KR20200040472A - Producing method of mask - Google Patents

Abstract

The present invention relates to a manufacturing method of a mask, which is able to form a plating film precisely on a desired part with uniform thickness. According to the present invention, the manufacturing method of the mask, as a method of manufacturing a mask (100) by electroforming, comprises: a step (a) of providing a conductive base material (21); a step (b) of arranging blocking units (70) on one surface of the conductive base material (21); and a step (c) of using the conductive base material (21) as a cathode body and forming plating films (100: 110, 120, 130) on the other surface facing the one surface of the conductive base material (21) by electroforming. The step (c) forms the plating films (100: 110, 120, 130) up to the blocking units (70) of the other surface, the side surfaces, and at least one surface of the conductive base material (21).

Description

Mask manufacturing method {PRODUCING METHOD OF MASK}

The present invention relates to a method of manufacturing a mask. More specifically, the present invention relates to a method of manufacturing a mask that can form a mask having a pattern by using an electroplating method and prevent deformation of the mask and clarify alignment.

Recently, studies on electroforming methods have been conducted in the manufacture of thin plates. The electroplating method is a method in which an anode and a cathode body are immersed in an electrolyte, and a metal thin plate is electrodeposited on the surface of the cathode body by applying a power source, and thus a mass production is expected.

On the other hand, as a technique for forming a pixel in the OLED manufacturing process, the FMM (Fine Metal Mask) method, which deposits an organic substance in a desired position by attaching a thin metal mask to a substrate, is mainly used.

1 is a schematic view showing a conventional FMM (Fine Metal Mask) manufacturing process.

Referring to FIG. 1, in the conventional mask manufacturing method using plating, a substrate 4 (FIG. 1 (a)) is prepared, and a PR 2 having a predetermined pattern is coated on the substrate 4. [Fig. 1 (b)]. Subsequently, plating is performed on the substrate 4 to form a thin metal plate 3 (Fig. 1 (c)). Subsequently, the PR 2 is removed (Fig. 1 (d)), and the mask 3 (or the metal thin plate 3) on which the pattern P is formed is separated from the substrate 4 to complete the production.

The metal thin plate 3 produced by plating as shown in FIG. 1 has a higher thermal expansion coefficient than the metal thin plate produced by rolling. When using a thin metal plate as an FMM, the lower the thermal expansion coefficient, the less the deformation of the pattern to heat can be performed, thereby performing a high-quality pixel process. Therefore, the thermal expansion coefficient can be lowered by performing heat treatment (H) on the metal thin plate 3 produced by plating. However, when performing the heat treatment (H) as shown in Figure 1 (e), there was a problem that the metal thin plate 3 on the substrate 4 is peeled (3 '). Even the peeling (3 ') is torn, crushed, folded or wrinkled, the pattern (P') form becomes unclear, there is a problem that can not be used as a product.

In the ultra-high quality OLED manufacturing process, even fine alignment errors of a few μm may lead to failure of pixel deposition, so a technique for manufacturing an FMM having a low thermal expansion coefficient is required to prevent deformation due to heat in the pixel deposition process. to be.

In addition, there is a problem that the metal thin plate 3 is not plated only on the upper surface portion of the desired substrate 4, and the metal thin plate 3 is plated with a non-uniform thickness on the side surface, rear surface, etc. of the substrate 4.

Accordingly, the present invention has been made to solve the problems of the prior art as described above, and its object is to provide a method of manufacturing a mask capable of accurately forming a plating film on a desired portion with a uniform thickness.

In addition, it is an object of the present invention to provide a mask manufacturing method capable of manufacturing a mask having a low coefficient of thermal expansion through heat treatment, preventing peeling of the mask during the heat treatment, and preventing deformation of the mask pattern. do.

The above object of the present invention is a method of manufacturing a mask by electroforming, comprising: (a) providing a conductive substrate; (b) disposing a blocking portion on one surface of the conductive substrate; And (c) using a conductive substrate as a cathode body, and forming a plating film on the other surface opposite to one surface of the conductive substrate by electroforming, in step (c), It is achieved by a method of manufacturing a mask, forming a plated film to the other side, the side surface and at least one side of the block.

Between steps (b) and (c), a step of connecting the adsorbing plate on the blocking portion may be further included.

The adsorption plate can be pulled by the adsorption plate by applying an absorbent pressure to the conductive substrate.

The blocking portion may be an elastic material.

The blocking portion has an empty ring shape inside, and a plating film may be formed up to the outer circumferential space of the ring.

The blocking portion may be an O-ring.

(d) heat-treating the plating film; And (e) separating the plated film from the conductive substrate.

The heat treatment may be performed at 300 ° C to 800 ° C.

Between steps (d) and (e), a step of cutting the edge region of the plated film may be further included.

(f) forming a mask pattern on the plated film may be further included.

In step (a), a patterned insulating portion is formed on the other surface of the conductive substrate, and in step (c), a plating film may be formed on the other surface except for the portion where the insulating portion is formed.

The conductive substrate may be a doped single crystal silicon material.

The insulating portion may be any one of photoresist, silicon oxide, and silicon nitride.

The insulating portion may have a tapered shape or a reverse tapered shape.

The plating film may be made of Invar or Super Invar material.

According to the present invention configured as described above, there is an effect capable of accurately forming a plating film on a desired portion with a uniform thickness.

In addition, according to the present invention, it is possible to manufacture a mask having a low coefficient of thermal expansion through heat treatment, and to prevent peeling of the mask during the heat treatment process and to prevent deformation of the mask pattern.

1 is a schematic view showing a conventional FMM (Fine Metal Mask) manufacturing process.
2 is a schematic diagram showing an OLED pixel deposition apparatus using an integrated frame mask according to an embodiment of the present invention.
3 is a schematic view showing an electroforming plate apparatus according to an embodiment of the present invention.
4 is a schematic diagram showing a mask according to an embodiment of the present invention.
5 is a schematic diagram showing a process of forming a plated film according to an embodiment of the present invention.
6 is a schematic view showing a process of forming a plated film according to another embodiment of the present invention.
7 is a schematic view showing a manufacturing process of a mask according to an embodiment of the present invention.

For a detailed description of the present invention, which will be described later, reference is made to the accompanying drawings that illustrate, by way of example, specific embodiments in which the present invention may be practiced. These examples are described in detail enough to enable those skilled in the art to practice the present invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain shapes, structures, and properties described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in relation to one embodiment. In addition, it should be understood that the location or placement of individual components within each disclosed embodiment can be changed without departing from the spirit and scope of the invention. Therefore, the following detailed description is not intended to be taken in a limiting sense, and the scope of the present invention, if appropriately described, is limited only by the appended claims, along with all ranges equivalent to those claimed. In the drawings, similar reference numerals refer to the same or similar functions across various aspects, and length, area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to enable those skilled in the art to easily implement the present invention.

2 is a schematic diagram illustrating an OLED pixel deposition apparatus 1000 using frame-integrated masks 100 and 200 according to an embodiment of the present invention.

Referring to FIG. 2, the OLED pixel deposition apparatus 1000 includes an organic material source 600 from a magnet plate 300 in which a magnet 310 is accommodated, a coolant line 350 is disposed, and a lower portion of the magnet plate 300. It includes a deposition source supply unit 500 for supplying.

Between the magnet plate 300 and the source deposition unit 500, a target substrate 900 such as glass on which the organic source 600 is deposited may be interposed. The target substrate 900 may be disposed such that the frame-integrated masks 100 and 200 (or the FMM 100) in which the organic material source 600 is deposited for each pixel are closely or very close to each other. The magnet 310 generates a magnetic field, and the frame-integrated masks 100 and 200 (or the FMM 100) may be in close contact with the target substrate 900 by attraction by the magnetic field.

As an example, the mask 100 needs to be aligned before being in close contact with the target substrate 900. One mask or a plurality of masks may be coupled to the frame 200. The frame-integrated masks 100 and 200 may be fixedly installed in the OLED pixel deposition apparatus 1000. In the present invention, a description will be given assuming that a plurality of masks 100 having one cell (C) is combined with the frame 200 and used.

The deposition source supply unit 500 may supply the organic material source 600 while reciprocating the left and right paths, and the organic material sources 600 supplied from the deposition source supply unit 500 pass through the pattern PP formed in the FMM mask 100. Therefore, it may be deposited on one side of the target substrate 900. The deposited organic source 600 that has passed through the pattern of the FMM mask 100 can act as the pixel 700 of the OLED.

In order to prevent uneven deposition of the pixels 700 by the shadow effect, the pattern PP of the FMM mask 100 may be inclined (S) (or formed in a tapered shape (S)). . Since the organic material sources 600 passing through the pattern PP in the diagonal direction along the inclined surface may also contribute to the formation of the pixel 700, the pixel 700 may be uniformly deposited in thickness as a whole.

3 is a schematic diagram showing an electroplating apparatus 10 according to an embodiment of the present invention. Although the flat electroplating apparatus 10 is shown in FIG. 3, the present invention is not limited to the form shown in FIG. 3, and it is revealed that it can be applied to all known electroplating apparatuses, such as a flat electroplating apparatus and a continuous electroplating apparatus. Put it.

Referring to FIG. 3, the electroplating apparatus 10 according to an embodiment of the present invention includes a plating bath 11, a cathode body 20, an anode body 30, and a power supply 40 ). In addition, means for moving the cathode body 20, means for separating the plated film 100 (or metal thin plate 100) to be used as the mask 100 from the cathode body 20, and means for cutting It may further include a back (not shown).

The plating solution 12 is accommodated in the plating tank 11. The plating solution 12 is an electrolyte, and may be a material of the plating film 100 to be used as the mask 100. In one embodiment, when an Invar thin plate, which is an iron nickel alloy, is prepared as the plating film 100, a mixed solution of a solution containing Ni ions and a solution containing Fe ions may be used as the plating solution 12. In another embodiment, when a thin film of super invar, which is an iron nickel cobalt alloy, is manufactured as a plating film 100, for example, a solution containing Ni ions, a solution containing Fe ions, and a Co ion The mixed solution of the solution can also be used as the plating solution 12. In addition to this, the plating solution 12 for the desired plating film 100 can be used without limitation, and in this specification, it is assumed and described to manufacture the Invar thin plate 100 (or the Invar mask 100) as a main example.

The plating solution 12 may be supplied from an external plating solution supply means (not shown) to the plating tank 11, and a circulation pump (not shown) and a plating solution 12 for circulating the plating solution 12 in the plating tank 11 ) May be further provided with a filter (not shown) to remove impurities.

The cathode body 20 has a flat plate shape or the like on one side, and a part or all of the cathode body 20 may be immersed in the plating solution 12. Although the cathode 20 and the anode 30 are vertically arranged in FIG. 3, they may be disposed horizontally, and in this case, at least part or all of the cathode 20 in the plating solution 12 Can be immersed.

The positive electrode body 30 is spaced apart at a predetermined interval to face the negative electrode body 20, has one side corresponding to the negative electrode body 20 has a flat plate shape, etc., and the entire positive electrode body 30 in the plating solution 12 Can be immersed. The positive electrode body 30 may be made of an insoluble material such as titanium (Ti), iridium (Ir), ruthenium (Ru), or the like. The cathode body 20 and the anode body 30 may be installed at a distance of several centimeters.

The power supply unit 40 may supply current required for electroplating to the cathode 20 and the anode 30. The (-) terminal of the power supply unit 40 may be connected to the cathode body 20 and the (+) terminal to the anode body 30.

Figure 4 is a schematic diagram showing a mask (100: 100a, 100b) according to an embodiment of the present invention.

A plurality of mask patterns P may be formed on each mask 100. In FIG. 4, a stick-type mask 100a and a plate-type mask 100b including a plurality of cells C are illustrated, but the mask 100 of the present invention includes one cell ( It is preferred to include C), or a small number of cells (C). 4C is a cross-sectional side view of the mask 100.

One mask cell C may correspond to one display such as a smartphone. When the cell C is enlarged, a plurality of mask patterns P (or pixel patterns P) corresponding to R, G, and B can be confirmed. The mask patterns P may have an inclined side shape or a taper shape. A number of mask patterns (P) may form a cluster to form one cell (or display pattern).

The mask 100 may be formed by electroforming to form a thin thickness. The mask 100 may be made of an invar having a coefficient of thermal expansion of about 1.0 X 10 ^-6 / ° C, and a super invar of about 1.0 X 10 ^-7 / ° C. Since the mask 100 of this material has a very low coefficient of thermal expansion, it is less likely that the shape of the pattern (P) of the mask is deformed by thermal energy, so it can be used as a fine metal mask (FMM) and shadow mask in manufacturing high-resolution OLEDs. You can. In addition, considering that technologies for performing a pixel deposition process in a range in which the temperature change value is not large recently, the mask 100 has nickel (Ni), nickel-cobalt (Ni-Co) having a slightly higher thermal expansion coefficient than this. ). The width of the mask pattern P may be smaller than 40 μm, and the thickness of the mask 100 may be about 2 to 50 μm.

5 is a schematic diagram showing a process of forming a plated film 100 according to an embodiment of the present invention.

Referring to FIG. 5 (a), the present invention uses the conductive substrate 21 as a cathode body (or mother plate), and when forming a plating film by electroplating on the surface of the cathode body, the conductive substrate (21) is characterized in that the plating film (100: 110, 120, 130) is formed on at least a portion of the entire upper and lower surfaces and at least a portion of the lower surface.

As described above with reference to FIG. 1, since the metal thin plate 3 is formed only on the upper surface of the substrate 4 in the conventional plating process, the metal thin plate 3 is peeled off when performing heat treatment (H) ( 3 '). In order to prevent this, the present invention forms a plating film 110 on the upper surface of the conductive substrate 21, and further forms plating films 120 and 130 on the side and bottom surfaces of the conductive substrate 21, thereby plating. It can be made integral with the membrane 110. The adhesion force between the conductive substrate 21 and the upper plating film 110 may be difficult to withstand the stress applied in the heat treatment (H) process. Therefore, as the plating films 120 and 130 on the side and the bottom reinforce the adhesion between the conductive substrate 21 on the side and the bottom of the conductive substrate 21, the entire plating film 100 during the heat treatment (H) process This does not peel off, there is an advantage that can be fixed to the conductive substrate 21 well.

The conductive substrate 21 may be a conductive material. As a conductive material, in the case of metal, metal oxides may be generated on the surface, impurities may be introduced in a metal manufacturing process, and in the case of a polycrystalline silicon substrate, inclusions or grain boundaries may exist, and a conductive polymer In the case of a substrate, there is a high likelihood that impurities are contained, and strength. Acid resistance may be vulnerable. Elements that prevent the electric field from being uniformly formed on the surface of the substrate 21, such as metal oxide, impurities, inclusions, grain boundaries, etc., are referred to as “defects”. Due to the defect, a uniform electric field is not applied to the cathode body of the above-described material, so that a part of the plating film 100 may be formed non-uniformly.

In implementing ultra-high-definition pixels of UHD level or higher, non-uniformity of the mask metal film and the mask metal film pattern (mask pattern P) may adversely affect the formation of the pixel. For example, the current QHD image quality is 500 to 600 PPI (pixel per inch), and the pixel size reaches about 30 to 50㎛, and for 4K UHD and 8K UHD high image quality, higher than ~ 860 PPI and ~ 1600 PPI It has the same resolution. A micro display applied directly to a VR device, or a micro display used to be inserted into a VR device, aims to achieve an ultra-high quality of about 2,000 PPI or higher, and the pixel size reaches about 5 to 10 μm. Since the pattern width of the FMM and shadow mask applied to it can be formed to a size of several to several tens of µm, preferably less than 30 µm, even a defect of several µm in size takes up a large portion of the pattern size of the mask. to be. In addition, in order to remove defects in the cathode body of the above-described material, an additional process for removing metal oxide, impurities, etc. may be performed, and in this process, other defects such as etching of the cathode body material may be caused. have.

Therefore, the present invention can use a mother board (or cathode body) of a single crystal material. In particular, it is preferably a single crystal silicon material. To have conductivity, a high concentration doping of 10 ¹⁹ / cm ³ or more may be performed on the single crystal silicon base plate. Doping may be performed on the entire base plate, or may be performed only on the surface portion of the base plate.

On the other hand, as a single crystal material, metals such as Ti, Cu, Ag, GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge and other semiconductors, graphite (graphite), graphene (graphene), etc. _{, CH 3 NH 3 PbCl 3,} CH 3 NH 3 PbBr 3, CH 3 NH 3 PbI 3, SrTiO 3 , etc. page containing the perovskite (perovskite) superconductor single crystalline ceramic, aircraft single crystal second heat-resistant alloy for components for such structures Etc. can be used. In the case of metal and carbon-based materials, they are basically conductive materials. In the case of a semiconductor material, doping with a high concentration of 10 ¹⁹ or more may be performed to have conductivity. For other materials, conductivity may be formed by performing doping or by forming oxygen vacancy. Doping may be performed on the entire base plate, or may be performed only on the surface portion of the base plate.

In the case of a single crystal material, since there are no defects, there is an advantage in that a uniform plating film 100 can be generated due to uniform electric field formation on all surfaces during electroforming. The frame-integrated masks 100 and 200 manufactured through a uniform mask metal film may further improve the quality level of the OLED pixels. In addition, since there is no need to perform an additional process for removing and eliminating defects, there is an advantage in that the process cost is reduced and productivity is improved.

In addition, since the side surfaces and the bottom surface of the single crystal silicon material 21 have a uniform surface state without any inclusions or grain boundaries, like the top surface, the plating films formed on the side surfaces, the bottom surface, and the top surface (100: 110, 120, 130) This has the advantage of being able to adhere better to the substrate 21 without surface defects. Due to the improved adhesion, peeling and deformation in the heat treatment (H) process can be further prevented.

In addition, as the substrate 21 made of silicon is used, there is an advantage in that the insulating portion 25 can be formed only by a process of oxidizing and nitriding the surface of the substrate 21 as necessary. The insulating portion 25 serves to prevent electrodeposition of the plating film 100 to form a pattern P of the plating film 100.

Next, referring to (b) of FIG. 5, before separating the plated film 100 (or the mask 100) from the conductive substrate 21, heat treatment (H) may be performed. The present invention is characterized by performing heat treatment (H) prior to separation from the conductive substrate 21 in order to lower the thermal expansion coefficient of the mask 100 and to prevent deformation by the heat of the mask 100 and the mask pattern P at the same time. Is done. The heat treatment may be performed at a temperature of 300 ° C to 800 ° C.

Generally, the thermal expansion coefficient of the invar thin plate produced by electroforming is higher than that of the inba thin plate produced by rolling. Thus, the thermal expansion coefficient can be lowered by performing heat treatment on the thin film of Invar, but it has been described above that peeling (3 '), deformation, etc. may occur on the thin film of Invar during this heat treatment. However, since the present invention forms the plating film 100 not only on the top surface but also on the side and bottom surfaces of the conductive substrate 21, heat treatment is performed in a state where the conductive substrate 21 and the plating film 100 are closely adhered. Therefore, there is an advantage in that peeling, deformation, and the like do not occur even when heat treatment (H) is performed.

6 is a schematic view showing a process of forming a plated film 100 'according to another embodiment of the present invention. In FIG. 6, only the difference from FIG. 5 will be described.

Referring to FIG. 6 (a), the present invention uses a conductive substrate 21 having an insulating portion 25 formed thereon as a cathode body (or a mother plate), and is electroplated on the surface of the cathode body. When forming a plated film, it is characterized in that the plated films 100 ': 110, 120, and 130 are formed on at least a portion of all and bottom surfaces of the upper and side surfaces of the conductive substrate 21. In other words, the plating film 110 is formed by electroplating on the exposed surface of the conductive substrate 21 except for the portion where the insulating portion 25 is formed on the upper surface of the conductive substrate 21, and at the same time, the conductive substrate 21 ) Is characterized in that the plating films 120 and 130 are formed by electroplating on the side and bottom surfaces.

The insulating portion 25 may be formed of any one of photoresist, silicon oxide, and silicon nitride. The insulating portion 25 may form a photoresist using a printing method or the like. Alternatively, the insulating portion 25 may form silicon oxide or silicon nitride by a method such as vapor deposition on the substrate 21, and based on the substrate 21, oxidation (thermal oxidation), thermal nitriding (thermal nitritiridation) You can also use the method. The insulating portion 25 may have a thickness of about 5 μm to 20 μm so that it is thicker than the plated film 100.

The insulating portion 25 preferably has a tapered shape or a reverse tapered shape. When forming a tapered or reverse tapered pattern using a photoresist, a multiple exposure method, a method of varying exposure intensity for each region, and the like can be used.

In the area where the insulating portion 25 having the reverse taper shape is disposed in the electroplating process, the formation of the plating film 100 is prevented, and the plating film is formed on at least a portion of the exposed top, side, and bottom surfaces of the conductive substrate 21. (100 ': 110, 120, 130) may be formed.

Next, referring to (b) of FIG. 6, when the insulating portion 25 is removed, a portion of the space 26 occupied by the insulating portion 25 may be a mask pattern P.

Next, referring to (c) of FIG. 6, before separating the plating film 100 ′ (or the mask 100) from the conductive substrate 21, heat treatment (H) may be performed.

Since the embodiment of FIG. 6 performs heat treatment in a state where the conductive substrate 21 and the plating film 100 'are closely adhered, the shape of the mask pattern P formed in the space portion occupied by the insulating portion 25 is constant. It is retained, and has the advantage of preventing peeling, deformation, and the like due to heat treatment.

7 is a schematic diagram showing a manufacturing process of a mask 100 according to an embodiment of the present invention. 7 illustrates a manufacturing process of the mask 100 based on the embodiment of FIG. 5, but the embodiment of FIG. 6 may also be applied.

In FIGS. 5 and 6, it has been described above that it is possible to generate the plating films 100: 110, 120, and 130 to at least a portion of the side and bottom surfaces as well as the upper surface of the conductive substrate 21. However, in the process of generating the plating film 130 to at least a portion of the lower surface, a problem arises in that it is difficult to control the degree to which the plating solution penetrates the lower surface of the conductive substrate 21. Accordingly, the area, thickness, etc. of the plating film 130 to be electrodeposited on the lower surface of the conductive substrate 21 becomes non-uniform, and when the heat treatment (H) is performed in the state of the non-uniform plating film 100, the plating film 100 ) Has a problem in that the stress is applied to a specific part, and thus the possibility of deformation is increased.

Accordingly, the present invention is characterized in that the blocking portion 70 is disposed on one surface of the conductive substrate 21 so that the plating solution enters only the blocking portion 70 in the electroplating process. Thus, the plating film 130 plated on the lower surface of the conductive substrate 21 can be clearly formed up to the position of the blocking portion 70.

7 (a) and 7 (b) are cross-sectional and plan views of the adsorption plate 60 and the blocking portion 70 disposed on one surface of the conductive substrate 21. For convenience of description, the illustration of the adsorption plate 60 is omitted in the plan view.

The blocking portion 70 may be disposed on one surface of the conductive substrate 21. It is preferable that the blocking portion 70 is made of an elastic material so as to have airtightness on the conductive substrate 21 and not damage the conductive substrate 21. In addition, the blocking portion 70 is preferably in the shape of an empty ring inside the center so that the vacuum absorbing pressure (V) applied from the adsorption plate 60 can be transmitted to the conductive substrate 21. In consideration of this, the blocking unit 70 may use an O-ring.

The adsorption plate 60 may be further connected to the blocking portion 70. It is preferable to use an insulating material so that plating is not performed on the adsorbing plate 60. In addition, the adsorption plate 60 is preferably a flat plate shape having at least a larger area than the blocking portion 70 so that the conductive substrate 21 can be pulled with the blocking portion 70 interposed therebetween.

The suction plate 60 may be connected to an external suction pressure applying means (not shown), such as a pump. A plurality of suction holes for applying the suction pressure (V) may be formed on one surface of the suction plate 60 facing the conductive substrate 21. When the absorbing pressure V is applied to the conductive substrate 21 from the adsorbing plate 60, the conductive substrate 21 may be pulled in the direction of the adsorbing plate 60. However, since the blocking portion 70 is disposed between the adsorption plate 60 and the conductive substrate 21, the adsorption plate 60 and the conductive substrate 21 are spaced apart from each other by interposing the blocking portion 70 You can. The central interior of the blocking portion 70 is empty, and can be tightly sealed in relation to the adsorption plate 60 and the conductive substrate 21.

7 (c) and 7 (d) show that the plated films 100: 110, 120, and 130 are formed in a state where the adsorbing plate 60 and the blocking portion 70 are disposed on one surface of the conductive substrate 21. It is a sectional view and a plan view.

3 and 5, the structures of the conductive substrate 21, the adsorption plate 60, and the blocking portion 70 may be immersed in a plating solution to perform electroplating. Based on FIG. 7, the lower surface, the side surface, and the upper surface of the conductive substrate 21 are exposed to the outer circumferential portion of the blocking portion 70. An electric field is applied to this portion, and a plating solution 100 may be formed by penetrating the plating solution to the outer peripheral portion of the blocking portion 70. However, since the blocking portion 70 and the conductive substrate 21 and the adsorption plate 60 are tightly sealed, the plating solution cannot penetrate into the center of the blocking portion 70.

Therefore, the plated film 130 may be precisely formed only up to the outer circumferential portion of the blocking portion 70, and may have a uniform thickness due to the gap between the blocking portion 70 and the conductive substrate 21. In other words, the plating film 130 may be electrodeposited with a constant width (W) and thickness. Accordingly, even if the heat treatment (H) is performed in the state of the uniform plating film 100, no stress is applied to a specific portion of the plating film 100, and eventually, the thermal expansion coefficient is lowered without deformation. The film 100 can be prepared.

After manufacturing the plating film 100, the border area of the plating film 100 may be cut to separate the plating film 100 from the conductive substrate 21. For cutting, cutting means such as a knife or a laser may be used without limitation, and an etching process may be performed. After cutting, the plated film 100 may be attached on the conductive substrate 21 in a state of being separated into an inner region and an edge region. Subsequently, after cutting, only the portion of the plated film 110 may be separated and used as a mask.

On the other hand, after the plating film 100 is manufactured or after cutting, only a portion of the plating film 110 is separated, and may be used as a mask as the mask pattern P is formed by performing an etching process.

As described above, the present invention has an effect of accurately forming the plating film 100 in a desired portion with a uniform thickness since the plating film 130 is generated only up to the blocking portion 70 in the electroplating process. In addition, it is possible to manufacture the mask 100 having a low coefficient of thermal expansion (CTE) through the heat treatment (H), to prevent the peeling of the mask 100 during the heat treatment (H) process, to prevent the deformation of the mask pattern (P) It has an effect that can be prevented. In addition, since heat treatment is performed so that deformation does not occur, there is an effect that can form a fine pattern of the FMM of the OLED.

The present invention has been illustrated and described with reference to preferred embodiments, as described above, but is not limited to the above embodiments and is varied by those skilled in the art to which the present invention pertains without departing from the spirit of the present invention. Modifications and modifications are possible. Such modifications and variations are to be regarded as falling within the scope of the invention and appended claims.

10: electroplating apparatus
21: conductive substrate
25: insulation
60: adsorption plate
70: block
100: mask, plating film
200: frame
1000: 200: OLED pixel deposition device
C: cell
P: mask pattern, pixel pattern
V: suction pressure applied

Claims (15)

As a method of manufacturing a mask by electroforming,
(a) providing a conductive substrate;
(b) disposing a blocking portion on one surface of the conductive substrate; And
(c) using a conductive substrate as a cathode body, and forming a plating film on the other surface opposite to one surface of the conductive substrate by electroforming.
Including,
In the step (c), the method of manufacturing a mask, forming a plated film to the other side, side and at least one side of the conductive substrate to the blocking portion. According to claim 1,
Between step (b) and step (c), connecting the adsorbing plate on the blocking portion
The method of manufacturing a mask further comprising. According to claim 2,
The adsorption plate is a method of manufacturing a mask by applying an absorbent pressure to a conductive substrate and pulling it to the adsorption plate. According to claim 1,
The blocking part is a method of manufacturing a mask made of an elastic material. According to claim 4,
The blocking portion has an empty ring shape inside, and a plated film is formed up to the outer circumferential space of the ring. According to claim 4,
The blocking portion is an O-ring, a method of manufacturing a mask. According to claim 1,
(d) heat-treating the plating film; And
(e) separating the plated film from the conductive substrate
The method of manufacturing a mask further comprising. The method of claim 7,
The heat treatment is performed at 300 ° C to 800 ° C, a method of manufacturing a mask. The method of claim 7,
Between (d) and (e) steps, further comprising the step of cutting the border area of the plated film, the method of manufacturing a mask. The method of claim 7,
(f) forming a mask pattern on the plated film
The method of manufacturing a mask further comprising. According to claim 1,
In step (a), to form a patterned insulation on the other surface of the conductive substrate,
In step (c), a plating film is formed on the other surface except for the portion where the insulating portion is formed. According to claim 1,
The conductive substrate is a doped single crystal silicon material, a method of manufacturing a mask. The method of claim 11,
The insulating portion is a method of manufacturing a mask made of any one of photoresist, silicon oxide, and silicon nitride. The method of claim 11,
The insulating portion has a tapered shape or a reverse tapered shape. According to claim 1,
The plating film is a method of manufacturing a mask made of Invar or Super Invar material.

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