KR102642566B1 - Variable low resistance area based electronic device and controlling thereof - Google Patents

Abstract

One embodiment of the present invention includes a first electrode set having a plurality of first electrodes spaced apart from each other, a plurality of electrodes spaced apart from the plurality of first electrodes and formed to include an area overlapping with the plurality of first electrodes. A second electrode set having two electrodes, a first active layer formed between the first electrode set and the second electrode set and comprising a spontaneously polarizable material, through the first electrode set or the second electrode set. At least one first variable low-resistance region, which corresponds to the boundary of a polarization region formed in the first active layer by applying an electric field to the first active layer and includes a region with lower electrical resistance than other adjacent regions, is spaced apart from the second electrode set; A third electrode set having an area overlapping with the plurality of second electrodes and a plurality of third electrodes arranged to be spaced apart from each other, formed between the second electrode set and the third electrode set and comprising a spontaneously polarizable material. A region corresponding to the boundary of the polarization region formed in the second active layer by applying an electric field to the second active layer through the second active layer and the third electrode set or the second electrode set and having lower electrical resistance than other adjacent regions. Disclosed is an electronic device based on a variable low-resistance region including one or more second variable low-resistance regions including.

Description

{Variable low resistance area based electronic device and controlling the same}

The present invention relates to an electronic device using a variable low-resistance region and a method of controlling the same.

As technology advances and people's interest in convenience in life increases, attempts to develop various electronic products are becoming more active.

Additionally, these electronic products are becoming increasingly smaller and more integrated, and the locations in which they are used are increasing widely.

These electronic products include various electrical devices, such as CPUs, memory, and various other electrical devices. These devices may include various types of electrical circuits.

For example, electrical devices are used in products in a variety of fields, including not only computers and smartphones, but also home sensor devices for IoT and bioelectronic devices for ergonomics.

Meanwhile, with the recent pace of technological development and rapid improvement in users' living standards, the use and application areas of these electric devices are rapidly increasing, and the demand for them is also increasing accordingly.

According to this trend, there are limitations in implementing and controlling electronic circuits that can be easily and quickly applied to various commonly used electrical devices.

Meanwhile, memory elements, especially non-volatile memory elements, are widely used as information storage and/or processing devices in various electronic devices such as computers, cameras, and communication devices.

These memory devices are being developed a lot, especially in terms of lifespan and speed. Most of the challenges are securing memory lifespan and speed, but there are limits to implementing improved memory devices.

The present invention can provide an electronic device based on a variable low-resistance region that has improved electrical characteristics and can be easily applied to various applications, and a method of controlling the same.

One embodiment of the present invention includes a first electrode set having a plurality of first electrodes spaced apart from each other, a plurality of electrodes spaced apart from the plurality of first electrodes and formed to include an area overlapping with the plurality of first electrodes. A second electrode set having two electrodes, a first active layer formed between the first electrode set and the second electrode set and comprising a spontaneously polarizable material, through the first electrode set or the second electrode set. At least one first variable low-resistance region, which corresponds to the boundary of a polarization region formed in the first active layer by applying an electric field to the first active layer and includes a region with lower electrical resistance than other adjacent regions, is spaced apart from the second electrode set; A third electrode set having an area overlapping with the plurality of second electrodes and a plurality of third electrodes arranged to be spaced apart from each other, formed between the second electrode set and the third electrode set and comprising a spontaneously polarizable material. A region corresponding to the boundary of the polarization region formed in the second active layer by applying an electric field to the second active layer through the second active layer and the third electrode set or the second electrode set and having lower electrical resistance than other adjacent regions. Disclosed is an electronic device based on a variable low-resistance region including one or more second variable low-resistance regions including.

In this embodiment, at least one of the plurality of first electrodes of the first electrode set is connected to the plurality of third electrodes of the third electrode set through the first variable low-resistance region and the second variable low-resistance region. It may be formed to be electrically connected to at least one of the.

In this embodiment, the first variable low-resistance region may include a region formed to contact the second electrode.

In this embodiment, the second variable low-resistance region may include one formed to contact the second electrode.

In this embodiment, the first variable low-resistance region is formed to correspond to at least one of a plurality of regions where the plurality of first electrodes of the first electrode set and the plurality of second electrodes of the second electrode set overlap each other. It may include becoming.

Another embodiment of the present invention includes a first electrode set having a plurality of first electrodes arranged to be spaced apart from each other, spaced apart from the plurality of first electrodes, spaced apart from the plurality of first electrodes, and overlapping with the plurality of first electrodes. a second electrode set having a plurality of second electrodes formed to include a region, a first active layer formed between the first electrode set and the second electrode set and including a spontaneously polarizable material, the second electrode set a third electrode set having a plurality of third electrodes spaced apart from each other and having an area overlapping with the second electrode, and a spontaneously polarizable material formed between the second electrode set and the third electrode set. For an electronic device based on a variable low-resistance region including a second active layer, forming a polarization region of the active layer by applying an electric field to the first active layer through the first electrode set or the second electrode set. and forming a first variable low-resistance region including a region with lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region, thereby forming one of the plurality of first electrodes through the first variable low-resistance region. Disclosed is a method for controlling an electronic device based on a variable low-resistance region, including forming a current flow between at least one of the plurality of second electrodes.

In this embodiment, forming a polarization region of the active layer by applying an electric field to the second active layer through the third electrode set or the second electrode set, and forming a polarization region of the active layer, are more electrically active than other adjacent regions corresponding to the boundary of the polarization region. forming a second variable low-resistance region including a low-resistance region, thereby forming a current between at least one of the plurality of second electrodes and at least one of the plurality of third electrodes through the second variable low-resistance region. A method of controlling an electronic device based on a variable low-resistance region including the step of forming a flow of . Discloses an electronic device based on a variable low-resistance region including one or more second variable low-resistance regions.

Other aspects, features and advantages in addition to those described above will become apparent from the following drawings, claims and detailed description of the invention.

The electronic device and its control method using a variable low-resistance region according to the present invention can be easily applied to a variety of purposes, and can implement an electronic device with improved electrical characteristics and an electronic device capable of precise control.

1 is a schematic plan view of an exemplary structure shown to explain an electronic device according to an embodiment of the present invention.
Figure 2 is a cross-sectional view taken along line II-II of Figure 1.
Figure 3 is an enlarged view of K in Figure 2.
FIGS. 4A to 4C are diagrams for explaining a control method of the structure of FIG. 1.
5 is a schematic plan view of another exemplary structure shown to explain an electronic device according to an embodiment of the present invention.
Figure 6 is a cross-sectional view taken along line VI-VI of Figure 5.
FIGS. 7A to 7D are diagrams for explaining a control method of the structure of FIG. 5.
Figure 8 is a schematic plan view of another exemplary structure shown to explain an electronic device according to an embodiment of the present invention.
Figure 9 is a cross-sectional view taken along line II-II of Figure 8.
Figures 10 to 14 are diagrams for explaining the operation of the structure of Figure 8.
15 and 16 are cross-sectional views of another exemplary structure shown to explain an electronic device according to an embodiment of the present invention.
Figure 17 is a cross-sectional view schematically showing another example of the structure of Figure 15.
FIG. 18 is a cross-sectional view schematically showing another example of the structure of FIG. 15.
FIG. 19 is a cross-sectional view schematically showing another example of the structure of FIG. 15.
FIG. 20 is a cross-sectional view schematically showing an example of section II' of FIG. 15.
FIG. 21 is a cross-sectional view schematically showing another example of section II' of FIG. 15.
FIG. 22 is a cross-sectional view schematically showing another example of section II' of FIG. 15.
FIG. 23 is a cross-sectional view schematically showing another example of section II' of FIG. 15.
FIG. 24 is a cross-sectional view schematically showing another example of section II' of FIG. 15.
FIG. 25 is a cross-sectional view schematically showing another example of section II' of FIG. 15.
Figure 26 is a schematic cross-sectional view showing an electronic device according to an embodiment of the present invention.
FIG. 27 is a schematic partial plan view seen from direction K of FIG. 26.
FIG. 28 is a cross-sectional view taken along line X-X of FIG. 26.
Figure 29 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.
Figure 30 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to embodiments of the present invention shown in the attached drawings.

Since the present invention can be modified in various ways and can have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, identical or corresponding components will be assigned the same reference numerals and redundant description thereof will be omitted. .

In the following embodiments, terms such as first and second are used not in a limiting sense but for the purpose of distinguishing one component from another component.

In the following examples, singular terms include plural terms unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have mean that the features or components described in the specification exist, and do not exclude in advance the possibility of adding one or more other features or components.

In the drawings, the sizes of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are shown arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is shown.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to the three axes in the Cartesian coordinate system, but can be interpreted in a broad sense including these. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may also refer to different directions that are not orthogonal to each other.

In cases where an embodiment can be implemented differently, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially at the same time, or may be performed in an order opposite to that in which they are described.

FIG. 1 is a schematic plan view of an exemplary structure shown to explain an electronic device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and FIG. 3 is a This is an enlarged view of K in 2.

Referring to FIGS. 1 and 2 , the electronic device 10 for explaining the electronic device of this embodiment may include an active layer 11, an applied electrode 12, and a variable low-resistance region (VL).

The active layer 11 may include a spontaneously polarizable material. For example, the active layer 11 includes an insulating material and may include a ferroelectric material. That is, the active layer 11 may include a material with a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional example, the active layer 11 may include a perovskite-based material, for example, BaTiO _3, SrTiO _3, BiFe3, PbTiO3, PbZrO3, and SrBi2Ta2O9.

Also, as another example, the active layer 11 has an ABX3 structure, where A may include an alkyl group of CnH2n+1 and one or more materials selected from inorganics such as Cs and Ru capable of forming a perovskite solar cell structure, and B may include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 11 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbCl _x Br _3-x (0≤x, y≤1) can do.

Since the active layer 11 can be formed using various other ferroelectric materials, descriptions of all examples thereof will be omitted. Additionally, when forming the active layer 11, the ferroelectric material may be doped with various other materials to include additional functions or improve electrical properties.

The active layer 11 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. Additionally, the active layer 11 can maintain its polarization state even when the applied electric field is removed.

The application electrode 12 may be formed to apply an electric field to the active layer 11, and for example, may apply a voltage to the active layer 11.

As an optional embodiment, the application electrode 12 may be formed to contact the top surface of the active layer 11.

Additionally, the application electrode 12 can be formed to apply voltages of various sizes to the active layer 11 and to control the time of voltage application.

As an alternative embodiment, the input electrode 12 may be a gate electrode.

For example, the application electrode 12 may be electrically connected to a power source (not shown) or a power control unit.

The applying electrode 12 may include various materials and may include materials with high electrical conductivity. For example, the application electrode 12 can be formed using various metals.

For example, the application electrode 12 can be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium or copper. Alternatively, it can be formed using alloys of these materials or nitrides of these materials.

Additionally, as an optional embodiment, the applying electrode 12 may include a laminate structure.

Although not shown, as an optional embodiment, one or more insulating layers may be further disposed between the applying electrode 12 and the active layer 11.

The variable low-resistance region (VL) is a region formed in the active layer 11 through which current can flow, and can also be formed as a linear current path around the application electrode 12, as shown in FIG. 1. there is.

Specifically, the variable low-resistance region (VL) is a region of the active layer 11 with lower electrical resistance than other regions adjacent to the variable low-resistance region (VL).

In addition, after forming the variable low-resistance region (VL) through the application electrode 12, even if the electric field through the application electrode 12 is removed, for example, even if the voltage is removed, the polarization state of the active layer 11 remains. Since this is maintained, the variable low-resistance region (VL) is maintained and a current path can be maintained.

Through this, various electronic circuits can be constructed.

The variable low-resistance region VL has a height HVL, and this height HVL may correspond to the overall thickness of the active layer 11.

The height (HVL) of this variable low-resistance region (VL) may be proportional to the intensity of the electric field, for example, the magnitude of the voltage, when the electric field is applied through the application electrode 12. At least the size of this electric field may be larger than the inherent coercive electric field of the active layer 11.

The variable low-resistance region (VL) is a region formed when voltage is applied to the active layer 11 through the applied electrode 12, and can vary, for example, create, disappear, or move through control of the applied electrode 12. .

The active layer 11 may include a first polarization region 11F having a first polarization direction, and a variable low-resistance region VL may be formed at the boundary of the first polarization region 11F.

In addition, it may include a second polarization region 11R having a second polarization direction adjacent to the first polarization region 11F, and the variable low-resistance region VL is located at the boundary of the second polarization region 11R. can be formed. The second direction may be at least a different direction from the first direction, for example, a direction opposite to the first direction.

For example, the variable low-resistance region VL may be formed between the first polarization region 11F and the second polarization region 11R. Through this, a first polarization region 11F having a polarization direction in a first direction (for example, a direction from bottom to top based on FIG. 2) centered on the variable low-resistance region VL and a polarization direction opposite to the first direction. The second polarization region 11R having a polarization direction (for example, a direction from top to bottom with respect to FIG. 2) may be arranged to be distinct.

The variable low-resistance region (VL) may have a width (WVL) in one direction, which may be proportional to the moving distance of the variable low-resistance region (VL).

Additionally, this width (WVL) may be the width of a region on a plane defined as the variable low-resistance region (VL), which can be said to correspond to the width of the first polarization region (11F).

Additionally, the variable low-resistance region VL may be formed to correspond to the entire side of the boundary line of the first polarization region 11F and may have a thickness TVL1 in a direction away from the side of the first polarization region 11F. there is.

As an alternative example, this thickness TVL1 may be between 0.1 and 0.3 nanometers.

FIGS. 4A to 4C are diagrams for explaining a control method of the structure of FIG. 1.

Referring to FIG. 4A, the active layer 11 may include a second polarization region 11R having a second polarization direction. As an optional embodiment, the polarization state of the active layer 11 as shown in FIG. 4A may be formed by applying an initializing electric field through the application electrode 12.

Then, referring to FIG. 4B, a first polarization region 11F is formed in the active layer 11. As a specific example, a first polarization region 11F may be formed in an area overlapping with the application electrode 12 to correspond to the width of the application electrode 12.

It is larger than the coercive electric field of the active layer 11 through the applied electrode 12, and is large enough to enable the height (HVL) of the first polarization region 11F to be formed to at least correspond to the entire thickness of the active layer 11. An electric field may be applied to the active layer 11.

By applying an electric field through the application electrode 12, the polarization direction of one region of the second polarization region 11R of the active layer 11 can be changed to change into the first polarization region 11F.

As an alternative embodiment, the growth rate of the first polarization region 11F in the height (HVL) direction may be very fast, for example, at a rate of 1 km/sec.

Then, if the electric field through the applied electrode 12 is continuously maintained, that is, over time, the first polarization region 11F moves in the horizontal direction H, that is, in the direction perpendicular to the height HVL, and increases in size. You can. That is, the area of the second polarization region 11R can be gradually converted into the first polarization region 11F.

As an alternative embodiment, the growth rate of the first polarization region 11F in the horizontal direction (H) may be very fast, for example, at a rate of 1 m/sec.

Through this, the size of the variable low-resistance region (VL) can be controlled. This size is, for example, the width of the variable low-resistance region (VL) and corresponds to the growth distance of the first polarization region (11F), so the growth speed and electric field It may be proportional to the holding time. For example, the growth distance may be proportional to the product of the growth speed and the electric field maintenance time.

Additionally, the growth speed of the first polarization region 11F may be proportional to the sum of the growth speed in the height (HVL) direction and the growth speed in the horizontal direction (H).

Therefore, the size of the variable low-resistance region (VL) can be adjusted as desired by controlling the electric field maintenance time.

Specifically, as shown in FIG. 4C, the first polarization region 11F spreads out and becomes large, and accordingly, the variable low-resistance region VL can also move in a direction away from the application electrode 12.

In this embodiment, an electric field is applied to the active layer through an applied electrode to form a first polarization region having a first polarization direction different from the second polarization direction in the active layer, and a first polarization region is formed at the boundary between the first polarization region and the second polarization region. A corresponding variable low-resistance region can be formed. This variable low-resistance area is a low-resistance area and can serve as a path for current, making it possible to easily form an electronic circuit.

In addition, in this embodiment, the height of the variable low-resistance region can be determined by controlling the size of the voltage through the applied electrode, for example, and specifically controlled to have a height corresponding to the entire thickness of the active layer. can do.

Additionally, the size, for example, width, of the variable low-resistance region can be determined by controlling the time for maintaining the electric field through the applied electrode. By controlling the size of this variable low-resistance area, the size of the path of current flow can be easily controlled.

In addition, even if the electric field through the applied electrode is removed, the polarization state of the polarization region is maintained, so the path of the current can be easily maintained. When the polarization region is expanded by continuously maintaining the electric field through the applied electrode, the fluctuation that has already been formed is reduced. In the resistance area, the resistance may be lowered so that no current flows.

Through this, the extinction of the current path can be controlled, and as a result, the flow of current can be easily controlled.

The structure of this embodiment can be used for a variety of purposes, for example, one or more electrodes can be connected to contact a variable low-resistance region.

5 is a schematic plan view of another exemplary structure shown to explain an electronic device according to an embodiment of the present invention.

Figure 6 is a cross-sectional view taken along line VI-VI of Figure 5.

5 and 6, the electronic device 20 for explaining the electronic device of this embodiment may include an active layer 21, an applied electrode 22, and variable low-resistance regions (VL1, VL2, and VL3). .

The active layer 21 may include a spontaneously polarizable material. For example, the active layer 21 includes an insulating material and may include a ferroelectric material. That is, the active layer 21 may include a material with a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional embodiment, the active layer 21 may include a perovskite-based material, and the detailed description is the same as the above-described embodiment and is therefore omitted.

The application electrode 22 may be formed to apply an electric field to the active layer 21, and for example, may apply a voltage to the active layer 21. Since the specific details are the same as the above-described embodiment, they are omitted.

The variable low-resistance regions (VL1, VL2, and VL3) may include a first variable low-resistance region (VL1), a second variable low-resistance region (VL2), and a third variable low-resistance region (VL3).

The first variable low-resistance area (VL1) may have a larger width than the second variable low-resistance area (VL2), and the second variable low-resistance area (VL2) may have a larger width than the third variable low-resistance area (VL3). there is. For example, the area surrounded by the first variable low-resistance area (VL1) has a larger width than the area surrounded by the second variable low-resistance area (VL2), and the area surrounded by the second variable low-resistance area (VL2) has a wider width than the area surrounded by the second variable low-resistance area (VL2). It can have a larger width than the area surrounded by the low-resistance area (VL3).

As an optional embodiment, the first variable low-resistance region (VL1) is disposed outside the second variable low-resistance region (VL2), and the second variable low-resistance region (VL2) is disposed outside the third variable low-resistance region (VL3). can be placed in

The first variable low-resistance region (VL1), the second variable low-resistance region (VL2), and the third variable low-resistance region (VL3) are regions formed in the active layer 21 and are regions through which current can flow, and the current has a linear shape. It can be formed as a path of .

Specifically, the first variable low-resistance region (VL1), the second variable low-resistance region (VL2), and the third variable low-resistance region (VL3) are the first variable low-resistance region (VL1) and the third variable low-resistance region (VL1) among the regions of the active layer 21. This is an area with lower electrical resistance than other areas adjacent to the 2 variable low-resistance area (VL2) and the third variable low-resistance area (VL3).

In addition, after forming the first variable low-resistance region (VL1), the second variable low-resistance region (VL2), and the third variable low-resistance region (VL3) through the applied electrode 22, Even if the electric field is removed, for example, the voltage is removed, the polarization state of the active layer 21 is maintained, so that the first variable low-resistance region (VL1), the second variable low-resistance region (VL2), and the third variable low-resistance region (VL3) is maintained and can maintain the state in which the current path is formed.

Through this, various electronic circuits can be constructed. For example, it may form at least a portion of a memory device capable of storing one or more data.

The variable low-resistance regions VL1, VL2, and VL3 have a height HVL, and this height HVL may correspond to the overall thickness of the active layer 21.

The active layer 21 may include first polarization regions 21F1 and 21F3 having a first polarization direction, and the variable low-resistance regions VL1, VL2, and VL3 are boundaries of the first polarization regions 21F1 and 21F3. can be formed in

In addition, it may include second polarization regions 21R1 and 21R2 having a second polarization direction adjacent to the first polarization regions 21F1 and 21F3, and the variable low-resistance region VL is formed in the second polarization region 21R1. , 21R2) can be formed at the border. The second direction may be at least a different direction from the first direction, for example, a direction opposite to the first direction.

For example, the first variable low-resistance region VL1 may be formed between the first polarization region 21F1 and the second polarization region 21R1.

Additionally, the second variable low-resistance region VL2 may be formed between the first polarization region 21F1 and the second polarization region 21R2.

Additionally, the third variable low-resistance region VL3 may be formed between the first polarization region 21F3 and the second polarization region 21R2.

FIGS. 7A to 7D are diagrams for explaining a control method of the structure of FIG. 5.

Referring to FIG. 7A, the active layer 21 may include a second polarization region 21R having a second polarization direction. As an optional embodiment, the polarization state of the active layer 21 as shown in FIG. 7A may be formed by applying an initializing electric field through the application electrode 22.

Then, referring to FIG. 7B, a first polarization region 21F is formed in the active layer 21. As a specific example, the first polarization region 21F may first be formed in an area overlapping the application electrode 22 to correspond to the width of the application electrode 22, and then grow in the horizontal direction to form a state as shown in FIG. 7B. Additionally, the first polarization region 21R of FIG. 7A may be reduced and changed into a first polarization region 21R1 of the same shape as that of FIG. 7B.

A first variable low resistance region VL1 may be formed between the first polarization region 21F and the second polarization region 21R1.

Then, referring to FIG. 7C, an electric field in a direction opposite to that of FIG. 7B is applied to convert the polarization direction of a portion of the first polarization region 21F into a second polarization region 21R2 having a polarization direction in the second direction. You can. For example, a second polarization region 21R2 may be formed having a polarization direction in a second direction opposite to the first polarization direction of the first polarization region 21F.

In addition, through this, the first polarization region 21F of FIG. 7B can be reduced in size and changed into the first polarization region 21F1 of the form shown in FIG. 7C.

A second variable low-resistance region VL2 may be formed between the second polarization region 21R2 and the first polarization region 21F1.

Since this polarization state is maintained, the first variable low-resistance region VL1 can be maintained as is.

Then, referring to FIG. 7D, an electric field in a direction opposite to that of FIG. 7C is applied to convert the polarization direction of a portion of the second polarization region 21R2 into a first polarization region 21F3 having a polarization direction in the first direction. can do. For example, a first polarization region 21F3 may be formed having a first polarization direction opposite to the second polarization direction of the second polarization region 21R2.

In addition, through this, the second polarization region 21R2 of FIG. 7C can be reduced in size and changed into the second polarization region 21R2 of the form shown in FIG. 7D.

A third variable low-resistance region VL3 may be formed between the second polarization region 21R2 and the first polarization region 21F3.

Since this polarization state is maintained, the first variable low-resistance region VL1 and the second variable low-resistance region VL2 are maintained, and a third variable low-resistance region VL3 can be added.

In this embodiment, an electric field is applied to the active layer through an applied electrode to form a first polarization region having a first polarization direction different from the second polarization direction in the active layer, and a first polarization region is formed at the boundary between the first polarization region and the second polarization region. A corresponding variable low-resistance region can be formed. This variable low-resistance area is a low-resistance area and can serve as a path for current, making it possible to easily form an electronic circuit.

Additionally, this embodiment can control the size of the electric field through the applied electrode and the direction of the electric field, thereby forming a plurality of first polarization regions or a plurality of second polarization regions with respect to the active layer.

A plurality of variable low-resistance regions may be formed on the boundary line between the plurality of first polarization regions or the plurality of second polarization regions. Since each of these plurality of variable low-resistance regions can form a path of current, electronic circuits of various shapes and purposes can be easily created and controlled.

For example, by selectively applying a plurality of variable low-resistance regions centered on the applied electrode, various current paths can be formed, and a memory that stores various data according to these current paths can be implemented.

FIG. 8 is a schematic plan view of another exemplary structure shown to explain an electronic device according to an embodiment of the present invention, and FIG. 9 is a cross-sectional view taken along line II-II of FIG. 8.

8 and 9, the electronic device 100 of this embodiment may include an active layer 110, an applied electrode 120, a variable low-resistance region (VL), and one or more connection electrode portions 131 and 132. there is.

Active layer 110 may include a spontaneously polarizable material. For example, active layer 110 may include an insulating material and may include a ferroelectric material. That is, the active layer 110 may include a material with a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional embodiment, the active layer 110 may include a perovskite-based material, for example, BaTiO _3, SrTiO _3, BiFe3, PbTiO3, PbZrO3, and SrBi2Ta2O9.

Also, as another example, the active layer 110 has an ABX3 structure, where A may include an alkyl group of CnH2n+1 and one or more materials selected from inorganics such as Cs and Ru capable of forming a perovskite solar cell structure, and B may include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 110 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbCl _x Br _3-x (0≤x, y≤1) can do.

Since the active layer 110 can be formed using various other ferroelectric materials, descriptions of all examples thereof will be omitted. Additionally, when forming the active layer 110, the ferroelectric material may be doped with various other materials to include additional functions or improve electrical properties.

The active layer 110 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. Additionally, the active layer 110 can maintain its polarization state even when the applied electric field is removed.

The application electrode 120 may be formed to apply an electric field to the active layer 110, and for example, may apply a voltage to the active layer 110.

As an optional embodiment, the applying electrode 120 may be formed to contact the top surface of the active layer 110.

Additionally, the application electrode 120 can be formed to apply voltages of various sizes to the active layer 110 and to control the time of voltage application.

As an alternative embodiment, the input electrode 120 may be a gate electrode.

For example, the application electrode 120 may be electrically connected to a power source (not shown) or a power control unit.

The applying electrode 120 may include various materials and may include materials with high electrical conductivity. For example, the application electrode 120 can be formed using various metals.

For example, the application electrode 120 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using alloys of these materials or nitrides of these materials.

Additionally, as an optional embodiment, the applying electrode 120 may include a laminate structure.

The connection electrode parts 131 and 132 may include one or more electrode members, for example, a first connection electrode member 131 and a second connection electrode member 132.

The connection electrode portions 131 and 132 may be formed on the active layer 110, for example, may be formed on the upper surface of the active layer 110 to be spaced apart from the application electrode 120, and as an optional embodiment, the active layer 110 ) can be formed to contact.

The first connection electrode member 131 and the second connection electrode member 132 can be formed using various conductive materials. For example, the first connection electrode member 131 and the second connection electrode member 132 may be formed to contain aluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten.

As an optional embodiment, the first connection electrode member 131 and the second connection electrode member 132 may include a structure in which a plurality of conductive layers are stacked.

As an optional embodiment, the first connection electrode member 131 and the second connection electrode member 132 may be formed using a conductive metal oxide, for example, indium oxide (e.g., In ₂ O ₃ ) or tin oxide. (e.g., SnO ₂ ), zinc oxide (e.g., ZnO), indium tin oxide alloy (e.g., In ₂ O ₃ —SnO ₂ ), or indium zinc oxide alloy (e.g., In ₂ O ₃ —ZnO). can be formed.

As an optional embodiment, the connection electrode units 131 and 132 may be terminal members that include input and output of electrical signals.

Also, as a specific example, the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode parts 131 and 132 may include a source electrode or a drain electrode.

FIGS. 10 to 14 are diagrams for explaining the operation of the electronic device of FIG. 8.

FIG. 10 is a diagram showing a state in which a first electric field is applied through the application electrode 120, FIG. 11 is a cross-sectional view taken along line VIII-VIII of FIG. 10, and FIG. 12 is an enlarged view of K in FIG. 11. am.

Referring to FIGS. 10 to 14 , when the first electric field is applied to the active layer 110 through the applied electrode 120, at least one region of the active layer 110 may include a polarization region 110F.

This polarization region 110F may be shaped to surround the application electrode 120 with the application electrode 120 as the center. The polarization region 110F may have a boundary line.

The first variable low-resistance region VL1 may be formed in an area corresponding to the side of this boundary line. Referring to FIG. 10 , it may be formed in a linear shape surrounding the application electrode 120 with the application electrode 120 as the center.

For example, the first variable low-resistance region VL1 may have a first width WVL1 in one direction so as to surround the application electrode 120 .

Additionally, the first variable low-resistance region VL1 may be formed to correspond to the entire side of the boundary line of the polarization region 110F and may have a thickness TVL1 in a direction away from the side of the polarization region 110F.

As an alternative example, this thickness TVL1 may be between 0.1 and 0.3 nanometers.

As an optional embodiment, a process of applying an initialization electric field to the active layer 110 may be performed before the first voltage is applied to the active layer 110 through the applying electrode 120.

The process of applying this initialization electric field to the active layer 110 may include converting the area of the active layer 110 into a polarization area in a direction different from the polarization area 110F, for example, into a polarization area in the opposite direction. .

Then, a polarization region 110F can be formed in one region by applying an electric field in the opposite direction.

The first variable low-resistance region VL1 formed at the boundary of the polarization region 110F of the active layer 110 may change into a region with lower resistance than other regions of the active layer 110. For example, the first variable low-resistance region VL1 may have a lower resistance than the polarization region 110F of the active layer 110 and the region of the active layer 110 surrounding the first variable low-resistance region VL1.

Through this, the first variable low-resistance region VL1 can form a current path.

As an optional embodiment, the first variable low-resistance region VL1 may correspond to one region of a plurality of domain walls provided in the active layer 110.

Additionally, this first variable low-resistance region VL1 can be maintained if the polarization state of the polarization region 110F of the active layer 110 is maintained. That is, even if the first voltage applied to the active layer 110 through the application electrode 120 is removed, the state of the variable low-resistance region VL1, that is, the low-resistance state, can be maintained.

As shown in FIGS. 10 and 11 , a current path may be formed through the first variable low-resistance region VL1. However, since the connection electrode units 131 and 132 do not correspond to the first variable low-resistance region VL1, current may not flow through the connection electrode units 131 and 132.

FIG. 13 is a diagram showing a state in which the first electric field is maintained for a certain period of time through the applied electrode 120, and FIG. 14 is a cross-sectional view taken along line XI-XI of FIG. 13.

Referring to FIGS. 13 and 14 , the maintenance time of the first electric field through the applied electrode 120 becomes longer, and the polarization region 110F of FIGS. 10 and 11 moves in the horizontal direction, thereby increasing the polarization region 110F. A second variable low-resistance region (VL2) larger than the first variable low-resistance region (VL1) may be formed.

For example, the voltage applied in FIGS. 10 and 11 can be continuously maintained for a certain period of time to form the structures shown in FIGS. 13 and 14.

The polarization region 110F may be shaped to surround the application electrode 120 with the application electrode 120 as the center. The polarization region 110F may have a boundary line. The second variable low-resistance region VL2 may be formed in an area corresponding to the side of the boundary line of the polarization region 110F. Referring to FIG. 13, it may be formed in a linear shape surrounding the application electrode 120 with the application electrode 120 as the center.

For example, the second variable low-resistance region VL2 may have a second width WVL2 in one direction to surround the application electrode 120, and the second width WVL2 is greater than the first width WVL1. You can.

In addition, the second variable low-resistance region VL2 may be formed to correspond to the entire side of the boundary line of the polarization region 110F and may have a thickness in a direction away from the side of the polarization region 110F, an optional embodiment. This thickness may be 0.1 to 0.3 nanometers.

The second variable low-resistance region VL2 formed at the boundary of the polarization region 110F of the active layer 110 may change into a region with lower resistance than other regions of the active layer 110. For example, the second variable low-resistance region VL2 may have a lower resistance than the polarization region 110F of the active layer 110 and the region of the active layer 110 surrounding the second variable low-resistance region VL2.

Through this, the second variable low-resistance region VL2 can form a current path.

As an optional embodiment, the second variable low-resistance region VL2 may correspond to one region of a plurality of domain walls provided in the active layer 110.

Additionally, this second variable low-resistance region VL2 can be maintained as long as the polarization state of the active layer 110 is maintained. That is, even if the second voltage applied to the active layer 110 through the application electrode 120 is removed, the state of the second variable low-resistance region VL2, that is, the low-resistance state, can be maintained.

Therefore, a current path can be formed through the second variable low-resistance region VL2.

In addition, as a specific example, the connection electrode parts 131 and 132 are formed to correspond to the second variable low-resistance region VL2, for example, the first connection electrode member 131 of the connection electrode parts 131 and 132 and The second connection electrode members 132 may be arranged to be in contact with the upper surface of the second variable low-resistance region VL2 while being spaced apart from each other.

Through this, current can flow through the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode parts 131 and 132.

Additionally, various electrical signals can be generated. For example, when the electric field in the state of FIGS. 13 and 14 is applied more continuously, that is, when the application time increases, the second variable low-resistance region VL2 moves further to connect the first connection electrode member 131 and the first connection electrode member 131. 2 It is possible to leave the connection electrode member 132. Accordingly, current may not flow through the first connection electrode member 131 and the second connection electrode member 132.

Additionally, as an optional embodiment, an initialization process for the entire active layer 110 may be performed.

Then, when an electric field is applied to the active layer 110 through the application electrode 120 again, current flows through the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode parts 131 and 132. You can.

The electronic circuit of this embodiment can apply voltages of various sizes to the active layer through an application electrode and control the application time.

Through this, a polarization region of a desired size can be formed in the active layer, and a variable low-resistance region can be formed at the boundary of this polarization region.

In order to correspond to this fluctuating low-resistance region, for example, when the connection electrode is formed to be in contact, current can flow through the connection electrode, and even when the voltage is removed, the active layer containing the ferroelectric material can maintain the polarization state. The fluctuating low-resistance region at the boundary can also be maintained, allowing current to continue to flow.

In addition, voltage can be applied to the active layer through an application electrode to change the variable low-resistance region into a polarization region, and through this, current does not flow in the connection electrode portion through which current flows.

The flow of current can be controlled by controlling the voltage of the applied electrode, and through control of the flow of current, electronic circuits can be used for various purposes.

As an alternative embodiment, electronic circuitry may be used as memory.

For example, it can be used as a memory by defining current flow as 1 and non-flow as 0. As a specific example, current can flow even when the voltage is removed, so it can also be used as a non-volatile memory.

Additionally, the electronic circuit can constitute a circuit part that generates and transmits various signals, and can also be used as a switching element.

In addition, since it can be applied with a simple structure to other parts that require control of electrical signals, it can be applied to various fields such as variable circuits, CPUs, and bio chips.

15 and 16 are cross-sectional views of another exemplary structure shown to explain an electronic device according to an embodiment of the present invention.

15 and 16, the electronic device 200 according to an embodiment of the present invention includes a first electrode 210, a second electrode 220 facing the first electrode 210, and a first electrode ( It may include an active layer 230 interposed between 210) and the second electrode 220.

At least one of the first electrode 210 and the second electrode 220 includes a first surface (S1) closest to the active layer 230 and a second surface (S2) furthest from the active layer 230, , At this time, the size of the horizontal cross-sectional area on the first surface (S1) may be smaller than the size of the horizontal cross-sectional area on the second surface (S2). As an example, at least one of the first electrode 210 and the second electrode 220 may include at least one protrusion 212 that protrudes in a direction toward the other electrode.

15 and 16 illustrate that the first electrode 210 includes one protrusion 212, but the present invention is not limited to this, and the protrusion 212 is attached to the second electrode 220. It may be formed on both the first electrode 210 and the second electrode 220. Additionally, a plurality of protrusions 212 may be formed. The protrusion 212 may be formed integrally with the first electrode 210.

Additionally, this configuration of the protrusion 212 may also be applied to electrodes of embodiments described later.

The first electrode 210 and the second electrode 220 are made of a metal material such as platinum, gold, aluminum, silver or copper, a conductive polymer such as PEDOT:PSS or polyaniline, or indium oxide (e.g., In ₂ O). ₃ ), tin oxide (e.g. SnO ₂ ), zinc oxide (e.g. ZnO), indium tin oxide alloy (e.g. In ₂ O _{3 -} SnO ₂ ) or indium zinc oxide alloy (e.g. In ₂ O ₃ - It may contain metal oxides such as ZnO).

Active layer 230 may include a spontaneously polarizable material. For example, the active layer 230 includes an insulating material and may include a ferroelectric material. That is, the active layer 230 may include a material with a spontaneous electrical polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional example, the active layer 230 may include a perovskite-based material, for example, BaTiO _3, SrTiO _3, BiFe3, PbTiO3, PbZrO3, and SrBi2Ta2O9.

Also, as another example, the active layer 230 has an ABX3 structure, where A may include an alkyl group of CnH2n+1 and one or more materials selected from inorganics such as Cs and Ru capable of forming a perovskite solar cell structure, and B. may include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 230 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbCl _x Br _3-x (0≤x, y≤1) can do.

This active layer 230 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. Additionally, the active layer 230 can maintain its polarization state even when the applied electric field is removed.

Meanwhile, the active layer 230 may include a first area A1 vertically overlapping the first surface S1 and a second area A2 outside the first area A1. As described above, since the horizontal cross-sectional area of the first surface (S1) closest to the active layer 230 is narrower than the horizontal cross-sectional area of the second surface (S2), the active layer 230 is vertical to the first surface (S1). The thickness of the overlapping first area A1 may be smaller than the thickness of the second area A2.

The active layer 230 may be polarized in the first direction, as shown in FIG. 15 . For example, both the first area A1 and the second area A2 may have the same polarization in the first direction. In this state, current may not flow between the first electrode 210 and the second electrode 220 due to the active layer 230.

However, when a first voltage greater than the coercive voltage at which the charge of the hysteresis loop of the active layer 230 becomes 0 is applied to the first electrode 210 and the second electrode 220, as shown in FIG. 16 Likewise, the polarization direction of the first area A1 changes due to the first electric field generated between the first electrode 210 and the second electrode 220, and the active layer 230 is formed between the first area A1 and the second electrode 220. It can be divided into area A2.

At this time, the magnitude of the voltage for changing the polarization direction of the domain of the active layer 230 increases in proportion to the thickness of the active layer 230, so in the second area A2, which is thicker than the first area A1, The polarization direction of the active layer 230 does not change. That is, as a first voltage greater than the coercive voltage of the active layer 230 is applied to the first electrode 210 and the second electrode 220, polarization in the second direction different from the first direction occurs only in the first area A1. You can have For example, the first direction and the second direction may be opposite to each other.

Meanwhile, when the polarization directions in the first area (A1) and the second area (A2) are opposite, the unit lattice structure of the active layer 230 is localized at the boundary between the first area (A1) and the second area (A2). As this changes, an electrical polarization different from that of the first area (A1) and the second area (A2) occurs, and as a result, free electrons accumulate at the boundary between the first area (A1) and the second area (A2), causing a current to increase. A variable low-resistance region (C) capable of flowing may be created.

The variable low-resistance area C as described above is formed at the boundary between the first area A1 and the second area A2, and the first area A1 is changed by the area of the first surface S1. , the location where the variable low-resistance region C is generated can also be adjusted by the area of the first surface S1.

Meanwhile, when a second voltage to return the polarization direction of the first area A1 is applied to the first electrode 210 and the second electrode 220, a gap between the first electrode 210 and the second electrode 220 The first area A1 may have polarization in the first direction again due to the generated second electric field. The second voltage may be greater than the coercive voltage of the active layer 230 and may have a polarity opposite to the first voltage. As a result, the polarization difference between the first area A1 and the second area A2 may be eliminated.

When the polarization difference between the first area A1 and the second area A2 disappears, the variable low-resistance area C between the first area A1 and the second area A2 disappears. This state is the same as the state shown in FIG. 15. That is, since the first electrode 210 and the second electrode 220 are insulated by the active layer 230, even if a voltage is applied between the first electrode 210 and the second electrode 220, the first electrode 210 and the second electrode 220 are insulated. No current flows between 210 and the second electrode 220.

Therefore, the flow of current in the electronic device 200 can be controlled by controlling the voltage applied to the first electrode 210 and the second electrode 220, and the electronic device 200 can be controlled by controlling the flow of this current. Can be used for various purposes.

For example, the electronic device 200 can be used as a non-volatile memory. More specifically, as shown in FIG. 16, the polarization direction of the first area A1 is changed by applying a first voltage greater than the coercive voltage to the first electrode 210 and the second electrode 220. After the change, even if no voltage is applied to the first electrode 210 and the second electrode 220, the polarization direction of the first area A1 is maintained unchanged, and this state is expressed as a logic value of '1'. This can be understood as input.

Meanwhile, when the polarization direction of the first area (A1) changes, a variable low-resistance area (C) is formed, so when a read voltage is applied between the first electrode 210 and the second electrode 220, the current easily flows. It flows, and as a result, the logical value '1' can be read. At this time, in order to prevent the polarization of the first area A1 from being affected by the read voltage, the read voltage may be smaller than the coercive voltage of the active layer 230.

Additionally, when a second voltage is applied to the first electrode 210 and the second electrode 220 to return the polarization direction of the first area A1, the polarization of the first area A1 and the second area A2 The direction becomes the same, and this state can be viewed as the logic value '0' being input.

In addition, when the polarization directions of the first area (A1) and the second area (A2) are the same, the variable low-resistance area (C) between the first area (A1) and the second area (A2) disappears. Accordingly, even if a voltage is applied between the first electrode 210 and the second electrode 220, the current does not flow between the first electrode 210 and the second electrode 220, and as a result, the logic value is '0'. You can read .

That is, when the electronic device 200 according to the present invention is used as a memory, the polarization state of the first area A1 is selectively changed by applying voltage to the first electrode 210 and the second electrode 220. , the logic values '1' and '0' can be read by measuring the current flowing in the fluctuating low-resistance region (C) that is created or destroyed accordingly, and data recording and playback speeds are faster than the method of measuring the residual polarization of existing domains. can be improved.

In addition, according to the present invention, the variable low-resistance region C generated according to the application of an electric field can be formed only in a certain region. Therefore, the domain area where the polarization state changes in proportion to the application time of the electric field does not increase or expand, and the fluctuating low-resistance region (C) is formed only in limited locations, so when applied to non-volatile memory, the variable called electric field application time is used. There is an advantage that you don't have to consider it.

In addition, as the first electrode 210 and the second electrode 220 are stacked, the variable low-resistance region C is formed at the shortest distance connecting the first electrode 210 and the second electrode 220. , integration may be possible by reducing the size of the device. In addition, the size of the current flowing when reading logic values '1' and '0' is different, so the readability of the data can be improved.

Additionally, the electronic device 200 according to the present invention can form a circuit unit that generates and transmits various signals, and can also be used as a switching device. For example, the ON/OFF of current flow can be controlled by the creation and disappearance of the variable low-resistance region (C). In addition, the electronic device 200 according to the present invention can be applied in a simple structure to parts that require control of electrical signals, so it can be applied to various fields such as variable circuits, CPUs, and biochips.

As another example, the electronic device 200 according to the present invention can be used in a capacitor that can form various current path control regions. For example, if the distance between the first electrode 210 and the second electrode 220 facing each other is varied, it may vary depending on the size of the electric field applied to the first electrode 210 and the second electrode 220. The position at which the low-resistance region C is formed can be adjusted in various ways, thereby allowing various current path control regions to be formed in the storage battery.

Figures 17 to 19 are cross-sectional views schematically showing another example of the electronic device of Figure 15, respectively.

First, referring to FIG. 17, the electronic device 200B includes a first electrode 210, a second electrode 220 facing the first electrode 210, and a first electrode 210 and a second electrode 220. It may include an active layer 230, a first intermediate layer 291, and a second intermediate layer 292 interposed therebetween.

At least one of the first electrode 210 and the second electrode 220 may include a first surface (S1) closest to the active layer 230 and a second surface (S2) furthest from the active layer 230. You can. At this time, the size of the horizontal cross-sectional area on the first surface (S1) may be smaller than the size of the horizontal cross-sectional area on the second surface (S2).

For example, as shown in FIG. 17 , the first electrode 210 may include a protrusion 212 that protrudes toward the second electrode 220 . Additionally, at least a portion of the protrusion 212 may have a tapered shape. The tapered shape may include a first surface (S1). For example, the protrusion 212 may have a cone shape. However, the shape of the horizontal cross-section of the protrusion 212 is not limited to a circle, and may be various, such as a triangle, square, or polygon.

As such, when the protrusion 212 has a tapered shape including the first surface S1, a voltage to change the polarization of the first area A1 is applied between the first electrode 210 and the second electrode 220. When this happens, the electric field can be concentrated between the first surface S1 and the second electrode 220, so the polarization of the first area A1 can be changed more quickly and effectively.

This configuration of the protrusion 212 of FIG. 17 can also be selectively applied to electrodes included in the embodiments of FIGS. 26 to 32, which will be described later.

FIG. 18 shows an electronic device 200C having a structure in which the first electrode 210 has a tapered shape, similar to FIG. 17 . However, Figure 18 shows an example where the first electrode 210 has an overall tapered shape.

This tapered configuration of the first electrode 210 of FIG. 18 can also be selectively applied to electrodes included in the embodiments of FIGS. 26 to 32, which will be described later.

Additionally, FIG. 19 shows an example in which both the first electrode 210 and the second electrode 220 have a tapered shape. Specifically, the first electrode 210 and the second electrode 220 of the electronic device 200D of FIG. 19 include a first surface (S1) and a second surface (S2), respectively, and the first electrode 210 The first area A1 of the active layer 230 may be defined between the first surface S1 of the second electrode 220 and the first surface S1 of the second electrode 220 . At this time, it is preferable that the areas of the first surface S1 of the first electrode 210 and the first surface S1 of the second electrode 220 facing each other are the same for effective electric field induction.

This tapered configuration of the first electrode 210 and the second electrode 220 of FIG. 19 can also be selectively applied to electrodes included in the embodiments of FIGS. 26 to 32, which will be described later.

Figures 20 to 25 are cross-sectional views schematically showing another example of the electronic device of Figure 15, respectively.

20 to 25 show the shape of the protrusion 212 of the first electrode 210. However, as described above, the present invention is designed to use the first electrode (210 in FIG. 15) and/or the second electrode (210 in FIG. 15). Since 220 may have an overall tapered shape, and the protrusion 212 may be formed integrally with the first electrode (210 in FIG. 15) and/or the second electrode (220 in FIG. 15), hereinafter the protrusion 212 ) may be understood as a part of the first electrode 210 and/or the second electrode 220.

Additionally, the configurations of FIGS. 20 to 25 can be selectively applied to electrodes included in the embodiments of FIGS. 26 to 32 that will be described later.

FIG. 20 is a cross-sectional view schematically showing an example of a cross-section taken along line II' of FIG. 15.

FIG. 20 shows an example in which both the protrusion 212 and the active layer 230 of the electronic device 200E have circular cross-sections.

FIG. 21 is a cross-sectional view schematically showing another example of the cross-section taken along line II' of FIG. 15.

FIG. 21 shows an example where the protrusion 212 of the electronic device 200F has a square cross-section and the active layer 230 has a circular cross-section.

FIG. 22 is a cross-sectional view schematically showing another example of the cross-section taken along line II' of FIG. 15.

FIG. 22 shows an example in which both the protrusion 212 and the active layer 230 of the electronic device 200G have a rectangular cross-section. That is, the protrusion 212 and the active layer 230 are not limited to the above shapes, but may have various shapes.

FIG. 23 is a cross-sectional view schematically showing another example of the cross-section taken along line II' of FIG. 15.

FIG. 23 shows an electronic device 200H including a first protrusion 212a and a second protrusion 212b. The first protrusion 212a and the second protrusion 212b may be spaced apart from each other, and different voltages may be applied to them. For example, when the second electrode (220 in FIG. 15) is formed integrally, two variable low-resistance regions (VL in FIG. 16) may be formed, so when the electronic device 200H is used as a memory, the logic value '0', '1', '2', and '3' can be recorded and read.

FIG. 24 is a cross-sectional view schematically showing another example of the cross-section taken along line II' of FIG. 15.

FIG. 24 shows an electronic device 200I including a first protrusion 212a, a second protrusion 212b, a third protrusion 212c, and a fourth protrusion 212d. The first to fourth protrusions 212a to 212d may be electrically separated from each other. Additionally, the second electrode (220 in FIG. 15) facing the first protrusion 212a, second protrusion 212b, third protrusion 212c, and fourth protrusion 212d may also be separated. Accordingly, when the electronic device 200H is used as a memory, the amount of data processed by the electronic device 200H may increase.

FIG. 25 is a cross-sectional view schematically showing another example of the cross-section taken along line II' of FIG. 15.

FIG. 25 shows an example in which the protrusion 212 of the electronic device 200J extends in one direction.

In addition, the various pattern shapes of the protrusions described above may be selectively applied to embodiments to be described later, and details about this will not be described in detail in the embodiments to be described later.

FIG. 26 is a schematic cross-sectional view showing an electronic device according to an embodiment of the present invention, FIG. 27 is a schematic partial plan view viewed from the K direction of FIG. 26, and FIG. 28 is cut along line Ⅹ-Ⅹ of FIG. 26. This is a cross-sectional view.

The electronic device 400 of this embodiment includes a first electrode set 410A, a second electrode set 410B, a first active layer 410C, a first variable low-resistance region VL14A, a third electrode set 420A, The second active layer 420C, the second variable low-resistance region (VL24A), the fourth electrode set 420B, the third active layer 430C, the fifth electrode set 430A, and the third variable low-resistance region (VL34A). It can be included.

The first electrode set 410A may have a plurality of first electrodes 411A, 412A, 413A, and 414A arranged to be spaced apart from each other. Although three first electrodes are shown in FIG. 26, the present invention is not limited thereto and may include various numbers of first electrodes.

The plurality of first electrodes 411A, 412A, and 413A of the first electrode set 410A may be arranged spaced apart along one direction, for example, in the first direction (for example, the X-axis direction in the drawing). can be arranged accordingly.

The plurality of first electrodes 411A, 412A, and 413A of the first electrode set 410A may be formed to apply a voltage to the first active layer 410C. For example, the plurality of first electrodes 411A, 412A, and 413A may be made of metal materials such as gold, aluminum, silver, or copper, conductive polymers such as PEDOT:PSS or polyaniline, or indium oxide (e.g., In ₂ O). ₃ ), tin oxide (e.g. SnO ₂ ), zinc oxide (e.g. ZnO), indium tin oxide alloy (e.g. In ₂ O _{3 -} SnO ₂ ) or indium zinc oxide alloy (e.g. In ₂ O ₃ - It may contain metal oxides such as ZnO).

The plurality of first electrodes 411A, 412A, and 413A can be individually controlled. The area and number of voltage applications through the plurality of first electrodes 411A, 412A, and 413A can be determined through individual control of the plurality of first electrodes 411A, 412A, and 413A.

As an optional embodiment, the plurality of first electrodes 411A, 412A, and 413A may have a shape extending long along one direction. For example, it may have a shape that extends long along the direction penetrating the page of FIG. 26 or the Y-axis direction of FIG. 28.

A plurality of first electrodes 411A, 412A, and 413A, which are not specifically shown in FIG. 28, may also have a shape extended to have a length while being spaced apart from the first electrode 413A, for example, the first electrode (413A) 413A) and may have a shape extended in parallel.

As an optional embodiment, the plurality of first electrodes 411A, 412A, and 413A may each include a body portion 10ma, a first protrusion 10pa1, and a second protrusion 10pa2.

The main body portion 10ma is the main area of the plurality of first electrodes 411A, 412A, and 413A, and as an optional embodiment, may have a shape extending long in one direction as shown in FIG. 27.

The first protrusion 10pa1 protrudes from the main body 10ma, may have a smaller width than the main body 10ma, and may protrude toward the second electrode set 410B. Through this, the first variable low-resistance region VL14A is easily formed in the area of the first active layer 410C between the first protrusion 10pa1 and the second electrode set 410B through application of a small voltage in a short time. It can be.

As an optional embodiment, the second protrusion 10pa2 protrudes from the main body 10ma and may have a smaller width than the main body 10ma and may protrude in a direction opposite to the first protrusion 10pa1. .

The second electrode set 410B may be arranged to be spaced apart from the plurality of first electrodes 411A, 412A, 413A, and 414A.

Additionally, the second electrode set 410B may be formed to include an area overlapping with the plurality of first electrodes 411A, 412A, 413A, and 414A.

The second electrode set 410B may have a long length extending along the first direction.

The second electrode set 410B may have a plurality of second electrodes 411B, 412B, and 413B arranged to be spaced apart from each other. Although three second electrodes are shown in FIG. 28, the present invention is not limited thereto and may include a various number of second electrodes.

The plurality of second electrodes 411A, 412A, and 413A of the second electrode set 410B may be arranged spaced apart along one direction, for example, in the second direction (for example, the Y-axis direction in FIG. 28). Can be arranged spaced apart along.

The plurality of second electrodes 411B, 412B, and 413B of the second electrode set 410B may be formed to apply voltage to the first active layer 410C and the second active layer 420C. For example, the plurality of second electrodes 411A, 412A, and 413A are made of metal materials such as gold, aluminum, silver, or copper, conductive polymers such as PEDOT:PSS or polyaniline, and indium oxide (e.g., In ₂ O). ₃ ), tin oxide (e.g. SnO ₂ ), zinc oxide (e.g. ZnO), indium tin oxide alloy (e.g. In ₂ O _{3 -} SnO ₂ ) or indium zinc oxide alloy (e.g. In ₂ O ₃ - It may contain metal oxides such as ZnO).

The plurality of second electrodes 411A, 412A, and 413A can be individually controlled. The area and number of voltage applications through the plurality of second electrodes 411A, 412A, and 413A can be determined through individual control of the plurality of second electrodes 411A, 412A, and 413A.

As an optional embodiment, the plurality of second electrodes 411A, 412A, and 413A may have a shape extending long along one direction, for example, may have a shape extending long along the X-axis direction of FIG. 26.

As an optional embodiment, the plurality of second electrodes 411A, 412A, and 413A may be formed side by side and spaced apart from each other.

As an optional embodiment, the plurality of second electrodes 411A, 412A, and 413A may each include a body portion 10mb, a first protrusion 10pb1, and a second protrusion 10pb2.

The main body portion 10mb is the main area of the plurality of second electrodes 411A, 412A, and 413A, and as an optional embodiment, may have a shape extending long in one direction as shown in FIG. 27.

The first protrusion 10pb1 protrudes from the main body 10ma, may have a smaller width than the main body 10mb, and may protrude toward the first electrode set 410A. Through this, the first variable low-resistance region VL14A is easily formed in the area of the first active layer 410C between the first protrusion 10pb1 and the first electrode set 410A through application of a small voltage in a short time. It can be.

As an optional embodiment, the second protrusion 10pb2 protrudes from the main body 10mb, may have a smaller width than the main body 10mb, and may protrude in a direction opposite to the first protrusion 10pb1. .

In addition, the first protrusion 10pb2 of the third electrode set 420A, which will be described later, and the second protrusion 10pb2 of the second electrode set 410B protrude to face each other, so that the second active layer 420C therebetween The resistance region (VL24A) can be easily formed.

(4) The first active layer 410C is formed between the first electrode set 410A and the second electrode set 410B and may include a spontaneously polarizable material.

The first active layer 410C can be formed using the same material as the active layer in the above-described embodiments.

For example, the first active layer 410C may include an insulating material and a ferroelectric material. As an optional example, the first active layer 410C may include a perovskite-based material, for example, BaTiO _3, SrTiO _3, BiFe3, PbTiO3, PbZrO3, and SrBi2Ta2O9.

Also, as another example, the first active layer 410C has an ABX3 structure, where A may include an alkyl group of CnH2n+1 and one or more materials selected from inorganics such as Cs and Ru that can form a perovskite solar cell structure, , B may include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the first active layer 410C is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC(NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , ( CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )( HC(NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbCl _x Br _3-x (0≤x, y≤1) may include.

This first active layer 410C has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. Additionally, the first active layer 410C can maintain its polarization state even when the applied electric field is removed.

(4The first variable low-resistance region VL14A is the boundary of the polarization region fa1 formed in the first active layer 410C by applying an electric field to the first active layer 410C through the first electrode set 410A. It may include an area that corresponds to and has lower electrical resistance than other adjacent areas.

26 to 28 exemplarily show that the first variable low-resistance region VL14A is formed through voltage application to the first electrode 413A of the first electrode set 410A.

The present invention is not limited to this, but corresponds to each of the plurality of first electrodes 411A, 412A, and 413A through individual control of the plurality of first electrodes 411A, 412A, and 413A of the first electrode set 410A and is connected to each other. A plurality of spaced apart first variable low-resistance regions can be selectively formed.

The first variable low-resistance region VL14A may be in contact with the second electrode set 410B. Through this, a current flow can be formed from each of the plurality of first electrodes 411A, 412A, and 413A to the second electrode set 410B, and as a specific example, the plurality of second electrodes of the second electrode set 410B A current flow may be formed in each of (411B, 412B, and 413B).

As a specific example, the voltage applied to each of the plurality of second electrodes 411B, 412B, and 413B of the second electrode set 410B can be individually controlled, and through this, the plurality of first electrodes 411A, 412A, and 413A ) and a plurality of second electrodes 411B, 412B, and 413B may selectively form a first variable low-resistance region VL14A in one or more of the plurality of regions where the second electrodes 411B, 412B, and 413B intersect.

One or more of the plurality of first electrodes (411A, 412A, 413A) and one or more of the plurality of second electrodes (411B, 412B, 413B) through one or more first variable low-resistance regions (VL14A) selectively formed for each region. A flow of current between electrodes may be formed.

Through this, various functions of the electronic device 400 can be implemented.

Since the content of the first variable low-resistance region VL14A can be fully understood through the configuration of the variable low-resistance region in the above-described embodiments, a more detailed description will be omitted.

The third electrode set 420A is spaced apart from the second electrode set 410B, has an area overlapping with the second electrode set 410B, and includes a plurality of third electrodes 421A, 422A, and 423A arranged to be spaced apart from each other. You can have

Although three third electrodes are shown in FIG. 26, the present invention is not limited thereto and may include various numbers of third electrodes.

The plurality of third electrodes 421A, 422A, and 423A of the third electrode set 420A may be arranged spaced apart along one direction, for example, in the first direction (for example, the X-axis direction in the drawing). can be arranged accordingly.

The plurality of third electrodes 421A, 422A, and 423A of the third electrode set 420A may be formed to apply a voltage to the second active layer 420C. For example, the plurality of third electrodes 421A, 422A, and 423A may be formed of the same material as the first electrode set 410A, metal materials such as gold, aluminum, silver, or copper, PEDOT:PSS, or polyaniline ( conductive polymers such as polyaniline, indium oxide (e.g. In ₂ O ₃ ), tin oxide (e.g. SnO ₂ ), zinc oxide (e.g. ZnO), indium tin oxide alloys (e.g. In ₂ O _3- SnO) ₂ ) or a metal oxide such as indium oxide zinc oxide alloy (eg, In ₂ O ₃ -ZnO).

The plurality of third electrodes 421A, 422A, and 423A can be individually controlled. The area and number of voltage applications through the plurality of third electrodes 421A, 422A, and 423A can be determined through individual control of the plurality of third electrodes 421A, 422A, and 423A.

As an optional embodiment, the plurality of third electrodes 421A, 422A, and 423A may have a shape extending long along one direction, for example, may have a shape extending long along a direction perpendicular to the ground.

As a specific example, the plurality of third electrodes 421A, 422A, and 423A are oriented in a direction parallel to the plurality of first electrodes 411A, 412A, and 413A of the first electrode set 410A, for example, in a second direction (e.g. It may have a length extending along the Y-axis direction of FIG. 28.

As an optional example, the plurality of third electrodes 421A, 422A, and 423A may be arranged to include an area overlapping with the plurality of first electrodes 411A, 412A, and 413A of the first electrode set 410A.

As an optional embodiment, the plurality of third electrodes 421A, 422A, and 423A may each include a body portion, a first protrusion, and a second protrusion, which is similar to the structure of the first electrode set 410A described above. It can be applied easily.

The area of the second active layer 420C between the plurality of third electrodes 421A, 422A, 423A and the second electrode set 410B using the shape of the protrusion of the plurality of third electrodes 421A, 422A, 423A. The second variable low-resistance region (VL24AU) in (420c1) can be easily formed by applying a small voltage in a short time.

In addition, by using the shape of the protrusions of the plurality of third electrodes 421A, 422A, 423A, the second active layer 420C is formed between the plurality of third electrodes 421A, 422A, 423A and the fourth electrode set 420B, which will be described later. ) The second variable low-resistance region VL24AD can be easily formed in the region 420c2 by applying a small voltage in a short time.

As an optional embodiment, the plurality of third electrodes 421A, 422A, and 423A may each include an area overlapping with the plurality of first electrodes 411A, 412A, and 413A and may be formed side by side.

The second active layer 420C may include a first region 420c1 and a second region 420c2. The second active layer 420C may include a self-polarizing material. For example, the second active layer 420C can be formed using the same material as the active layer in the above-described embodiments.

The first region 420c1 of the second active layer 420C may be formed between the second electrode set 410B and the third electrode set 420A.

The second region 420c2 of the second active layer 420C may be formed between the third electrode set 420A and the fourth electrode set 420B.

As shown in the drawing, the first region 420c1 and the second region 420c2 of the second active layer 420C may be formed to be connected. For example, the second active layer 420C may be formed integrally.

Additionally, as another example, the first region 420c1 and the second region 420c2 of the second active layer 420C may be formed as different layers, and as an optional embodiment, may be formed to be spaced apart from each other rather than connected to each other.

The second variable low-resistance area VL24A may include a first area VL24AU and a second area VL24AD.

The first region (VL24AU) of the second variable low-resistance region (VL24A) applies an electric field to the first region (420C1) of the second active layer (420C) through the third electrode set (420A) to form the second active layer (VL24AU). It may include a region corresponding to the boundary of the polarization region formed in the first region 420C1 of (420C) and having lower electrical resistance than other adjacent regions.

Also, as an optional embodiment, the voltage applied to each of the plurality of third electrodes 421A, 422A, and 423A of the third electrode set 420A and the plurality of second electrodes 411B, 412B of the second electrode set 410B, The voltage applied to each of the 413B) can be individually controlled, and through this, the plurality of third electrodes 421A, 412A, 413A and the plurality of second electrodes 411B, 412B, 413B are selected from among the plurality of areas where they intersect each other. The first area (VL24AU) of the second variable low-resistance area (VL24A) may be selectively formed in one or more areas.

One or more of the plurality of second electrodes 411B, 412B, 413B and the plurality of third electrodes 421A, A current flow between one or more electrodes (422A, 423A) may be formed.

The second region VL24AD of the second variable low-resistance region VL24A applies an electric field to the second region 420C2 of the second active layer 420C through the third electrode set 420A, thereby forming the second active layer. It may include a region corresponding to the boundary of the polarization region formed in the second region 420C2 of (420C) and having lower electrical resistance than other adjacent regions.

In addition, as an optional embodiment, the voltage applied to each of the plurality of third electrodes 421A, 422A, and 423A of the third electrode set 420A and the plurality of fourth electrodes 421B of the fourth electrode set 420B, which will be described later, The voltage applied to each of (422B, 423B) can be individually controlled, and through this, a plurality of third electrodes (421A, 412A, 413A) and a plurality of fourth electrodes (421B, 422B, 423B) intersect each other. The second region VL24AD of the second variable low-resistance region VL24A may be selectively formed in one or more of the regions.

One or more of the plurality of third electrodes (421A, 422A, 423A) and the plurality of fourth electrodes (421B) through the second region (VL24AD) of one or more second variable low-resistance regions (VL24A) selectively formed for each region. , 422B, 423B), a current flow may be formed between one or more electrodes.

The first region (VL24AU) and the second region (VL24AD) of the second variable low-resistance region (VL24A) corresponding to the third electrode set 420A can be easily formed, for example, the second variable low-resistance region. The first region (VL24AU) and the second region (VL24AD) of (VL24A) may be formed simultaneously.

The fourth electrode set 420B may be arranged to be spaced apart from the plurality of third electrodes 421A, 422A, and 423A of the third electrode set 420A.

Additionally, the fourth electrode set 420B may be formed to include an area overlapping with a plurality of third electrodes 421A, 422A, and 423A.

The fourth electrode set 420B may have a long length extending along the first direction.

The fourth electrode set 420B may have a plurality of fourth electrodes 421B, 422B, and 423B arranged to be spaced apart from each other. Although three fourth electrodes are shown in FIG. 28, the present invention is not limited thereto and may include a various number of fourth electrodes.

The plurality of fourth electrodes 421A, 422A, and 423A of the fourth electrode set 420B may be arranged spaced apart along one direction, for example, in the second direction (for example, the Y-axis direction in FIG. 28). It can be arranged spaced apart along .

The plurality of fourth electrodes 421A, 422A, and 423A of the fourth electrode set 420B may be formed to apply voltage to the second active layer 420C and the third active layer 430C.

The plurality of fourth electrodes 421A, 422A, and 423A can be individually controlled. The area and number of voltage applications through the plurality of fourth electrodes 421A, 422A, and 423A can be determined through individual control of the plurality of fourth electrodes 421A, 422A, and 423A.

As an optional embodiment, the plurality of fourth electrodes 421A, 422A, and 423A may have a shape extending long along one direction, for example, may have a shape extending long along the X-axis direction of FIG. 26.

As an optional embodiment, the plurality of fourth electrodes 421A, 422A, and 423A may be formed side by side and spaced apart from each other.

As an optional embodiment, the plurality of fourth electrodes 421A, 422A, and 423A may each include a main body, a first protrusion, and a second protrusion, and may, for example, maintain the structure of the above-described second electrode set 410B as is. It can be applied.

As an optional embodiment, a fifth electrode set 430A may be further disposed.

The fifth electrode set 430A is spaced apart from the fourth electrode set 420B, has an area overlapping with the fourth electrode set 420B, and includes a plurality of fifth electrodes 431A, 432A, 433A, and 434A arranged to be spaced apart from each other. ) can have.

Although four fifth electrodes are shown in FIG. 31, the present invention is not limited thereto and may include various numbers of fifth electrodes.

The fifth electrode set 430A is spaced apart from the fourth electrode set 420B, has an area overlapping with the fourth electrode set 420B, and includes a plurality of fifth electrodes 431A, 432A, and 433A arranged to be spaced apart from each other. You can have

The fifth electrode set 430A is the same as the first electrode set 410A or the third electrode set 420A, or is within a range that can be partially modified as needed, and for convenience of explanation, the fifth electrode set 430A is referred to as the fifth electrode set 430A. A more detailed explanation is omitted.

The third active layer 430C is formed between the fifth electrode set 430A and the fourth electrode set 420B and may include a spontaneously polarizable material.

The third active layer 430C can be formed using the same material as the active layers of the above-described embodiments.

The third active layer 430C is the same as the first active layer 410C or the second active layer 420C or can be partially modified as needed. For convenience of explanation, more detailed information about the third active layer 430C is provided. The explanation is omitted.

The third variable low-resistance region VL34A corresponds to the boundary of the polarization region formed in the third active layer 430C by applying an electric field to the third active layer 430C through the fifth electrode set 430A and is another adjacent region. It may include areas with lower electrical resistance.

Also, as an optional embodiment, the voltage applied to each of the plurality of fifth electrodes 431A, 432A, and 433A of the fifth electrode set 430A and the plurality of fourth electrodes 421B, 422B of the fourth electrode set 420B, The voltage applied to each of the 423B) can be individually controlled, and through this, the plurality of fifth electrodes 431A, 432A, 433A and the plurality of fourth electrodes 421B, 422B, 423B are selected from among the plurality of areas where they intersect each other. A third variable low-resistance region (VL34A) may be selectively formed in one or more regions.

One or more of the plurality of fifth electrodes (431A, 432A, 433A) and one or more of the plurality of fourth electrodes (421B, 422B, 423B) through one or more third variable low-resistance regions (VL34A) selectively formed for each region. A flow of current between electrodes may be formed.

As an optional example, the electronic device 400 of this embodiment may include a first protective layer (CPV1) or a second protective layer (CPV2).

The first protective layer (CPV1) may be formed on the first electrode set (410A). For example, the first protective layer (CPV1) may be formed on the first electrode set (410A), and as an optional embodiment, the first protective layer (CPV1) may be formed to cover the first electrode set (410A). there is.

The first protective layer (CPV1) can protect the first electrode set 410A, and through this, the first active layer ( 410C), the third electrode set 420A, the second active layer 420C, the fourth electrode set 420B, the third active layer 430C, and the fifth electrode set 430A can be easily protected.

Additionally, as an optional embodiment, the first protective layer (CPV1) may be formed to contact the first active layer (410C). Through this, damage and separation of the first active layer 410C can be easily reduced and prevented.

The first protective layer (CPV1) can be formed using various materials, for example, an insulating material.

The second protective layer (CPV2) may be formed on the fifth electrode set (430A). For example, the second protective layer (CPV2) may be formed on the fifth electrode set (430A), and as an optional embodiment, the second protective layer (CPV2) may be formed to cover the fifth electrode set (430A). there is.

The second protective layer (CPV2) can protect the fifth electrode set 430A, and through this, the third active layer ( 430C), the fourth electrode set 420B, the second active layer 420C, the third electrode set 420A, the first active layer 410C, and the first electrode set 410A can be easily protected.

Additionally, as an optional embodiment, the second protective layer (CPV2) may be formed to contact the third active layer (430C). Through this, damage and separation of the third active layer 430C can be easily reduced and prevented.

The second protective layer (CPV2) can be formed using various materials, for example, an insulating material.

Additionally, as an optional embodiment, the electronic device 400 may include both a first protective layer (CPV1) and a second protective layer (CPV2), through which one side of the electronic device 400 and the other side facing it are protected. It can be done easily.

The first protective layer (CPV1) or the second protective layer (CPV2) can be selectively applied to embodiments to be described later, and therefore, such descriptions will be omitted in the embodiments to be described later.

The electronic device of this embodiment can form variable low-resistance regions in the active layer by individually controlling the plurality of first electrodes of the first electrode set, for example, a plurality of variable low-resistance regions spaced apart from each other to correspond to the plurality of first electrodes. A first variable low-resistance region may be formed.

In addition, the electronic device of this embodiment can form variable low-resistance regions in the active layer by individually controlling the plurality of third electrodes of the third electrode set, for example, a plurality of variable low-resistance regions spaced apart from each other to correspond to the plurality of third electrodes. A second variable low-resistance region may be formed.

In addition, at this time, when forming a second variable low-resistance region in the active layer by individually controlling the plurality of third electrodes of the third electrode set, a second variable low-resistance region is formed in one direction and the other direction of the third electrode set. A first region and a second region may be formed.

For example, a voltage is applied to the active layer through one third electrode, so that the first region of the second variable low-resistance region is in one direction of the one third electrode and the second region of the second variable low-resistance region is in the other direction. Areas can be formed.

Through this, one variable low-resistance region can be formed on each opposing side of one third electrode.

This first variable low-resistance region may be in contact with the second electrode of the second electrode set, and through this, current may flow between the first electrode and the second electrode.

Additionally, the first region of the second variable low-resistance region may be in contact with the second electrode, and through this, current may flow between the third electrode and the second electrode.

At the same time, the second region of the second variable low-resistance region may be in contact with the fourth electrode, and through this, current may flow between the third electrode and the fourth electrode.

Additionally, as an optional embodiment, a fifth electrode set having a plurality of fifth electrodes may be further included.

Through this, the third variable low-resistance region can come into contact with the fourth electrode, and through this, current flow can occur between the fifth electrode and the fourth electrode.

As a result, a flow of current may occur between the first electrode set and the third electrode set, and also a flow of current may occur between the third electrode set and the fifth electrode set, and further, if necessary, a flow of current may occur between the first electrode set and the third electrode set. 5 Current flow can occur between sets of electrodes.

Input and output of various data may be possible through individual signal control of the plurality of electrodes of the first, third, and fifth electrode sets and recognition of the flow of current through them.

Additionally, the flow of current between the first electrode set and the third electrode set and the flow of current between the third electrode set and the fifth electrode set can be controlled in various ways.

Through this, electronic devices with various uses and various characteristics can be implemented, for example, memories with high integration can be implemented.

In addition, individual voltage control can be performed through a plurality of electrodes of the electrode sets that intersect each other, for example, a plurality of electrodes of the first electrode set, and individual control through a plurality of electrodes of the second electrode set, and thus, the first electrode set can be controlled individually. A variable low-resistance region may be formed in a region of the active layer corresponding to one or more regions among the plurality of regions where the plurality of electrodes and the plurality of electrodes of the second electrode set overlap each other.

Through this, it is possible to facilitate the control of various and complex electrical signals, improve the integration of memory devices, and facilitate the implementation of precise electrical devices.

Figure 29 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.

The electronic device 500 of this embodiment includes a first electrode set 510A, a second electrode set 510B, a third electrode set 520A, a fourth electrode set 520B, and a fifth electrode set 530A. can do.

The first electrode set 510A may include a plurality of first electrodes 511A, 512A, and 513A that are spaced apart from each other and can be individually controlled. The plurality of first electrodes 511A, 512A, and 513A may extend in one direction and have a length.

The second electrode set 510B may include a plurality of second electrodes 511B, 512B, and 513B that are spaced apart from each other and can be individually controlled. The plurality of second electrodes 511B, 512B, and 513B may have a length extending in a direction intersecting the plurality of first electrodes 511A, 512A, and 513A, for example, in a direction perpendicular to the plurality of first electrodes 511A, 512A, and 513A.

Although not shown, an active layer is disposed between the first electrode set 510A and the second electrode set 510B, and a plurality of overlapping areas of the active layer include the first electrode set 510A and the second electrode set 510B. In the regions, one or more variable low-resistance regions may be selectively formed according to individual control of each of the plurality of electrodes of the first electrode set 510A and the second electrode set 510B, and the flow of current through this region may be formed. A star can be formed.

The third electrode set 520A may include a plurality of third electrodes 521A, 522A, and 523A that are spaced apart from each other and can be individually controlled. The plurality of third electrodes 521A, 522A, and 523A may have a length extending along one direction. The plurality of third electrodes 521A, 522A, and 523A may have a length extending in a direction intersecting the plurality of second electrodes 511B, 512B, and 513B, for example, in a direction perpendicular to the plurality of second electrodes 511B, 512B, and 513B.

Although not shown, an active layer is disposed between the third electrode set 520A and the second electrode set 510B, and a plurality of overlapping areas of the active layer include the third electrode set 520A and the second electrode set 510B. In the regions, one or more variable low-resistance regions may be selectively formed according to individual control of each of the plurality of electrodes of the third electrode set 520A and the second electrode set 510B, and the flow of current through this region may be formed. A star can be formed.

The fourth electrode set 520B may include a plurality of fourth electrodes 521B, 522B, and 523B that are spaced apart from each other and can be individually controlled. The plurality of fourth electrodes 521B, 522B, and 523B may have a length extending in a direction intersecting the plurality of third electrodes 521A, 522A, and 523A, for example, in a direction perpendicular to the plurality of third electrodes 521A, 522A, and 523A.

Although not shown, an active layer is disposed between the third electrode set 520A and the fourth electrode set 520B, and a plurality of overlapping areas of the active layer include the third electrode set 520A and the fourth electrode set 520B. In the regions, one or more variable low-resistance regions may be selectively formed according to individual control of each of the plurality of electrodes of the third electrode set 520A and the fourth electrode set 520B, and the flow of current through this region may be formed. A star can be formed.

The fifth electrode set 530A may include a plurality of third electrodes 531A, 532A, and 533A that are spaced apart from each other and can be individually controlled. The plurality of fifth electrodes 531A, 532A, and 533A may extend in one direction and have a length. The plurality of fifth electrodes 531A, 532A, and 533A may have a length extending in a direction intersecting the plurality of fifth electrodes 531B, 532B, and 533B, for example, in a direction perpendicular to the plurality of fifth electrodes 531B, 532B, and 533B.

Although not shown, an active layer is disposed between the fifth electrode set 530A and the fourth electrode set 520B, and a plurality of overlapping areas of the active layer include the fifth electrode set 530A and the fourth electrode set 520B. In the regions, one or more variable low-resistance regions may be selectively formed according to individual control of each of the plurality of electrodes of the fifth electrode set 530A and the fourth electrode set 520B, and the flow of current through this region may be formed. A star can be formed.

Figure 30 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.

The electronic device 600 of this embodiment includes a first electrode set 610A, a second electrode set 610B, a third electrode set 620A, a fourth electrode set 620B, a fifth electrode set 630A, and a third electrode set 620A. It may include a 6th electrode set 630B, a 7th electrode set 640A, an 8th electrode set 640B, and a 9th electrode set 650A.

The first electrode set 610A may include a plurality of first electrodes 611A, 612A, 613A, 614A, and 615A that are spaced apart from each other and can be individually controlled.

The second electrode set 610B may include a plurality of second electrodes 611B, 612B, 613B, 614B, and 615B that are spaced apart from each other and can be individually controlled.

The third electrode set 620A may include a plurality of third electrodes 621A, 622A, 623A, 624A, and 625A that are spaced apart from each other and can be individually controlled.

The fourth electrode set 620B may include a plurality of fourth electrodes 621B, 622B, 623B, 624B, and 625B that are spaced apart from each other and can be individually controlled.

The fifth electrode set 630A may include a plurality of fifth electrodes 631A, 632A, 633A, 634A, and 635A that are spaced apart from each other and can be individually controlled.

The sixth electrode set 630B may include a plurality of sixth electrodes 631B, 632B, 633B, 634B, and 635B that are spaced apart from each other and can be individually controlled.

The seventh electrode set 640A may include a plurality of seventh electrodes 641A, 642A, 643A, 644A, and 645A that are spaced apart from each other and can be individually controlled.

The eighth electrode set 640B may include a plurality of eighth electrodes 641B, 642B, 643B, 644B, and 645B that are spaced apart from each other and can be individually controlled.

The ninth electrode set 650A may include a plurality of first electrodes 611A, 612A, 613A, 614A, and 615A that are spaced apart from each other and can be individually controlled.

The number of electrodes included in the electrode sets of the present invention and formed to be spaced apart from each other and individually controlled can be determined in various ways. In the above-described embodiments, the plurality of electrodes is described as 3 or 5, but this is an example and an electrode set is formed to include a various number of electrodes depending on the size and purpose of the electrical device to be manufactured, as a specific example, a memory device, etc. can do.

As an optional embodiment, the number of electrodes included in each electrode set may be the same, and if necessary, the electrode sets may be formed to have different numbers of electrodes.

Additionally, the number of electrode sets included in the present invention can be determined in various ways. In the above-described embodiments, 5 electrode sets and 9 electrode sets were described, but this is an example and the electrode sets are configured to include various numbers of electrodes depending on the size and purpose of the electrical device to be manufactured, as a specific example, a memory device, etc. can be formed.

By varying the electrode set, electronic devices of various thicknesses or heights can be implemented based on the drawing, memory devices with increased integration by precisely controlling the flow of current in the thickness or height direction, and devices for precise signal transmission. Various electronic devices such as these can be easily implemented.

As such, the present invention has been described with reference to the embodiments shown in the drawings, but these are merely illustrative, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. . Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the attached patent claims.

Specific implementations described in the embodiments are examples and do not limit the scope of the embodiments in any way. Additionally, if there is no specific mention such as “essential,” “important,” etc., it may not be a necessary component for the application of the present invention.

In the specification of the embodiment (particularly in the claims), the use of the term “above” and similar referential terms may refer to both the singular and the plural. In addition, when a range is described in an example, the invention includes the application of individual values within the range (unless there is a statement to the contrary), and is the same as describing each individual value constituting the range in the detailed description. . Lastly, unless the order of the steps constituting the method according to the embodiment is clearly stated or there is no description to the contrary, the steps may be performed in an appropriate order. The embodiments are not necessarily limited by the order of description of the steps above. The use of any examples or illustrative terms (e.g., etc.) in the embodiments is merely for describing the embodiments in detail, and unless limited by the claims, the scope of the embodiments is not limited by the examples or illustrative terms. That is not the case. Additionally, those skilled in the art will recognize that various modifications, combinations and changes may be made depending on design conditions and factors within the scope of the appended claims or their equivalents.

100, 200, 400, 500, 600: Electronic devices
110, 230, 410C: active layer
120: applied electrode
VL, VL1, VL2, VL14A: Variable low-resistance region
410A: first electrode set
410B: Second electrode set
420A: Third electrode set

Claims (2)

A first electrode set having a plurality of first electrodes arranged to be spaced apart from each other;
a second electrode set having a plurality of second electrodes spaced apart from the plurality of first electrodes and formed to include an area overlapping with the plurality of first electrodes;
a first active layer formed between the first electrode set and the second electrode set and comprising a spontaneously polarizable material;
One or more electrodes including a region corresponding to the boundary of a polarization region formed in the first active layer by applying an electric field to the first active layer through the first electrode set or the second electrode set and having a lower electrical resistance than other adjacent regions. 1 Variable low-resistance region;
a third electrode set spaced apart from the second electrode set and having a plurality of third electrodes arranged to be spaced apart from each other and having an area overlapping with the plurality of second electrodes;
a second active layer formed between the second electrode set and the third electrode set and including a spontaneously polarizable material; and
One or more electrodes including a region corresponding to the boundary of a polarization region formed in the second active layer by applying an electric field to the second active layer through the third electrode set or the second electrode set and having a lower electrical resistance than other adjacent regions. 2 Contains a variable low-resistance region,
At least one second electrode of the second electrode set includes a main body, a first protrusion formed from the main body towards the first electrode, and a second protrusion formed from the main body towards the third electrode. ,
Electronic devices based on variable low-resistance regions. A first electrode set having a plurality of first electrodes arranged to be spaced apart from each other, a plurality of spaced apart from the plurality of first electrodes and formed to include a region spaced apart from the plurality of first electrodes and overlapping with the plurality of first electrodes. a second electrode set having a second electrode, a first active layer formed between the first electrode set and the second electrode set and comprising a spontaneously polarizable material, spaced apart from the second electrode set and the second electrode a third electrode set having a plurality of third electrodes with overlapping regions and arranged to be spaced apart from each other, and a second active layer formed between the second electrode set and the third electrode set and comprising a spontaneously polarizable material. Regarding electronic devices based on variable low-resistance regions including,
forming a polarization region of the active layer by applying an electric field to the first active layer through the first electrode set or the second electrode set; and
Forming a first variable low-resistance region including a region with lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region, and forming at least one of the plurality of first electrodes through the first variable low-resistance region. A step of forming a current flow between one electrode and at least one of the plurality of second electrodes,
Contains,
At least one second electrode of the second electrode set includes a main body, a first protrusion formed from the main body towards the first electrode, and a second protrusion formed from the main body towards the third electrode. ,
Electronic device control method based on variable low-resistance region.

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