KR20210021199A - Variable low resistance area based electronic device and controlling thereof - Google Patents

Abstract

Provided are a variable low resistance area-based electronic element and a controlling method thereof, which have improved electrical properties, and are easily applied to various uses. According to one embodiment of the present invention, the variable low resistance area-based electronic element includes: a first electrode set including a plurality of first electrodes spaced apart from each other; a second electrode spaced apart from the first electrodes, and including an area overlapping the first electrodes; a first active layer formed between the first electrode set and the second electrode, and including a spontaneous polarization material; at least one first variable low resistance area including an area corresponding to a boundary of a polarization area formed in the first active layer and having a lower electrical resistance than other adjacent areas by applying an electric field to the first active layer through the first electrode set; a third electrode set spaced apart from the second electrode, including an area overlapping the second electrode, and including a plurality of third electrodes spaced apart from each other; a second active layer formed between the second electrode and the third electrode set, and including a spontaneous polarization material; and at least one second variable low resistance area including an area corresponding to a boundary of a polarization area formed in the second active layer and having a lower electrical resistance than other adjacent areas by applying an electric field to the second active layer through the third electrode set.

Description

Variable low resistance area based electronic device and controlling method thereof

The present invention relates to an electronic device using a variable low resistance region and a control method thereof.

As technology advances and interest in the convenience of people's life increases, attempts to develop various electronic products are becoming more active.

In addition, these electronic products are becoming smaller and more integrated, and the places where they are used are increasing widely.

Such electronic products include various electrical devices, for example, CPU, memory, and various other electrical devices. These devices may include various types of electric circuits.

For example, electrical devices are used in products in various fields, such as home sensor devices for IoT and bioelectronic devices for ergonomics, as well as computers and smartphones.

On the other hand, according to the recent speed of technological development and the rapid improvement of the living standards of users, the use and application fields of such electric devices rapidly increase, and the demand thereof is also increasing accordingly.

According to this trend, there is a limit to implementing and controlling electronic circuits that are easily and quickly applied to various electric devices that are commonly used.

On the other hand, memory devices, particularly nonvolatile memory devices, are widely used as information storage and/or processing devices of various electronic devices such as cameras and communication devices as well as computers.

In particular, many developments have been made in terms of the life and speed of such a memory device. Most of the problems are in securing the life and speed of the memory, but there is a limitation in implementing a memory device with improved memory life.

The present invention can provide an electronic device based on a variable low-resistance region and a method for controlling the same, which has improved electrical characteristics and can be easily applied to various uses.

An embodiment of the present invention is a first electrode set having a plurality of first electrodes disposed to be spaced apart from each other, and a second electrode formed to include a region spaced apart from the plurality of first electrodes and overlapping the plurality of first electrodes , A first active layer formed between the first electrode set and the second electrode and including a spontaneous polarization material, polarization formed in the first active layer by applying an electric field to the first active layer through the first electrode set At least one first fluctuating low-resistance region including a region corresponding to the boundary of the region and having a lower electrical resistance than other adjacent regions, a plurality of regions spaced apart from the second electrode and disposed to be spaced apart from each other with regions overlapping the second electrode A third electrode set having a third electrode of, a second active layer formed between the second electrode and the third electrode set and including a spontaneously polarizable material, and an electric field in the second active layer through the third electrode set An electronic device based on a variable low-resistance region including at least one second variable low-resistance region corresponding to a boundary of a polarization region formed in the second active layer and having an electrical resistance lower than that of other adjacent regions by applying is disclosed.

In this embodiment, at least one of the plurality of first electrodes of the first electrode set may be formed to be electrically connected to at least one of the plurality of second third electrodes of the second third electrode set.

In this embodiment, the first fluctuation low resistance region may include one formed to contact the second electrode.

In the present embodiment, the second variable low resistance region may include one formed to be in contact with the second electrode.

In another embodiment of the present invention, a first electrode set having a plurality of first electrodes disposed to be spaced apart from each other, a second electrode formed to include a region spaced apart from the plurality of first electrodes and overlapping the plurality of first electrodes , A first active layer formed between the first electrode set and the second electrode and comprising a spontaneous polarization material, a plurality of first active layers spaced apart from the second electrode and disposed to be spaced apart from each other having a region overlapping the second electrode With respect to a variable low-resistance region-based electronic device comprising a third electrode set having a third electrode of and a second active layer formed between the second electrode and the third electrode set and comprising a spontaneously polarizable material, the Forming a polarized region of the active layer by applying an electric field to the first active layer through a first electrode set, and a first variable low resistance including a region having a lower electrical resistance than other adjacent regions corresponding to the boundary of the polarized region The step of forming a region may include forming a current flow between the first electrode set and the second electrode through the first variable low resistance region.

In the present embodiment, the step of forming a polarized region of the active layer by applying an electric field to the second active layer through the third electrode set, and a region having a lower electrical resistance than other adjacent regions corresponding to the boundary of the polarized region. Forming a second variable low resistance region to form a current flow between the third electrode set and the second electrode through the second variable low resistance region.

In the present embodiment, the first fluctuation low resistance region may include one formed to contact the second electrode.

In the present embodiment, the second variable low-resistance region may include one formed to be in contact with the second electrode.

Other aspects, features, and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

The electronic device using the variable low resistance region and the control method thereof according to the present invention can be easily applied to a variety of applications, can implement an electronic device with improved electrical characteristics, and can implement an electronic device capable of precise control.

1 is a schematic plan view of an exemplary structure shown to describe an electronic device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1.
3 is an enlarged view of K of FIG. 2.
4A to 4C are diagrams for explaining a method of controlling the structure of FIG. 1.
5 is a schematic plan view of another exemplary structure shown to describe an electronic device according to an embodiment of the present invention.
6 is a cross-sectional view taken along the line VI-VI of FIG. 5.
7A to 7D are views for explaining a method of controlling the structure of FIG. 5.
8 is a schematic plan view of another exemplary structure illustrated to describe an electronic device according to an embodiment of the present invention.
9 is a cross-sectional view taken along line II-II of FIG. 8.
10 to 14 are diagrams for explaining the operation of the structure of FIG. 8.
15 and 16 are cross-sectional views of another exemplary structure illustrating an electronic device according to an embodiment of the present invention.
17 is a cross-sectional view schematically showing another example of the structure of FIG. 15.
18 is a cross-sectional view schematically showing another example of the structure of FIG. 15.
19 is a cross-sectional view schematically showing another example of the structure of FIG. 15.
FIG. 20 is a schematic cross-sectional view illustrating an example of a section II′ of FIG. 15.
FIG. 21 is a cross-sectional view schematically illustrating another example of the section II′ of FIG. 15.
22 is a cross-sectional view schematically illustrating another example of the cross-section II′ of FIG. 15.
FIG. 23 is a cross-sectional view schematically illustrating another example of the section II′ of FIG. 15.
FIG. 24 is a schematic cross-sectional view illustrating another example of the cross-section II′ of FIG. 15.
FIG. 25 is a cross-sectional view schematically illustrating another example of the section II′ of FIG. 15.
26 is a schematic cross-sectional view showing an electronic device according to an embodiment of the present invention.
FIG. 27 is a schematic partial plan view of FIG. 26 in the direction K.
FIG. 28 is a schematic side view of FIGS. 25 and 26 viewed from the L direction.
29 and 30 are diagrams illustrating a modified example of the electronic device of FIG. 26.
31 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.
32 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to embodiments of the present invention shown in the accompanying drawings.

Since the present invention can apply various transformations and have various embodiments, specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them will be apparent with reference to the embodiments described later in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding constituent elements are assigned the same reference numerals, and redundant descriptions thereof will be omitted. .

In the following embodiments, terms such as first and second are not used in a limiting meaning, but for the purpose of distinguishing one component from another component.

In the following examples, the singular expression includes the plural expression unless the context clearly indicates otherwise.

In the following embodiments, terms such as include or have means that the features or elements described in the specification are present, and do not preclude the possibility of adding one or more other features or elements in advance.

In the drawings, components may be exaggerated or reduced in size for convenience of description. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, and the present invention is not necessarily limited to what is shown.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

When a certain embodiment can be implemented differently, a specific process order may be performed differently from the described order. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the described order.

1 is a schematic plan view of an exemplary structure shown to describe an electronic device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and FIG. 3 is It is an enlarged view of K of 2.

Referring to FIGS. 1 and 2, the electronic device 10 for describing the electronic device of the present embodiment may include an active layer 11, an application electrode 12, and a variable low resistance region VL.

The active layer 11 may include a spontaneous polarization material. For example, the active layer 11 may include an insulating material and may include a ferroelectric material. That is, the active layer 11 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 11 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 11 has an ABX3 structure, where A may include one or more materials selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and B May include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 11 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

Since the active layer 11 may be formed by using various other ferroelectric materials, descriptions of all examples thereof will be omitted. In addition, when the active layer 11 is formed, the ferroelectric material may be doped with various other materials to include additional functions or to improve electrical properties.

The active layer 11 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. In addition, the active layer 11 can maintain a polarized state even when the applied electric field is removed.

The application electrode 12 may be formed to apply an electric field to the active layer 11, and for example, a voltage may be applied to the active layer 11.

As an alternative embodiment, the application electrode 12 may be formed to come into contact with the upper surface of the active layer 11.

In addition, the application electrode 12 may be formed to apply voltages of various sizes to the active layer 11 and to control the time of application of the voltage.

As an alternative embodiment, the application electrode 12 may be a gate electrode.

For example, the application electrode 12 may be electrically connected to a power source (not shown) or a power control unit.

The application electrode 12 may include various materials, and may include a material having high electrical conductivity. For example, the application electrode 12 may be formed using various metals.

For example, the application electrode 12 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials, or may be formed using a nitride of these materials.

In addition, as an optional embodiment, the application electrode 12 may include a laminate structure.

Although not shown, as an alternative embodiment, one or more insulating layers may be further disposed between the application electrode 12 and the active layer 11.

The fluctuation low resistance region VL is a region formed in the active layer 11 and is a region through which current can flow, and may be formed as a path of a current having a linear shape around the application electrode 12 as shown in FIG. 1. have.

Specifically, the low-variable resistance region VL is a region in which electrical resistance is lower than that of other regions adjacent to the low-variable resistance region VL among the regions of the active layer 11.

In addition, after forming the variable low resistance region VL through the application electrode 12, even if the electric field through the application electrode 12 is removed, for example, even if the voltage is removed, the polarization state of the active layer 11 is Since it is maintained, the fluctuation low resistance region VL is maintained, and a state in which a path of current is formed can be maintained.

Through this, various electronic circuits can be configured.

The variable low resistance region VL has a height HVL, and this height HVL may correspond to the overall thickness of the active layer 11.

The height HVL of the variable low resistance region VL may be proportional to the strength of the electric field, for example, the magnitude of the voltage when the electric field is applied through the application electrode 12. At least, the magnitude of the electric field may be larger than the inherent anti-electric field of the active layer 11.

The variable low resistance region VL is a region formed when a voltage is applied to the active layer 11 through the application electrode 12, and can be changed, for example, created, destroyed, or moved through the control of the application electrode 12. .

The active layer 11 may include a first polarization region 11F having a first polarization direction, and the variable low resistance region VL may be formed at the boundary of the first polarization region 11F.

In addition, a second polarization region 11R having a second polarization direction may be included so as to be adjacent to the first polarization region 11F, and the variable low resistance region VL is at the boundary of the second polarization region 11R. Can be formed. The second direction may be at least a different direction from the first direction, and may be, for example, a direction opposite to the first direction.

For example, the variable low resistance region VL may be formed between the first polarization region 11F and the second polarization region 11R. Through this, a first polarization region 11F having a polarization direction in a first direction (e.g., from bottom to top based on FIG. 2) around the fluctuating low resistance region VL and opposite to the first direction. A second polarization region 11R having a polarization direction in a direction (eg, from top to bottom based on FIG. 2) may be disposed to be distinguished.

The variable low resistance region VL may have a width WVL in one direction, which may be proportional to the moving distance of the variable low resistance region VL.

In addition, this width WVL may be the width of a planar area defined as the variable low resistance area VL, which can be said to correspond to the width of the first polarization area 11F.

In addition, the variable low resistance region VL may be formed to correspond to the entire side of the boundary line of the first polarization region 11F, and may have a thickness TVL1 in a direction away from the side surface of the first polarization region 11F. have.

As an optional embodiment, the thickness TVL1 may be 0.1 to 0.3 nanometers.

4A to 4C are diagrams for explaining a method of controlling the structure of FIG. 1.

Referring to FIG. 4A, the active layer 11 may include a second polarization region 11R having a second polarization direction. As an alternative embodiment, a polarization state of the active layer 11 as shown in FIG. 4A may be formed by applying an initializing electric field through the application electrode 12.

Then, referring to FIG. 4B, a first polarization region 11F is formed in the active layer 11. As a specific example, a first polarization region 11F may be first formed in a region overlapping the application electrode 12 so as to correspond to the width of the application electrode 12.

It is larger than the anti-electric field of the active layer 11 through the application electrode 12, and has a size such that the height HVL of the first polarization region 11F can be formed to at least correspond to the entire thickness of the active layer 11 An electric field may be applied to the active layer 11.

The polarization direction of one region of the second polarization region 11R of the active layer 11 may be changed through the application of the electric field through the application electrode 12 to change the polarization direction to the first polarization region 11F.

As an alternative embodiment, the growth rate in the height HVL direction of the first polarization region 11F may be very fast, for example, it may grow at a rate of 1 km/sec (second).

Then, if the electric field through the applied electrode 12 is continuously maintained, that is, over time, the first polarization region 11F moves in the horizontal direction (H), that is, in a direction orthogonal to the height (HVL), and its size increases. I can. That is, the area of the second polarization area 11R may be gradually converted into the first polarization area 11F.

As an alternative embodiment, the growth rate of the first polarization region 11F in the horizontal direction H may be very fast, for example, it may grow at a rate of 1 m/sec (second).

Through this, the size of the variable low resistance region VL can be controlled, for example, the width of the variable low resistance region VL and corresponding to the growth distance of the first polarization region 11F, so the growth speed and electric field It can be proportional to the holding time. For example, the growth distance may be proportional to the product of the growth speed and the duration of the electric field.

Further, the growth speed of the first polarized region 11F may be proportional to the sum of the growth speed in the height HVL direction and the growth speed in the horizontal direction H.

Therefore, the size of the fluctuating low resistance region VL can be adjusted as desired by controlling the electric field holding time.

Specifically, as shown in FIG. 4C, the first polarization region 11F spreads and increases, and accordingly, the fluctuation low resistance region VL can also move in a direction away from the application electrode 12.

In this embodiment, an electric field is applied to the active layer through the application electrode to form a first polarization region having a first polarization direction different from the second polarization direction in the active layer, and at the boundary between the first polarization region and the second polarization region. A corresponding fluctuation low resistance region can be formed. Such a low-variable resistance region is a region having a low resistance and a region having a reduced resistance, and can be a path of current, so that an electronic circuit can be easily formed.

In addition, in this embodiment, by controlling the magnitude of the electric field through the applied electrode, for example, by controlling the magnitude of the voltage, the height of the fluctuating low-resistance region can be determined, and specifically, the height corresponding to the total thickness of the active layer is controlled can do.

In addition, it is possible to determine the size, for example, the width of the variable low resistance region by controlling the time to maintain the electric field through the applied electrode. The size of the path of the current flow can be easily controlled through the control of the size of the fluctuation low resistance region.

In addition, even if the electric field through the applied electrode is removed, the polarization state of the polarized region is maintained, so the path of the current can be easily maintained. When the polarization region is expanded by continuously maintaining the electric field through the applied electrode, the already formed fluctuation is reduced. In the resistance region, resistance may be lowered so that current does not flow.

Through this, it is possible to control the dissipation of the current path, and as a result, it is possible to easily control the flow of the current.

The structure of this embodiment can be used for various purposes, for example, one or more electrodes can be connected so as to contact a variable low resistance region.

5 is a schematic plan view of another exemplary structure shown to describe an electronic device according to an embodiment of the present invention.

6 is a cross-sectional view taken along the line VI-VI of FIG. 5.

5 and 6, the electronic device 20 for describing the electronic device of the present embodiment may include an active layer 21, an application electrode 22, and variable low resistance regions VL1, VL2, and VL3. .

The active layer 21 may include a spontaneous polarization material. For example, the active layer 21 may include an insulating material and may include a ferroelectric material. That is, the active layer 21 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional embodiment, the active layer 21 may include a perovskite-based material, and a detailed description thereof will be omitted since it is the same as the above-described embodiment.

The application electrode 22 may be formed to apply an electric field to the active layer 21, and for example, a voltage may be applied to the active layer 21. Details are the same as in the above-described embodiment, and thus will be omitted.

The variable low resistance regions VL1, VL2, and VL3 may include a first variable low resistance region VL1, a second variable low resistance region VL2, and a third variable low resistance region VL3.

The first fluctuating low resistance region VL1 may have a larger width than the second fluctuating low resistance region VL2, and the second fluctuating low resistance region VL2 may have a larger width than the third fluctuating low resistance region VL3. have. For example, the region surrounded by the first fluctuating low resistance region VL1 has a larger width than the region surrounded by the second fluctuation low resistance region VL2, and the region surrounded by the second fluctuation low resistance region VL2 has a third fluctuation. It may have a larger width than a region surrounded by the low resistance region VL3.

As an optional embodiment, the first fluctuating low-resistance region VL1 is disposed outside the second fluctuating low-resistance region VL2, and the second fluctuating low-resistance region VL2 is the outer circumference of the third fluctuating low-resistance region VL3. Can be placed on

The first fluctuating low-resistance region VL1, the second fluctuating low-resistance region VL2, and the third fluctuating low-resistance region VL3 are regions formed in the active layer 21 and are regions through which current can flow, and have a linear current. It can be formed with a path of.

Specifically, the first fluctuating low-resistance region VL1, the second fluctuating low-resistance region VL2, and the third fluctuating low-resistance region VL3 are among the regions of the active layer 21. This is a region in which electrical resistance is lower than that of other regions adjacent to the second low fluctuation resistance region VL2 and the third low fluctuation resistance region VL3.

In addition, after forming the first fluctuating low resistance region VL1, the second fluctuating low resistance region VL2, and the third fluctuating low resistance region VL3 through the application electrode 22, Since the polarization state of the active layer 21 is maintained even when the electric field is removed or voltage is removed, the first fluctuating low resistance region VL1, the second fluctuating low resistance region VL2, and the third fluctuating low resistance region (VL3) is maintained, and the state in which the path of the current is formed can be maintained.

Through this, various electronic circuits can be configured. For example, at least a portion of a memory device capable of storing one or more data may be configured.

The variable low resistance regions VL1, VL2, and VL3 have a height HVL, and this height HVL may correspond to the overall thickness of the active layer 21.

The active layer 21 may include first polarization regions 21F1 and 21F3 having a first polarization direction, and the fluctuation low resistance regions VL1, VL2, and VL3 are the boundaries of these first polarization regions 21F1 and 21F3. Can be formed in

In addition, second polarization regions 21R1 and 21R2 having a second polarization direction may be included so as to be adjacent to the first polarization regions 21F1 and 21F3, and the variable low resistance region VL is the second polarization region 21R1. , 21R2). The second direction may be at least a different direction from the first direction, and may be, for example, a direction opposite to the first direction.

For example, the first variable low resistance region VL1 may be formed between the first polarization region 21F1 and the second polarization region 21R1.

In addition, the second fluctuation low resistance region VL2 may be formed between the first polarization region 21F1 and the second polarization region 21R2.

In addition, the third low-variation resistance region VL3 may be formed between the first polarization region 21F3 and the second polarization region 21R2.

7A to 7D are views for explaining a method of controlling the structure of FIG. 5.

Referring to FIG. 7A, the active layer 21 may include a second polarization region 21R having a second polarization direction. As an alternative embodiment, a polarization state of the active layer 21 as shown in FIG. 7A may be formed by applying an initializing electric field through the application electrode 22.

Then, referring to FIG. 7B, a first polarization region 21F is formed in the active layer 21. As a specific example, the first polarization region 21F is first formed in a region overlapping the application electrode 22 so as to correspond to the width of the application electrode 22 and then grows in a horizontal direction to form a state as shown in FIG. 7B. In addition, the first polarization region 21R of FIG. 7A may be reduced to change into the first polarization region 21R1 of FIG. 7B.

A first low-variation resistance region VL1 may be formed between the first polarization region 21F and the second polarization region 21R1.

Then, referring to FIG. 7C, the polarization direction of a portion of the first polarization region 21F is converted into a second polarization region 21R2 having a polarization direction in the second direction by applying an electric field in the opposite direction to that of FIG. 7B. I can. For example, a second polarization region 21R2 having a polarization direction in a second direction opposite to the first polarization direction of the first polarization region 21F may be formed.

In addition, through this, the size of the first polarization region 21F of FIG. 7B may be reduced and may be changed to the first polarization region 21F1 of the shape shown in FIG. 7C.

A second variable low resistance region VL2 may be formed between the second polarization region 21R2 and the first polarization region 21F1.

Since the polarization state is maintained, the first fluctuating low resistance region VL1 may be maintained as it is.

Then, referring to FIG. 7D, the polarization direction of a portion of the second polarization region 21R2 is converted into a first polarization region 21F3 having a polarization direction in the first direction by applying an electric field in the opposite direction to that of FIG. 7C. can do. For example, a first polarization region 21F3 having a polarization direction in a first direction opposite to the second polarization direction of the second polarization region 21R2 may be formed.

In addition, through this, the size of the second polarization region 21R2 of FIG. 7C may be reduced to change into the second polarization region 21R2 of the shape shown in FIG. 7D.

A third variable low resistance region VL3 may be formed between the second polarization region 21R2 and the first polarization region 21F3.

Since the polarization state is maintained, the first fluctuating low-resistance region VL1 and the second fluctuating low-resistance region VL2 are maintained as they are, and a third fluctuating low-resistance region VL3 may be added thereto.

In this embodiment, an electric field is applied to the active layer through the application electrode to form a first polarization region having a first polarization direction different from the second polarization direction in the active layer, and at the boundary between the first polarization region and the second polarization region. A corresponding fluctuation low resistance region can be formed. Such a low-variable resistance region is a region having a low resistance and a region having a reduced resistance, and can be a path of current, so that an electronic circuit can be easily formed.

In addition, according to the present exemplary embodiment, the magnitude of the electric field through the application electrode can be controlled and the direction of the electric field can be controlled, thereby forming a plurality of first polarization regions or a plurality of second polarization regions with respect to the active layer.

A plurality of low-variable resistance regions may be formed at a boundary line between the plurality of first polarization regions or the plurality of second polarization regions. Since each of the plurality of fluctuating low resistance regions can form a path of current, it is possible to easily generate and control electronic circuits of various types and uses.

For example, since the number of variable low resistance regions can be selectively applied around the applied electrode, various current paths can be formed, and a memory for storing various data according to the current path can be implemented.

8 is a schematic plan view of another exemplary structure shown to describe an electronic device according to an embodiment of the present invention, and FIG. 9 is a cross-sectional view taken along line II-II of FIG. 8.

8 and 9, the electronic device 100 of the present embodiment may include an active layer 110, an application electrode 120, a variable low resistance region VL, and one or more connection electrode units 131 and 132. have.

The active layer 110 may include a spontaneous polarization material. For example, the active layer 110 may include an insulating material and may include a ferroelectric material. That is, the active layer 110 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 110 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 110 has an ABX3 structure, where A may include one or more materials selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and B May include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 110 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

Since the active layer 110 may be formed by using various other ferroelectric materials, descriptions of all examples thereof will be omitted. In addition, when the active layer 110 is formed, the ferroelectric material may be doped with various other materials to include an additional function or to improve electrical characteristics.

The active layer 110 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. In addition, the active layer 110 may maintain a polarized state even when the applied electric field is removed.

The application electrode 120 may be formed to apply an electric field to the active layer 110, and for example, a voltage may be applied to the active layer 110.

As an alternative embodiment, the application electrode 120 may be formed to be in contact with the upper surface of the active layer 110.

In addition, the application electrode 120 may apply voltages of various sizes to the active layer 110 and may be formed to control the time of voltage application.

As an alternative embodiment, the application electrode 120 may be a gate electrode.

For example, the application electrode 120 may be electrically connected to a power source (not shown) or a power control unit.

The application electrode 120 may include various materials, and may include a material having high electrical conductivity. For example, the application electrode 120 may be formed using various metals.

For example, the application electrode 120 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials, or may be formed using a nitride of these materials.

In addition, as an optional embodiment, the application electrode 120 may include a laminate structure.

The connection electrode parts 131 and 132 may include one or more electrode members, and for example, may include a first connection electrode member 131 and a second connection electrode member 132.

The connection electrode portions 131 and 132 may be formed on the active layer 110, for example, may be formed to be spaced apart from the application electrode 120 on the upper surface of the active layer 110, and as an alternative embodiment, the active layer 110 ) Can be formed to contact.

The first connection electrode member 131 and the second connection electrode member 132 may be formed using various conductive materials. For example, the first connection electrode member 131 and the second connection electrode member 132 may be formed to contain aluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten.

As an alternative embodiment, the first connection electrode member 131 and the second connection electrode member 132 may include a structure in which a plurality of conductive layers are stacked.

As an optional embodiment, the first connection electrode member 131 and the second connection electrode member 132 may be formed using a conductive metal oxide, for example, indium oxide (eg, In ₂ O ₃ ), tin oxide. (E.g. _{SnO 2} ), zinc oxide (e.g. ZnO), indium tin oxide alloy (e.g. In ₂ O _{3 -SnO 2} ) or indium zinc oxide alloy (e.g. In ₂ O ₃ -ZnO) Can be formed.

As an alternative embodiment, the connection electrode units 131 and 132 may be terminal members including input/output of electrical signals.

In addition, as a specific example, the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode units 131 and 132 may include a source electrode or a drain electrode.

10 to 14 are diagrams for explaining the operation of the electronic device of FIG. 8.

10 is a diagram showing a state in which a first electric field is applied through the application electrode 120, FIG. 11 is a cross-sectional view taken along line VIII-VIII of FIG. 10, and FIG. 12 is an enlarged view of K of FIG. 11 to be.

Referring to FIGS. 10 to 14, when a first electric field is applied to the active layer 110 through the application electrode 120, at least one region of the active layer 110 may include a polarization region 110F.

The polarization region 110F may have a shape surrounding the application electrode 120 around the application electrode 120. The polarization region 110F may have a boundary line.

The first low fluctuation resistance region VL1 may be formed in a region corresponding to the side of the boundary line. Referring to FIG. 10, the application electrode 120 may be formed in a linear shape surrounding the application electrode 120.

For example, the first variable low resistance region VL1 may have a first width WVL1 in one direction so as to surround the application electrode 120.

In addition, the first variable low resistance region VL1 may be formed to correspond to the entire side of the boundary line of the polarization region 110F, and may have a thickness TVL1 in a direction away from the side surface of the polarization region 110F.

As an optional embodiment, the thickness TVL1 may be 0.1 to 0.3 nanometers.

As an alternative embodiment, before the first voltage is applied to the active layer 110 through the application electrode 120, a process of applying an initialization electric field to the active layer 110 may be performed.

The process of applying such an initializing electric field to the active layer 110 may include converting all regions of the active layer 110 to polarization in a direction different from the polarization region 110F, for example, a polarization region in the opposite direction. .

Then, the polarization region 110F may be formed in one region by applying an electric field in the opposite direction.

The first variable low-resistance region VL1 formed at the boundary of the polarization region 110F of the active layer 110 may be changed to a region having a lower resistance than other regions of the active layer 110. For example, the first low fluctuation resistance region VL1 may have a lower resistance than the polarization region 110F of the active layer 110 and a region of the active layer 110 surrounding the first fluctuation low resistance region VL1.

Through this, the first fluctuating low resistance region VL1 may form a current path.

As an alternative embodiment, the first variable low resistance region VL1 may correspond to a region of a plurality of domain walls provided in the active layer 110.

In addition, the first fluctuating low resistance region VL1 may be maintained continuously as long as the polarization state of the polarization region 110F of the active layer 110 is maintained. That is, even when the first voltage applied to the active layer 110 through the application electrode 120 is removed, the state of the variable low resistance region VL1, that is, the low resistance state may be maintained.

As shown in FIGS. 10 and 11, a current path may be formed through the first variable low resistance region VL1. However, since the connection electrode portions 131 and 132 do not correspond to the first fluctuating low resistance region VL1, current flow through the connection electrode portions 131 and 132 may not occur.

FIG. 13 is a diagram illustrating a state in which the first electric field is further maintained for a predetermined period of time through the application electrode 120, and FIG. 14 is a cross-sectional view taken along line XI-XI of FIG. 13.

13 and 14, the holding time of the first electric field through the application electrode 120 increases, so that the polarization region 110F of FIGS. 10 and 11 moves in the horizontal direction, thereby increasing the polarization region 110F. A second low fluctuation resistance region VL2 that is larger than the first low fluctuation resistance region VL1 may be formed.

For example, by continuously maintaining the voltage applied in FIGS. 10 and 11 for a predetermined period of time, a structure as shown in FIGS. 13 and 14 may be formed.

The polarization region 110F may have a shape surrounding the application electrode 120 around the application electrode 120. The polarization region 110F may have a boundary line. The second low fluctuation resistance region VL2 may be formed in a region corresponding to a side surface of the boundary line of the polarization region 110F. Referring to FIG. 13, the application electrode 120 may be formed in a linear shape surrounding the application electrode 120.

For example, the second variable low-resistance region VL2 may have a second width WVL2 in one direction so as to surround the applied electrode 120, and the second width WVL2 is greater than the first width WVL1. I can.

In addition, the second fluctuating low resistance region VL2 may be formed to correspond to the entire side of the boundary line of the polarization region 110F, and may have a thickness in a direction away from the side surface of the polarization region 110F, and an optional embodiment As such, the thickness may be 0.1 to 0.3 nanometers.

The second variable low resistance region VL2 formed at the boundary of the polarization region 110F of the active layer 110 may be changed to a region having a lower resistance than other regions of the active layer 110. For example, the second low-variable resistance region VL2 may have a lower resistance than a region of the active layer 110 surrounding the polarization region 110F of the active layer 110 and the second low-variability region VL2.

Through this, the second fluctuation low resistance region VL2 may form a current path.

As an alternative embodiment, the second variable low resistance region VL2 may correspond to one region of a plurality of domain walls provided in the active layer 110.

In addition, the second fluctuating low resistance region VL2 may be maintained continuously as long as the polarization state of the active layer 110 is maintained. That is, even if the second voltage applied to the active layer 110 through the application electrode 120 is removed, the state of the second variable low resistance region VL2, that is, the low resistance state may be maintained.

Therefore, a current path may be formed through the second fluctuation low resistance region VL2.

In addition, as a specific example, the connection electrode portions 131 and 132 are formed to correspond to the second variable low resistance region VL2, for example, the first connection electrode member 131 of the connection electrode portions 131 and 132 and The second connection electrode members 132 may be disposed to be in contact with the upper surface of the second variable low resistance region VL2 while being spaced apart from each other.

Through this, current may flow through the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode units 131 and 132.

In addition, various electrical signals can be generated. For example, when the electric field in the states of FIGS. 13 and 14 is more continuously applied, that is, when the application time increases, the second fluctuating low resistance region VL2 is further moved and the first connection electrode member 131 and the second 2 It may escape from the connection electrode member 132. Accordingly, current may not flow through the first connection electrode member 131 and the second connection electrode member 132.

In addition, as an optional embodiment, an initialization process for the entire active layer 110 may be performed.

Then, when an electric field is again applied to the active layer 110 through the application electrode 120, current flows through the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode units 131 and 132. I can.

The electronic circuit of the present embodiment may apply voltages of various sizes to the active layer through the application electrode, and control the applied time.

Through this, a polarization region can be formed in the active layer with a region having a desired size, and a variable low resistance region can be formed at the boundary of the polarization region.

When a connection electrode part is formed to correspond to such a fluctuating low-resistance region, for example, when the connection electrode part is in contact, a current may flow through the connection electrode part, and even if the voltage is removed, the active layer containing the ferroelectric material can maintain a polarized state. The fluctuating low-resistance region of the boundary can also be maintained, so that current can continue to flow.

In addition, a voltage may be applied to the active layer through the application electrode so that the variable low resistance region is changed into a polarization region, and the current does not flow through the connection electrode portion through which the current flows.

By controlling the voltage of the applied electrode, the flow of current can be controlled, and the electronic circuit can be used for various purposes through the control of the current flow.

As an alternative embodiment, the electronic circuit can be used as a memory.

For example, it can be used as a memory by defining the flow of current as 1 and not flowing as 0, and as a specific example, since current can flow even when voltage is removed, it can also be used as a nonvolatile memory.

In addition, the electronic circuit may constitute a circuit unit that generates and transmits various signals, and may be used as a switching element.

In addition, since it can be applied in a simple structure to other parts requiring control of electrical signals, it can be applied to various fields such as variable circuits, CPUs, and biochips.

15 and 16 are cross-sectional views of another exemplary structure illustrating an electronic device according to an embodiment of the present invention.

15 and 16, an electronic device 200 according to an embodiment of the present invention includes a first electrode 210, a second electrode 220 facing the first electrode 210, and a first electrode ( An active layer 230 interposed between the 210 and the second electrode 220 may be included.

At least one of the first electrode 210 and the second electrode 220 includes a first surface S1 closest to the active layer 230 and a second surface S2 spaced farthest from the active layer 230, and In this case, the size of the horizontal cross-sectional area on the first surface S1 may be smaller than the size of the horizontal cross-sectional area on the second surface S2. As an example, at least one of the first electrode 210 and the second electrode 220 may include at least one protrusion 212 protruding in a direction toward the other electrode.

15 and 16 illustrate that the first electrode 210 includes one protrusion 212 as an example, but the present invention is not limited thereto, and the protrusion 212 is attached to the second electrode 220. It may be formed or may be formed on both the first electrode 210 and the second electrode 220. In addition, a plurality of protrusions 212 may be formed. The protrusion 212 may be integrally formed with the first electrode 210.

In addition, the configuration of the protrusion 212 may be applied to electrodes of embodiments described later.

The first electrode 210 and the second electrode 220 are made of a metal material such as platinum, gold, aluminum, silver, or copper, a conductive polymer such as PEDOT:PSS or polyaniline, and indium oxide (e.g., In ₂ O ₃ ), tin oxide (e.g. SnO ₂ ), zinc oxide (e.g. ZnO), indium oxide tin oxide alloy (e.g. In ₂ O _3- SnO ₂ ) or indium oxide zinc oxide (e.g. In ₂ O _3- Metal oxides such as ZnO) may be included.

The active layer 230 may include a spontaneous polarization material. For example, the active layer 230 may include an insulating material and may include a ferroelectric material. That is, the active layer 230 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 230 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 230 has an ABX3 structure, where A may include at least one material selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and B May include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 230 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

The active layer 230 has spontaneous polarization, and the degree and direction of polarization may be controlled according to the application of an electric field. In addition, the active layer 230 may maintain a polarized state even when the applied electric field is removed.

Meanwhile, the active layer 230 may include a first region A1 vertically overlapping with the first surface S1 and a second region A2 that is an outer edge of the first region A1. As described above, since the horizontal cross-sectional area of the first surface S1 closest to the active layer 230 is narrower than the horizontal cross-sectional area of the second surface S2, the active layer 230 is vertical to the first surface S1. The thickness in the overlapping first area A1 may be smaller than the thickness in the second area A2.

As shown in FIG. 15, the active layer 230 may be in a state of having polarization in the first direction. For example, both the first region A1 and the second region A2 may have the same polarization in the first direction. In this state, current may not flow between the first electrode 210 and the second electrode 220 by the active layer 230.

However, when a first voltage greater than a coercive voltage at which the charge of the hysteresis loop of the active layer 230 is 0 is applied to the first electrode 210 and the second electrode 220, as shown in FIG. Likewise, the polarization direction of the first region A1 is changed by the first electric field generated between the first electrode 210 and the second electrode 220, and the active layer 230 has the first region A1 and the second It may be divided into an area A2.

At this time, since the magnitude of the voltage for changing the polarization direction of the domain of the active layer 230 increases in proportion to the thickness of the active layer 230, the second region A2 having a thickness greater than that of the first region A1 The polarization direction of the active layer 230 is not changed. That is, as a first voltage greater than the coercive voltage of the active layer 230 is applied to the first electrode 210 and the second electrode 220, the polarization in the second direction different from the first direction only in the first region A1 Can have As an example, the first direction and the second direction may be opposite to each other.

On the other hand, when the polarization directions in the first region A1 and the second region A2 are opposite, the unit lattice structure of the active layer 230 is localized at the boundary between the first region A1 and the second region A2. As it is changed to, an electrical polarization different from that of the first region A1 and the second region A2 occurs, whereby free electrons accumulate at the boundary between the first region A1 and the second region A2, resulting in current. A fluctuating low-resistance region C that can flow may be created.

The fluctuating low resistance region C as described above is formed at the boundary between the first region A1 and the second region A2, and the first region A1 is changed by the area of the first surface S1. , The position where the variable low resistance region C is generated may also be adjusted by the area of the first surface S1.

On the other hand, when a second voltage for reversing the polarization direction of the first region A1 is applied to the first electrode 210 and the second electrode 220, between the first electrode 210 and the second electrode 220 The first region A1 may have polarization in the first direction again by the generated second electric field. The second voltage may be greater than the coercive voltage of the active layer 230 and may have a polarity opposite to the first voltage. Accordingly, a difference in polarization between the first region A1 and the second region A2 may be eliminated.

When the polarization difference between the first region A1 and the second region A2 disappears, the fluctuating low resistance region C between the first region A1 and the second region A2 disappears. This state is the same as the state shown in FIG. 15. That is, since the first electrode 210 and the second electrode 220 are insulated by the active layer 230, even if a voltage is applied between the first electrode 210 and the second electrode 220, the first electrode Current does not flow between 210 and the second electrode 220.

Accordingly, by controlling the voltage applied to the first electrode 210 and the second electrode 220, the flow of current in the electronic device 200 can be controlled, and the electronic device 200 can be controlled by controlling the current flow. Can be used for various purposes.

For example, the electronic device 200 may be used as a nonvolatile memory. More specifically, as shown in FIG. 16, a first voltage greater than a coercive voltage is applied to the first electrode 210 and the second electrode 220, thereby changing the polarization direction of the first region A1. After the change, even if no voltage is applied to the first electrode 210 and the second electrode 220, the polarization direction of the first region A1 remains unchanged. This state is set to a logic value of '1'. It can be understood as being input.

On the other hand, when the polarization direction of the first region A1 is changed, a fluctuating low resistance region C is formed. Therefore, when a read voltage is applied between the first electrode 210 and the second electrode 220, the current is easily reduced. It flows, whereby the logical value '1' can be read. In this case, in order to prevent the polarization of the first region A1 from being affected by the read voltage, the read voltage may be smaller than the coercive voltage of the active layer 230.

In addition, when a second voltage is applied to the first electrode 210 and the second electrode 220 to return the polarization direction of the first region A1, the polarization of the first region A1 and the second region A2 The direction becomes the same, and this state can be viewed as inputting a logic value of '0'.

In addition, when the polarization directions of the first region A1 and the second region A2 are the same, the fluctuating low resistance region C between the first region A1 and the second region A2 disappears. Accordingly, even if a voltage is applied between the first electrode 210 and the second electrode 220, current does not flow between the first electrode 210 and the second electrode 220, whereby the logical value '0' Can be read.

That is, when the electronic device 200 according to the present invention is used as a memory, the polarization state of the first region A1 is selectively changed by applying voltage to the first electrode 210 and the second electrode 220. , By measuring the current flowing in the fluctuating low-resistance region (C) that is generated or extinguished accordingly, the logical values '1' and '0' can be read. Can be improved.

In addition, according to the present invention, the fluctuation low resistance region C generated by the application of the electric field may be formed only in a certain region. Therefore, the variable low-resistance region C is formed only in a limited position without causing an increase or expansion of the domain region in which the polarization state changes in proportion to the application time of the electric field. Therefore, when applied to a nonvolatile memory, the variable called the electric field application time is There is an advantage that you do not need to consider.

In addition, as the first electrode 210 and the second electrode 220 are stacked, the variable low resistance region C is formed with the shortest distance connecting the first electrode 210 and the second electrode 220. , As the size of the device is reduced, integration may be possible. In addition, since the magnitude of the current flowing when reading the logical values '1' and '0' is different, the readability of the data can be improved.

In addition, the electronic device 200 according to the present invention may constitute a circuit unit that generates and transmits various signals, and may also be used as a switching device. For example, it is possible to control ON/OFF of the current flow by the generation and disappearance of the fluctuating low resistance region C. In addition, since the electronic device 200 according to the present invention can be applied in a simple structure to a portion requiring control of an electrical signal, it can be applied to various fields such as variable circuits, CPUs, and biochips.

As another example, the electronic device 200 according to the present invention may be used in a capacitor capable of forming various current path control regions. For example, if the distance between the first electrode 210 and the second electrode 220 facing each other is formed in various ways, it varies according to the magnitude of the electric field applied to the first electrode 210 and the second electrode 220 The position at which the low resistance region C is formed may be variously adjusted, whereby the current path control regions may be variously formed in the storage battery.

17 to 19 are cross-sectional views schematically illustrating another example of the electronic device of FIG. 15, respectively.

First, referring to FIG. 17, the electronic device 200B includes a first electrode 210, a second electrode 220 facing the first electrode 210, a first electrode 210 and a second electrode 220. An active layer 230, a first intermediate layer 291, and a second intermediate layer 292 interposed therebetween may be included.

At least one of the first electrode 210 and the second electrode 220 may include a first surface S1 closest to the active layer 230 and a second surface S2 spaced farthest from the active layer 230. I can. In this case, the size of the horizontal cross-sectional area on the first surface S1 may be smaller than the size of the horizontal cross-sectional area on the second surface S2.

For example, as shown in FIG. 17, the first electrode 210 may include a protrusion 212 protruding toward the second electrode 220. In addition, at least a portion of the protrusion 212 may have a tapered shape. The tapered shape may include a first surface S1. For example, the protrusion 212 may have a cone shape. However, the shape of the horizontal cross section of the protrusion 212 is not limited to a circle, and may be various, such as a triangle, a square, or a polygon.

As such, when the protrusion 212 has a tapered shape including the first surface S1, a voltage for changing the polarization of the first region A1 is applied between the first electrode 210 and the second electrode 220 In this case, since the electric field may be concentrated between the first surface S1 and the second electrode 220, the polarization of the first region A1 can be changed more quickly and effectively.

The configuration of the protrusion 212 of FIG. 17 may be selectively applied to electrodes included in the embodiments of FIGS. 26 to 32 to be described later.

18 illustrates an electronic device 200C having a structure in which the first electrode 210 has a tapered shape similar to that of FIG. 17. However, FIG. 18 shows an example in which the first electrode 210 has an overall tapered shape.

The tapered configuration of the first electrode 210 of FIG. 18 may be selectively applied to electrodes included in the embodiments of FIGS. 26 to 32 to be described later.

Also, FIG. 19 shows an example in which both the first electrode 210 and the second electrode 220 have a tapered shape. Specifically, the first electrode 210 and the second electrode 220 of the electronic device 200D of FIG. 19 each include a first surface S1 and a second surface S2, and the first electrode 210 The first region A1 of the active layer 230 may be partitioned between the first surface S1 of the and the first surface S1 of the second electrode 220. In this case, the area of the first surface S1 of the first electrode 210 and the first surface S1 of the second electrode 220 facing each other is preferably the same for effective electric field induction.

The tapered configuration of the first electrode 210 and the second electrode 220 of FIG. 19 may be selectively applied to electrodes included in the embodiments of FIGS. 26 to 32 to be described later.

20 to 25 are cross-sectional views schematically illustrating another example of the electronic device of FIG. 15, respectively.

20 to 25 illustrate the shape of the protrusion 212 of the first electrode 210, but as described above, the present invention relates to the first electrode (210 of FIG. 15) and/or the second electrode (FIG. 15). 220 may have a tapered shape as a whole, and the protrusion 212 may be integrally formed with the first electrode (210 of FIG. 15) and/or the second electrode (220 of FIG. 15), so the following protrusion 212 ) May be understood as a part of the first electrode 210 and/or the second electrode 220.

In addition, the configurations of FIGS. 20 to 25 may be selectively applied to electrodes included in the embodiments of FIGS. 26 to 32 to be described later.

FIG. 20 is a schematic cross-sectional view illustrating an example of the cross-section line II′ of FIG. 15.

20 shows an example in which both the protrusion 212 and the active layer 230 of the electronic device 200E have a circular cross section.

FIG. 21 is a schematic cross-sectional view of another example of a cross-section line II′ of FIG. 15.

21 illustrates an example in which the protrusion 212 of the electronic device 200F has a rectangular cross section and the active layer 230 has a circular cross section.

FIG. 22 is a schematic cross-sectional view illustrating another example of the cross-section line II′ of FIG. 15.

22 illustrates an example in which both the protrusion 212 and the active layer 230 of the electronic device 200G have a rectangular cross section. That is, the protrusion 212 and the active layer 230 are not limited to the above shape, but may have various shapes.

23 is a cross-sectional view schematically showing another example of the cross-section line II′ of FIG. 15.

23 shows an electronic device 200H including a first protrusion 212a and a second protrusion 212b. The first protrusion 212a and the second protrusion 212b may be spaced apart from each other, and different voltages may be applied. For example, when the second electrode (220 in FIG. 15) is integrally formed, two variable low-resistance regions (VL in FIG. 16) may be formed, so when the electronic element 200H is used as a memory, a logical value '0', '1', '2', and '3' can be recorded and read.

FIG. 24 is a schematic cross-sectional view of another example of the cross-section II' of FIG. 15.

24 illustrates an electronic device 200I including a first protrusion 212a, a second protrusion 212b, a third protrusion 212c, and a fourth protrusion 212d. The first to fourth protrusions 212a to 212d may be electrically separated from each other. In addition, the first protrusion 212a, the second protrusion 212b, the third protrusion 212c, and the second electrode (220 of FIG. 15) facing the fourth protrusion 212d may be separated. Accordingly, when the electronic device 200H is used as a memory, the amount of data processed by the electronic device 200H may increase.

FIG. 25 is a schematic cross-sectional view illustrating another example of the cross-section II′ of FIG. 15.

25 shows an example in which the protrusion 212 of the electronic device 200J extends in one direction.

In addition, the various pattern shapes of the protrusions described above may be selectively applied as they are to the embodiments to be described later, and details thereof will not be described in detail in the following embodiments.

26 is a schematic cross-sectional view showing an electronic device according to an embodiment of the present invention, FIG. 27 is a schematic partial plan view as viewed from the direction K in FIG. 26, and FIG. 28 is It is a schematic side view.

26 to 28, the electronic device 300 of the present embodiment includes a first electrode set 310A, a second electrode 310B, a first active layer 310C, a first variable low resistance region VL14A, and A third electrode set 320A, a second active layer 320C, and a second variable low resistance region 320C may be included.

The first electrode set 310A may have a plurality of first electrodes 311A, 312A, 313A, and 314A disposed to be spaced apart from each other. Although four first electrodes are shown in FIG. 26, the present invention is not limited thereto and may include a variety of first electrodes.

The plurality of first electrodes 311A, 312A, 313A, 314A of the first electrode set 310A may be arranged spaced apart along one direction, for example, in the first direction (for example, the X-axis direction in the drawing). ) Can be arranged along.

The plurality of first electrodes 311A, 312A, 313A, 314A of the first electrode set 310A may be formed to apply a voltage to the first active layer 310C. For example, the plurality of first electrodes 311A, 312A, 313A, 314A may be formed of a metal material such as gold, aluminum, silver, or copper, a conductive polymer such as PEDOT:PSS or polyaniline, and indium oxide (e.g., In ₂ O ₃ ), tin oxide (e.g. SnO ₂ ), zinc oxide (e.g. ZnO), indium tin oxide alloy (e.g. In ₂ O _3- SnO ₂ ) or indium oxide zinc oxide alloy (e.g. In ₂ O ₃ -ZnO) and the like may be included.

The plurality of first electrodes 311A, 312A, 313A, and 314A may be individually controlled. Through individual control of the plurality of first electrodes 311A, 312A, 313A, 314A, the region and number of voltage application through the plurality of first electrodes 311A, 312A, 313A, 314A may be determined.

As an optional embodiment, the plurality of first electrodes 311A, 312A, 313A, and 314A may have a shape elongated along one direction, for example, may have a shape elongated along a direction perpendicular to the ground. . As a specific example, as illustrated in FIG. 27, the first electrode 314A may have a length extending along the second direction (eg, the Y-axis direction of FIG. 27 ).

As an optional embodiment, a plurality of first electrodes 311A, 312A, and 313A, not shown, may also have a shape that is extended to have a length spaced apart from the first electrode 314A, for example, the first electrode 314A. ) And may have a length extending along the second direction (eg, the Y-axis direction of FIG. 27).

As an optional embodiment, the plurality of first electrodes 311A, 312A, 313A, and 314A may each include a body portion 10ma, a first protrusion 10pa1, and a second protrusion 10pa2.

The body portion 10ma is a main area of the plurality of first electrodes 311A, 312A, 313A, and 314A, and may have a shape extending in one direction as shown in FIG. 27 as an optional embodiment.

The first protrusion 10pa1 may protrude from the main body 10ma and may have a smaller width than the main body 10ma, and may protrude toward the second electrode 310B. Through this, the first fluctuating low resistance region VL14A in the region of the first active layer 310C between the first protrusion 10pa1 and the second electrode 310B can be easily formed through application of a small voltage in a short time. I can.

As an optional embodiment, the second protrusion 10pa2 protrudes from the main body 10ma and may have a smaller width than the main body 10ma, and may protrude to face the opposite direction to the first protrusion 10pa1. .

The second electrode 310B may be disposed to be spaced apart from the plurality of first electrodes 311A, 312A, 313A, and 314A.

In addition, the second electrode 310B may be formed to include a region overlapping the plurality of first electrodes 311A, 312A, 313A, and 314A.

The second electrode 310B may have a length extending along the first direction.

For example, the second electrode 310B may have an elongated shape along a direction in which the plurality of first electrodes 311A, 312A, 313A, and 314A are arranged.

As an alternative embodiment, the second electrode 310B may extend to have a length in a direction crossing each of the plurality of first electrodes 311A, 312A, 313A, and 314A. As a specific example, as shown in FIG. 27, the first electrode 311A, 312A, 313A, 314A may have a shape that intersects with the extension direction or extends in a direction that is orthogonal to, for example, the Y-axis direction of FIG. 27. have.

As an alternative embodiment, the second electrode 310B may include a body portion 10mb, a first protrusion 10pb1, and a second protrusion 10pb2.

The body portion 10mb is a main area of the second electrode 310B and may have a shape extending in one direction as shown in FIG. 27 as an optional embodiment.

The first protrusion 10pb1 may protrude from the main body 10mb, may have a width smaller than that of the main body 10mb, and may protrude toward the first electrode set 310A. Through this, the first fluctuating low resistance region VL14A is easily formed by applying a small voltage to the region of the first active layer 310C between the first protrusion 10pb1 and the first electrode set 310A. Can be.

In addition, the first protrusion 10pa1 of the first electrode set 310A and the first protrusion 10pb1 of the second electrode 310B protrude so as to face each other, so that the first active layer 310C between the first protrusions 10pa1 The fluctuation low resistance region VL14A can be easily formed.

As an alternative embodiment, the second protrusion 10pb2 may protrude from the main body 10mb and may have a smaller width than the main body 10mb, and may protrude toward the third electrode set 320A. Through this, the second fluctuating low-resistance region VL24A is easily formed by applying a small voltage to the region of the second active layer 320C between the second protrusion 10pb2 and the third electrode set 320A. Can be.

In addition, the first protrusion 20pa1 of the third electrode set 320A to be described later and the second protrusion 10pb2 of the second electrode 310B protrude to face each other, so that a second active layer 320C therebetween The fluctuation low resistance region VL24A can be easily formed.

The first active layer 310C may be formed between the first electrode set 310A and the second electrode 310B and may include a spontaneous polarization material.

The first active layer 310C may be formed using the same material as the active layer of the above-described embodiments.

For example, the first active layer 310C may include an insulating material and may include a ferroelectric material. A first active layer (310C) as an alternative embodiment may comprise a perovskite-based material, for example, may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the first active layer 310C has an ABX3 structure, where A may include at least one material selected from inorganic materials such as Cs and Ru capable of forming a CnH2n+1 alkyl group and a perovskite solar cell structure, and , B may include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the first active layer 310C is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC(NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , ( CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )( HC(NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) It may include.

The first active layer 310C has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. In addition, even when the applied electric field is removed, the first active layer 310C may maintain a polarized state.

The first variable low resistance region VL14A corresponds to the boundary of the polarization region fa1 formed in the first active layer 310C by applying an electric field to the first active layer 310C through the first electrode set 310A. And a region having lower electrical resistance than other adjacent regions.

26 to 28 exemplarily show that the first variable low resistance region VL14A is formed by applying a voltage to the first electrode 314A of the first electrode set 310A.

The present invention is not limited thereto, and each of the plurality of first electrodes 311A, 312A, 313A, 314A through individual control of the plurality of first electrodes 311A, 312A, 313A, 314A of the first electrode set 310A A plurality of first fluctuating low resistance regions corresponding to and spaced apart from each other may be selectively formed.

The first variable low resistance region VL14A may contact the second electrode 310B. Through this, a current flow may be formed from each of the plurality of first electrodes 311A, 312A, 313A, and 314A to the second electrode 310B.

Through this, various functions of the electronic device 300 may be implemented.

Details of the first low fluctuation resistance region VL14A can be sufficiently understood through the configuration of the low fluctuation resistance region in the above-described embodiments, and a more detailed description thereof will be omitted.

The third electrode set 320A is a plurality of third electrodes 321A, 322A, 323A, 324A that are spaced apart from the second electrode 310B and have a region overlapping with the second electrode 310B and are disposed to be spaced apart from each other. Can have

Although four third electrodes are shown in FIG. 26, the present invention is not limited thereto and may include a variety of third electrodes.

The plurality of third electrodes 321A, 322A, 323A, 324A of the third electrode set 320A may be arranged spaced apart along one direction, for example, in the first direction (for example, the X-axis direction in the drawing). ) Can be arranged along.

The plurality of third electrodes 321A, 322A, 323A, 324A of the third electrode set 320A may be formed to apply a voltage to the second active layer 320C. For example, the plurality of third electrodes 321A, 322A, 323A, 324A may be formed of the same material as the first electrode set 310A, and may be formed of a metal material such as gold, aluminum, silver, or copper, PEDOT:PSS or Conductive polymers such as polyaniline, indium oxide (e.g. In ₂ O ₃ ), tin oxide (e.g. SnO ₂ ), zinc oxide (e.g. ZnO), indium oxide tin oxide alloy (e.g. In ₂ O _{3) -} SnO ₂₎ or indium zinc oxide alloy (for example, may include a metal oxide such as In ₂ O ₃ -ZnO).

The plurality of third electrodes 321A, 322A, 323A, and 324A may be individually controlled. Through individual control of the plurality of third electrodes 321A, 322A, 323A, 324A, the region and number of voltage application through the plurality of third electrodes 321A, 322A, 323A, 324A may be determined.

As an optional embodiment, the plurality of third electrodes 321A, 322A, 323A, 324A may have a shape elongated along one direction, for example, may have a shape elongated along a direction perpendicular to the ground. .

As a specific example, the plurality of third electrodes 321A, 322A, 323A, 324A is in a direction parallel to the plurality of first electrodes 311A, 312A, 313A, 314A of the first electrode set 310A, for example, in a second direction. (For example, it may have a length extending along the Y-axis direction in FIG. 27).

As an optional embodiment, the plurality of third electrodes 321A, 322A, 323A, 324A may be disposed to include a region overlapping with the plurality of first electrodes 311A, 312A, 313A, 314A of the first electrode set 310A. I can.

As an optional embodiment, the plurality of third electrodes 321A, 322A, 323A, and 324A may each include a body portion 20ma, a first protrusion 20pa1, and a second protrusion 20pa2.

The body portion 20ma is a main region of the plurality of third electrodes 321A, 322A, 323A, and 324A, and may have a shape extending in one direction as an optional embodiment.

The first protrusion 20pa1 protrudes from the main body 20ma and may have a smaller width than the main body 20ma, and may protrude toward the second electrode 310B. Through this, the second fluctuating low resistance region VL24A can be easily formed in a region of the second active layer 320C between the first protrusion 20pa1 and the second electrode 310B through application of a small voltage in a short time. I can.

As an optional embodiment, the second protrusion 20pa2 protrudes from the main body 20ma and may have a smaller width than the main body 20ma, and may protrude in a direction opposite to the first protrusion 20pa1. .

Second active layer 320C

The second active layer 320C may be formed between the second electrode 310B and the third electrode set 320A and may include a spontaneous polarization material.

The second active layer 320C may be formed using the same material as the active layer of the above-described embodiments.

For example, the second active layer 320C may include an insulating material and may include a ferroelectric material. A second active layer (320C) as an alternative embodiment may comprise a perovskite-based material, for example, may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the second active layer 320C has an ABX3 structure, where A may include one or more materials selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and , B may include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the first active layer 310C is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC(NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , ( CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )( HC(NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) It may include.

The second active layer 320C has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. In addition, the second active layer 320C may maintain a polarized state even when the applied electric field is removed.

As an optional embodiment, the first active layer 310C and the second active layer 320C may be connected in at least one region, for example, through a connection active layer region CUA adjacent to the second electrode 310B. .

Through this, the second electrode 310B may be stably disposed between the first electrode set 310A and the third electrode set 320A, and the first active layer 310C and the second active layer 320C are first It is possible to implement a stable arrangement while mutually supporting the second electrode 310B between the electrode set 310A and the third electrode set 320A.

The second variable low resistance region VL24A corresponds to the boundary of the polarization region formed in the second active layer 320C by applying an electric field to the second active layer 320C through the third electrode set 320A, A region having an electrical resistance lower than that of the region may be included.

26 and 28 exemplarily show that the second variable low resistance region VL24A is formed by applying a voltage to the third electrode 324A of the third electrode set 320A.

The present invention is not limited thereto, and each of the plurality of third electrodes 321A, 322A, 323A, 324A through individual control of the plurality of third electrodes 321A, 322A, 323A, 324A of the third electrode set 320A A second fluctuation low resistance region corresponding to may be selectively formed.

The second variable low resistance region VL24A may contact the second electrode 310B. Through this, a current flow may be formed between each of the plurality of third electrodes 321A, 322A, 323A, and 324A and the second electrode 310B.

Through this, various functions of the electronic device 300 may be implemented.

Details of the second low fluctuation resistance region VL24A can be sufficiently understood through the configuration of the low fluctuation resistance region in the above-described embodiments, and a more detailed description thereof will be omitted.

The electronic device of the present embodiment may individually control a plurality of first electrodes of the first electrode set to form variable low resistance regions in the active layer, respectively, and for example, a plurality of spaced apart from each other so as to correspond to the plurality of first electrodes. A first fluctuation low resistance region may be formed.

In addition, the electronic device of the present embodiment may individually control a plurality of third electrodes of the third electrode set to form variable low resistance regions in the active layer, respectively. For example, a plurality of spaced apart from each other to correspond to a plurality of third electrodes. The second fluctuation low resistance region of may be formed.

The first variable low-resistance region may contact the second electrode, and through this, a current may flow between the plurality of first electrodes and the second electrode.

In addition, the second fluctuation low-resistance region may contact the second electrode, and through this, a current may flow between the plurality of third electrodes and the second electrode.

As a result, current may flow between the first electrode set and the third electrode set.

It is possible to input and output various data through individual signal control of the plurality of first electrodes of the first electrode set and the flow of current and recognition thereof. In addition, by individually controlling a plurality of second electrodes of the first electrode set and the third electrode set disposed to face each other in the thickness direction, the flow of current between the first electrode set and the third electrode set may be controlled in various forms. .

Through this, an electronic device having various uses and various characteristics can be implemented, and for example, a memory having a high degree of integration can be implemented.

29 and 30 are diagrams illustrating a modified example of the electronic device of FIG. 26.

Referring to FIG. 29, the electronic device 300 ′ of the present exemplary embodiment includes a first electrode set 310A, a second electrode 310B', a first active layer 310C, a first variable low resistance region VL14A, and a third. An electrode set 320A, a second active layer 320C, and a second variable low resistance region 320C may be included.

Among the configurations of the electronic device 300 ′ of the present embodiment, members having the same reference numerals as those of the members of the electronic device 300 of the above-described embodiment are within the same or similar range as described for the electronic device 300 described above. Since modifications are possible, detailed descriptions are omitted.

The second electrode 310B' according to the present exemplary embodiment may have a shape without a protrusion, for example, a shape corresponding to the body portion as a whole.

As another example, referring to FIG. 30, the electronic device 300 ″ of the present exemplary embodiment includes a first electrode set 310A″, a second electrode 310B″, a first active layer 310C, and a first variable low resistance region VL14A. ), a third electrode set 320A", a second active layer 320C, and a second variable low resistance region 320C.

Among the configurations of the electronic device 300" of the present embodiment, members having the same reference numerals as those of the members of the electronic device 300 of the above-described embodiment are within the same or similar range as described for the electronic device 300 described above. Since modifications are possible, detailed descriptions are omitted.

The first electrode set 310A" of the present embodiment may include a plurality of first electrodes 311A", 312A", 313A", 314A"), and at least one of them does not have a protrusion, eg For example, it may have a shape corresponding to the body part as a whole.

In addition, accordingly, the first variable low-resistance region VL14A may be formed in a region in contact with or outside the edges of the plurality of first electrodes 311A", 312A", 313A", and 314A".

In addition, as an optional embodiment, the third electrode set 320A" of this embodiment may include a plurality of third electrodes 321A", 322A", 323A", and 324A", each of which at least one has a protrusion. It may have a shape that does not correspond to the body part as a whole, for example.

In addition, accordingly, the second variable low-resistance region VL24A may be formed in a region in contact with or outside the edges of the plurality of third electrodes 321A", 322A", 323A", and 324A".

31 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.

The electronic device 400 of the present embodiment includes a first electrode set 410A, a second electrode 410B, a first active layer 410C, a first variable low resistance region VL14A, a third electrode set 420A, and 2 active layer 420C, a second variable low resistance region VL24A, a fourth electrode 420B, a third active layer 430C, a fifth electrode set 430A, and a third variable low resistance region VL34A. I can.

For convenience of explanation, the description will focus on differences from the above-described embodiment.

The first electrode set 410A may have a plurality of first electrodes 411A, 412A, 413A, and 414A disposed to be spaced apart from each other. Although four first electrodes are shown in FIG. 31, the present invention is not limited thereto and may include a variety of first electrodes.

The first electrode set 410A is the same as the first electrode set 310A of the above-described embodiment or within a range that can be partially modified as necessary. For convenience of description, the first electrode set 410A is more specific. Description is omitted.

The second electrode 410B may be disposed to be spaced apart from the plurality of first electrodes 411A, 412A, 413A, and 414A.

In addition, the second electrode 410B may be formed to include a region overlapping the plurality of first electrodes 411A, 412A, 413A, and 414A.

The second electrode 410B may have a length extending along the second direction.

The second electrode 410B is the same as the second electrode 310B of the above-described embodiment or within a range that can be partially modified as necessary, and a more detailed description of the second electrode 410B is omitted for convenience of description. do.

The first active layer 410C is formed between the first electrode set 410A and the second electrode 410B, and may include a spontaneous polarization material.

The first active layer 410C may be formed using the same material as the active layer of the above-described embodiments.

The first active layer 410C is the same as the first active layer 310C of the above-described embodiment or within a range that can be partially modified as necessary, and a more detailed description of the first active layer 410C is omitted for convenience of description. do.

The first variable low resistance region VL14A corresponds to the boundary of the polarization region fa1 formed in the first active layer 410C by applying an electric field to the first active layer 410C through the first electrode set 410A. And a region having lower electrical resistance than other adjacent regions.

The first fluctuating low-resistance region VL14A is the same as the first fluctuating low-resistance region VL14A of the above-described embodiment, or within a range that can be partially deformed as needed. A more detailed description of VL14A) will be omitted.

The third electrode set 420A is a plurality of third electrodes 421A, 422A, 423A, 424A that are spaced apart from the second electrode 410B and have a region overlapping with the second electrode 410B and are disposed to be spaced apart from each other. Can have

Although four third electrodes are shown in FIG. 31, the present invention is not limited thereto and may include a variety of third electrodes.

The third electrode set 420A is the same as the third electrode set 320A of the above-described embodiment, or within a range that can be partially modified as necessary. For convenience of description, the third electrode set 420A is more specific. Description is omitted.

The second active layer 420C may include a first region 420c1 and a second region 420c2. The second active layer 420C may include a spontaneous polarization material. For example, the second active layer 420C and the second active layer 420C may be formed of the same material as the active layer of the above-described embodiments.

The first region 420c1 of the second active layer 420C may be formed between the second electrode 410B and the third electrode set 420A.

The second region 420c2 of the second active layer 420C may be formed between the third electrode set 420A and the fourth electrode 420B.

As shown in the drawing, the first region 420c1 and the second region 420c2 of the second active layer 420C may be formed to be connected. For example, the second active layer 420C may be integrally formed.

In addition, as another example, the first region 420c1 and the second region 420c2 of the second active layer 420C may be formed of different layers, and may be formed to be spaced apart without being connected to each other as an alternative embodiment.

The second variable low resistance region VL24A may include a first region VL24AU and a second region VL24AD.

The second active layer by applying an electric field to the first region 420C1 of the second active layer 420C through the third electrode set 420A to the first region VL24AU of the second variable low resistance region VL24A. A region corresponding to the boundary of the polarization region formed in the first region 420C1 of 420C and having an electrical resistance lower than that of other adjacent regions may be included.

The second region VL24AD of the second variable low resistance region VL24A applies an electric field to the second region 420C2 of the second active layer 420C through the third electrode set 420A to form the second active layer. A region corresponding to the boundary of the polarization region formed in the second region 420C2 of 420C and having an electrical resistance lower than that of other adjacent regions may be included.

Through this, it is possible to easily form the first region VL24AU and the second region VL24AD of the second variable low resistance region VL24A corresponding to the third electrode set 420A, for example, The first region VL24AU and the second region VL24AD of the resistance region VL24A may be simultaneously formed.

The fourth electrode 420B may be disposed to be spaced apart from the plurality of third electrodes 421A, 422A, 423A, and 424A of the third electrode set 420A.

Further, the fourth electrode 420B may be formed to include a region overlapping the plurality of third electrodes 421A, 422A, 423A, and 424A.

The fourth electrode 420B may have a length extending along the second direction.

The fourth electrode 420B may be formed of the same material or a similar material as the second electrode 410B.

Also, since the fourth electrode 420B may have the same configuration as the second electrode 410B and may be partially deformed within a deformable range, a more detailed description of the fourth electrode 420B will be omitted.

As an optional embodiment, a fifth electrode set 430A may be further disposed.

The fifth electrode set 430A includes a plurality of fifth electrodes 431A, 432A, 433A, 434A that are spaced apart from the fourth electrode 420B and have a region overlapping with the fourth electrode 420B and are disposed to be spaced apart from each other. Can have.

Although four fifth electrodes are shown in FIG. 31, the present invention is not limited thereto and may include a variety of fifth electrodes.

The fifth electrode set 430A is the same as the third electrode set 420A or within a range that can be partially modified as necessary, and a more detailed description of the fifth electrode set 430A will be omitted for convenience of description. .

The third active layer 430C is formed between the fifth electrode set 430A and the fourth electrode 420B and may include a spontaneous polarization material.

The third active layer 430C may be formed using the same material as the active layer of the above-described embodiments.

The third active layer 430C is the same as the first active layer 410C or within a range that can be partially deformed as necessary, and a more detailed description of the third active layer 430C will be omitted for convenience of description.

The third variable low resistance region VL34A corresponds to the boundary of the polarization region formed in the third active layer 430C by applying an electric field to the third active layer 430C through the fifth electrode set 430A and is adjacent to another region. A region having lower electrical resistance may be included.

The description of the third low variable resistance region VL34A is the same as the above-described embodiments or the first variable low resistance region VL14A, or within a range that can be partially modified as necessary. A more detailed description of the fluctuation low resistance region VL34A will be omitted.

The electronic device of the present embodiment may individually control a plurality of first electrodes of the first electrode set to form variable low resistance regions in the active layer, respectively, and for example, a plurality of spaced apart from each other so as to correspond to the plurality of first electrodes. A first fluctuation low resistance region may be formed.

In addition, the electronic device of the present embodiment may individually control a plurality of third electrodes of the third electrode set to form variable low resistance regions in the active layer, respectively. For example, a plurality of spaced apart from each other to correspond to a plurality of third electrodes. The second fluctuation low resistance region of may be formed.

In addition, at this time, when forming a second variable low resistance region in the active layer by individually controlling a plurality of third electrodes of the third electrode set, a second variable low resistance region in one direction and a different direction of the third electrode set, respectively. A first region and a second region of may be formed.

For example, by applying a voltage to the active layer through one third electrode, the first region of the second fluctuating low-resistance region in one direction of one third electrode and the second fluctuation low-resistance region in the other direction. Areas can be formed.

Through this, a variable low-resistance region may be formed on each side of one third electrode facing each other.

The first variable low-resistance region may contact the second electrode, and through this, a current may flow between the plurality of first electrodes and the second electrode.

In addition, the first region of the second fluctuation low resistance region may contact the second electrode, and through this, a current may flow between the plurality of third electrodes and the second electrode.

In addition, the second region of the second fluctuation low resistance region may contact the fourth electrode, and through this, a current may flow between the plurality of third and fourth electrodes.

In addition, as an optional embodiment, a fifth electrode set having a plurality of fifth electrodes may be further included.

Through this, the third variable low-resistance region may contact the fourth electrode, and a current may flow between the plurality of fifth and fourth electrodes.

As a result, a current flow may occur between the first electrode set and the third electrode set, and a current flow may occur between the third electrode set and the fifth electrode set. 5 Current flow may occur between sets of electrodes.

It is possible to input and output various data through individual signal control of a plurality of electrodes of the first, third, and fifth electrode sets and the flow of current and recognition thereof.

In addition, the flow of current between the first electrode set and the third electrode set and the flow of current between the third electrode set and the fifth electrode set may be controlled in various forms.

Through this, an electronic device having various uses and various characteristics can be implemented, and for example, a memory having a high degree of integration can be implemented.

32 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.

The electronic device 500 of the present embodiment includes a first electrode set 510A, a second electrode 510B, a first active layer 510C, a first variable low resistance region VL14A, a third electrode set 520A, and 2 active layer 520C, second variable low resistance region VL24A, fourth electrode 520B, third active layer 530C, fifth electrode set 530A, third variable low resistance region VL34A, sixth An electrode 530B, a fourth active layer 540C, a seventh electrode set 540A, and a fourth variable low resistance region VL44A may be included.

For convenience of explanation, the description will focus on differences from the above-described embodiment.

The first electrode set 510A may have a plurality of first electrodes 511A, 512A, 513A, and 514A disposed to be spaced apart from each other. Although four first electrodes are shown in FIG. 32, the present invention is not limited thereto and may include a variety of first electrodes.

The first electrode set 510A is the same as the first electrode set 310A of the above-described embodiment or within a range that can be partially modified as necessary. For convenience of description, the first electrode set 510A is more specific. Description is omitted.

The second electrode 510B may be disposed to be spaced apart from the plurality of first electrodes 511A, 512A, 513A, and 514A.

Also, the second electrode 510B may be formed to include a region overlapping the plurality of first electrodes 511A, 512A, 513A, and 514A.

The second electrode 510B may have a length extending along the second direction.

The second electrode 510B is the same as the second electrode 310B of the above-described embodiment or within a range that can be partially modified as necessary, and a more detailed description of the second electrode 510B is omitted for convenience of description. do.

The first active layer 510C may be formed between the first electrode set 510A and the second electrode 510B and may include a spontaneous polarization material.

The first active layer 510C may be formed using the same material as the active layer of the above-described embodiments.

The first active layer 510C is the same as the first active layer 310C of the above-described embodiment, or within a range that can be partially modified as necessary, and a more detailed description of the first active layer 510C is omitted for convenience of description. do.

The first variable low resistance region VL14A corresponds to the boundary of the polarization region fa1 formed in the first active layer 510C by applying an electric field to the first active layer 510C through the first electrode set 510A. And a region having lower electrical resistance than other adjacent regions.

The first fluctuating low-resistance region VL14A is the same as the first fluctuating low-resistance region VL14A of the above-described embodiment, or within a range that can be partially deformed as needed. A more detailed description of VL14A) will be omitted.

The third electrode set 520A is a plurality of third electrodes 521A, 522A, 523A, 524A that are spaced apart from the second electrode 510B and have a region overlapping with the second electrode 510B and are disposed to be spaced apart from each other. Can have

Although four third electrodes are shown in FIG. 32, the present invention is not limited thereto and may include a variety of third electrodes.

The third electrode set 520A is the same as the third electrode set 320A of the above-described embodiment or within a range that can be partially modified as necessary. For convenience of description, the third electrode set 520A is more specific. Description is omitted.

The second active layer 520C may include a first region 520c1 and a second region 520c2. The second active layer 520C may include a self-polarizing material. For example, the second active layer 520C may be formed using the same material as the active layer of the above-described embodiments.

The first region 520c1 of the second active layer 520C may be formed between the second electrode 510B and the third electrode set 520A.

The second region 520c2 of the second active layer 520C may be formed between the third electrode set 520A and the fourth electrode 520B.

As shown in the drawing, the first region 520c1 and the second region 520c2 of the second active layer 520C may be formed to be connected. For example, the second active layer 520C may be integrally formed.

In addition, as another example, the first region 520c1 and the second region 520c2 of the second active layer 520C may be formed of different layers, and may be formed to be spaced apart without being connected to each other as an alternative embodiment.

The second variable low resistance region VL24A may include a first region VL24AU and a second region VL24AD.

The first region VL24AU of the second variable low resistance region VL24A applies an electric field to the first region 520C1 of the second active layer 520C through the third electrode set 520A to form the second active layer. A region corresponding to the boundary of the polarization region formed in the first region 520C1 of 520C and having an electrical resistance lower than that of other adjacent regions may be included.

The second region VL24AD of the second variable low resistance region VL24A applies an electric field to the second region 520C2 of the second active layer 520C through the third electrode set 520A to form the second active layer. A region corresponding to the boundary of the polarization region formed in the second region 520C2 of 520C and having an electrical resistance lower than that of other adjacent regions may be included.

Through this, the first region (VL24AU) and the second region (VL24AD) of the second variable low resistance region VL24A corresponding to the third electrode set 520A can be easily formed. The first region VL24AU and the second region VL24AD of the resistance region VL24A may be simultaneously formed.

The fourth electrode 520B may be disposed to be spaced apart from the plurality of third electrodes 521A, 522A, 523A, and 524A of the third electrode set 520A.

Further, the fourth electrode 520B may be formed to include a region overlapping the plurality of third electrodes 521A, 522A, 523A, and 524A.

The fourth electrode 520B may have a length extending along the second direction.

The fourth electrode 520B may be formed of the same material or a similar material as the second electrode 510B.

Further, since the fourth electrode 520B may have the same configuration as the second electrode 510B and may be partially deformed within a deformable range, a more detailed description of the fourth electrode 520B will be omitted.

The fifth electrode set 530A includes a plurality of fifth electrodes 531A, 532A, 533A, and 534A that are spaced apart from the fourth electrode 520B and overlapped with the fourth electrode 520B and are disposed to be spaced apart from each other. Can have.

Although four fifth electrodes are shown in FIG. 32, the present invention is not limited thereto and may include a variety of fifth electrodes.

The fifth electrode set 530A is the same as the third electrode set 520A or within a range that can be partially modified as necessary, and a more detailed description of the fifth electrode set 530A will be omitted for convenience of description. .

The third active layer 530C may include a first region 530c1 and a second region 530c2. The third active layer 530C may include a self-polarizing material. For example, the third active layer 530C may be formed using the same material as the active layer of the above-described embodiments.

The first region 530c1 of the third active layer 530C may be formed between the fourth electrode 520B and the fifth electrode set 530A.

The second region 530c2 of the third active layer 530C may be formed between the fifth electrode set 530A and the sixth electrode 530B.

As shown in the drawing, the first region 530c1 and the second region 530c2 of the third active layer 530C may be formed to be connected. For example, the third active layer 530C may be integrally formed.

In addition, as another example, the first region 530c1 and the second region 530c2 of the third active layer 530C may be formed of different layers, and may be formed to be spaced apart without being connected to each other as an alternative embodiment.

The third low variable resistance region VL34A may include a first region VL34AU and a second region VL34AD.

The third active layer by applying an electric field to the first region 530C1 of the third active layer 530C through the fifth electrode set 530A to the first region VL34AU of the third variable low resistance region VL34A. A region corresponding to the boundary of the polarization region formed in the first region 530C1 of 530C and having an electrical resistance lower than that of other adjacent regions may be included.

The second region VL34AD of the third variable low resistance region VL34A applies an electric field to the second region 530C2 of the third active layer 530C through the fifth electrode set 530A to form the third active layer. A region corresponding to the boundary of the polarization region formed in the second region 530C2 of 530C and having an electrical resistance lower than that of other adjacent regions may be included.

Through this, the first region VL34AU and the second region VL34AD of the third low-variable resistance region VL34A corresponding to the fifth electrode set 530A can be easily formed. For example, the third low-resistance region VL34AD can be formed. The first region VL34AU and the second region VL34AD of the resistance region VL34A may be simultaneously formed.

The sixth electrode 530B may be disposed to be spaced apart from the plurality of fifth electrodes 531A, 532A, 533A, and 534A of the fifth electrode set 530A.

Also, the sixth electrode 530B may be formed to include a region overlapping the plurality of fifth electrodes 531A, 532A, 533A, and 534A.

The sixth electrode 530B may have a length extending along the second direction.

The sixth electrode 530B may be formed of the same material or a similar material as the fourth electrode 520B or the second electrode 510B.

In addition, the sixth electrode 530B may have the same configuration as the fourth electrode 520B or the second electrode 510B, and may be partially deformed within a deformable range. Detailed description will be omitted.

As an optional embodiment, a seventh electrode set 540A may be further disposed.

The seventh electrode set 540A includes a plurality of seventh electrodes 531A, 532A, 533A, and 534A that are spaced apart from the sixth electrode 530B and have a region overlapping the sixth electrode 530B and are spaced apart from each other. Can have.

Although four seventh electrodes are shown in FIG. 32, the present invention is not limited thereto and may include a variety of seventh electrodes.

The seventh electrode set 540A is the same as the first electrode set 510A, the third electrode set 520A, or the fifth electrode set 530A, or within a range that can be partially modified as necessary, for convenience of description. For this purpose, a more detailed description of the seventh electrode set 540A will be omitted.

The fourth active layer 540C is formed between the seventh electrode set 540A and the sixth electrode 530B, and may include a spontaneous polarization material.

The fourth active layer 540C may be formed using the same material as the active layer of the above-described embodiments.

The fourth active layer 540C is the same as the first active layer 510C or within a range that can be partially deformed as necessary, and a more detailed description of the fourth active layer 540C will be omitted for convenience of description.

The fourth variable low-resistance region VL44A corresponds to the boundary of the polarization region formed on the fourth active layer 540C by applying an electric field to the fourth active layer 540C through the seventh electrode set 540A and is adjacent to another region. It may include a region having a lower electrical resistance.

The description of the fourth low variable resistance region VL44A is the same as the above-described embodiments or the first variable low resistance region VL14A, or within a range that can be partially modified as necessary. A more detailed description of the variable low resistance region VL44A will be omitted.

The electronic device of the present embodiment may individually control a plurality of first electrodes of the first electrode set to form variable low resistance regions in the active layer, respectively, and for example, a plurality of spaced apart from each other so as to correspond to the plurality of first electrodes. A first fluctuation low resistance region may be formed.

In addition, the electronic device of the present embodiment may individually control a plurality of third electrodes of the third electrode set to form variable low resistance regions in the active layer, respectively. For example, a plurality of spaced apart from each other to correspond to a plurality of third electrodes. The second fluctuation low resistance region of may be formed.

In addition, at this time, when forming a second variable low resistance region in the active layer by individually controlling a plurality of third electrodes of the third electrode set, a second variable low resistance region in one direction and a different direction of the third electrode set, respectively. A first region and a second region of may be formed.

For example, by applying a voltage to the active layer through one third electrode, the first region of the second fluctuating low-resistance region in one direction of one third electrode and the second fluctuation low-resistance region in the other direction. Areas can be formed.

Through this, a variable low-resistance region may be formed on each side of one third electrode facing each other.

The first variable low-resistance region may contact the second electrode, and through this, a current may flow between the plurality of first electrodes and the second electrode.

In addition, the first region of the second fluctuation low resistance region may contact the second electrode, and through this, a current may flow between the plurality of third electrodes and the second electrode.

In addition, the second region of the second fluctuation low resistance region may contact the fourth electrode, and through this, a current may flow between the plurality of third and fourth electrodes.

In addition, as an optional embodiment, a fifth electrode set having a plurality of fifth electrodes may be further included.

Through this, the third variable low-resistance region may contact the fourth electrode, and a current may flow between the plurality of fifth and fourth electrodes.

In addition, as an optional embodiment, a seventh electrode set having a plurality of seventh electrodes may be further included.

Through this, the fourth variable low-resistance region may contact the sixth electrode, and through this, a current may flow between the plurality of seventh and sixth electrodes.

Through this, an electronic device having various uses and various characteristics can be implemented, and for example, a memory having a high degree of integration can be implemented.

Although not shown, the present invention can variously implement a variety of electrode sets, electrodes and active layers adjacent thereto, and for example, the number of stacked electrodes can be determined in various ways as necessary, through which electrons having a desired structure and electrical characteristics The device can be accurately and easily implemented.

As described above, the current value varies in each case, and various information can be stored accordingly.

As described above, the present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those of ordinary skill in the art will understand that various modifications and equivalent other embodiments are possible therefrom. . Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

The specific implementations described in the embodiments are examples, and do not limit the scope of the embodiments in any way. In addition, if there is no specific mention such as "essential", "important", etc., it may not be an essential component for the application of the present invention.

In the specification of the embodiment (especially in the claims), the use of the term "above" and the similar reference term may correspond to both the singular and the plural. In addition, when a range is described in an embodiment, the invention to which individual values falling within the range are applied (unless otherwise stated), it is the same as describing each individual value constituting the range in the detailed description. . Finally, if there is no clearly stated or contrary to the order of steps constituting the method according to the embodiment, the steps may be performed in an appropriate order. The embodiments are not necessarily limited according to the order of description of the steps. The use of all examples or illustrative terms (for example, etc.) in the embodiments is merely for describing the embodiments in detail, and the scope of the embodiments is limited by the above examples or illustrative terms unless limited by the claims. It is not. In addition, those skilled in the art can recognize that various modifications, combinations, and changes may be configured according to design conditions and factors within the scope of the appended claims or their equivalents.

100, 200, 300, 400, 500: electronic device
110, 230, 310C: active layer
120: applied electrode
VL, VL1, VL2, VL14A: fluctuation low resistance area
310A: first electrode set
310B: second electrode
320A: third electrode set

Claims (8)

A first electrode set having a plurality of first electrodes disposed to be spaced apart from each other;
A second electrode spaced apart from the plurality of first electrodes and formed to include a region overlapping the plurality of first electrodes;
A first active layer formed between the first electrode set and the second electrode and comprising a spontaneously polarizable material;
At least one first fluctuating low-resistance region that corresponds to a boundary of a polarization region formed in the first active layer by applying an electric field to the first active layer through the first electrode set and has a lower electrical resistance than other adjacent regions;
A third electrode set spaced apart from the second electrode and having a plurality of third electrodes disposed to be spaced apart from each other and having a region overlapping the second electrode;
A second active layer formed between the second electrode and the third electrode set and comprising a spontaneously polarizable material; And
By applying an electric field to the second active layer through the third electrode set, at least one second fluctuating low-resistance region, which corresponds to a boundary of a polarization region formed in the second active layer and has a lower electrical resistance than other adjacent regions, is formed. An electronic device based on a fluctuating low resistance region comprising. The method of claim 1,
At least one of the plurality of first electrodes of the first electrode set is formed to be electrically connected to at least one of the plurality of second third electrodes of the second third electrode set. The method of claim 1,
The first variable low resistance region is formed to be in contact with the second electrode. The method of claim 1,
The second variable low resistance region is formed to contact the second electrode. A first electrode set having a plurality of first electrodes disposed to be spaced apart from each other, a second electrode formed to include a region spaced apart from the plurality of first electrodes and overlapping the plurality of first electrodes, the first electrode set, and A first active layer formed between the second electrodes and including a spontaneous polarization material, a plurality of third electrodes spaced apart from the second electrode and having a region overlapping the second electrode and disposed to be spaced apart from each other With respect to a variable low-resistance region-based electronic device comprising a three electrode set and a second active layer formed between the second electrode and the third electrode set and comprising a spontaneous polarization material,
Forming a polarization region of the active layer by applying an electric field to the first active layer through the first electrode set; And
Forming a step of forming a first variable low-resistance region including a region having a lower electrical resistance than other adjacent regions in correspondence with the boundary of the polarization region, and the first electrode set and the first electrode set through the first variance low-resistance region. A method of controlling an electronic device based on a variable low resistance region comprising the step of forming a current flow between two electrodes. The method of claim 5,
Forming a polarization region of the active layer by applying an electric field to the second active layer through the third electrode set; And
Forming a step of forming a second variable low-resistance region including a region having a lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region, and the third electrode set and the third electrode through the second low-variable resistance region. A method of controlling an electronic device based on a variable low resistance region comprising the step of forming a current flow between two electrodes. The method of claim 5,
The first variable low-resistance region is formed to be in contact with the second electrode. The method of claim 5,
The second variable low resistance region is formed to contact the second electrode.

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