KR20230058395A - 반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 - Google Patents

반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 Download PDF

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Publication number
KR20230058395A
KR20230058395A KR1020237006724A KR20237006724A KR20230058395A KR 20230058395 A KR20230058395 A KR 20230058395A KR 1020237006724 A KR1020237006724 A KR 1020237006724A KR 20237006724 A KR20237006724 A KR 20237006724A KR 20230058395 A KR20230058395 A KR 20230058395A
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KR
South Korea
Prior art keywords
film
phase shift
reflective mask
light
reflective
Prior art date
Application number
KR1020237006724A
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English (en)
Korean (ko)
Inventor
히로요시 타나베
Original Assignee
에이지씨 가부시키가이샤
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Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20230058395A publication Critical patent/KR20230058395A/ko

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42Alignment or registration features, e.g. alignment marks on the mask substrates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020237006724A 2020-09-04 2021-08-25 반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 KR20230058395A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-148984 2020-09-04
JP2020148984 2020-09-04
PCT/JP2021/031257 WO2022050156A1 (ja) 2020-09-04 2021-08-25 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法

Publications (1)

Publication Number Publication Date
KR20230058395A true KR20230058395A (ko) 2023-05-03

Family

ID=80490940

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237006724A KR20230058395A (ko) 2020-09-04 2021-08-25 반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법

Country Status (5)

Country Link
US (1) US20230185181A1 (ja)
JP (1) JPWO2022050156A1 (ja)
KR (1) KR20230058395A (ja)
TW (1) TW202225819A (ja)
WO (1) WO2022050156A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023210667A1 (ja) * 2022-04-28 2023-11-02 Agc株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
JP7367901B1 (ja) 2022-04-28 2023-10-24 Agc株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
WO2024029410A1 (ja) * 2022-08-03 2024-02-08 Agc株式会社 反射型マスクブランク及び反射型マスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06282063A (ja) 1993-03-26 1994-10-07 Hoya Corp ハーフトーン型位相シフトマスク
JP2942816B2 (ja) 1996-04-12 1999-08-30 エルジイ・セミコン・カンパニイ・リミテッド ハーフトーン位相シフトマスクの構造及びその製造方法
JP2009141223A (ja) 2007-12-07 2009-06-25 Toshiba Corp 反射型マスク

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4602430B2 (ja) * 2008-03-03 2010-12-22 株式会社東芝 反射型マスク及びその作製方法
KR20110050427A (ko) * 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 euv 리소그래피용 반사형 마스크
JP5881633B2 (ja) * 2013-02-28 2016-03-09 株式会社東芝 Euv露光用の光反射型フォトマスク及びマスクブランク、並びに半導体装置の製造方法
KR20210013008A (ko) * 2018-05-25 2021-02-03 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06282063A (ja) 1993-03-26 1994-10-07 Hoya Corp ハーフトーン型位相シフトマスク
JP2942816B2 (ja) 1996-04-12 1999-08-30 エルジイ・セミコン・カンパニイ・リミテッド ハーフトーン位相シフトマスクの構造及びその製造方法
JP2009141223A (ja) 2007-12-07 2009-06-25 Toshiba Corp 反射型マスク

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Publication number Publication date
US20230185181A1 (en) 2023-06-15
JPWO2022050156A1 (ja) 2022-03-10
TW202225819A (zh) 2022-07-01
WO2022050156A1 (ja) 2022-03-10

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