KR20200019069A - Ring type component for etching apparatus and method for etching substrate with the same - Google Patents

Abstract

The present invention relates to a ring type component for an etching apparatus, and a method for etching a substrate using the same. The ring type component for an etching apparatus comprises: a main body including a main body upper surface and a main body bottom surface separated from each other by a predetermined distance, a main body outer diameter surface which is a surface that connects an outer outline of the main body upper surface with an outer outline of the main body bottom surface, and a main body inner diameter surface connected to an inner outline of the main body upper surface and configured to surround a part or the whole of the main body; and a mounting portion which is surrounded by a mounting portion upper surface disposed at a position lower than the main body upper surface and having an outer diameter directly connected to the main body inner diameter surface, a mounting portion bottom surface disposed by a predetermined distance from the mounting portion upper surface and connected to the main body bottom surface, and a mounting portion inner diameter surface which is a surface that connects an inner outline of the mounting portion upper surface with an inner outline of the mounting portion bottom surface. The ring type component allows a stepped difference with the main body upper surface so that a substrate can be mounted on the mounting portion upper surface. According to the present invention, an etching process of a substrate can be more effectively performed by using a ring type component.

Description

Ring-type component for etching device and etching method of substrate using same {RING TYPE COMPONENT FOR ETCHING APPARATUS AND METHOD FOR ETCHING SUBSTRATE WITH THE SAME}

The present invention relates to a ring-shaped component for an etching apparatus and an etching method of a substrate using the same.

The plasma processing apparatus arranges an upper electrode and a lower electrode in a chamber, mounts a substrate such as a semiconductor wafer or a glass substrate on the lower electrode, and applies electric power between both electrodes. Electrons accelerated by an electric field between the electrodes, electrons emitted from the electrodes, or heated electrons cause ionization collision with molecules of the processing gas, thereby generating a plasma of the processing gas. Active species such as radicals or ions in the plasma perform the desired micro processing, for example etching, on the substrate surface.

In recent years, design rules in the manufacture of microelectronic devices and the like have become increasingly finer, and in particular, plasma etching is required to have higher dimensional accuracy, and thus significantly higher power is used than in the prior art. The plasma processing apparatus includes a focus ring that is affected by plasma.

As the power of the plasma device increases, the plasma distribution of the center portion is maximized on the substrate and the plasma portion of the edge portion is lowered most by the wavelength effect in which standing waves are formed and the skin effect in which the electric field is concentrated in the center portion of the electrode surface. The nonuniformity of the distribution is intensified. And, if the plasma distribution is uneven on the substrate, the plasma processing does not proceed uniformly and the quality of the manufactured microelectronic device is degraded.

The focus ring is applied to the edge of the substrate to prevent or alleviate such an imbalance, but the focus ring is also etched by the plasma, and periodic replacement is necessary according to the degree of etching. In order to replace the focus ring, it is necessary to open the chamber of the plasma equipment. The opening of the chamber and the replacement of the focus ring are one of the important reasons for lowering the manufacturing yield of the microelectronic device.

Korean Patent Publication No. 195-0015623 attempts to apply a cover ring, and Korean Patent Publication No. 2009-0101129 attempts to achieve uniformity of plasma distribution by placing a dielectric between the susceptor and the edge portion. However, the patent has a problem that the structure is complicated, and precise design between the dielectric and the edge portion is difficult.

An object of the present invention is to provide a ring-shaped component for an etching apparatus and an etching method of a substrate using the same.

In order to achieve the above object, one aspect of the present invention is a main body outer surface and the main body surface which is positioned at regular intervals, the outer surface of the main body outer surface and the outer surface of the main body bottom and the outer surface of the main body outer surface and the main body upper surface A main body connected to an inner outline of the main body and surrounded by a main body inner diameter surface surrounding a part or all of the main body; And the inner surface of the main body and its outer diameter is directly connected to the seating upper surface, which is disposed at a lower position than the main body upper surface, the seating surface and the seating surface is located at regular intervals from the seating upper surface and the seating upper surface Ring portion for the etching apparatus that allows the step and the step to allow the substrate to be seated on the top surface of the seating portion; Provide parts.

The ring-shaped part for etching apparatus includes a boron carbide sintered body in which boron carbide-containing particles are necked, or the whole thereof, and the thermal conductivity measured at 400 ° C. is 27 W / (m * k) or less.

The distance between the main body upper surface and the main body bottom may be 1.5 to 3 times based on the distance between the seating upper surface and the seating lower surface.

Ra roughness measured on the main body upper surface or the seating upper surface may be 0.1㎛ to 1.2㎛.

The porosity may be 3% or less on the main body upper surface or the seating upper surface.

The main body surface or the seating surface may be a ratio of the thermal conductivity value measured at 25 ℃ and the thermal conductivity value measured at 800 ℃ 1: 1: 0.2 to 3.

An area of a portion having a pore diameter of 10 μm or more on the main body upper surface or the seating upper surface may be 5% or less.

The ring-shaped part may not form particles in contact with fluorine ions or chlorine ions in the plasma etching apparatus.

The main body upper surface may have an etching rate of 55% or less than that of the main body upper surface made of single crystal silicon (Si).

The ring-shaped part for the etching apparatus may have a replacement time, which is a time when the height of the main body based on the upper surface of the main body is lowered to 10% or more of the initial main body height, more than twice that of the single crystal silicon.

The ring-shaped component may be a focus ring located in the chamber of the plasma processing apparatus and allowing the substrate to be seated.

Another aspect of the present invention provides an etching apparatus equipped with the ring-shaped component for etching apparatus described above as a focus ring.

The etching apparatus may be a plasma etching apparatus.

According to another aspect of the present invention, a mounting step of mounting the ring-shaped component for an etching apparatus described above as a focus ring of a plasma etching apparatus and arranging the substrate so that the substrate is positioned on the seating surface; And an etching step of operating the plasma etching apparatus to manufacture the etched substrate by etching the substrate in a predetermined pattern.

The ring-type component for an etching apparatus and the substrate etching method using the same according to the present invention utilize a ring-type component containing boron carbide having a constant thermal conductivity value, so that the etching process of the substrate can be performed more efficiently, and the replacement of the ring-type component is performed. It is possible to increase the period and improve the efficiency of the substrate etching process.

1 is a conceptual diagram illustrating the structure of a ring-shaped component according to an embodiment of the present invention.
2 is a conceptual diagram illustrating a structure of an etching apparatus to which a ring-shaped component is applied according to an embodiment of the present invention.
3 is a conceptual diagram illustrating a wire discharge machining in the process of processing the ring-shaped component of the present invention.
4 and 5 are conceptual views illustrating the sintering apparatus applied to the process of manufacturing the ring-shaped component of the present invention, respectively.
6 and 7 are conceptual views briefly explaining the structure of a molding die applied to a process of manufacturing a ring-shaped part of the present invention, respectively.
8 is an electron microscope photograph of the surface of the focus ring prepared in Example 1 of the present invention, the inserted picture is an electron microscope photograph of the granulated particles.
9 is an electron micrograph of the surface of the focus ring prepared in Comparative Example 1 of the present invention, the inserted picture is a photograph showing that the SiC deposited film formed on the substrate during the manufacturing process.
10 (a) and 10 (b) are electron micrographs of the surface of the focus ring manufactured in Example 4 and Example 7 of the present invention, respectively.
11 (a) and 11 (b) are electron micrographs of the fracture surfaces of the focus ring manufactured in Example 7 and Example 8 of the present invention, respectively.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Like parts are designated by like reference numerals throughout the specification.

Throughout this specification, the term "combination of these" included in the expression of the makushi form means one or more mixtures or combinations selected from the group consisting of constituents described in the expression of the makushi form, wherein the constituents It means to include one or more selected from the group consisting of.

Throughout this specification, terms such as “first”, “second” or “A”, “B” are used to distinguish the same terms from each other. Also, the singular forms “a”, “an” and “the” include plural forms unless the context clearly indicates otherwise.

In the present specification, the singular forms “a,” “an” and “the” are intended to be interpreted in the context of the singular or plural, unless the context describes otherwise.

Boron carbide herein refers to all compounds based on boron and carbon. In the present specification, the boron carbide may be a single phase or a complex phase, and they may be mixed. The boron carbide single phase includes both the stoichiometric phase of boron and carbon and the nonstoichiometric phase deviating from the stoichiometric composition, wherein the complex phase is at least two of the compounds based on boron and carbon It means that the dog is mixed at a predetermined ratio. In addition, the boron carbide in the present specification includes both the case where impurities are added to the single phase or the complex phase of the boron carbide to form a solid solution or inevitable addition of impurities in the process of producing boron carbide. Examples of the impurity include metals such as iron, copper, chromium, nickel, and aluminum.

1 is a conceptual diagram illustrating a structure of a ring-shaped component according to an embodiment of the present invention, Figure 2 is a conceptual diagram illustrating a structure of an etching apparatus to which a ring-shaped component is applied according to an embodiment of the present invention, Figure 3 is 4 and 5 are conceptual diagrams illustrating a sintering apparatus applied to a process of manufacturing a ring-shaped component of the present invention, respectively. FIGS. 6 and 7 Is a conceptual diagram briefly explaining the structure of a molding die applied to a process of manufacturing a ring-shaped component of the present invention, respectively. Hereinafter, referring to FIGS. 1 to 7, the ring-shaped part and a method of manufacturing the same will be described in detail.

In order to achieve the above object, the ring-shaped component 10 for an etching apparatus according to an embodiment of the present invention is a ring-shaped body 100 and the seating portion 200 which is located in direct contact with the main body 100 adjacent to It includes. The main body 100 and the seating part 200 may be integrally formed.

The ring-shaped part 10 is a body outer diameter surface 102 which is a surface connecting a main body upper surface 106 and a main body bottom positioned at predetermined intervals, an outer outline of the main body upper surface 106 and an outer outline of the main body bottom surface to each other. And a main body 100 connected to the inner outline of the main body upper surface 106 and surrounded by a main body inner diameter surface 104 surrounding a part or all of the main body 100. The main body inner diameter surface 104 and the outer diameter thereof are directly connected to each other, and a seating upper surface 206 formed at a lower position than the main body upper surface 106 and the seating upper surface 206 are positioned at a predetermined interval. And a seating portion 200 surrounded by a seating portion inner surface 204 which is a surface connecting the inner bottom of the seating bottom surface and the seating top surface 206 and the inner edge of the seating bottom surface connected to the body bottom. A step is allowed to allow the substrate 1 to be seated on the seating top surface 206.

The ring-shaped part for etching apparatus includes a boron carbide sintered body in which boron carbide-containing particles are necked, on its surface or in its entirety.

The ring-shaped component 10 may have a ring shape and may be a consumable component applied in a semiconductor device manufacturing process such as plasma etching. For example, a focus ring, an edge ring, and a confinement ring may be used. ) And the like. Specifically, the ring-shaped component 10 may be a focus ring on which a substrate or the like is seated in a process of plasma etching.

Such consumable ring-shaped parts help relatively uniform plasma etching as intended throughout the substrate to be etched during the plasma etching process. However, when the substrate is etched during the plasma etching process, the surface of the ring-shaped part is also etched, and since the etching process of a large amount of substrates without an open chamber is efficient, a ring-type part that is etched slower than the substrate is applied. Good to do. It is also desirable to have a resistance value intended so that the plasma can be formed on the substrate in the intended direction and speed.

The ring-shaped component for etching apparatus of the present invention has a feature that the thermal conductivity measured at 400 ° C. is 27 W / (m * k) or less. Specifically, the boron carbide sintered body disposed on the surface or the entirety of the ring-shaped component for etching may have a thermal conductivity value of 27 W / (m * k) or less measured at 400 ° C. The ring-shaped component having such a feature may be characterized by a considerably low diameter and porosity of the pores and relatively excellent etching resistance.

In addition, the ring-shaped component for etching apparatus has a value within a predetermined range of the ratio of the thermal conductivity measured at 25 ℃ and 800 ℃, specifically the thermal conductivity of the boron carbide sintered body measured at 25 ℃ and 800 ℃ The ratio of the degree values has a value within a certain range described below. A ring-shaped component having such a feature may be relatively easy to control thermal characteristics during plasma etching, and may have sufficiently strong etching resistance.

The thermal conductivity value of the ring-shaped component 10 is based on the thermal conductivity values of the main body upper surface 106 and the seating upper surface 206.

The ring-like part 10 has a thermal conductivity value measured at a 25 ℃ measured at the surface or the whole (HC ₂₅₎ and the ratio of the thermal conductivity value (HC ₈₀₀₎ was measured at _{800 ℃ (HC 800 / HC 25} ) 1 It may have a characteristic of 0.2 to 3. Specifically, the ratio (HC ₈₀₀ / HC ₂₅ ) may be 1: 0.26 to 1, 1: 1: may be 0.26 to 0.6.

The thermal conductivity of the ring-shaped component 10 may be about 60 W / (m * k) or less at 25 to 800 ° C., and about 4 W / (m * K) to about 40W / (m * K). Also, in more detail, it may be about 4W / (m * K) to about 27W / (m * K).

The thermal conductivity of the ring-shaped part 10 may be about 22 to about 80 W / (m * K) at 25 ° C., and may be about 22 to about 31 W / (m * K).

The thermal conductivity of the ring-shaped component 10 may be about 7 to about 70 W / (m * K) at 400 ° C., and may be about 8 to about 22 W / (m * K).

The thermal conductivity of the ring-shaped component 10 may be about 5 to about 50 W / (m * K), and about 6 to about 16 W / (m * K) at 800 ℃.

The ring-shaped component 10 may have a higher relative density. Specifically, the ring-shaped component 10 may have a relative density of about 90% or more, about 97% or more, about 97 to about 99.99%, and about 98 to about 99.99%.

The relative density of the ring-shaped component 10 is the boron carbide sintered body when the entire ring-shaped component 10 is made of boron carbide sintered body when the boron carbide sintered body is located on the surface of the ring-shaped component 10. It is based on the relative density of the surface in which is located, for example, the main body upper surface 106. The same criteria apply to the porosity, pore diameter, resistance, particle formation, and the like.

The ring-shaped component 10 may have a porosity of about 10% or less, about 3% or less, about 2% or less, or 0.01 to 2%.

Specifically, the porosity of the ring-shaped component 10 may be about 1% or less, about 0.5% or less, and about 0.1% or less. The ring-shaped component having a low porosity may have a feature such that the sintered body contained therein is less formed in the carbon region between the particles and the like, and may have stronger etching resistance.

The average diameter of the pores observed on the surface or cross section of the ring-shaped component 10 may be 5㎛ or less. At this time, the average diameter of the pores is derived as the diameter of the circle of the same area as the cross-sectional area of the pores. The average diameter of the pores may be 3㎛ or less. In more detail, the average diameter of the pores may be 1 μm or less. In addition, based on the total area of the pores, the area of the pore diameter of 10㎛ or more may be 5% or less. The boron carbide sintered body included in the ring-shaped part 10 may have improved etching resistance.

The boron carbide sintered body included in the ring-shaped part 10 may have high resistance, medium resistance, or low resistance.

Specifically, the boron carbide sintered body having a high resistance characteristic may have a specific resistance of about 10 Ω · cm to about 10 ³ Ω · cm. In this case, the high-resistance boron carbide sintered body is mainly formed of boron carbide, and may include silicon carbide or silicon nitride as a sintering characteristics improving agent.

Specifically, the boron carbide sintered body having a medium resistance characteristic may have a specific resistance of about 1 Ω · cm to less than 10 Ω · cm. In this case, the medium resistance boron carbide sintered body is mainly formed of boron carbide, it may include boron nitride as a sintering characteristics improving agent.

Specifically, the boron carbide sintered body having low resistance characteristics may have a specific resistance of about 10 ⁻¹ Ω · cm to about 10 ⁻² Ω · cm. In this case, the low-resistance boron carbide sintered body is mainly formed of silicon carbide, and may include carbon as a sintering characteristic improving agent.

More specifically, the ring-shaped component 10 may have a low resistance characteristic of 5.0 Ω · cm or less, may have a low resistance characteristic of 1.0 Ω · cm or less, and low 8 × 10 ⁻¹ Ω · cm or less It may have a resistance characteristic.

The ring-shaped part 10 may not form particles even when contacted with halogen ions in the plasma etching apparatus. In this case, the particle means a particulate material having a diameter of 1 μm or more.

The ring-shaped component 10 is disposed around the substrate such as the substrate 1 is seated in the etching apparatus 500 and is affected by the plasma etching applied to the substrate. In this case, elements exposed to the surface of the ring-shaped component 10 by the influence of plasma or halogen ions from the surface or the entirety of the ring-shaped component 10 are ionized and combined with ionized atmospheric elements in the chamber to form an unintended material. Can be. When the material is in the gas phase, the material is discharged out of the chamber housing 510 through the duct 540, and thus does not significantly affect the etching process of the substrate. It may cause a defect of the device.

The ring-shaped part 10 may not form particles by reacting with fluorine or chlorine ions in a plasma state. In particular, the boron carbide constituting the surface or the entirety of the ring-shaped component 10 is etched by plasma or the like, and does not form solid particles even when reacted with fluorine ions or chlorine ions. The above characteristics are distinguished from the fact that the sintered body to which iridium or the like is applied can react with halogen ions to form particulate foreign matter. The characteristic of the ring-shaped component 10 is a product defect rate such as a substrate etched in an etching apparatus. This is one of the features that can significantly reduce.

The ring-shaped part 10 has a low etch rate characteristic, and particularly has a low corrosion rate corrosion resistance for plasma etching.

Specifically, when the etching rate of silicon (Si, single crystal silicon, manufactured by the drawing method) is 100%, the ring-shaped part 10 may have an etching rate of 55% or less, and have an etching rate of 10 to 50%. It may have an etching rate of 20 to 45%.

This etching rate characteristic is evaluated by measuring the thickness reduction rate (%), and the degree of etching the surface (main body surface) of the ring-shaped part of the same size under the same conditions of applying RF power of 2,000W and exposure time of 280 hr in plasma equipment. Is the result of comparative evaluation.

The low etch rate characteristic of the ring-shaped component 10 is superior to that of CVD-SiC, resulting in a significantly better etch rate than CVD-SiC.

The ring-shaped component 10 may have an etching rate of 70% or less when the etching rate of CVD-SiC is 100%.

The Ra roughness on the surface of the ring-shaped component 10, in particular, the upper surface of the body 106, may be about 0.1 μm to about 1.2 μm. The Ra roughness on the surface of the ring-shaped component 10, in particular, the upper surface of the main body 106 may be about 0.2 μm to about 0.4 μm. The 3D measuring instrument may be used to measure the illuminance.

The boron carbide sintered body located on the surface or the entirety of the ring-shaped part 10 may contain 100 ppm or less of metallic by-products (impurities), 10 ppm or less, and 1 ppm or less.

The boron carbide sintered body located on the surface or the entirety of the ring-shaped part 10 may be sintered and necked boron carbide-containing particles having a particle size (D ₅₀ ) of 1.5 μm or less, and specifically, based on D ₅₀ , about 0.3 μm to The boron carbide-containing particles having an average particle diameter of about 1.5 μm may be sintered and necked, and the boron carbide-containing particles having an average particle diameter of about 0.4 μm to about 1.0 μm may be sintered and necked. In addition, the boron carbide sintered body may be a sintered and necked boron carbide-containing particles having an average particle diameter of about 0.4㎛ to about 0.8㎛ based on D ₅₀ . When necking boron carbide particles having an average particle diameter too large, the density of the manufactured sintered compact may be low, and when necking particles having too small particle diameters, workability may be lowered or productivity may be lowered.

The distance between the main body upper surface 106 and the main body bottom may be 1.5 to 3 times and 1.5 to 2.5 times based on the distance between the seating upper surface 106 and the seating bottom surface. In this case, the substrate can be settled more stably and help the efficient etching process operation.

The distance between the main body upper surface 106 and the main body bottom may be 0.5 to 5, 100 to 0.5, based on the outer diameter of the ring-shaped component 10, 0.5 to 3, 0.5 to 2.5 It may be. In the case of applying the ring-shaped component 10 having such a thickness to diameter, the substrate may be more stably seated and may help in an efficient etching process operation.

The ring-shaped part 10 may have a replacement time, which is a time when the main body upper surface 106 is etched so that the height is lowered to 10% or more of the initial main body height, more than twice the single crystal silicon. The slow etching of the main body upper surface 106 of the ring-shaped component 10 means that the interval for opening the chamber for the replacement of components is long, and thus the etching efficiency of the etching apparatus is improved. In addition, it can reduce the possibility of the release of toxic substances that can occur during the chamber opening process, and also can reduce the possibility of contamination in the chamber.

The manufacturing method of the said ring-shaped part 10 is demonstrated.

The ring-shaped part 10 may be manufactured to produce a boron carbide sintered body having a ring shape, and to have an outer shape of the corrosion-resistant ring-shaped part 10 described above by performing a final product processing on the sintered body. However, since the boron carbide material is a material having a strong covalent bond, its processing is difficult, and thus, the finished product may be manufactured by processing by a special method such as wire discharge processing or surface discharge processing.

Specifically, the manufacturing method of the ring-shaped component 10 includes a primary molding step and a sintered body forming step. The manufacturing method may further include a granulation step before the first molding step. The manufacturing method may further include a processing step after the sintered body forming step.

In the granulation step, a slurrying process of preparing a slurryed raw material by mixing a raw material containing boron carbide with a solvent, and granulation of drying the slurryed raw material into a spherical granular raw material Process.

The raw material may be a raw material including boron carbide and a sintering property improving agent.

The boron carbide (boron carbide, boron carbide) is represented by B ₄ C, the boron carbide of the raw material may be applied to the powdered boron carbide. The boron carbide powder may be applied with high purity (boron carbide content of 99.9% by weight or more), and low purity (boron carbide content of 95% by weight or more and less than 99.9% by weight) may be applied.

The boron carbide powder may have an average particle diameter of about 1.5 μm or less, an average particle diameter of about 0.3 μm to about 1.5 μm, and an average particle diameter of about 0.4 μm to about 1.0 μm on the basis of D ₅₀ . have. In addition, the boron carbide powder may have an average particle diameter of about 0.4 μm to about 0.8 μm based on D ₅₀ . When the boron carbide powder having an average particle diameter is too large, the density of the manufactured sintered compact may be lowered and corrosion resistance may be lowered. If the particle diameter is too small, workability may be lowered or productivity may be lowered.

The sintering characteristic improving agent is included in the raw material to improve physical properties of the boron carbide sintered body. Specifically, the sintering property improving agent may be any one selected from the group consisting of carbon, boron oxide, silicon, silicon carbide, silicon oxide, boron nitride, boron nitride, silicon nitride and combinations thereof.

The sintering characteristics improving agent may be contained in about 30% by weight or less based on the entire raw material. Specifically, the sintering property improving agent may be contained in about 0.001% by weight to about 30% by weight, may be contained in 0.1 to 25% by weight, and may be contained in 5 to 25% by weight based on the entire raw material. have. When the sintering characteristics improving agent is included in more than 30% by weight may rather lower the strength of the sintered body.

The raw material may include a boron carbide raw material such as boron carbide powder in the remaining amount other than the sintering characteristic improving agent. The sintering property improving agent may include boron oxide, carbon, and combinations thereof.

When carbon is applied as the sintering property improving agent, the carbon may be added in the form of a resin such as a phenol resin, and the resin may be applied as carbon in a carbonized form through a carbonization process. In the carbonization process of the resin, a process of carbonizing a polymer resin may be generally applied.

When carbon is applied as the sintering property improving agent, the carbon may be applied in an amount of 1 to 30% by weight, 5 to 30% by weight, 8 to 28% by weight, and 13 to 23% by weight. Can be applied. When carbon is used as the sintering property improving agent in such a content, a necking phenomenon between particles increases, a particle size is relatively large, and a boron carbide sintered body having a relatively high relative density can be obtained. However, when the carbon is included in more than 30% by weight, the degree can be reduced by the generation of the carbon region by the residual carbon.

The sintered properties improving agent may be applied to boron oxide. The boron oxide is represented by B ₂ O ₃ , by applying the boron oxide to produce boron carbide through a chemical reaction with the carbon present in the pores of the sintered body, and help the discharge of residual carbon more compacted sintered body Can provide

When the boron oxide and the carbon are applied together as the sintering property improving agent, the relative density of the sintered body can be further increased, which can reduce the area of carbon present in the pores and can produce a sintered body having higher density.

The boron oxide and the carbon may be applied in a weight ratio of 1: 0.8 to 4, 1: may be applied in a weight ratio of 1.2 to 3, 1: 1: may be applied in a weight ratio of 1.5 to 2.5. In this case, a sintered body having an improved relative density can be obtained. More specifically, the raw material may contain 1 to 9% by weight of the boron oxide and 5 to 15% by weight of carbon. In this case, the sintered compact may have a considerably superior density and less defects. .

In addition, the sintering characteristics improving agent may have a melting point of about 100 ℃ to about 1000 ℃. In more detail, the melting point of the additive may be from about 150 ° C to about 800 ° C. The melting point of the additive may be about 200 ° C to about 400 ° C. Accordingly, the additive may be easily diffused between the boron carbide in the process of sintering the raw material.

The solvent applied for slurrying in the granulation step may be alcohol or water, such as ethanol. The solvent may be applied in an amount of about 60% by volume to about 80% by volume based on the entirety of the slurry.

The slurrying process may be a ball mill method. In the ball mill method, specifically, a polymer ball may be applied, and the slurry blending process may be performed for about 5 hours to about 20 hours.

In addition, the granulation process may be performed in such a way that the raw material is granulated while the slurry is sprayed and the solvent contained in the slurry is removed by evaporation. The granulated raw material particles thus prepared are characterized in that the particles themselves have a round shape and a relatively constant particle size.

The raw material particles may have a diameter of about 0.3 to about 1.5 μm, about 0.4 μm to about 1.0 μm, and about 0.4 μm to about 0.8 μm based on D ₅₀ .

When the granulated raw material particles are applied, the mold may be easily filled in the green body during the first molding step to be described later, and workability may be further improved.

The first molding step is a step of forming a green body by molding a raw material containing boron carbide. Specifically, the molding may be applied to press the raw material into a mold (rubber, etc.). More specifically, the forming may be cold isostatic pressing (Cold Isostatic Pressing, CIP) may be applied.

When the first molding step is performed by applying cold isostatic pressing, it is more efficient to apply the pressure at about 100 MPa to about 200 MPa.

The green body may be manufactured in consideration of the size and shape suitable for the use of the sintered body is manufactured.

The green body, it is preferable to form a size slightly larger than the size of the final sintered body to be manufactured, since the strength of the sintered body is stronger than the strength of the green body, the green body after the first molding step for the purpose of reducing the processing time of the sintered body Form processing to remove unnecessary parts from the body can be further proceeded.

The sintered body forming step is a step of producing a boron carbide sintered body by carbonizing and sintering the green body.

The carbonization may be performed at a temperature of about 600 ° C. to about 900 ° C., and in this process, binders or unnecessary foreign substances in the green body may be removed.

The sintering may be performed in such a manner as to maintain the sintering time of about 10 hours to about 20 hours at a sintering temperature of about 1800 ° C to about 2500 ° C. In this sintering process, the growth and necking between the particles of the raw material proceed and a densified sintered compact can be obtained.

Specifically, the sintering may be performed in a temperature profile of temperature raising, maintaining, and cooling, and specifically, the temperature of the first elevated temperature-first temperature maintenance-secondary temperature-second temperature-maintenance-secondary temperature--3rd temperature maintenance-cooling You can proceed to the profile.

The temperature increase rate in the sintering may be about 1 ° C / min to about 10 ° C / min. More specifically, the rate of temperature increase in the sintering can be from about 2 ° C / min to about 5 ° C / min.

In the sintering, a temperature of about 100 ° C. to about 250 ° C. may be maintained for about 20 minutes to about 40 minutes. In addition, the temperature range of about 250 ℃ to about 350 ℃ in the sintering may be maintained for about 4 hours to about 8 hours. In addition, the temperature range of about 360 ℃ to about 500 ℃ in the sintering may be maintained for about 4 hours to about 8 hours. When maintained for a predetermined time in the above temperature range, the additive can be more easily diffused, it is possible to produce a more uniform phase boron carbide sintered body.

The sintering may be maintained at a temperature section of about 1800 ℃ to about 2500 ℃ about 10 hours to about 20 hours. In this case, a more robust sintered body can be produced.

The cooling rate in the sintering may be about 1 ° C / min to about 10 ° C / min. More specifically, the cooling rate in the sintering may be about 2 ° C / min to about 5 ° C / min.

The boron carbide sintered body manufactured in the sintered body forming step may additionally undergo a processing step including surface processing and / or shape processing.

The surface processing is an operation to planarize the surface of the sintered body, and a method generally applied to planarizing a ceramic may be applied.

The shape processing is a process of removing or scraping a portion of the sintered compact to have an intended shape. The shape processing may be performed by the discharge machining method, in consideration of the fact that the boron carbide sintered body has excellent density and strong strength, and specifically, may be performed by the discharge wire processing method.

Specifically, the sintered body 480 is placed in the processing solution 416 located in the processing unit housing 410 of the wire discharge processing apparatus 400 shown in FIG. 3, and is connected to the wire electrode 430 formed of copper or the like. The wire moving part 420 is connected to the power source 440. When power is applied from the power source 440 connected to the sintered body 480 and the wire moving part 420, a portion of the sintered body 480 is removed in a predetermined shape while the wire is reciprocated by the wire moving part 420. Can be cut. The power applied by the power source 440 may be a DC power source, a voltage may be about 100 volts to about 120 volts, and a processing speed may be about 2 mm / minute to about 7 mm / minute. In addition, the wire speed during processing may be about 10rpm to about 15rpm, the tension of the wire may be about 8g to about 13g, the diameter of the wire may be about 0.1mm to about 0.5mm.

The ring-shaped component 10 thus processed may be further subjected to surface processing such as polishing.

Another manufacturing method of the ring-shaped component 10 will be described.

The manufacturing method includes a preparation step, a batch step and a molding step.

The preparation step is to charge the raw material containing boron carbide into the ring-shaped hollow 19 located in the molding die 700.

The ring-shaped hollow 19 may be located adjacent to each other and may include a body hollow 190 and a seating hole 290 having a step that is separated from each other. The height of the body hollow 190 may be higher than the height of the seating hole 290. The ring-shaped hollow 19 will be described in more detail in the description for the forming die 700.

The boron carbide (boron carbide, boron carbide) is represented by B ₄ C, the boron carbide of the raw material may be applied to the powdered boron carbide.

The raw material may contain boron carbide powder, may contain boron carbide powder and additives, and may be made of boron carbide powder. The boron carbide powder may be applied with high purity (boron carbide content of 99.9% by weight or more), and low purity (boron carbide content of 95% by weight or more) may be applied.

The boron carbide powder may have an average particle diameter of about 1.5 μm or less, an average particle diameter of about 0.3 μm to about 1.5 μm, and an average particle diameter of about 0.4 μm to about 1.0 μm on the basis of D50. . In addition, the boron carbide powder may have an average particle diameter of about 0.4 μm to about 0.8 μm based on D50. When the boron carbide powder is applied, a boron carbide sintered compact body having less pore formation can be produced.

The additive may be a mechanical additive that forms a boron carbide solid solution in part or all of the boron carbide sintered body to impart functionality to the boron carbide sintered body.

The additive may be a sintering characteristic improving agent applied for the purpose of improving the sintering characteristics of the boron carbide sintered body. The sintering property improving agent may be any one selected from the group consisting of carbon, boron oxide, silicon, silicon carbide, silicon oxide, boron nitride, boron nitride, silicon nitride, and combinations thereof. The sintering property improving agent may include boron oxide, carbon, and combinations thereof. When carbon is applied as the sintering property improving agent, the carbon may be added in the form of a resin, and the resin may be applied to the carbon in the carbonized form through a carbonization process. In the carbonization process of the resin, a process of carbonizing a polymer resin may be generally applied.

The sintering property improving agent may be contained in about 30% by weight or less based on the entire raw material, may be contained in about 0.1% to about 30% by weight, may be contained in 1 to 25% by weight, 5 To 25% by weight. When the sintering characteristics improving agent is included in more than 30% by weight may rather lower the strength of the sintered body.

The molding dies 700, 330, and 620 may be formed by combining two or more divided pieces with each other. Specific forms and roles of the molding dies 700, 330, and 620 will be described separately below.

The boron carbide sintered body may be located in the ring-shaped hollow 19 after the raw material or the manufacturing method is performed.

The preparation step includes introducing the raw materials 380 and 680 into a die housing 720 including a die bottom portion 710 and a die outer portion 715 surrounding a space on the die bottom portion 710. Raw material introduction process; And a die bonding process of coupling the die upper surface portion 730 from an upper side to an inner surface of the die housing 720 into which the raw material is introduced.

Some or all of the die upper surface portion 730 may be moved up and down based on the die housing 720. Thus, the die upper surface portion 730 can be moved up and down, the pressure is transferred to the raw material well when pressed by the pressing portion (322, 324, 622, 624) in the sintering apparatus (300, 600) more dense structure The sintered compact which has can be manufactured.

The preparation step may include a first batch process of disposing an inner diameter upper surface portion 738 in a die housing 720 including a die bottom surface portion 710 and a die outer surface portion 715 surrounding a space on the die bottom surface portion; A raw material introduction process of placing the raw material in the ring-shaped hollow 19 of the die housing 720 in which the inner diameter upper surface portion 738 is disposed; And a secondary batch process of placing the i) main body seating surface portion 736 or ii) the seating surface portion 736 and the body upper surface portion 732 on the raw material.

At this time, i) the main body mounting upper surface portion 736 or ii) the seating upper surface portion 736 and the main body upper surface portion 732 may be moved up and down relative to the die housing 720. In this case, the pressure is well transmitted to the raw material during pressurization by the press units 322, 324, 622, and 624 in the sintering apparatuses 300 and 600, so that a sintered compact having a more dense structure may be manufactured.

The method of manufacturing the boron carbide sintered body may be made of a material such as graphite having a high temperature comparative strength with the molding die so that a strong sintering pressure may be applied, and a reinforcing part for reinforcing the molding die may be applied as necessary.

The reinforcing portion (not shown) serves to prevent the molding die 700 from being damaged by the force transmitted by the pressing portion 322, 324, 622, 624 is transmitted to the die outer surface portion 715, It may be an additional reinforcing housing (not shown) surrounding the die outer surface portion 715 or the die housing 720.

When the reinforcing part is damaged by the pressure applied during the sintering process, it is very likely that the sintered body does not have the intended shape or does not have the intended physical properties (strength, relative density, etc.). It acts as a blocker.

In the disposing step, the molding dies 700, 330, and 620 are charged into the sintering furnace 310 or the chamber 630 and the pressurizing parts 322, 324, 622, and 624 are set.

The sintering furnace or chamber applied in the batching step may be applied without limitation as long as it is a device capable of manufacturing the boron carbide sintered body in a high temperature pressurized atmosphere. In the present invention, the sintering furnace 310 or the chamber 630 in the sintering apparatus shown in FIGS. 4 and 5 are illustrated.

The molding step is a step of forming a boron carbide sintered body from the raw material by applying a sintering temperature and a sintering pressure to the molding die (700, 330, 620).

The molding dies 700, 330, and 620 may be manufactured to have a form of a finished product by forming hollows in advance in a shape to be manufactured by the boron carbide sintered body of the present invention, as described later.

The sintering temperature may be about 1800 to about 2500 ℃, may be about 1800 to about 2200 ℃. The sintering pressure may be about 10 to about 110 MPa, about 15 to about 60 MPa, may be about 17 to about 30 MPa. When the molding step is performed under such sintering temperature and sintering pressure, a high-quality boron carbide sintered body and a ring-shaped component containing the same can be produced more efficiently.

The sintering time may be applied 0.5 to 10 hours, 0.5 to 7 hours may be applied, 0.5 to 4 hours may be applied.

The sintering time is a considerably shorter time compared to the sintering process which proceeds at normal pressure, and even when such a short time is applied, a sintered body having an equal or better quality can be produced.

The molding step may be carried out in a reducing atmosphere. When the forming step is carried out in a reducing atmosphere, the boron carbide powder may be reduced by reducing materials such as boron oxide that may be formed by reacting with oxygen in the air to produce a boron carbide sintered body having a higher boron carbide content.

The forming step may be performed while generating a spark in the gap between the particles in the sintering furnace 600. In this case, the molding die 620 may proceed in a manner of applying electrical energy in pulses to the molding die 620 by the electrodes 612 and 614 connected to the pressing units 622 and 624. In this case, when the forming step is performed while applying the electrical energy of the pulse, the dense sintered body can be obtained in a shorter time by the electrical energy.

Specifically, in the case where the molding step is performed in the sintering apparatus 300 (heat pressurizing and sintering apparatus) shown in FIG. When the die 330 is charged in a state in which the raw material 380 is located, the heating is performed by the heating unit 320, and the sintering may be performed by pressing or separately. At this time, the sintering furnace 310 may be controlled in a reduced pressure atmosphere, it may be carried out in a reducing atmosphere. For example, a carbon die may be applied to the molding die 330, and a carbon tool (punch) may be used as the upper pressurizing part 332 and the lower pressurizing part 334. In the case of manufacturing the boron carbide sintered body by applying the sintering apparatus 300, a part of a separate molding process such as wire discharge machining and surface discharge machining may be omitted.

The maximum temperature section of the sintering temperature in the molding step may be about 1900 ℃ to about 2200 ℃, it may be maintained for about 2 hours to about 5 hours. In this case, the pressure applied to the molding die 330 may be about 15 MPa to about 60 MPa. In more detail, the pressure applied to the molding die 330 may be about 17 MPa to about 30 MPa.

Specifically, when the forming step is performed in the sintering apparatus 600 (spark plasma sintering apparatus) shown in Figure 5, located between the first pressing unit 622 and the second pressing unit 624 in the chamber 630. When the molding die 620 is charged in a state in which the raw material 680 is positioned, the temperature rise in the chamber may be performed by a heating unit (not shown), and the pressurization may be performed together with or separately to perform sintering. At this time, the electrical energy applied from the power supply unit 610 to the first electrode 612 and the second electrode 614 in the chamber 630 promotes sintering of the raw material, for example, the power supply unit 610. ) Can apply a DC pulse current.

For example, a carbon die may be applied to the molding die 620, and an electrically conductive punch may be applied to the first pressing part 622 and the second pressing part 624. When the boron carbide sintered body is manufactured by applying the sintering apparatus 600, a separate molding process such as wire discharge machining or surface discharge machining may be omitted.

The maximum temperature section of the sintering temperature in the molding step may be about 1800 ℃ to about 2200 ℃, it may be maintained for about 2 hours to about 5 hours. In this case, the pressure applied to the molding die 620 may be about 50MPa to about 80MPa. In more detail, the pressure applied to the molding die 620 may be about 55 MPa to about 70 MPa.

Forming die 700 is coupled to the die housing 720 and the die housing 720 including a die bottom portion 710 and a die outer portion 715 surrounding a space on the die bottom portion 710. And a die upper surface portion 730 for forming a ring-shaped hollow 19 which is a space formed between the inner surface of the die housing 720.

In this case, the die housing 720 may be an integrated die housing in which the die bottom portion 710 and the die outer surface portion 715 are integrally formed. In addition, the die housing 720 may be a divided die housing formed so that the die bottom portion 710 and the die outer surface portion 715 may be separated or combined.

The molding die 700 is applied as a molding die 700 having a ring-shaped hollow having the shape and shape of the finished product to be manufactured in the method of manufacturing the boron carbide sintered body described above, thereby efficiently Helps to manufacture. That is, the molding die may be applied for the boron carbide sintered body, specifically, for the production of the boron carbide ring-shaped sintered body, and more particularly for the production of the boron carbide focus ring.

Each of the parts constituting the molding die 700 may be made of a material capable of withstanding high temperature and high pressure, for example, made of graphite, and made of a graphite compounding material.

The ring-shaped hollow 19 located in the forming die 700 may include a body hollow 190 and a seating portion hollow 290 positioned next to each other and having a step difference. The body hollow 190 and the seating hole 290 correspond to the body 100 and the seating part 200 of the corrosion-resistant ring-shaped part 10 described above. The step means a jaw that can be stably seated when the substrate 1 or the like is disposed on the ring-shaped part 10, and has a predetermined step so that the height of the body hollow 190 is greater than the seating part hollow ( 290 is preferably formed higher than the height.

The die upper surface portion 730 may include a body upper surface portion 732 positioned on the body hollow 190; And a first surface positioned in contact with an inner circumferential surface of the main body upper surface portion 732 and having a first surface positioned on the seating hole 290 and protruding from the first surface with a stepped first step. It may include; main body outer surface portion 734 including.

The die upper surface portion 730 may include a body upper surface portion 732 positioned on the body hollow 190; A seating upper surface portion 736 positioned in contact with the inner circumferential surface of the main body upper surface portion 732 and positioned on the seating hole 290 and having a thickness greater than that of the main body upper surface portion 732; And an inner diameter upper surface portion 738 positioned in contact with the inner circumferential surface of the seating upper surface portion 736 and having a thickness greater than that of the seating upper surface portion 736.

The die upper surface portion 730 is located on the ring-shaped hollow 19, the body seating upper surface portion 736 forming the upper surface of each of the body hollow 190 and the seating hole 290 different in height; And an inner diameter upper surface portion 738 positioned in contact with the inner circumferential surface of the main body mounting upper surface portion 736 and having a thickness greater than that of the main body mounting upper surface portion 736.

As described above, the die top surface portion 730 is formed of one piece, two pieces, three pieces, etc., and is convenient to charge the raw material in powder form, and the pressure applied to the pieces is reduced. Can be delivered substantially evenly.

By applying the above production method, the boron carbide-containing corrosion-resistant ring-shaped part 10 having a shape substantially the same as that of the finished product can be manufactured by directly introducing the powdered raw material into the molding die and sintering, thereby producing a manufacturing process. The boron carbide-containing corrosion-resistant ring-shaped part 10 can be manufactured more simply and efficiently.

In addition to the advantages of simplifying the process, the boron carbide sintered body is also superior in physical properties.

Another manufacturing method of the ring-shaped component 10 will be described.

The ring-shaped component 10 may be manufactured by a deposition process. For example, the vapor deposition bulk can manufacture the surface or all of the ring-shaped component 10 by vapor deposition such as CVD. Specifically, when the ring-shaped component 10 is applied by a CVD method (CVD vapor deposition bulk production method), the ring-shaped component 10 is CVD boron carbide (BC) deposition, substrate removal, shape processing, polishing, measurement and It can be prepared including the process of washing.

The CVD boron carbide deposition process is a process of forming a boron carbide deposited film on a substrate (mainly graphite). The substrate may be removed after the deposition has proceeded sufficiently in such a way that the gaseous material is physically deposited onto the substrate.

The shape machining process is a process of completing the shape of the ring-shaped part 10 by mechanical machining. Polishing is the process of smoothing the surface finish and then checking the quality and removing contaminants. Some of the above processes may be omitted or other processes may be added within the scope of the present invention.

In the CVD process, boron source gas and carbon source gas may be used as the gaseous material. The boron source gas applied to the CVD process may contain any one selected from the group consisting of B ₂ H ₆ , BCl ₃ , BF _3, and a combination thereof. In addition, the carbon source gas used in the CVD process may contain CF ₄ .

For example, the boron carbide sintered body applied to the ring-shaped component may be deposited using a chemical vapor deposition apparatus using a B ₂ H ₆ as a boron precursor and a deposition temperature of 500 to 1500 ° C.

In order to form the ring-shaped component 10, various deposition or coating processes may be applied. The method of coating the boron carbide coating layer with a thick film is not limited, and there are physical vapor deposition, room temperature spraying, low temperature spraying, aerosol spraying, plasma spraying, and the like.

In the physical vapor deposition method, for example, a boron carbide target may be sputtered in an argon (Ar) gas atmosphere. The coating layer formed by the physical vapor deposition method may be referred to as a thick PVD boron carbide coating layer.

In the room temperature spraying method, a boron carbide sintered body layer may be formed by applying pressure to the boron carbide powder at room temperature and spraying the base material through a plurality of discharge ports. In this case, the boron carbide powder may use a vacuum granule form. In the low temperature spraying method, at a temperature higher than about 60 ° C. from room temperature, the boron carbide powder may be sprayed onto the base material through a plurality of discharge ports by the flow of compressed gas to form the boron carbide sintered body in the form of a coating layer. The aerosol injection method is to form aerosol by mixing the boron carbide powder in a volatile solvent such as polyethylene glycol, isopropyl alcohol and the like, and then to form a boron carbide sintered body by spraying the aerosol to the base material. In the plasma spraying method, boron carbide powder is injected into a high temperature plasma jet to spray the powder melted in the plasma jet on a substrate at a high speed to form a boron carbide sintered body.

Referring to FIG. 2, in the etching apparatus 500 according to another embodiment of the present invention, the chamber upper assembly 520 and the chamber housing 510 are connected to each other by a connecting portion 516, and an electrode is provided on the chamber upper assembly 520. An electrode plate assembly 524 comprising a is provided. In the chamber housing 510, a substrate holder 530 capable of lifting and lowering by a vertical moving device 550 is installed, and a ring-shaped component 10, which is a focus ring, is installed at a position where the substrate 10 is seated. A baffle plate 564 may be installed around the substrate holder 530. A shield ring 562 may be further installed between the substrate holder 530 and the baffle plate 564.

The etching apparatus 500 may apply the ring-shaped component 10 described above to a focus ring or the like to more efficiently etch the substrate.

In the etching method of the substrate according to another embodiment of the present invention, the substrate 1 is etched by the etching apparatus 500 described above to manufacture a microelectronic circuit. In detail, the etching method includes mounting the ring-shaped component 10 described above to the etching apparatus 500 and arranging the substrate 1 such that the edge of the substrate is positioned on the seating surface 206. And an etching step of manufacturing the etched substrate or the microelectronic component by etching the substrate 1 in a predetermined pattern by operating the etching apparatus. The etching apparatus may be a plasma etching apparatus.

In the etching method of the substrate, the ring-shaped component 10 described above may be applied to manufacture an etched substrate or an electronic circuit device which is more efficient and reduces defects.

Hereinafter, the present invention will be described in more detail with reference to specific examples. The following examples are merely examples to help understanding of the present invention, but the scope of the present invention is not limited thereto.

1. Preparation of the focus rings of Preparation Examples 1 to 8

A raw material such as boron carbide particles (particle size D50 = 0.7 μm), carbon, and a solvent were put in a slurry mixer to be mixed in a ball mill manner to prepare a slurryed raw material. The slurryed raw material was spray dried to granulate to prepare a granulated raw material. Electron micrographs of the granulated particles are shown in the inset photograph of FIG. 8.

Each of the raw materials was filled in a rubber mold having a disk-shaped hollow manufactured for forming a green body of a focus ring, loaded in a CIP device, and pressed to prepare green bodies. The green body was subjected to the carbonization process after the green processing, which was processed to have a size similar to that of the focus ring. The green body subjected to the carbonization process was sintered to atmospheric pressure in a sintering furnace. The sintered body thus manufactured is subjected to the operation of flattening the sintered body surface. The shape processing was performed in the form of a focus ring by a wire discharge method to manufacture a focus ring of each embodiment. The content, sintering temperature and time of the raw materials applied to each production example are summarized in Table 1 below.

2. Preparation of Focus Ring of Preparation Examples 9-14

Boron carbide particles (particle size D50 0.7 μm) were charged to a molding die as shown in FIG. 7, charged into the equipment as shown in FIG. 4, and then sintered to the temperatures, pressures and times shown in Table 1 below. Thus, the focus rings of Preparation Examples 9 to 14 were prepared.

3. Focus Rings of Comparative Examples 1 to 3

Polycrystalline SiC was prepared by CVD and applied as a focus ring of 1 in comparison. Specifically, a SiC deposited film was formed on a graphite substrate, the graphite substrate was removed, and a focus ring of Comparative Example 1 was manufactured through a shape processing and a polishing process. 9 is a cross-sectional photograph of a sample in which SiC is deposited on a graphite substrate as an inset photograph of FIG.

The Si focus ring was applied to the focus ring of Comparative Example 2 by applying single crystal Si (100, 111).

WC Focus Ring applied its own product (for specific manufacturing method, refer to 10-1870051).

Preparation # Additives1 Additive2 Boron Carbide Powder (% by weight) Sintering Temperature Sintering time pressure Remarks (weight%) (weight%) (℃) (time) (Mpa) One 20 0 Remaining amount 2380 10 Atmospheric pressure B ₄ C 2 20 0 Remaining amount 2380 15 Atmospheric pressure B ₄ C 3 10 0 Remaining amount 2380 15 Atmospheric pressure B ₄ C 4 0 5 Remaining amount 2380 15 Atmospheric pressure B ₄ C 5 0 10 Remaining amount 2380 15 Atmospheric pressure B ₄ C 6 0 15 Remaining amount 2380 15 Atmospheric pressure B ₄ C 7 10 5 Remaining amount 2380 15 Atmospheric pressure B ₄ C 8 20 0 Remaining amount 2380 15 Atmospheric pressure B ₄ C 9 10 0 Remaining amount 1950 5 25 B ₄ C 10 0 5 Remaining amount 1950 5 25 B ₄ C 11 0 10 Remaining amount 1950 5 25 B ₄ C 12 0 15 Remaining amount 1950 5 25 B ₄ C 13 10 5 Remaining amount 1950 5 25 B ₄ C 14 0 0 100 1950 5 25 B ₄ C Comparative Example 1 - - - - - - CVD-SiC Comparative Example 2 - - - - - - Si Comparative Example 3 - - - - - - WC

* Additive 1 applies carbon as the sintering characteristics improving agent 1.

** Additive 2 is boron oxide applied as sintering characteristics improving agent 2.

3. Evaluation of Physical Properties

(1) Relative density evaluation and surface observation

Relative density (%) was measured by the Archimedes method. The results are shown in Table 2 below. In addition, the surface characteristics were observed with the electron microscope, and each surface characteristic is shown in the accompanying drawing. "-" Indicates no measurement.

(2) Thermal Conductivity, Resistance and Etch Rate

Thermal conductivity [W / (m * k)] was measured by Laser Flash Apparatus (LFA457).

Resistance characteristic (Ω * cm) was measured with the specific resistance surface resistance measuring instrument (MCP-T610).

(3) Etch Rate Characteristics and Particle Formation

The etch rate characteristics (%) were applied under the same temperature and atmosphere by applying RF power of 2000 W to the TEL plasma equipment.

Particle formation was evaluated by the presence of particles remaining in the equipment chamber after the evaluation of the etch rate characteristics.

The evaluation results are shown in Tables 2 and 3.

Preparation # 25 degrees
Thermal conductivity 200 degrees
Thermal conductivity 400 degrees
Thermal conductivity 600 degrees
Thermal conductivity 800 degrees
Thermal conductivity HD ₂₅ : HD ₈₀₀ ratio surface
observe One - - - - - - 8 2 31.665 26.764 22.481 19.2 16.625 0.525 - 3 30.269 25.29 21.144 18.162 15.684 0.518 - 4 - - - - - - Figure 10 (a) 7 - - - - - - Figure 10 (b) 14 23.659 13.307 9.419 7.497 6.315 0.269 - Comparative Example 1 265.526 165.251 116.373 85.045 68.312 0.257 Figure 9

Preparation # Relative density Etch Rate (%)
(One) Etch Rate (%)
(2) Fluorine ion
Particle Formation Patan-myeon
Confirm One 90.76 - - - - 2 93.11 86.22 - X - 3 94.14 - - - - 4 94.32 - - - - 5 95.42 - - - - 6 94.35 - - - - 7 97.43 61.54 40 X Figure 11 (a) 14 99.9 59.39 36 X Figure 11 (b) Comparative Example 1 - 100 62 X - Comparative Example 2 - - 100 X - Comparative Example 3 - - 51 O -

Referring to the above experimental results, the samples of Preparation Examples 1 to 14 were excellent in the state density characteristics as a whole, it was also confirmed that the distribution of the carbon region is relatively evenly spread even if the surface characteristic results are observed.

Particularly, in the case of Production Example 14, it was confirmed that the relative density was considerably high, and it was considerably dense even when comparing the result of confirming the fracture surface, and had a dense structure in which pores were hardly observed substantially.

Preparation Example 5, which applied boron oxide as a sintering characteristic improving agent, had a higher relative density compared to Preparation Example 3, which applied the same amount of carbon. Compared with the same application, it has a superior relative density value.

The samples thus prepared were shown to have a relatively constant thermal conductivity over a wide temperature range because they are distinguished from each other in comparison with silicon carbide of Comparative Example 1. In addition, the corrosion resistance was also evaluated to be quite excellent. In addition, it was evaluated that no defects can be progressed in the high-precision etching process because no particles are formed by combining with fluorine ions in a plasma environment.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

1: board | substrate 10: ring-shaped component
100: main body 200: seating portion
102: main body outer diameter surface 104: main body inner diameter surface
106: main body upper surface 204: seat inner diameter surface
206: seating surface
500: etching apparatus 510: chamber housing
516: connection portion 520: chamber upper assembly
524: electrode plate assembly 530: substrate holder
540: duct 550: vertical moving device
562: shield ring 564: baffle plate
400: processing equipment, electric discharge wire processing
410: machining part housing 416: processing solution
420: wire moving unit 430: wire electrode
440: power supply (DC power supply) 480: sintered body
300: sintering apparatus
310: sintering furnace 320: heating unit
330: molding die 332: upper pressing portion
334: lower pressing portion 380: raw material or sintered body
600: sintering apparatus
610: power supply unit 612: first electrode
614: second electrode 620: forming die
622: first pressure unit 624: second pressure unit
630: chamber 680: raw material or sintered body
700: molding die
710: die bottom part 715: die outer part
720: die housing 730: die upper surface
732: main body upper surface 734: main body outer surface
736: seating upper surface portion 738: inner diameter upper surface portion
731: body seating upper surface part
19: hollow, ring-shaped hollow 190: main body hollow
290: Seating Heavy

Claims (12)

It is connected to the main body surface and the bottom of the body, the outer outer surface of the main body upper surface and the outer outer surface of the main body bottom and the inner outer surface of the main body upper surface which is located at regular intervals and surrounds part or all of the main body A body surrounded by a body inner diameter surface; And
The inner surface of the main body and its outer diameter are directly connected to each other, and the seating upper surface disposed at a lower position than the upper surface of the main body, the seating upper surface is located at regular intervals from the seating lower surface and the seating upper surface Including a seating portion surrounded by a seating inner diameter surface that is a surface connecting the inner contour of the inner peripheral line and the bottom of the seating portion; to allow the step with the body upper surface so that the substrate is seated on the seating upper surface,
A ring-shaped part for an etching apparatus, comprising a boron carbide sintered body in which the boron carbide-containing particles are necked, on its surface or in its entirety, and having a thermal conductivity of 27 W / (m * k) or less measured at 400 ° C. The method of claim 1,
The distance between the main body upper surface and the main body bottom is 1.5 to 3 times the distance between the seating upper surface and the seating bottom surface, ring-shaped parts for etching apparatus. The method of claim 1,
The ring-shaped part for etching apparatuses whose Ra roughness measured on the said main body upper surface or the said mounting part upper surface is 0.1 micrometer-1.2 micrometers. The method of claim 1,
A ring-shaped part for an etching apparatus, wherein a porosity is 3% or less on the main body upper surface or the seating upper surface. The method of claim 1,
The main body surface or the seating surface is a ring-shaped component for etching apparatus is a ratio of the thermal conductivity value measured at 25 ℃ and the thermal conductivity value measured at 800 ℃ 1: 1: 0.2 to 3. The method of claim 1,
A ring-shaped part for an etching apparatus, wherein an area of a portion having a pore diameter of 10 µm or more on the main body surface or the seating surface is 5% or less. The method of claim 1,
The ring-shaped component is a ring-type component for etching apparatus that does not form particles in contact with fluorine ions or chlorine ions in the plasma etching equipment. The method of claim 1,
The main body upper surface has an etching rate of 55% or less compared to the main body upper surface made of single crystal silicon (Si), ring-shaped parts for etching apparatus. The method of claim 1,
The ring-shaped component for an etching apparatus is a ring-type component for etching apparatus, the replacement time is a time when the height of the main body based on the upper surface of the main body is lowered to 10% or more of the initial main body height more than twice the single crystal silicon. The method of claim 1,
Wherein said ring-shaped component is a focus ring located in the chamber of the plasma processing apparatus and allowing the substrate to be seated. An etching apparatus in which the ring-shaped component according to claim 1 is mounted as a focus ring. Mounting the ring-shaped part for an etching apparatus according to claim 1 as a focus ring of the plasma etching apparatus and arranging the substrate such that the substrate is positioned on the seating surface; And
An etching step of manufacturing the etched substrate by operating the plasma etching apparatus to etch the substrate in a predetermined pattern;
Including, the etching method of the substrate.

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