upper area,
The side is a three-dimensional structure of a curved surface from the bottom to the top,
In addition, two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure,
horizontal growth direction in terms of the three-dimensional structure;
An RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure comprising: In claim 42,
The AlN strain matching layer 701 having the three-dimensional structure of the bottom/side/top;
The lower area is larger than the upper area,
The side is a three-dimensional structure of a curved surface from the bottom to the top,
In addition, two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure,
is the horizontal growth direction in terms of the three-dimensional structure,
In addition, the secondary solid area of the Al _x Ga _1-x N strain matching layer 703 is larger than that of the AlN lattice matching layer 702;
An RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure comprising: In claim 42,
The Al _y Ga _1-y N support layer 704 formed by mixing the vertical and horizontal directions,
The growth rate in the horizontal direction is at least twice as fast as the growth rate in the vertical direction,
The horizontal and vertical directions are mixed and progressed simultaneously,
The growth of the three-dimensional structure having the bottom / side / top is given priority in the horizontal direction,
AlGaN support layer of a plane parallel to the growth surface of the substrate in which the three-dimensional structure having the lower/side/upper portions is fused;
An RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure comprising a. In claim 42,
The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer 705 is;
It is lower than the Al _y Ga _1-y N strain matching layer 703 formed at the bottom (x>y),
lower than that of the Al _a Ga _1-a N electron confinement layer 706 formed thereon (a>y),
lower than the Al _c Ga _1-c N barrier layer 710 formed thereon (c>y),
The Al composition of the Al _a Ga _1-a N electron confinement layer 706 is;
Less than or equal to the upper Al _x Ga _1-x N strain matching layer 703 (a≤x),
The same or higher (a≥c) than the upper Al _c Ga _1-c N barrier layer 710;,
A high frequency (RF) high electron mobility transistor comprising: In claim 42,
Under the high-quality crystalline Al _y Ga _1-y N support layer 704 and the semi-insulating Al _y Ga _1-y N layer 705,
An AlN lattice matching layer 701 for lattice matching with the substrate is formed,
an Al _x Ga _1-x N layer 703 which is a strain matching layer of the AlN lattice matching layer 701, the Al _y Ga _1-y N support layer 704;
A high frequency (RF) high electron mobility transistor comprising: In claim 42,
The support part 300 having a three-dimensional structure,
The semi-insulating Al _y Ga _1-y N layer 705 having a high resistance value of ~MΩ or more;
It has a structure with Acceptor-H complex distribution,
It is composed of acceptor impurities such as Mg, Zn, C, Ir, and Fe.
A high frequency (RF) high electron mobility transistor with an impurity concentration in the range of 10 ¹⁹ to 10 ²¹ /cm ³ . In claim 42,
the surface protection layer and the electrode contact layer 711;
Formed by growing in the same c-axis direction on top of the semi-insulating Al _y Ga _1-y N layer 705,
Surface protection of the Al _c Ga _1-c N barrier layer 710 formed on the lower side,
or Schottky and Ohmic electrode contacts,
composed of GaN, AlGaN, and Al(In)N containing no impurities;
Composed of GaN, AlGaN, and Al(In)N containing acceptor impurities,
In addition, the Si _x N _y insulating film is formed by in-situ and ex-situ methods;
A high frequency (RF) high electron mobility transistor comprising: In claim 42,
The support part 300 having a three-dimensional structure,
Based on the formed semi-insulating Al _y Ga _1-y N layer 705;
Has a discontinuous Acceptor-H complex distribution at the interface with the Al _y Ga _1-y N support layer 704 formed on the lower side,
In addition, a discontinuous Acceptor-H complex distribution is also observed at the interface with the Al _a Ga _1-a N electron confinement layer 706 formed thereon;
A high frequency (RF) high electron mobility transistor comprising: In claim 42,
The support part 300 having a three-dimensional structure,
A semi-insulating Al _y Ga _1-y N layer 705 having a high resistance value of ~MΩ or more;
An Al _b Ga _1-b N channel layer 707 formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer 505;
A two-dimensional gas (2DEG) layer 708 having a high carrier electron concentration and mobility at the interface with the AlN space layer 709 formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer 707 )second ;
A high frequency (RF) high electron mobility transistor comprising: In claim 42,
A semi-insulating Al _y Ga _1-y N layer 705 having a high resistance value of ~MΩ or more;
An Al _b Ga _1-b N channel layer 707 formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer 705;
On top of the Al _c Ga _1-c N barrier layer 710 formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer 707,
a surface protective layer 711 composed of a nitride semiconductor and an insulating film;
A field effect transistor comprising: In claim 42,
The support part 300 having a three-dimensional structure,
As a semi-insulating Al _y Ga _1-y N layer 705 having a high resistance value of ~ MΩ or more,
Semiconductor materials including SiC, Sapphire, Silicon, etc. are used as substrates.
High frequency (RF) high electron mobility transistors and field effect transistors. in a HEMT electronic device having an AlGaN/GaN heterojunction structure having a three-dimensional structure;
A support 300 having a three-dimensional structure formed on the substrate;
An insulating part 200 formed on the support part having the three-dimensional structure,
It consists of a driving unit 100 formed on the upper part of the insulating part,
The support 300 having the three-dimensional structure;
An AlN lattice matching layer 801 having a primary three-dimensional structure of the bottom / side / top in a regular arrangement on the substrate;
An AlN lattice matching layer 802 having a secondary three-dimensional structure having a lower/side/upper portion formed on the upper portion of the AlN lattice matching layer 801 having the primary three-dimensional structure,
An Al _x Ga _1-x N strain matching layer 803 having a lower/side/upper three-dimensional structure on top of the AlN lattice matching layer 802 of the secondary three-dimensional structure,
An Al _y Ga _1-y N support layer 804 having a three-dimensional structure of a bottom / side / top on top of the Al _x Ga _1-x N strain matching layer 803 having the three-dimensional structure,
The insulating part 200;
Formed on top of the Al _y Ga _1-y N support layer 804 having the three-dimensional structure,
Horizontal and vertical growth are mixed,
A semi-insulating Al _y Ga _1-y N layer (805) having an Acceptor-H complex distribution structure with a high resistance value of ~MΩ or more,
The drive unit 100;
An Al _a Ga _1-a N electron confining layer 806 formed on the semi-insulating Al _y Ga _1-y N layer 805;
An Al _b Ga _1- b N channel layer 807 formed on the Al _a Ga _1-a N electron confinement layer 806;
An AlN space layer 809 formed on the Al _b Ga _1-b N channel layer 807;
An Al _c Ga _1-c N barrier layer 810 formed on the AlN space layer 809,
A surface protection layer and an electrode contact layer 811 formed on the Al _c Ga _1-c N barrier layer;
2DEG layer 808 at the interface between the AlN space layer 809 formed on the upper side and the Al _b Ga _1-b N channel layer formed on the lower side;
A HEMT electronic device having an AlGaN / GaN heterojunction structure comprising. In claim 55 ,
The secondary AlN lattice matching layer 802 formed by mixing the vertical and horizontal directions,
The growth rate in the horizontal direction is at least twice as fast as the growth rate in the vertical direction,
The horizontal and vertical directions are mixed and progressed simultaneously,
In the three-dimensional structure having the bottom / side / top, growth in the horizontal direction takes precedence;
An RF HEMT electronic device having a three-dimensional AlGaN / GaN heterojunction structure including. In claim 55 ,
The secondary AlN lattice matching layer 802 having the three-dimensional structure of the bottom/side/top;
The lower area is larger than the upper area,
The side is a three-dimensional structure of a curved surface from the bottom to the top,
In addition, two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure,
horizontal growth direction in terms of the three-dimensional structure;
An RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure comprising: In claim 55 ,
The AlN strain matching layer 803 having the three-dimensional structure of the bottom/side/top;
The lower area is larger than the upper area,
The side is a three-dimensional structure of a curved surface from the bottom to the top,
In addition, two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure,
is the horizontal growth direction in terms of the three-dimensional structure,
In addition, the three-dimensional area of the Al _x Ga _1-x N strain matching layer 803 is larger than that of the secondary AlN lattice matching layer 802;
An RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure comprising a. In claim 55 ,
The Al _y Ga _1-y N support layer 804 having a three-dimensional structure of the bottom/side/top;
The lower area is larger than the upper area,
The side is a three-dimensional structure of a curved surface from the bottom to the top,
In addition, two vertical growth directions on the upper surface of the three-dimensional structure and the lower surface without the three-dimensional structure,
is the horizontal growth direction in terms of the three-dimensional structure,
In addition, the three-dimensional area of the Al _y Ga _1-y N support layer 804 is greater than the three-dimensional area of the Al _x Ga _1-x N strain matching layer 803;
An RF HET electronic device having a three-dimensional AlGaN / GaN heterojunction structure comprising a. In claim 55,
The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer 805 is;
It is lower than the Al _y Ga _1-y N strain matching layer 803 formed at the bottom (x>y),
Lower than the Al _a Ga _1-a N electron confinement layer 806 formed thereon (a>y),
Lower than the Al _c Ga _1-c N barrier layer 810 formed on the top (c>y),
The Al composition of the Al _a Ga _1-a N electron confinement layer 806 is;
Less than or equal to the upper Al _x Ga _1-x N strain matching layer 803 (a≤x),
The same or higher (a≥c) than the upper Al _c Ga _1-c N barrier layer 810;,
A high frequency (RF) high electron mobility transistor comprising: In claim 55,
Under the high-quality crystalline Al _y Ga _1-y N support layer 804 and the semi-insulating Al _y Ga _1-y N layer 805,
An AlN lattice matching layer 801 for lattice matching with the substrate is formed,
an Al _x Ga _1-x N layer 803 which is a strain matching layer of the AlN lattice matching layer 801, the Al _y Ga _1-y N support layer 704;
A high frequency (RF) high electron mobility transistor comprising: In claim 55,
The support part 300 having a three-dimensional structure,
The semi-insulating Al _y Ga _1-y N layer 805 having a high resistance value of ~MΩ or more;
It has a structure with Acceptor-H complex distribution,
It is composed of acceptor impurities such as Mg, Zn, C, Ir, and Fe.
A high frequency (RF) high electron mobility transistor with an impurity concentration in the range of 10 ¹⁹ to 10 ²¹ /cm ³ . In claim 55,
the surface protection layer and the electrode contact layer 811;
Formed by growing on the semi-insulating Al _y Ga _1-y N layer 805,
Surface protection of the Al _c Ga _1-c N barrier layer 810 formed on the lower side,
or Schottky and Ohmic electrode contacts,
composed of GaN, AlGaN, and Al(In)N containing no impurities;
Composed of GaN, AlGaN, and Al(In)N containing acceptor impurities,
In addition, the Si _x N _y insulating film is formed by in-situ and ex-situ methods;
A high frequency (RF) high electron mobility transistor comprising: In claim 55,
The support part 300 having a three-dimensional structure,
Based on the formed semi-insulating Al _y Ga _1-y N layer 805;
Has a discontinuous Acceptor-H complex distribution at the interface with the Al _y Ga _1-y N support layer 804 formed on the lower side,
In addition, a discontinuous Acceptor-H complex distribution is observed at the interface with the Al _a Ga _1-a N electron confinement layer 806 formed thereon;
A high frequency (RF) high electron mobility transistor comprising: In claim 55,
The support part 300 having a three-dimensional structure,
A semi-insulating Al _y Ga _1-y N layer 805 having a high resistance value of ~MΩ or more;
An Al _b Ga _1- b N channel layer 807 formed on the semi-insulating Al _y Ga _1- y N layer 805;
At the interface with the AlN space layer 809 on top of the Al _b Ga _1-b N channel layer 807
a two-dimensional gas (2DEG) layer 808 having a high carrier electron concentration and mobility;
A high frequency (RF) high electron mobility transistor comprising: In claim 55,
The support part 300 having a three-dimensional structure,
A semi-insulating Al _y Ga _1-y N layer 805 having a high resistance value of ~MΩ or more;
An Al _b Ga _1- b N channel layer 807 formed on the semi-insulating Al _y Ga _1- y N layer 605;
On top of the Al _c Ga _1-c N barrier layer 810 formed on the Al _b Ga _1- b N channel 807 layer,
a surface protection layer and an electrode contact layer 711 composed of a nitride semiconductor and an insulating film;
A field effect transistor comprising: In claim 55,
The support part 300 having a three-dimensional structure,
As a semi-insulating Al _y Ga _1-y N layer 805 having a high resistance value of ~ MΩ or more,
Semiconductor materials including SiC, Sapphire, Silicon, etc. are used as substrates.
High frequency (RF) high electron mobility transistors and field effect transistors.

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