KR20220020346A - 기판 처리 장치, 기판 검사 방법 및 기억 매체 - Google Patents

기판 처리 장치, 기판 검사 방법 및 기억 매체 Download PDF

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Publication number
KR20220020346A
KR20220020346A KR1020227000733A KR20227000733A KR20220020346A KR 20220020346 A KR20220020346 A KR 20220020346A KR 1020227000733 A KR1020227000733 A KR 1020227000733A KR 20227000733 A KR20227000733 A KR 20227000733A KR 20220020346 A KR20220020346 A KR 20220020346A
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South Korea
Prior art keywords
unit
substrate
film
wafer
film thickness
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Ceased
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KR1020227000733A
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English (en)
Korean (ko)
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야스아키 노다
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도쿄엘렉트론가부시키가이샤
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Publication of KR20220020346A publication Critical patent/KR20220020346A/ko
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/27Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • H01L22/12
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/10Scanning
    • G01N2201/104Mechano-optical scan, i.e. object and beam moving
    • G01N2201/1042X, Y scan, i.e. object moving in X, beam in Y
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020227000733A 2019-06-10 2020-06-09 기판 처리 장치, 기판 검사 방법 및 기억 매체 Ceased KR20220020346A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2019-108148 2019-06-10
JP2019108148 2019-06-10
JPJP-P-2020-093162 2020-05-28
JP2020093162 2020-05-28
PCT/JP2020/022612 WO2020250868A1 (ja) 2019-06-10 2020-06-09 基板処理装置、基板検査方法、及び記憶媒体

Publications (1)

Publication Number Publication Date
KR20220020346A true KR20220020346A (ko) 2022-02-18

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KR1020227000733A Ceased KR20220020346A (ko) 2019-06-10 2020-06-09 기판 처리 장치, 기판 검사 방법 및 기억 매체

Country Status (6)

Country Link
US (1) US20220252507A1 (https=)
JP (1) JP7282171B2 (https=)
KR (1) KR20220020346A (https=)
CN (1) CN113994199B (https=)
TW (1) TWI848121B (https=)
WO (1) WO2020250868A1 (https=)

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JP7431694B2 (ja) * 2020-07-28 2024-02-15 キヤノン株式会社 情報処理装置、膜形成装置、物品の製造方法、およびプログラム
JP7482018B2 (ja) * 2020-12-24 2024-05-13 東京エレクトロン株式会社 推定モデル作成装置、推定モデル作成方法、及び記憶媒体
DE102021111707B3 (de) * 2021-05-05 2022-06-02 Sioptica Gmbh Verfahren und Anordnung zum zerstörungsfreien Überprüfen einer Oberflächenstruktur
JP7171092B1 (ja) * 2021-11-08 2022-11-15 株式会社シンクロン 成膜制御装置、成膜装置及び成膜方法
JP7822791B2 (ja) * 2022-01-12 2026-03-03 東京エレクトロン株式会社 基板検査装置、基板検査方法、及び、基板検査プログラム
JP7793427B2 (ja) * 2022-03-01 2026-01-05 株式会社Screenホールディングス 基板処理装置及び基板処理システム並びに基板処理方法
DE102023106815B3 (de) * 2023-03-17 2024-05-23 Confovis Gmbh Verfahren zum Erstellen eines Schichtdickenvariationsprofils einer Oberflächenschicht eines Substrates
CN117147441B (zh) * 2023-07-18 2024-04-12 镭友芯科技(苏州)有限公司 一种气体探测器及制备方法
CN121773325A (zh) * 2023-08-23 2026-03-31 东京毅力科创株式会社 基片检查装置、基片检查方法和存储介质
CN119555020A (zh) * 2025-02-05 2025-03-04 四川省开璞环保包装制品有限公司 一种环保无纺布表面涂层检测方法及系统

Citations (1)

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JP3450651B2 (ja) * 1997-06-10 2003-09-29 キヤノン株式会社 研磨方法及びそれを用いた研磨装置
US7217573B1 (en) * 1999-10-05 2007-05-15 Hitachi, Ltd. Method of inspecting a DNA chip
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US7095511B2 (en) * 2000-07-06 2006-08-22 Filmetrics, Inc. Method and apparatus for high-speed thickness mapping of patterned thin films
US6633831B2 (en) * 2000-09-20 2003-10-14 Kla Tencor Technologies Methods and systems for determining a critical dimension and a thin film characteristic of a specimen
JP3616003B2 (ja) * 2000-09-29 2005-02-02 東京エレクトロン株式会社 塗布膜形成方法及びその装置
JP3625761B2 (ja) * 2000-11-06 2005-03-02 東京エレクトロン株式会社 膜厚測定装置及びその方法
JP2003100598A (ja) * 2001-09-25 2003-04-04 Dainippon Screen Mfg Co Ltd 基板処理装置制御システムおよび基板処理装置
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TW202113331A (zh) 2021-04-01
JPWO2020250868A1 (https=) 2020-12-17
WO2020250868A1 (ja) 2020-12-17
CN113994199B (zh) 2024-10-18
US20220252507A1 (en) 2022-08-11
JP7282171B2 (ja) 2023-05-26
TWI848121B (zh) 2024-07-11
CN113994199A (zh) 2022-01-28

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