KR20230024301A - 금속 기판의 표면 처리를 위한 수성 염기성 에칭 조성물 - Google Patents

금속 기판의 표면 처리를 위한 수성 염기성 에칭 조성물 Download PDF

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Publication number
KR20230024301A
KR20230024301A KR1020227046318A KR20227046318A KR20230024301A KR 20230024301 A KR20230024301 A KR 20230024301A KR 1020227046318 A KR1020227046318 A KR 1020227046318A KR 20227046318 A KR20227046318 A KR 20227046318A KR 20230024301 A KR20230024301 A KR 20230024301A
Authority
KR
South Korea
Prior art keywords
alkyl
hydrogen
group
aqueous basic
etching composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227046318A
Other languages
English (en)
Korean (ko)
Inventor
라르스 콜만
하이코 브루너
Original Assignee
아토테크 도이칠란트 게엠베하 운트 콤파니 카게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아토테크 도이칠란트 게엠베하 운트 콤파니 카게 filed Critical 아토테크 도이칠란트 게엠베하 운트 콤파니 카게
Publication of KR20230024301A publication Critical patent/KR20230024301A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/34—Alkaline compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Weting (AREA)
KR1020227046318A 2020-06-12 2021-06-10 금속 기판의 표면 처리를 위한 수성 염기성 에칭 조성물 Pending KR20230024301A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20179696.8A EP3922755A1 (en) 2020-06-12 2020-06-12 An aqueous basic etching composition for the treatment of surfaces of metal substrates
EP20179696.8 2020-06-12
PCT/EP2021/065663 WO2021250182A1 (en) 2020-06-12 2021-06-10 An aqueous basic etching composition for the treatment of surfaces of metal substrates

Publications (1)

Publication Number Publication Date
KR20230024301A true KR20230024301A (ko) 2023-02-20

Family

ID=71094162

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227046318A Pending KR20230024301A (ko) 2020-06-12 2021-06-10 금속 기판의 표면 처리를 위한 수성 염기성 에칭 조성물

Country Status (6)

Country Link
US (1) US20230220558A1 (https=)
EP (2) EP3922755A1 (https=)
JP (1) JP7757324B2 (https=)
KR (1) KR20230024301A (https=)
CN (1) CN115702261A (https=)
WO (1) WO2021250182A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230243041A1 (en) * 2022-01-28 2023-08-03 Texas Instruments Incorporated Etching compositions

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3668131A (en) * 1968-08-09 1972-06-06 Allied Chem Dissolution of metal with acidified hydrogen peroxide solutions
US3809588A (en) * 1969-11-03 1974-05-07 R Zeblisky Peroxy containing compositions
US4311551A (en) * 1979-04-12 1982-01-19 Philip A. Hunt Chemical Corp. Composition and method for etching copper substrates
JPS5928035Y2 (ja) * 1979-10-09 1984-08-14 凸版印刷株式会社 残渣回収装置
US4784785A (en) * 1987-12-29 1988-11-15 Macdermid, Incorporated Copper etchant compositions
JPH0718472A (ja) * 1993-07-06 1995-01-20 Ebara Yuujiraito Kk 銅・銅合金材のための浸漬エッチング液
JP3252186B2 (ja) * 1993-07-19 2002-01-28 大塚化学株式会社 エッチング剤
DE10066028C2 (de) 2000-07-07 2003-04-24 Atotech Deutschland Gmbh Kupfersubstrat mit aufgerauhten Oberflächen
CN101392376A (zh) 2007-09-19 2009-03-25 长瀬化成株式会社 蚀刻组合物
JP4521460B2 (ja) * 2008-02-20 2010-08-11 メック株式会社 エッチング液及びこれを用いた銅配線の形成方法
EP2099268A1 (en) 2008-03-07 2009-09-09 Atotech Deutschland Gmbh Non-etching adhesion composition, method of preparing a work piece and method of forming coppper structures on a circuit carrier substrate
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
JP6599322B2 (ja) * 2013-10-21 2019-10-30 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面の残留物を除去するための洗浄配合物
KR20230129193A (ko) 2013-12-06 2023-09-06 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
EP3159432B1 (en) 2015-10-23 2020-08-05 ATOTECH Deutschland GmbH Surface treatment agent for copper and copper alloy surfaces
CN109778194A (zh) * 2019-03-22 2019-05-21 深圳市祺鑫天正环保科技有限公司 碱性蚀刻再生液的添加剂和碱性蚀刻再生液

Also Published As

Publication number Publication date
JP7757324B2 (ja) 2025-10-21
EP3922755A1 (en) 2021-12-15
US20230220558A1 (en) 2023-07-13
CN115702261A (zh) 2023-02-14
WO2021250182A1 (en) 2021-12-16
EP4165228A1 (en) 2023-04-19
JP2023529004A (ja) 2023-07-06

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