KR20230058395A - 반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 - Google Patents
반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 Download PDFInfo
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- KR20230058395A KR20230058395A KR1020237006724A KR20237006724A KR20230058395A KR 20230058395 A KR20230058395 A KR 20230058395A KR 1020237006724 A KR1020237006724 A KR 1020237006724A KR 20237006724 A KR20237006724 A KR 20237006724A KR 20230058395 A KR20230058395 A KR 20230058395A
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- South Korea
- Prior art keywords
- film
- phase shift
- reflective mask
- light
- reflective
- Prior art date
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2020-148984 | 2020-09-04 | ||
JP2020148984 | 2020-09-04 | ||
PCT/JP2021/031257 WO2022050156A1 (ja) | 2020-09-04 | 2021-08-25 | 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20230058395A true KR20230058395A (ko) | 2023-05-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020237006724A KR20230058395A (ko) | 2020-09-04 | 2021-08-25 | 반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230185181A1 (ja) |
JP (1) | JPWO2022050156A1 (ja) |
KR (1) | KR20230058395A (ja) |
TW (1) | TW202225819A (ja) |
WO (1) | WO2022050156A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023210667A1 (ja) * | 2022-04-28 | 2023-11-02 | Agc株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法 |
JP7367901B1 (ja) | 2022-04-28 | 2023-10-24 | Agc株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法 |
WO2024029410A1 (ja) * | 2022-08-03 | 2024-02-08 | Agc株式会社 | 反射型マスクブランク及び反射型マスク |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06282063A (ja) | 1993-03-26 | 1994-10-07 | Hoya Corp | ハーフトーン型位相シフトマスク |
JP2942816B2 (ja) | 1996-04-12 | 1999-08-30 | エルジイ・セミコン・カンパニイ・リミテッド | ハーフトーン位相シフトマスクの構造及びその製造方法 |
JP2009141223A (ja) | 2007-12-07 | 2009-06-25 | Toshiba Corp | 反射型マスク |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4602430B2 (ja) * | 2008-03-03 | 2010-12-22 | 株式会社東芝 | 反射型マスク及びその作製方法 |
KR20110050427A (ko) * | 2008-07-14 | 2011-05-13 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 euv 리소그래피용 반사형 마스크 |
JP5881633B2 (ja) * | 2013-02-28 | 2016-03-09 | 株式会社東芝 | Euv露光用の光反射型フォトマスク及びマスクブランク、並びに半導体装置の製造方法 |
KR20210013008A (ko) * | 2018-05-25 | 2021-02-03 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법 |
JP7250511B2 (ja) * | 2018-12-27 | 2023-04-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
-
2021
- 2021-08-25 JP JP2022546271A patent/JPWO2022050156A1/ja active Pending
- 2021-08-25 KR KR1020237006724A patent/KR20230058395A/ko unknown
- 2021-08-25 WO PCT/JP2021/031257 patent/WO2022050156A1/ja active Application Filing
- 2021-09-01 TW TW110132438A patent/TW202225819A/zh unknown
-
2023
- 2023-02-09 US US18/166,715 patent/US20230185181A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06282063A (ja) | 1993-03-26 | 1994-10-07 | Hoya Corp | ハーフトーン型位相シフトマスク |
JP2942816B2 (ja) | 1996-04-12 | 1999-08-30 | エルジイ・セミコン・カンパニイ・リミテッド | ハーフトーン位相シフトマスクの構造及びその製造方法 |
JP2009141223A (ja) | 2007-12-07 | 2009-06-25 | Toshiba Corp | 反射型マスク |
Also Published As
Publication number | Publication date |
---|---|
US20230185181A1 (en) | 2023-06-15 |
JPWO2022050156A1 (ja) | 2022-03-10 |
TW202225819A (zh) | 2022-07-01 |
WO2022050156A1 (ja) | 2022-03-10 |
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