KR20210014100A - 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR20210014100A
KR20210014100A KR1020207032439A KR20207032439A KR20210014100A KR 20210014100 A KR20210014100 A KR 20210014100A KR 1020207032439 A KR1020207032439 A KR 1020207032439A KR 20207032439 A KR20207032439 A KR 20207032439A KR 20210014100 A KR20210014100 A KR 20210014100A
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KR
South Korea
Prior art keywords
layer
phase shift
film
mask
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020207032439A
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English (en)
Korean (ko)
Inventor
히로아키 시시도
히토시 마에다
마사히로 하시모토
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20210014100A publication Critical patent/KR20210014100A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Element Separation (AREA)
KR1020207032439A 2018-05-30 2019-05-08 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 Ceased KR20210014100A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-103475 2018-05-30
JP2018103475A JP6938428B2 (ja) 2018-05-30 2018-05-30 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
PCT/JP2019/018386 WO2019230312A1 (ja) 2018-05-30 2019-05-08 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20210014100A true KR20210014100A (ko) 2021-02-08

Family

ID=68697965

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207032439A Ceased KR20210014100A (ko) 2018-05-30 2019-05-08 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법

Country Status (7)

Country Link
US (1) US20210132488A1 (https=)
JP (1) JP6938428B2 (https=)
KR (1) KR20210014100A (https=)
CN (1) CN112166376A (https=)
SG (1) SG11202010537VA (https=)
TW (1) TWI791837B (https=)
WO (1) WO2019230312A1 (https=)

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JP7350682B2 (ja) * 2020-03-23 2023-09-26 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
WO2022004350A1 (ja) * 2020-06-30 2022-01-06 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP7543116B2 (ja) * 2020-12-09 2024-09-02 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
US12444155B2 (en) * 2023-08-25 2025-10-14 Kla Corporation Robust image-to-design alignment for dram
CN117348329B (zh) * 2023-10-20 2025-05-13 湖南普照信息材料有限公司 一种低折射率低消光系数的相移掩模坯料制作方法

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JP2012074695A (ja) 2010-09-23 2012-04-12 Asml Netherlands Bv 偏光を用いたプロセスチューニング
JP5054766B2 (ja) 2007-04-27 2012-10-24 Ｈｏｙａ株式会社 フォトマスクブランク及びフォトマスク
JP2014137388A (ja) 2013-01-15 2014-07-28 Hoya Corp マスクブランク、位相シフトマスクおよびこれらの製造方法

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JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
US5514499A (en) * 1993-05-25 1996-05-07 Kabushiki Kaisha Toshiba Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same
JP2001201842A (ja) * 1999-11-09 2001-07-27 Ulvac Seimaku Kk 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
US20020197509A1 (en) * 2001-04-19 2002-12-26 Carcia Peter Francis Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
US7011910B2 (en) * 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
JP2005156700A (ja) * 2003-11-21 2005-06-16 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク、位相シフトマスクブランクの製造方法、及びパターン転写方法
JP5257256B2 (ja) * 2009-06-11 2013-08-07 信越化学工業株式会社 フォトマスクの製造方法
JP5714266B2 (ja) * 2009-08-25 2015-05-07 Hoya株式会社 マスクブランク、転写用マスクおよびこれらの製造方法
KR102166222B1 (ko) * 2013-01-15 2020-10-15 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법
JP6373607B2 (ja) * 2013-03-08 2018-08-15 Hoya株式会社 マスクブランクの製造方法および位相シフトマスクの製造方法
JP6153894B2 (ja) * 2014-07-11 2017-06-28 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
KR101810805B1 (ko) * 2014-12-26 2017-12-19 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP6352224B2 (ja) * 2015-07-17 2018-07-04 Hoya株式会社 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法
TWI720752B (zh) * 2015-09-30 2021-03-01 日商Ｈｏｙａ股份有限公司 空白遮罩、相位移轉遮罩及半導體元件之製造方法
KR102368405B1 (ko) * 2015-11-06 2022-02-28 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6302520B2 (ja) * 2016-09-07 2018-03-28 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法および半導体デバイスの製造方法

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JP5054766B2 (ja) 2007-04-27 2012-10-24 Ｈｏｙａ株式会社 フォトマスクブランク及びフォトマスク
JP2012074695A (ja) 2010-09-23 2012-04-12 Asml Netherlands Bv 偏光を用いたプロセスチューニング
JP2014137388A (ja) 2013-01-15 2014-07-28 Hoya Corp マスクブランク、位相シフトマスクおよびこれらの製造方法

Also Published As

Publication number Publication date
TWI791837B (zh) 2023-02-11
CN112166376A (zh) 2021-01-01
JP2019207359A (ja) 2019-12-05
JP6938428B2 (ja) 2021-09-22
TW202004328A (zh) 2020-01-16
SG11202010537VA (en) 2020-11-27
WO2019230312A1 (ja) 2019-12-05
US20210132488A1 (en) 2021-05-06

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