KR20230073195A - 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 및 반도체 장치의 제조 방법 - Google Patents

다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 및 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR20230073195A
KR20230073195A KR1020237008903A KR20237008903A KR20230073195A KR 20230073195 A KR20230073195 A KR 20230073195A KR 1020237008903 A KR1020237008903 A KR 1020237008903A KR 20237008903 A KR20237008903 A KR 20237008903A KR 20230073195 A KR20230073195 A KR 20230073195A
Authority
KR
South Korea
Prior art keywords
film
multilayer reflective
substrate
reflective film
absorber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237008903A
Other languages
English (en)
Korean (ko)
Inventor
마사노리 나카가와
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20230073195A publication Critical patent/KR20230073195A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020237008903A 2020-09-28 2021-09-15 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 및 반도체 장치의 제조 방법 Pending KR20230073195A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-162097 2020-09-28
JP2020162097 2020-09-28
PCT/JP2021/033837 WO2022065144A1 (ja) 2020-09-28 2021-09-15 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20230073195A true KR20230073195A (ko) 2023-05-25

Family

ID=80845392

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237008903A Pending KR20230073195A (ko) 2020-09-28 2021-09-15 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US20230314928A1 (https=)
JP (2) JP7793527B2 (https=)
KR (1) KR20230073195A (https=)
TW (2) TW202548407A (https=)
WO (1) WO2022065144A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024029410A1 (https=) * 2022-08-03 2024-02-08
WO2025120973A1 (ja) * 2023-12-05 2025-06-12 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016122751A (ja) 2014-12-25 2016-07-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに多層反射膜付き基板、反射型マスクブランク及び半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3939167B2 (ja) * 2002-02-28 2007-07-04 Ｈｏｙａ株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
US20040131947A1 (en) * 2003-01-07 2004-07-08 International Business Machines Corporation Reflective mask structure and method of formation
JP5239762B2 (ja) * 2008-11-13 2013-07-17 大日本印刷株式会社 反射型マスク、および、反射型マスク製造方法
KR102180712B1 (ko) * 2012-09-28 2020-11-19 호야 가부시키가이샤 다층 반사막 부착 기판의 제조방법
JP6033987B1 (ja) * 2014-12-19 2016-11-30 Hoya株式会社 マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法
JP6556029B2 (ja) * 2015-11-18 2019-08-07 Hoya株式会社 レジスト層付きマスクブランク、レジスト層付きマスクブランクの製造方法、及び、転写用マスクの製造方法
JP6739960B2 (ja) * 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
KR102429244B1 (ko) * 2017-02-27 2022-08-05 호야 가부시키가이샤 마스크 블랭크 및 임프린트 몰드의 제조 방법
US10962873B2 (en) * 2017-09-29 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask and method of manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016122751A (ja) 2014-12-25 2016-07-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに多層反射膜付き基板、反射型マスクブランク及び半導体装置の製造方法

Also Published As

Publication number Publication date
JP2026034634A (ja) 2026-02-27
TW202548407A (zh) 2025-12-16
JPWO2022065144A1 (https=) 2022-03-31
WO2022065144A1 (ja) 2022-03-31
TW202219625A (zh) 2022-05-16
JP7793527B2 (ja) 2026-01-05
US20230314928A1 (en) 2023-10-05
TWI899337B (zh) 2025-10-01

Similar Documents

Publication Publication Date Title
KR102937232B1 (ko) 반사형 마스크 블랭크, 반사형 마스크, 그리고, 반사형 마스크 및 반도체 장치의 제조 방법
KR102698817B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
US20230418148A1 (en) Multilayer reflective film-equipped substrate, reflective mask blank, reflective mask, and method for producing semiconductor device
KR20190102192A (ko) 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP7268211B2 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7061715B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR102002441B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
WO2020184473A1 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
US12591173B2 (en) Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
JP7612408B2 (ja) 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
JP7743590B2 (ja) 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体装置の製造方法
JP2026034634A (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP2021148928A (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP7271760B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
US20240160095A1 (en) Reflection-type mask blank, reflection-type mask, method for manufacturing reflection-type mask, and method for manufacturing semiconductor device
KR20250151382A (ko) 반사형 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000