KR20230052296A - 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 - Google Patents

감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 Download PDF

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KR20230052296A
KR20230052296A KR1020237009470A KR20237009470A KR20230052296A KR 20230052296 A KR20230052296 A KR 20230052296A KR 1020237009470 A KR1020237009470 A KR 1020237009470A KR 20237009470 A KR20237009470 A KR 20237009470A KR 20230052296 A KR20230052296 A KR 20230052296A
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South Korea
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KR1020237009470A
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Korean (ko)
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유타 오쿠아키
아키히로 카네코
마사후미 코지마
아키요시 고토
케이타 카토
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후지필름 가부시키가이샤
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Publication of KR20230052296A publication Critical patent/KR20230052296A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020237009470A 2020-09-29 2021-09-17 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 KR20230052296A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020163058 2020-09-29
JPJP-P-2020-163058 2020-09-29
PCT/JP2021/034387 WO2022070997A1 (ja) 2020-09-29 2021-09-17 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法

Publications (1)

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KR20230052296A true KR20230052296A (ko) 2023-04-19

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Country Status (5)

Country Link
US (1) US20230259029A1 (ja)
JP (1) JP7434592B2 (ja)
KR (1) KR20230052296A (ja)
TW (1) TW202225835A (ja)
WO (1) WO2022070997A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023062898A (ja) * 2021-10-22 2023-05-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物及び酸拡散制御剤

Family Cites Families (18)

* Cited by examiner, † Cited by third party
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JPH06130667A (ja) * 1992-10-19 1994-05-13 Japan Synthetic Rubber Co Ltd 感放射線性組成物
JPH08202039A (ja) * 1995-01-30 1996-08-09 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JP3173368B2 (ja) * 1995-04-12 2001-06-04 信越化学工業株式会社 高分子化合物及び化学増幅ポジ型レジスト材料
JP3541525B2 (ja) * 1995-09-20 2004-07-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3345869B2 (ja) * 1995-12-01 2002-11-18 ジェイエスアール株式会社 感放射線性組成物
KR100190012B1 (ko) * 1996-01-12 1999-06-01 윤종용 화학 증폭형 레지스트용 베이스 수지의 제조 방법
JP3796559B2 (ja) * 1997-10-08 2006-07-12 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR100252061B1 (ko) * 1998-04-20 2000-06-01 윤종용 포토레지스트용 중합체, 이를 포함하는 포토레지스트 조성물 및이의 제조방법
KR100308423B1 (ko) * 1999-09-07 2001-09-26 주식회사 동진쎄미켐 화학 증폭 레지스트용 폴리머 및 이를 이용한 레지스트 조성물
JP2007206638A (ja) * 2006-02-06 2007-08-16 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP6002430B2 (ja) * 2012-05-08 2016-10-05 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物
JP6076029B2 (ja) * 2012-10-19 2017-02-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP6031369B2 (ja) * 2013-01-31 2016-11-24 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6370265B2 (ja) * 2015-07-09 2018-08-08 信越化学工業株式会社 重合性モノマー、高分子化合物、ポジ型レジスト材料、及びパターン形成方法
WO2018056369A1 (ja) * 2016-09-26 2018-03-29 富士フイルム株式会社 レジスト組成物、パターン形成方法及び電子デバイスの製造方法
JP7210959B2 (ja) * 2017-10-16 2023-01-24 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
KR102652547B1 (ko) * 2019-01-28 2024-03-29 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
JP7478573B2 (ja) * 2019-04-10 2024-05-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法

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TW202225835A (zh) 2022-07-01
JPWO2022070997A1 (ja) 2022-04-07
JP7434592B2 (ja) 2024-02-20
US20230259029A1 (en) 2023-08-17
WO2022070997A1 (ja) 2022-04-07

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