KR20230090573A - AlGaN/GaN hetero-junction structure of HEMT Device of having multi-strain matching structure - Google Patents

Abstract

Field effect transistor (FET) and radiofrequency (RF) high electron mobility transistor (HEMT) electronic devices having an AlGaN/GaN heterojunction structure with improved crystal defects are disclosed. Provided are an AlN lattice matching layer with a large energy band gap formed on an upper part of a substrate to improve the crystal defects and an Al_xGa_(1-x)N multi-strain (stress) matching layer to effectively suppress and improve the crystal defects caused by the strain (stress) arising from a large energy band gap difference with an Al_yGa_(1-y)N support layer and the resulting stress. In the present invention, provided are FET and RF HEMT electronic devices having a high-performance/high-power AlGaN/GaN heterojunction structure with the improved crystal defects by providing a multi-strain matching structure of various structures through energy band gap engineering to effectively suppress the strain.

Description

High electron mobility transistor device of AlGaN/GaN heterojunction structure having multi-strain structure {AlGaN/GaN hetero-junction structure of HEMT Device of having multi-strain matching structure}

The present invention relates to a high-power and high-frequency high electron mobility transistor electronic device using an AlGaN/GaN heterojunction structure nitride semiconductor, and more particularly, an AlN lattice matching layer by applying an Al _x Ga _1-x N multi-strain matching layer High frequency electron transfer of AlGaN/GaN heterojunction structure with high performance/high output characteristics with improved crystal defects by effectively controlling the strain (stress) generated by the high energy bandgap difference between the and Al _y Ga _1-y N support layers It also relates to a transistor (RF High Electron Mobility Transistor_HEMT) electronic device.

In general, electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) are general transistor types made of semiconductor materials such as silicon or gallium arsenide (GaAs). When a silicon semiconductor material is used, it has a disadvantage in that high source resistance is generated because electron mobility (approximately 1450 cm 2 /v.sec) is low. These high source resistances severely detract from the otherwise obtainable High Performance Gain from electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) based on silicon semiconductor materials. [CRC Press, The Electrical Engineering Handbook, Second Edition, Dorf, pp.994,1997]

In addition, electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) based on gallium arsenide (GaAs) compound semiconductor materials have superior electron mobility (6000 cm2/v.sec) than silicon semiconductor materials. And it has a low source resistance accordingly, so that high-frequency operation with excellent performance can be implemented. However, since the gallium arsenide compound semiconductor material has a relatively small breakdown voltage (Vbr) due to a small energy bandgap (Energy Bandgap_1.42Ev), field effect transistors (FETs) and high electrons based on the gallium arsenide compound semiconductor material Electronic devices such as mobility transistors (HEMTs) have limitations in implementing high power performance at high frequencies.

Performance development of electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) using GaN-based nitride semiconductors with AlGaN/GaN heterojunctions and remarkable growth of products have been achieved. GaN-based nitride semiconductors have a much larger energy bandgap (Energy Bandgap_3.4ev) than silicon and gallium arsenide semiconductor materials, so they have a high breakdown voltage and can accommodate a lot of current, so they are suitable for electronic devices operating at high power and high temperatures. Implementation of the first MESFET (Metal Semiconductor FET_Metal Semiconductor Field Effect Transistor based on single crystal GaN, Appl.Phys, Lett., Vol.62, pp.1789,(1993), M.A.Khan,..) using GaN-based nitride semiconductor Since then, field effect transistors (FETs) and high electron mobility transistors (HEMTs) capable of implementing high power/high frequency performance using AlGaN/GaN hetero-junctions (Hetro-Junction) have been developed and commercialized.

US Pat. No. 5,192,987 to Khan et al. discloses an AlGaN/GaN substrate HEMT grown on a buffer and substrate and a method for producing the same. HEMTs of other AlGaN/GaN heterojunction structures were published in [IEEE Electron Device Letter, Vol.18, No.10, October 1997, pp.492] by Gaska et al. Field effect of a high-current AlGaN heterostructure grown on a P-type SiC substrate in an academic journal [IEEE Electron Devices Letters, Vol.19, No.2, February 1998, Page.54] contributed by Ping et al. DC and microwave performance of transistors". Korean Patent No. 0710654 by Yifeng Wu et al. states "Group III nitride-based field effect transistors with reduced trapping and high electron mobility transistors and their manufacture. Method" and Korean Patent No. 0920434 discloses "Insulated Gate Gallium Arsenide, Nitride/Gallium Nitride-Based High Electron Mobility Transistor". In addition, Beech Roberts Korean Patent No. 1045573 discloses "Group III Nitride Enhancement Mode Device". Korean Patent No. 0955249 by Toshihiro Oki discloses "Nitride Semiconductor Device and Manufacturing Method Thereof" and Kenichiro Kurahashi et al. discloses "Semiconductor Device and Manufacturing Method Thereof" in Korean Patent No. 1870524. US Patent No. 7,772,055 to Marianne Germaine et al. discloses "ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTRO DEVICES".

There are several reasons why GaN-based nitride semiconductors are suitable for high-frequency and high-power electronic devices compared to other III-V compound semiconductors. First, GaN-based nitride semiconductors have a maximum electron speed of 2.7x10 ⁷ cm/sec at room temperature, which is faster than that of gallium arsenide (GaAs) compound semiconductors. High-frequency characteristics can be obtained, and current and current density are improved. Second, the breakdown electric field is 3 to 4 MV/cm, comparable to the value in silicon carbide (SiC), and the high breakdown electric field due to the wide energy band gap can handle high force by increasing the breakdown voltage. Thirdly, the discontinuity of the conduction band in the AlGaN/GaN heterojunction is large, and the amount of charge that can be accommodated in the 2-dimensional electron gas (DEG) layer is large. That is, the energy difference in the heterojunction increases due to the large energy bandgap difference between AlN with an energy bandgap of 6.2eV and GaN with an energy bandgap of 3.4eV, and about 70% of the energy difference forms a discontinuity in the conduction band. A larger energy difference can be obtained. The large conduction band discontinuity helps charge accumulation in the channel and plays a very important role in increasing the maximum current. Fourth, a significant amount of strain occurs around the heterojunction surface due to mismatch of lattice mismatch between AlN and GaN thin films. This stress generates a piezoelctric_effect in the hexagonal close-packed structure, A built-in electric field is formed. In most cases, this built-in electric field serves to focus more electrons on the channel where electrons move, so the amount of charge in the channel increases and eventually helps to increase the maximum current.

In general, electronic devices such as AlGaN/GaN heterojunction structure field effect transistors (FETs) and high electron mobility transistors (HEMTs) have low mutual transfer conductance (H) characteristics and are used as electronic channel layers. Depending on whether the single crystal GaN thin film layer is doped or not doped with impurities (Si), the sheet carrier concentration and electron mobility characteristics in the two-dimensional electron gas (2DEG) layer formed at the AlGaN/GaN heterojunction interface are improved.

Single-crystal GaN nitride semiconductors have excellent material properties, and when forming an AlGaN/GaN heterojunction structure, a high-concentration two-dimensional electron layer (2DEG) is created, so low on-resistance, high current density, and high electron mobility can be obtained. . GaN-based nitride semiconductors are grown as high-quality single-crystal epitaxial thin films on silicon, sapphire, and silicon carbide substrates using MOCVD or MBE equipment. Among them, silicon carbide (SiC) substrates have excellent thermal conductivity, It is easy to secure high output and excellent high-frequency performance and reliability of electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) of AlGaN/GaN heterojunction structure because the difference in thermal expansion coefficient is small. In addition, it has superior performance advantages over GaAs and InP-based devices, which are chemical semiconductors, such as excellent high-temperature stability, 10 times higher output per unit area, high linearity, and excellent low-noise characteristics.

In addition, the silicon carbide (SiC) substrate has excellent thermal conductivity, so it can effectively dissipate heat generated during device operation to mitigate the deterioration of device characteristics due to heat, and SiC and GaN have different lattice constants and thermal expansion coefficients. , compared to the Sapphire substrate, it is easy to secure excellent reliability by reducing crystal defects and stress, and it is possible to grow a high-quality GaN-based nitride semiconductor thin film layer and structure, so that better electrical properties can be obtained.

In order to manufacture RF amplification devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs) having an AlGaN/GaN heterojunction structure, high-quality silicon carbide (SiC) substrates with excellent thermal conductivity and easy high output The single crystal structure of is grown using MOCVD and MBE equipment.

Research and development for improving the performance of FET and HEMT electronic devices having an AlGaN/GaN heterojunction structure is being concentrated. For this, the following conditions must be satisfied. 1) Design and growth of AlGaN/GaN heterojunction structure, 2) Growth of high-resistance buffer layer and back barrier structure, 3) Design of AlGaN/GaN heterojunction structure for FET and HEMT devices to improve RF characteristics, 4) Improvement of reliability Research / development on AlGaN / GaN heterojunction structure growth technology for More specifically, 1) AlGaN/GaN heterojunction structure growth technology using appropriate AlGaN barrier layer growth conditions, 2) AlGaN and p-GaN back barrier technology for reducing leakage current and improving breakdown voltage, 3) Iron or Carbon doping 4) thin Al(In)N barrier layer growth technology to reduce the short channel effect, 5) in-situ capping layer growth technology for excellent surface characteristics. Through the design and growth of this optimized AlGaN/GaN heterojunction structure, RF high-output power amplification devices of FET and HEMT electronic devices are provided.

The technical problem to be achieved by the present invention is to apply Al _x Ga _1-x N multi-strain (stress) matching to effectively suppress crystal defects, and to develop a FET having an AlGaN / GaN heterogeneous matching structure with improved reliability and a high frequency (RF) high frequency (RF) An electron mobility transistor (HEMT) electronic device is provided.

The present invention for achieving the above technical problem, as a high electron mobility transistor electronic device; An AlN lattice matching layer formed on a substrate, an Al _x Ga _1-x N strain matching layer formed on the AlN lattice matching layer, and an _Al y Ga _1-y N formed on the Al _x Ga _1-x N strain matching layer. A support layer, a semi-insulating Al _y Ga _1-y N layer formed on the Al _y Ga _1-y N support layer, an Al _a Ga 1-a N electron confinement layer formed on the semi-insulating Al _y Ga _1- y N layer, An Al _b Ga _{1- b N channel layer formed on the Al a Ga 1- a} N electron confinement layer, an AlN space layer formed on the Al _b Ga _1-b N channel layer, and formed on the AlN space layer. An Al _c Ga _1-c N barrier layer, and a surface protection layer formed on the Al _c Ga _1-c N barrier layer, wherein the semi-insulating Al _y Ga _1-y N layer has an Acceptor-H complex distribution structure, and has a high resistance value of ~ MΩ or more, and the Al _x Ga _1-x N strain matching layer is [GaN (210a) / Al _x Ga _1-x N ¹ (210b) / GaN (210a) / Al _x Ga _1-x N ² (210c)/GaN (210a)/Al _x Ga _1-x N ³ (210d)/GaN (210a)/Al _x Ga _1-x N ⁴ (210e)] ; Provides a very high frequency (RF) high electron mobility transistor comprising a.

In addition, the technical problem of the present invention, as a high electron mobility transistor electronic device; An AlN lattice matching layer formed on a substrate, an Al _x Ga _1-x N strain matching layer formed on the AlN lattice matching layer, and an _Al y Ga _1-y N formed on the Al _x Ga _1-x N strain matching layer. A support layer, a semi-insulating Al _y Ga _1-y N layer formed on the Al _y Ga _1-y N support layer, and an Al _a Ga _{1- a} N electron confinement formed on the semi-insulating Al _y Ga 1-y N layer. layer, an Al _b Ga _{1- b} N channel layer formed on the Al _a Ga 1-a N electron confinement layer, an AlN space layer formed on the Al _b Ga _1-b N channel layer, and an upper portion of the AlN space layer An Al _c Ga _1-c N barrier layer formed on the Al _{c Ga 1-c N barrier layer, and a surface protection layer formed on top of the Al c} Ga _1-c N barrier layer, and the semi-insulating Al _y Ga _1-y N layer is an Acceptor-H complex It is a distribution structure, has a high resistance value of ~ MΩ or more, and the Al _x Ga _1-x N strain matching layer has a [Al _x Ga _1-x N (320a) / AlN (320b)] laminated structure with a constant thickness. It is a pair of primary superlattice structures, and a constant thickness of [Al _{x Ga 1-x N} (320c) / GaN ( 320d)] provides an ultra-high frequency (RF) high electron mobility transistor comprising a secondary superlattice structure in which a stacked structure is paired, wherein the primary superlattice structure and the secondary superlattice structure are formed consecutively.

Another technical problem of the present invention, as a high electron mobility transistor electronic device; An AlN lattice matching layer formed on a substrate, an Al _x Ga _1-x N strain matching layer formed on the AlN lattice matching layer, and an _Al y Ga _1-y N formed on the Al _x Ga _1-x N strain matching layer. A support layer, a semi-insulating Al _y Ga _1-y N layer formed on the Al _y Ga _1-y N support layer, and an Al _a Ga _{1- a} N electron confinement formed on the semi-insulating Al _y Ga 1-y N layer. layer, an Al _b Ga _{1- b} N channel layer formed on the Al _a Ga 1-a N electron confinement layer, an AlN space layer formed on the Al _b Ga _1-b N channel layer, and an upper portion of the AlN space layer An Al _c Ga _1-c N barrier layer formed on the Al _{c Ga 1-c N barrier layer, and a surface protection layer formed on top of the Al c} Ga _1-c N barrier layer, and the semi-insulating Al _y Ga _1-y N layer is an Acceptor-H complex It is a structure of distribution, has a high resistance value of ~ MΩ or more, and the Al _x Ga _1-x N strain matching layer has a constant thickness of [Al _x Ga _1-x N (420a) / GaN (420b) / Al _x Ga _1-x N (420a) / AlN (420c)] is a first-order superlattice structure in which the stacked structure is paired, and the [Al _x Ga _1-x N (420a) / GaN (420b) / Al _x Ga _1-x N (420a) / AlN (420c)] is a secondary superlattice structure in which a [Al _x Ga _1-x N (420d) / GaN (420d)] laminated structure of a certain thickness is paired on top of the primary superlattice structure. , The primary superlattice structure and the secondary superlattice structure provide an ultra-high frequency (RF) high electron mobility transistor including being formed consecutively.

According to the present invention described above, the AlGaN / GaN heterojunction structure formed on the Al _y Ga _1-y N support layer and the upper part in the same c-axis growth direction due to the difference in the large energy band gap of the AlN lattice matching layer on the substrate Provided is an Al _x Ga _1-x N multi-strain matching layer for effectively suppressing strain propagating to the surface of FET and RF HEMT electronic devices having and consequent generation of crystal defects. In addition, by applying a semi-insulating Al _y Ga _1-y N layer having an Acceptor-H complex distribution of various structures with a high resistance value of ~MΩ or higher, AlGaN/ Provided are FET and RF HEMT electronic devices having a GaN heterojunction structure.

Figure 1. A cross-sectional view showing the change in the direction of strain (stress) generated by increasing/monitoring the growth temperature to grow a single-crystal [AlN vs GaN] nitride semiconductor layer and a photograph of the actual AlN surface.
Figure 2. A cross-sectional view of an epi for RF HEMT devices having an AlGaN/GaN heterojunction structure.
Figure 3. Al _x Ga _1-x N multi-strain matching layer 220 of the AlGaN / GaN heterojunction structure is a cross-sectional view of the RF HEMT device epitaxial.
Figure 4. A cross-sectional view of an epi for an RF HEMT device having an AlGaN/GaN heterojunction structure of an Al _x Ga _1-x N multi-strain matching layer 320.
5. A cross-sectional view of an epi for an RF HEMT device having an AlGaN/GaN heterojunction structure of an Al _x Ga _1-x N multi-strain matching layer 420.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments make the disclosure of the present invention complete, and the common knowledge in the art to which the present invention belongs. It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Throughout the specification, reference numerals refer to components.

Hereinafter, a high frequency (RF) high electron mobility transistor (High Electron Mobility Transistor, HEMT, hereinafter referred to as HEMT) with improved leakage current and breakdown voltage according to the present invention will be described in detail with reference to the accompanying drawings. .

High-concentration electron movement in AlGaN/GaN heterojunction structure field effect transistor (Field Effect Transistor_FET, hereinafter referred to as FET) and high electron mobility transistor (High Electron Mobility Transistor_HEMT, hereinafter referred to as HEMT) RF electronic device using nitride semiconductor material In order to improve the conductivity, a high-quality GaN channel layer must be grown, and in order to limit the mobility of electrons into the channel layer, a thick, high-quality, high-resistance GaN layer with a high breakdown voltage and a maximum prevention of leakage current flowing down the channel layer is inevitable. is required as The high-resistance single-crystal GaN layer uses an undoped GaN layer using Ga vacancy that serves as a deep acceptor without doping impurities, and a GaN layer doped with iron and carbon impurities. Iron impurities have a disadvantage in that growth is difficult due to the memory effect, and the carbon impurity doping method is a high-resistance GaN layer by doping carbon, which is a by-product formed in the process of dissociation by the high growth temperature as the TMGa MO source is introduced into the growth chamber. way to implement it.

In the present invention, FET and RF HEMT having an AlGaN/GaN heterojunction structure that effectively improves bulk leakage current and breakdown voltage by growing a semi-insulating AlGaN layer having an Acceptor-H complex distribution structure with a very high resistance value of ~MΩ or more Provides electronic devices. In addition, in order to grow a semi-insulating AlGaN layer having a high-quality Acceptor-H complex distribution structure, an AlN lattice matching layer and an AlGaN multi-strain matching layer are provided on the substrate, and an effective strain with the AlGaN support layer is provided on the AlGaN multi-strain matching layer. Reliability of high power FET and RF HEMT electronic devices having an AlGaN/GaN heterojunction structure is improved by suppressing crystal defects through matching.

In the present invention, by using MOCVD (Metal Organic Chemical Vapor Deposition) equipment, using the physical properties of AlN, AlGaN, and GaN individual layers, multiple strain matching layers having various forms such as Al composition (content), thickness and structure are formed. applied to effectively suppress crystal defects generated by strain (stress). In addition, the high-quality thick semi-insulating Al _x Ga _1-x N layer with low bulk leakage current and high breakdown voltage is composed of p-type dopant impurities such as Zn (DMZn), Mg (Cp ₂ Mg) and Carbon (TMGa). An acceptor (Mg, Zn)-H complex structure with high resistance of ~MΩ or more was grown by injecting impurities during the growth of the Al _x Ga _1-x N layer. In the case of Zn (DMZn) or Mg (Cp ₂ Mg) impurities, the high-quality single-crystal Al _x Ga _1-x N layer has strong ionic bonding characteristics, so the energy level of the impurity is 200 meV, and the acceptor (Mg or Zn)- The semi-insulating property of the H complex itself was used. The Acceptor-H complex present in the Al _x Ga _1-x N layer contains Zn or Mg impurities that have almost no hole carriers contributing to electrical conductivity by a very high resistance value. It is not the p-type Al _x Ga _1-x N layer that forms holes contributing to electrical conductivity by distributing in combination with hydrogen.

In the present invention, FIG. 1 shows the strain (strain) while the high-temperature growth temperature of 1000 to 1200 ° C. or higher increases / decreases in the process of growing a single-crystal AlN layer with a large energy band gap after forming a high-quality single-crystal layer on a substrate. ) is a surface photograph of the 0.2 μm-thick AlN layer grown on top of the single-crystal GaN layer having a thickness of 2 μm in the production direction and the actual thickness.

Referring to FIG. 1, when an AlN layer is grown on top of a single-crystal GaN layer at a high temperature, strain (stress) is generated due to a large energy bandgap difference. As the growth temperature increases and decreases, the direction of the strain acts in the opposite direction. do. By using the physical properties in the strain (stress) direction, the thickness difference between the GaN layer and the AlN layer and the growth conditions are changed so that strain (stress) matching is possible, resulting in crack-like crystals generated by actual strain (stress). defects can be effectively suppressed.

However, even though strain matching can be achieved by the thickness difference between the GaN layer and the AlN layer, when the thickness of the AlN layer increases, the preferential direction of strain (stress) occurs again, and when the strain (stress) matching is broken, a large amount of crack occurs.

In the present invention, in order to effectively suppress the strain (stress) generated by the large energy band gap difference between the AlN lattice matching layer, the AlGaN support layer, and the thick semi-insulating AlGaN layer, AlGaN and AlGaN appropriately changed in Al composition (content) and Provided is a technology capable of minimizing crystal defects by applying a multi-strain matching layer in which the structure and thickness of the GaN layer are changed.

2 _{is an} embodiment of the present invention _{, AlGaN} / It is an epi-section structure 10 of a high-frequency (RF) HEMT electronic device of a GaN heterojunction structure.

Referring to FIG. 2, after forming an AlN lattice matching layer 110 having a thickness range of 0.05 μm to 0.5 μm, more preferably 0.05 μm to 0.3 μm at a high growth temperature on the substrate 100, An Al _x Ga _1-x N multi-strain matching layer 120 having a thickness range of 0.1 μm to 2 μm, preferably 0.1 μm to 0.1 μm, is formed on the AlN lattice matching layer 110. After forming a high-quality Al _y Ga _1-y N support layer 130 having a thickness range of 0.2 μm to 3 μm and preferably a thickness range of 0.2 μm to 2 μm on top of the strain matching layer 120, a high Forming a semi-insulating Al _y Ga _1-y N layer 140 having a structure of Acceptor-H complex distribution in a thickness range of 0.2 μm to 5 μm having a resistance value, preferably in a thickness range of 0.2 μm to 3 μm do. An Al _a Ga _1-a N electron confinement layer 150 is formed on the Al _y Ga _1-y N layer 140 in a thickness range of 0.02 μm to 0.3 μm, preferably in a thickness range of 0.02 μm to 0.3 μm. After that, a high-quality GaN channel layer 160 is formed in a thickness range of 0.05 μm to 1 μm, preferably in a range of 0.05 μm to 0.5 μm. The thickness range of the GaN channel layer 160 is determined according to design conditions of an FET or RF HEMT electronic device. A high-quality AlN space layer 170 having a thickness of 50 Å or less is formed on the GaN channel layer 160 . Stress is generated by the discontinuous difference in energy band gap between the AlN space layer 170 and the GaN channel layer 160, and a two-dimensional gas (2DEG) layer having high sheet carrier electron concentration and high mobility is generated at the interface. is formed Therefore, the GaN channel layer 160 requires high quality crystallinity with crystal defects suppressed as much as possible, and the AlN space layer 170 having a thin thickness also requires high quality crystallinity. After forming the AlN space layer 170, an Al _c Ga _1-c N barrier layer 180 having a thickness range of 100 Å to 1000 Å, preferably 100 Å to 500 Å is formed. At this time, the Al composition of the Al _c Ga _1-c N barrier layer 180 is 20 to 35%, preferably within the range of 25 to 30%. Thereafter, the exposed Al _c Ga _1-c N barrier layer 180 is easily combined with oxygen in the air with priority to the dangling bond of Al and Ga, thereby forming a thin layer of 20 Å or less such as Al _x O _y , Ga _x O _y , etc. Since native oxide is formed, a nitride semiconductor such as GaN, AlGaN, Al(In)N, or a dielectric insulating film such as Si _x N _y is formed to protect the surface. The surface protection layer 190 using a nitride semiconductor such as GaN, AlGaN, or Al(In)N may be doped or not doped with n or p-type impurity, and the thickness is preferably in the range of 30 Å to 1000 Å. . In addition, the Si _x N _y dielectric insulating film preferably has a thickness of 1000 to 3000 Å using semiconductor equipment such as in-situ or MOCVD, CVD, Sputter, and ALD within MOCVD equipment.

Referring to Figure 2, Al _x Ga _1-x N multi-strain matching layer 120, Al _y Ga _1-y N support layer 130, semi-insulating Al _y Ga _1-y having a structure of Acceptor-H complex distribution The Al composition (content) of each of the N layer 140, the Al _a Ga _1-a N electron confinement layer 150 and the Al _c Ga _1-c N barrier layer 180 is provided as follows. The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer 140 is lower than that of the lower Al _x Ga _1-x N multi-strain matching layer 120 (x>y), and the Al formed on the upper _a Ga _{1-a lower than the} N electron confinement layer 150 (a>y), n-Al _c Ga _1-c lower than the N electron supply layer 180 (c>y), and also Al _a Ga _{1- a} The Al composition of the N electron confinement layer 150 is equal to or smaller than (a≤x) the upper Al _x Ga _1-x N multi-strain matching layer 120 grown in c-axis on the same plane c It is equal to or higher than the upper Al _c Ga _1-c N barrier layer 180 grown in the -axis. (a≥c)

3, as another embodiment of the present invention, an Al _x Ga _1-x N multi-strain matching layer 220 and a semi-insulating Al _y Ga _1-y N layer 240 having an Acceptor-H complex distribution are included. is an epi-section structure 20 of a high-frequency (RF) HEMT electronic device of an AlGaN/GaN heterojunction structure.

Referring to FIG. 3, for strain matching with the lower AlN lattice matching layer 210, Al _x Ga _1-x N ¹ (220b) and Al _x Ga _1-x N whose Al composition (content) is sequentially reduced. ² (220c), Al _x Ga _1-x N ³ (220d) and Al _x Ga _1-x N ⁴ (220e) individual structures and AlN lattice matching layer 110 and a thin GaN lattice in which the strain (stress) direction is opposite [GaN (220a) / Al _x Ga _1-x N ¹ (220b) / GaN (220a) / Al _x Ga _1-x N ² (220c) / GaN (220a) / Al _x Ga with distortion layer (201a) applied _1-x N ³ (220d)/GaN (220a)/Al _x Ga _1-x N ⁴ (220e)] to form a multi-strain (stress) matching layer 220 having a structure. The multi-strain (stress) matching layer 220 is Al _x Ga _1-x N ¹ (220b) obtained by sequentially reducing the Al composition (content) of the AlN lattice matching layer 110 by the GaN lattice distortion layer 220a. , Al _x Ga _1-x N ² (220c), Al _x Ga _1-x N ³ (220d) and Al _x Ga _1-x N ⁴ (220e) serve to effectively match strain directions. In addition, FET and RF HEMT electronic devices having a highly reliable AlGaN / GaN heterojunction structure by effectively controlling crystal defects propagating to the Al _y Ga _1-y N support layer 230 formed on the multi-strain matching layer 220 provides

Referring to FIG. 3, individual Al _x Ga _1-x N ¹ (220b), Al _x Ga _1-x N ² (220c), Al _x Ga _1-x N ³ (220d) and Al _x Ga _1-x N ⁴ (220e) The Al composition (content) of the strain layer is sequentially reduced to 70~90%, 50~70%, 30~50%, and 10~30%, respectively, and the related thickness range is 100~3000Å thickness range And, preferably provided in the range of 500 ~ 1000Å thickness.

In addition, the thickness range of the GaN layer 110 having the opposite strain direction is 20 to 200 Å, preferably provided in a thickness range of 20 to 50 Å.

4 is another embodiment of the present invention, including an Al _x Ga _1-x N multi-strain matching layer 320 and a semi-insulating Al _y Ga _1-y N layer 340 having an Acceptor-H complex distribution It shows the epi-section structure 30 of the high-frequency (RF) HEMT electronic device of the AlGaN / GaN heterojunction structure. Functions from the top of the Al _y Ga _1-y N support layer 330 to the surface protection layer 390 are provided in the same manner as in FIGS. 2 and 3 .

Referring to FIG. 4, for strain matching between the lower AlN lattice matching layer 310 and the upper Al _y Ga _1-y N support layer 330, the Al _x Ga _1-x N strain matching layer 320 is A primary superlattice structure in which a pair of [Al _x Ga _1-x N (320a) / AlN (320b)] laminated structures of constant thickness and the [Al _x Ga _1-x N (320a) / AlN (320b)] )] It is a secondary superlattice structure in which a [Al _x Ga _1-x N (320c) / GaN (320d)] laminated structure of a constant thickness is paired on top of the primary superlattice structure, and the first superlattice structure and the second superlattice structure The secondary superlattice structure is formed continuously.

[Al _x Ga _1-x N (320a) / AlN (320b)] The strain (stress) of the first-order superlattice structure has a configuration in which strain (stress) toward the substrate acts. It is preferable that the Al _x Ga _1-x N (320a) is formed first, and then the AlN (320b) is formed on the portion in contact with the AlN lattice matching layer 310. When the AlN lattice matching layer 310 is formed on the sapphire substrate, strain (stress) is formed toward the substrate. However, since the Al _x Ga _1-x N (320a) is formed, the stress toward the substrate is somewhat reduced. In addition, although the strain (stress) directed toward the substrate by the AlN lattice matching layer 310 remains, the slightly reduced strain (stress) exists toward the substrate due to the repetitive structure of the superlattice of the AlN 320b.

Referring to FIG. 4, the Al composition (content) of the semi-insulating Al _y Ga _1-y N layer 340 is lower than that of the Al _x Ga _1-x N multi-strain matching layer 320 formed thereon (x> y), lower than the Al _a Ga _1-a N electron confinement layer formed on the top (a>y), and lower than the Al _c Ga _{1 -c} N barrier layer formed on the top (c > y). The Al composition of _{the 1-a} N electron confinement layer is equal to or less (a≤x) than the upper Al _x Ga _1-x N strain matching layer grown on the same plane with c-axis A radio frequency (RF) high electron mobility transistor comprising an upper n- Al _c Ga _1-c N electron supply layer equal to or higher than (a≥c).

Referring to FIG. 4, [Al _{x Ga 1-x N} (320a) / AlN ( 320b)] 1st order superlattice structure and [Al _x Ga _1-x N(320c)/GaN(320d)] the Al composition (content) of the individual layers of the 2nd order superlattice structure is Al _x Ga in the range of 40 to 80%. _1-x N (320a), Al _x Ga _1-x N (320c) in the range of 20 to 60%, and if necessary, individual layers Al _x Ga _1-x N (320a) and Al _x Ga _1-x N The same Al composition (content) of (320c) is applied. In addition, each individual Al _x Ga _1-x N (320a) layer and Al _x Ga _1-x N (320c) of the Al _x Ga _1-x N multi-strain matching layer of the primary and secondary superlattice structures are 100 ~ 500 Å thick range, preferably 100 ~ 300 Å, and the AlN layer is 100 ~ 500 Å thick range, preferably 100 ~ 300 Å. And the GaN lattice distortion layer 320d has a thickness range of 20 to 200 Å, preferably a high frequency (RF) electron mobility transistor including a thickness range of 50 to 100 Å. The primary and secondary superlattice structures are 2 to 30 pairs, controlling the overall thickness.

The AlN (320b) preferably has a thickness of 50 Å to 300 Å. If the AlN (320b) has a thickness of less than 50 Å, there is an advantage in that the process time for forming the AlN (320b) is shortened and the productivity is improved, but the Al _x Ga _1-x N formed on the top (320a) Crystal defects are generated in the AlN 320b itself due to strain (stress). In addition, if the AlN (320b) has a thickness exceeding 300 Å, the crystallographically stable AlN (302b) can be obtained, but the strain (stress) toward the substrate acts excessively and the crystal defects from the AlN lattice matching layer 310 this happens

Also, the Al _x Ga _1-x N (320a) preferably has a thickness of 100 Å to 500 Å. An operation of absorbing and reducing strain (stress) toward the substrate is performed by the AlN 302b. Therefore, the thickness of the Al _x Ga _1-x N (320a) is preferably greater than the thickness of the AlN (302b). If the thickness of the Al _x Ga _1-x N (320a) is less than 100 Å, the stress toward the substrate by the adjacent AlN (320b) is not sufficiently reduced, causing crystal defects within itself. In addition, when the thickness of the Al _x Ga _1-x N (302a) exceeds 500 Å, a process time increases and productivity decreases due to the excessive thickness.

[Al _x Ga _1-x N (320c) / GaN (320d)] In the second order superlattice structure, Al _x Ga _1-x N (320c) preferably has a thickness of 50 Å to 300 Å. When the thickness of the Al _x Ga _1-x N (320c) is less than 50 Å, absorption of upward strain (stress) generated in the GaN (320d) is insufficient. When the thickness of Al _x Ga _1-x N (320c) exceeds 300 Å, crystal defects are generated. In addition, it is preferable that the GaN (320d) has a thickness of 10 Å to 50 Å. If the thickness of GaN (320d) is less than 10 Å, strain (stress) is not sufficiently formed and a uniform film quality cannot be obtained, and due to the difference in lattice constant or thermal expansion coefficient at the interface with Al _x Ga _1-x N (320c) This causes crystal defects.

5 is an example of the present invention, AlGaN including an Al _x Ga _1-x N multi-strain matching layer 420 and a semi-insulating Al _y Ga _1-y N layer 440 having an Acceptor-H complex distribution / It is an epitaxial cross-section structure 40 of a high-frequency (RF) HEMT electronic device of a GaN heterojunction structure. Functions from the top of the Al _y Ga _1-y N support layer 430 to the surface protection layer 490 are provided in the same manner as in FIGS. 2, 3 and 4 .

5, an AlN lattice matching layer 410 formed on a substrate 400, an Al _x Ga _1-x N multi-strain matching layer 420 formed on the AlN lattice matching layer, and the Al _x Ga ₁ An Al _y Ga _1-y N support layer 430 formed on the _-x N strain matching layer 420, and a semi-insulating Al _y Ga _1-y N formed on the Al _y Ga _1-y N support layer 430. layer 440, the Al _a Ga _1-a N electron confinement layer 450 formed on the semi-insulating Al _y Ga _1-a N layer 440, the Al _a Ga _1-a N electron confinement layer 450 ) Al _b Ga _1-b N channel layer 460 formed on top, an AlN space layer 470 formed on top of the Al _b Ga _1-b N channel layer 460, and an upper portion of the AlN space layer 470 An Al _c Ga _1-c N barrier layer 480 formed on the Al _c Ga _1-c N barrier layer 480, and a surface protection layer 490 formed on the Al c Ga 1-c N barrier layer 480.

The Al _x Ga _1-x N strain matching layer 420 has a constant thickness [Al _x Ga _1-x N (420a) / GaN (420b) / Al _x Ga _1-x N (420a) / AlN (420c) ] is a first-order superlattice structure in which the stacked structure is paired, and the [Al _x Ga _1-x N (420a) / GaN (420b) / Al _x Ga _1-x N (420a) / AlN (420c)] 1 It is a secondary superlattice structure in which [Al _x Ga _1-x N(420d)/GaN(420d) stacked structures of constant thickness are paired on top of the secondary superlattice structure. The primary superlattice structure and the secondary superlattice structure provide a high frequency (RF) high electron mobility transistor including being formed consecutively.

Referring to FIG. 5, the Al composition (content) of the semi-insulating Al _y Ga _1-y N layer 440 is lower than that of the Al _x Ga _1-x N strain matching layer formed on the bottom (x>y) and formed on the top Less than Al _a Ga _1-a N electron confinement layer (a>y), less than Al _c Ga _1-c N barrier layer (c>y). In addition, the Al composition of the Al _a Ga _1-a N electron confinement layer is equal to or less (a≤x) than the upper Al _x Ga _1-x N strain matching layer grown in the c-axis on the same plane (a≤x). Equal to or higher than the overlying Al _c Ga _1-c N barrier layer grown axially (a≥c).

In addition, between the lower AlN lattice matching layer 410 and the upper Al _y Ga1-yN support layer 430, continuously formed [Al _x Ga _1-x N (420a) / GaN (420b) / Al _x Ga In _{the 1-x} N (420a) / AlN (420c)] primary superlattice structure and the [Al _x Ga _1-x N (420d) / AlN (420b)] secondary superlattice structure, the Al composition of the individual layer ( content) is higher than Al _x Ga _1-x N (420a) in the range of 40 to 80% Al _x Ga _1-x N (420d) in the range of 20 to 60%. If necessary, the Al composition (content) of the Al _x Ga _1-x N layer 420a and the Al _x Ga _1-x N layer 420d are provided identically.

Referring to FIG. 5, each individual Al _x Ga _1-x N (420a) layer and Al _x Ga ₁ of the Al _x Ga _1-x N multi-strain matching layer 420 of the primary and secondary superlattice structures _-x N (420d) ranges in thickness from 100 to 500 Å, preferably from 100 to 200 Å. In addition, the AlN layer is provided in a thickness range of 100 to 500 Å, preferably 100 to 200 Å, and the GaN layer is provided in a thickness range of 20 to 100 Å, preferably 50 to 50 Å.

[Al _x Ga _1-x N (420a) / GaN (420b) / Al _x Ga _1-x N (420a) / AlN (420c)] In the first-order superlattice structure in which the stacked structure is paired, GaN (420b) ) forms a strain (stress) directed upward relative to the substrate. That is, the center of the GaN 420b forms strain (stress) directed upward. Therefore, the stacked structure of Al _x Ga _1-x N (420a) and GaN (420b) has strain (stress) directed upwards, but strain (stress) directed upwards by Al _x Ga _1-x N (420a) this is somewhat reduced. In addition, Al _x Ga _1-x N (420a) is disposed between the lower AlN (420d) and GaN (420b) to function as a film material capable of preventing crystal defects during crystal growth of GaN (420b).

In the structure described above, the GaN 420b generates stress toward the top, and the AlN 420d generates strain (stress) toward the substrate below. In addition, the Al _x Ga _1-x N 420a serves to suppress generation of crystal defects that may occur when AlN 420d is directly grown on GaN 420b.

[Al _x Ga _1-x N (420d) / AlN (420b)] In the second order superlattice structure in which the stacked structure is paired, Al _x Ga _1-x N (420d) has a thickness of 50 Å to 300 Å desirable. If the thickness of the Al _x Ga _1-x N (420d) is less than 50 Å, upward stress generated in the GaN (420b) is not sufficiently absorbed. When the thickness of the Al _x Ga _1-x N (420d) exceeds 300 Å, crystal defects are generated. In addition, the thickness of the GaN (420b) is preferably 10 Å ~ 50 Å. If the thickness of GaN (420b) is less than 10 Å, stress is not sufficiently formed and a uniform film quality cannot be obtained, and crystal defects due to differences in lattice constant or thermal expansion coefficient at the interface with Al _x Ga _1-x N (420d) this occurs

Referring to FIG. 5, the Al _b Ga _{1-b N channel layer 460 and AlN formed in the same c-axis growth direction as the semi-insulating Al y Ga 1-y N} layer 440 having a high resistance value of ~MΩ or more A high frequency (RF) high electron mobility transistor including a two-dimensional gas (2DEG) layer having high sheet carrier electron concentration and mobility at the interface with the space layer 470 is provided.

In the present invention, the individual layers of the epitaxial structure of the FET or RF HEMT electronic device of the AlGaN / GaN heterojunction structure formed on the substrate have a c-axis growth direction perpendicular to the growth surface of the substrate, and from the substrate to the surface protective layer The direction of the strain is opposite depending on the presence/absence of the Al composition, and the strength applied to the strain is changed by the difference in the Al composition, and the BOW value changes according to the design conditions and standards. Therefore, in order to maximally suppress the BOW value due to this strain, a highly reliable AlGaN/GaN heterojunction structure with reduced/suppressed crystal defects was developed by controlling the strain direction and strength by the unique properties of AlN and GaN thin films. FET and RF HEMT electronic devices are provided.

Substrate: 100, 200, 300, 400 AlN lattice matching layer: 110, 210, 310, 410
Al _x Ga _1-x N Strain matching layer: 120, 220, 320, 420 Al _y Ga _1-y N Support layer: 130, 230, 330, 430
Semi-insulating Al _y Ga _1-y N supporting layer with Acceptor-H complex distribution structure: 140, 240, 340, 440
Al _a Ga _1-a N electron confinement layer: 150, 250, 350, 450 Al _b Ga _1-b N channel layer: 160, 260, 360, 460
AlN space layer: 170, 270, 370, 470 Al _c Ga _1-c N barrier layer: 180, 280, 380, 390
Surface protective layer: 190, 290, 390, 490

Claims (31)

as a high electron mobility transistor electronic device;
AlN lattice matching layer formed on the substrate,
An Al _x Ga _1-x N strain matching layer formed on the AlN lattice matching layer,
An Al _y Ga _1-y N support layer formed on the Al _x Ga _1-x N strain matching layer,
A semi-insulating Al _y Ga _1-y N layer formed on the Al _y Ga _1-y N support layer;
An Al _a Ga _1-a N electron confinement layer formed on the semi-insulating Al _y Ga1 _- yN layer;
an Al _b Ga _{1- b N channel layer formed on the Al a Ga 1- a} N electron confinement layer;
an AlN space layer formed on the Al _b Ga _1-b N channel layer;
An Al _c Ga _1-c N barrier layer formed on the AlN space layer,
A surface protection layer formed on the Al _c Ga _1-c N barrier layer,
including,
The semi-insulating Al _y Ga _1-y N layer has a structure of Acceptor-H complex distribution,
It has a high resistance value of ~MΩ or more,
The Al _x Ga _1-x N strain matching layer is [GaN (220a) / Al _x Ga _1-x N ¹ (220b) / GaN (220a) / Al _x Ga _1-x N ² (220c) / GaN (220a) )/Al _x Ga _1-x N ³ (220d)/GaN (220a)/Al _x Ga _1-x N ⁴ (220e)];
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer is;
It is lower than the Al _y Ga _1-y N strain matching layer formed at the bottom (x>y),
Lower than the Al _a Ga _1-a N electron confinement layer formed on the top (a>y),
Lower than the Al _c Ga _1-c N barrier layer layer formed on the top (c>y),
The Al composition of the Al _a Ga _1-a N electron confinement layer is;
Less than or equal to the top Al _x Ga _1-x N strain matching layer grown c-axis on the same plane (a≤x)
Equal to or higher (a≥c) than the overlying Al _c Ga _1-c N barrier layer grown in c-axis on the same plane;,
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
Formed between the lower AlN lattice matching layer and the upper Al _y Ga _1-y N support layer [GaN (220a) / Al _x Ga _1-x N ¹ (220b) / GaN (220a) / Al _x Ga _{1- x} N ² (220c)/GaN (220a)/Al _x Ga _1-x N ³ (220d)/GaN (220a)/Al _x Ga _1-x N ⁴ (220e)] Al of individual layers of multi-strain matching structure The composition (content) is Al _x Ga _1-x N ¹ (220b)>Al _x Ga _1-x N ² (220c)>Al _x Ga _1-x N ³ (220d)>Al _x Ga _1-x N ⁴ ( 220e), and
The Al content of each individual layer is 70-90%, 50-70%, 30-50% and 10-30%, respectively;
A very high frequency (RF) high electron mobility transistor comprising: In claim 1,
Each individual Al _x Ga _1-x N 1 (220b), Al _x Ga _1-x N ² (220c), _{Al x} Ga _{1-x N} ³ ( ^220d ) of the Al x Ga 1-x N multi-strain matching structure ), Al _x Ga _1-x N ⁴ (220e) ranges in thickness from 100 to 3000 Å,
Preferably in the range of 500 ~ 1000Å thickness,
The thickness of the GaN layer 220a ranges from 20 to 200 Å, preferably from 20 to 50 Å.
A very high frequency (RF) high electron mobility transistor comprising: In claim 1,
The semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
It has a structure with Acceptor-H complex distribution,
It is composed of acceptor impurities such as Mg, Zn, C, Ir, Fe, etc.
A high frequency (RF) high electron mobility transistor having an impurity concentration in the range of 10 ¹⁹ to 10 ²¹ /cm 3 . In claim 1,
The surface protective layer;
It is formed by growing in the same c-axis direction on top of the semi-insulating Al _y Ga _1-y N layer,
To protect the surface of the Al _c Ga _1-c N barrier layer formed on the bottom
composed of GaN, AlGaN, and Al(In)N that do not contain fire;
Composed of GaN, AlGaN, and Al(In)N containing acceptor impurities,
In addition, the Si _x N _y insulating film is formed by in-situ and ex-situ methods;
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
Based on the semi-insulating Al _y Ga _1-y N layer formed in the same c-axis growth direction;
Has a discontinuous Acceptor-H complex distribution at the interface with the Al _y Ga _1-y N support layer formed at the bottom,
In addition, a discontinuous Acceptor-H complex distribution was observed at the interface with the Al _a Ga _1-a N electron confinement layer formed thereon;
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
A semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
An Al _b Ga _1-b N channel layer formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer;
A two-dimensional gas (2DEG) layer having high carrier electron concentration and mobility at the interface with the AlN space layer formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer;
A high frequency (RF) high electron mobility transistor comprising: In claim 1,
A semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
An Al _b Ga _1-b N channel layer formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer;
On top of the Al _c Ga _1-c N barrier layer formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer,
a surface protective layer composed of a nitride semiconductor and an insulating film;
A field effect transistor comprising: In claim 1,
It has a high resistance value of ~MΩ or more,
A semi-insulating Al _y Ga _1-y N layer formed in the growth direction of the c-axis,
Semiconductor materials including SiC, Sapphire, Silicon, etc. are used as substrates.
High frequency (RF) high electron mobility transistors and field effect transistors. as a high electron mobility transistor electronic device;
AlN lattice matching layer formed on the substrate,
An Al _x Ga _1-x N strain matching layer formed on the AlN lattice matching layer,
An Al _y Ga _1-y N support layer formed on the Al _x Ga _1-x N strain matching layer,
A semi-insulating Al _y Ga _1-y N layer formed on the Al _y Ga _1-y N support layer;
An Al _a Ga _1-a N electron confinement layer formed on the semi-insulating Al _y Ga _1-y N layer;
an Al _b Ga _{1- b N channel layer formed on the Al a Ga 1- a} N electron confinement layer;
an AlN space layer formed on the Al _b Ga _1-b N channel layer;
An Al _c Ga _1-c N barrier layer formed on the AlN space layer,
A surface protection layer formed on the n-Al _c Ga _1-c N electron supply layer;
including,
The semi-insulating Al _y Ga _1-y N layer has a structure of Acceptor-H complex distribution,
It has a high resistance value of ~MΩ or more,
The Al _x Ga _1-x N strain matching layer has a primary superlattice structure in which a pair of [Al _x Ga _1-x N (320a) / AlN (320b)] stacked structures of a constant thickness are paired,
2 pairing [Al _x Ga _1-x N (320a) / AlN (320b)] stacked structures of constant thickness on top of the [Al _x Ga _1-x N (320a) / AlN (320b)] superlattice It is a quadratic superlattice structure,
The primary superlattice structure and the secondary superlattice structure are continuously formed;
A high frequency (RF) high electron mobility transistor comprising: In claim 11,
The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer is;
It is lower than the Al _y Ga _1-y N strain matching layer formed at the bottom (x>y),
Lower than the Al _a Ga _1-a N electron confinement layer formed on the top (a>y),
Lower than the Al _c Ga _1-c N barrier layer formed on the top (c>y),
In addition, the Al composition of the Al _a Ga _1-a N electron confinement layer;
Less than or equal to the top Al _x Ga _1-x N strain matching layer grown c-axis on the same plane (a≤x)
Equal to or higher (a≥c) than the overlying Al _c Ga _1-c N barrier layer grown in c-axis on the same plane;,
A high frequency (RF) high electron mobility transistor comprising: In claim 11,
Formed between the lower AlN lattice matching layer and the upper Al _y Ga _1-y N support layer
[Al _x Ga _1-x N (320a) / AlN (320b)] 1st superlattice structure and [Al _x Ga _1-x N (320c) / GaN (320d)] 2nd superlattice structure formed continuously The Al composition (content) of the layer is
The Al composition (content) of the individual layer is Al _x Ga _1-x N (320a) in the range of 40 to 80% is higher than Al _x Ga _1-x N (320c) in the range of 20 to 60%;
A very high frequency (RF) high electron mobility transistor comprising: In claim 11,
Each individual Al _x Ga _1-x N (320a) layer and Al _x Ga _1-x N (320c) of the Al _x Ga ₁ -x N multi-strain matching layer of the primary and secondary superlattice structures are 100 to 500 Å thickness range, preferably 100 ~ 200 Å
The AlN layer is in the range of 100 to 500 Å thick, preferably 100 to 200 Å,
GaN layer is in the range of 20 ~ 200Å thickness, preferably 50 ~ 100Å thickness range;
A high frequency (RF) high electron mobility transistor comprising: In claim 11,
The semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
It has a structure with Acceptor-H complex distribution,
It is composed of acceptor impurities such as Mg, Zn, C, Ir, Fe, etc.
A high frequency (RF) high electron mobility transistor having an impurity concentration in the range of 10 ¹⁹ to 10 ²¹ /cm 3 . In claim 11,
The surface protective layer;
It is formed by growing in the same c-axis direction on top of the semi-insulating Al _y Ga _1-y N layer,
To protect the surface of the Al _c Ga _1-c N barrier layer formed on the bottom
composed of GaN, AlGaN, and Al(In)N containing no impurities;
Composed of GaN, AlGaN, and Al(In)N containing acceptor impurities,
In addition, the Si _x N _y insulating film is formed by in-situ and ex-situ methods;
A high frequency (RF) high electron mobility transistor comprising: In claim 11,
Based on the semi-insulating Al _y Ga _1-y N layer formed in the same c-axis growth direction;
Has a discontinuous Acceptor-H complex distribution at the interface with the Al _y Ga _1-y N support layer formed at the bottom,
In addition, a discontinuous Acceptor-H complex distribution was observed at the interface with the Al _a Ga _1-a N electron confinement layer formed thereon;
A high frequency (RF) high electron mobility transistor comprising: In claim 11,
A semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
An Al _b Ga _1-b N channel layer formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer;
A two-dimensional gas (2DEG) layer having high carrier electron concentration and mobility at the interface with the AlN space layer formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer;
A high frequency (RF) high electron mobility transistor comprising: In claim 11,
A semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
An Al _b Ga _1-b N channel layer formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer;
On top of the Al _c Ga _1-c N barrier layer formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer,
a surface protective layer composed of a nitride semiconductor and an insulating film;
A field effect transistor comprising: In claim 11,
It has a high resistance value of ~ MΩ or more,
A semi-insulating Al _y Ga _1-y N layer formed in the growth direction of the c-axis,
Semiconductor materials including SiC, Sapphire, Silicon, etc. are used as substrates.
High frequency (RF) high electron mobility transistors and field effect transistors. as a high electron mobility transistor electronic device;
AlN lattice matching layer formed on the substrate,
An Al _x Ga _1-x N strain matching layer formed on the AlN lattice matching layer,
An Al _y Ga _1-y N support layer formed on the Al _x Ga _1-x N strain matching layer,
A semi-insulating Al _y Ga _1-y N layer formed on the Al _y Ga _1-y N support layer;
An Al _a Ga _1-a N electron confinement layer formed on the semi-insulating Al _y Ga _1-y N layer;
an Al _b Ga _{1- b N channel layer formed on the Al a Ga 1- a} N electron confinement layer;
an AlN space layer formed on the Al _b Ga _1-b N channel layer;
An Al _c Ga _1-c N barrier layer formed on the AlN space layer,
A surface protection layer formed on the Al _c Ga _1-c N barrier layer,
including,
The semi-insulating Al _y Ga _1-y N layer has a structure of Acceptor-H complex distribution,
It has a high resistance value of ~MΩ or more,
The Al _x Ga _1-x N strain matching layer has a constant thickness [Al _x Ga _1-x N (420a) / GaN (420b) / Al _x Ga _1-x N (420a) / AlN (420c)] laminated structure It is a first-order superlattice structure with a pair of
A constant _{thickness of [} Al _{x Ga 1-} It is a secondary superlattice structure in which _x N (420d) / GaN (420d) stacked structures are paired,
The primary superlattice structure and the secondary superlattice structure are continuously formed;
A high frequency (RF) high electron mobility transistor comprising: In claim 21,
The Al composition (content) of the semi-insulating Al _y Ga _1-y N layer is;
It is lower than the Al _y Ga _1-y N strain matching layer formed at the bottom (x>y),
Lower than the Al _a Ga _1-a N electron confinement layer formed on the top (a>y),
Lower than the Al _c Ga _1-c N barrier layer formed on the top (c>y),
The Al composition of the Al _a Ga _1-a N electron confinement layer is;
Less than or equal to the top Al _x Ga _1-x N strain matching layer grown c-axis on the same plane (a≤x)
Equal to or higher (a≥c) than the overlying Al _c Ga _1-c N barrier layer grown in c-axis on the same plane;,
A high frequency (RF) high electron mobility transistor comprising: In claim 21,
Between the lower AlN lattice matching layer and the upper Al _y Ga _1-y N support layer,
Continuously formed [Al _x Ga _1-x N(420a)/GaN(420b)/Al _x Ga _1-x N(420a)/AlN(420c)] primary superlattice structure and [Al _x Ga _1-x N (420d) / GaN (420b)] in the second order superlattice structure,
The Al composition (content) of the individual layer is that Al _x Ga _1-x N (420a) in the range of 40 to 80% is higher than Al _x Ga _1-x N (420d) in the range of 20 to 60%;
A very high frequency (RF) high electron mobility transistor comprising: In claim 21,
Each individual Al _x Ga _1-x N (420a) layer and Al x Ga _1-x N (420d) _of the Al _x Ga _1- x N multi-strain matching layer of the primary superlattice structure and the secondary superlattice structure is in the range of 100 to 500 Å thickness, preferably 100 to 200 Å,
The AlN layer is in the range of 100 to 500 Å thick, preferably 100 to 200 Å,
GaN layer is in the range of 20 ~ 200Å thickness, preferably 50 ~ 100Å thickness range;
A high frequency (RF) high electron mobility transistor comprising: In claim 21,
Under the high-quality crystalline Al _y Ga _1-y N support layer and the semi-insulating Al _y Ga _1-y N layer,
An AlN layer for lattice matching with the substrate is formed,
an Al _x Ga _1-x N layer as a strain matching layer between the AlN lattice matching layer and the Al _y Ga _1-y N support layer;
A high frequency (RF) high electron mobility transistor comprising: In claim 21,
The semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
It has a structure with Acceptor-H complex distribution,
It is composed of acceptor impurities such as Mg, Zn, C, Ir, Fe, etc.
A high frequency (RF) high electron mobility transistor having an impurity concentration in the range of 10 ¹⁹ to 10 ²¹ /cm 3 . In claim 21,
The surface protective layer;
It is formed by growing in the same c-axis direction on top of the semi-insulating Al _y Ga _1-y N layer,
To protect the surface of the Al _c Ga _1-c N barrier layer formed on the bottom
composed of GaN, AlGaN, and Al(In)N containing no impurities;
Composed of GaN, AlGaN, and Al(In)N containing acceptor impurities,
In addition, the Si _x N _y insulating film is formed by in-situ and ex-situ methods;
A high frequency (RF) high electron mobility transistor comprising: In claim 21,
Based on the semi-insulating Al _y Ga _1-y N layer formed in the same c-axis growth direction;
Has a discontinuous Acceptor-H complex distribution at the interface with the Al _y Ga _1-y N support layer formed at the bottom,
In addition, discontinuous Acceptor-H complex distribution at the interface of the Al _a Ga _1-a N electron confinement layer formed on the upper part;
A high frequency (RF) high electron mobility transistor comprising: In claim 21,
A semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
An Al _b Ga _1-b N channel layer formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer;
A two-dimensional gas (2DEG) layer having high carrier electron concentration and mobility at the interface with the AlN space layer formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer;
A high frequency (RF) high electron mobility transistor comprising: In claim 21,
A semi-insulating Al _y Ga _1-y N layer having a high resistance value of ~ MΩ or more;
An Al _b Ga _1-b N channel layer formed in the same c-axis growth direction as the semi-insulating Al _y Ga _1-y N layer;
On top of the Al _c Ga _1-c N barrier layer formed in the same c-axis growth direction as the Al _b Ga _1-b N channel layer,
a surface protective layer composed of a nitride semiconductor and an insulating film;
A field effect transistor comprising: In claim 21,
It has a high resistance value of ~ MΩ or more,
A semi-insulating Al _y Ga _1-y N layer formed in the growth direction of the c-axis,
Semiconductor materials including SiC, Sapphire, Silicon, etc. are used as substrates.
High frequency (RF) high electron mobility transistors and field effect transistors.

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