TW202548407A - 光罩基底用基板、附多層反射膜之基板、反射型光罩基底、反射型光罩、透過型光罩基底及透過型光罩、以及半導體裝置之製造方法 - Google Patents

光罩基底用基板、附多層反射膜之基板、反射型光罩基底、反射型光罩、透過型光罩基底及透過型光罩、以及半導體裝置之製造方法

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Publication number
TW202548407A
TW202548407A TW114134753A TW114134753A TW202548407A TW 202548407 A TW202548407 A TW 202548407A TW 114134753 A TW114134753 A TW 114134753A TW 114134753 A TW114134753 A TW 114134753A TW 202548407 A TW202548407 A TW 202548407A
Authority
TW
Taiwan
Prior art keywords
film
substrate
reflective film
reflective
multilayer reflective
Prior art date
Application number
TW114134753A
Other languages
English (en)
Chinese (zh)
Inventor
中川真徳
Original Assignee
日商Hoya股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Hoya股份有限公司 filed Critical 日商Hoya股份有限公司
Publication of TW202548407A publication Critical patent/TW202548407A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW114134753A 2020-09-28 2021-09-27 光罩基底用基板、附多層反射膜之基板、反射型光罩基底、反射型光罩、透過型光罩基底及透過型光罩、以及半導體裝置之製造方法 TW202548407A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-162097 2020-09-28
JP2020162097 2020-09-28

Publications (1)

Publication Number Publication Date
TW202548407A true TW202548407A (zh) 2025-12-16

Family

ID=80845392

Family Applications (2)

Application Number Title Priority Date Filing Date
TW114134753A TW202548407A (zh) 2020-09-28 2021-09-27 光罩基底用基板、附多層反射膜之基板、反射型光罩基底、反射型光罩、透過型光罩基底及透過型光罩、以及半導體裝置之製造方法
TW110135745A TWI899337B (zh) 2020-09-28 2021-09-27 附多層反射膜之基板、反射型光罩基底、反射型光罩之製造方法及半導體裝置之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110135745A TWI899337B (zh) 2020-09-28 2021-09-27 附多層反射膜之基板、反射型光罩基底、反射型光罩之製造方法及半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US20230314928A1 (https=)
JP (2) JP7793527B2 (https=)
KR (1) KR20230073195A (https=)
TW (2) TW202548407A (https=)
WO (1) WO2022065144A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024029410A1 (https=) * 2022-08-03 2024-02-08
WO2025120973A1 (ja) * 2023-12-05 2025-06-12 Agc株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3939167B2 (ja) * 2002-02-28 2007-07-04 Hoya株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
US20040131947A1 (en) * 2003-01-07 2004-07-08 International Business Machines Corporation Reflective mask structure and method of formation
JP5239762B2 (ja) * 2008-11-13 2013-07-17 大日本印刷株式会社 反射型マスク、および、反射型マスク製造方法
KR102180712B1 (ko) * 2012-09-28 2020-11-19 호야 가부시키가이샤 다층 반사막 부착 기판의 제조방법
JP6033987B1 (ja) * 2014-12-19 2016-11-30 Hoya株式会社 マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法
JP2016122751A (ja) * 2014-12-25 2016-07-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに多層反射膜付き基板、反射型マスクブランク及び半導体装置の製造方法
JP6556029B2 (ja) * 2015-11-18 2019-08-07 Hoya株式会社 レジスト層付きマスクブランク、レジスト層付きマスクブランクの製造方法、及び、転写用マスクの製造方法
JP6739960B2 (ja) * 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
KR102429244B1 (ko) * 2017-02-27 2022-08-05 호야 가부시키가이샤 마스크 블랭크 및 임프린트 몰드의 제조 방법
US10962873B2 (en) * 2017-09-29 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask and method of manufacturing the same

Also Published As

Publication number Publication date
JP2026034634A (ja) 2026-02-27
JPWO2022065144A1 (https=) 2022-03-31
KR20230073195A (ko) 2023-05-25
WO2022065144A1 (ja) 2022-03-31
TW202219625A (zh) 2022-05-16
JP7793527B2 (ja) 2026-01-05
US20230314928A1 (en) 2023-10-05
TWI899337B (zh) 2025-10-01

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