TWI762190B - Ceramic component, method of preparing the same, and plasma etcher applied the same - Google Patents

Abstract

Embodiments relate to a ceramic component, a method of preparing the same, and a plasma etching device comprising the same. One embodiment is a ceramic component applied to a plasma etching device, the ceramic component comprises a composite material and filled equipment in contact with the composite material, the composite material comprises at least one between a boron carbide-based material and a carbon-based material, and the equipment comprises a boron carbide-based material. The boron carbide-based material of the composite material has a Raman shift spectrum measured through Raman spectroscopy, wherein Iab as the sum of Ia as a strength of a peak around 481cm^-1 and Ib as a strength of a peak around 534cm^-1 and Icd as the sum of Ic as a strength of a peak around 270cm^-1 and Id as a strength of peak around 320cm^-1 have a ratio Iab/Icd of 0.7 to 2.8, and the carbon-based material of the composite material has a Raman shift spectrum measured through Raman spectroscopy, wherein Ie as a strength of a peak of G band and If as a strength of a peak of D band have a ratio Ie/If of 0.2 to 2.

Description

Ceramic component, method for making the same, and plasma etching using the same device

Embodiments relate to a ceramic component and a plasma etching apparatus including the same.

In a plasma processing apparatus, an upper electrode and a lower electrode are arranged in a chamber, a substrate such as a semiconductor wafer or a glass substrate is mounted on the lower electrode, and electric power is applied between the two electrodes. Electrons accelerated by the electric field between the two electrodes, electrons emitted from the electrodes, or heated electrons cause ionizing collisions with process gas molecules, thereby generating a plasma of the process gas. Active species such as free radicals or ions in the plasma perform the desired microprocessing, such as etching, on the surface of the substrate. In recent years, the design rules in the manufacture of microelectronic devices and the like have become finer and finer, and in particular, higher dimensional accuracy is required for plasma etching, thus using significantly higher power than the prior art. The above-described plasma processing apparatus incorporates a focus ring, which is a ceramic member, affected by the plasma. The focus ring is also called edge ring or cold ring etc.

In the case of the above-mentioned focus ring, when the power increases, due to the wavelength effect of the standing wave and the skin effect of the electric field concentrated in the center part of the electrode surface, the center part is generally maximized on the substrate, and the edge becomes the lowest, so the substrate The inhomogeneity of the plasma distribution is deepened. If the plasma distribution on the substrate is non-uniform, the plasma processing becomes non-uniform, resulting in quality degradation of the microelectronic device.

Therefore, it is necessary to secure a highly functional focus ring in anticipation of an increase in the yield of microelectronic devices using wafers.

The above-mentioned background art is the technical information owned by the inventor for deriving the embodiment, or the technical information obtained during the deriving process, and is not necessarily a known art disclosed to the public before the application of the present invention.

As related existing patent documents, there are "Focus Ring and Plasma Device Including the Same" disclosed in Korean Patent Application No. 10-2128595.

An object of an embodiment is to provide a focus ring as a ceramic component with further improved physical properties.

Another object of the embodiment is to provide a method by which a semiconductor device can be more efficiently produced by applying a focus ring as a ceramic part having further improved physical properties.

In order to achieve the above object, the ceramic component according to the embodiment may be a ceramic component applied to a plasma etching apparatus, and the ceramic component may be characterized in that a surface of the ceramic component may include a matrix and a For the composite material, the specific resistance of the above-mentioned ceramic part can be 10 ^-1 Ω. cm to 20Ω. cm, the above-mentioned matrix can include boron carbide-based materials, the above-mentioned composite materials can include one selected from the group consisting of boron carbide-based materials, carbon-based materials and combinations thereof, the size of the above-mentioned composite materials can be below 40 μm, and the size of the above-mentioned composite materials In the Raman shift spectrum of boron carbide-based materials determined by Raman spectroscopy, the sum of the intensity Ia of the peak near 481 cm ^-1 and the intensity Ib of the peak near 534 cm ^-1 Iab and the peak near 270 cm ^-1 The ratio Iab/Icd of the intensity Ic to the sum of the intensity Id of the peak around 320 cm ^-1 Icd may be 1 to 1.8, and the carbon-based material of the above composite material in the Raman shift spectrum determined by Raman spectroscopy, G The ratio Ie/If of the intensity Ie of the band peak to the intensity If of the D band peak may be 0.2 to 2.

In one embodiment, in the intensity spectrum of the boron carbide-based material of the host, measured by Raman spectroscopy, the sum of the intensity Ia of the peak near 481 cm ⁻¹ and the intensity Ib of the peak near 534 cm ⁻¹ is the intensity Iab And the ratio Iab/Icd of the sum of the intensity Ic of the peak near 270 cm ⁻¹ and the intensity Id of the peak near 320 cm ⁻¹ may be 1.1 to 2.3.

In one embodiment, the average diameter of pores observed on the surface or cross-section of the ceramic member may be 5 μm or less.

In one embodiment, the above-mentioned ceramic component may include a placement portion having a first height from the reference surface and a main body portion having a second height from the reference surface, the placement portion may include an upper surface of the placement portion for the etching object to be placed, and the main body department An upper surface of the body portion etched directly by plasma may be included.

In one embodiment, an inclined portion may be further included between the seating portion and the main body portion, and the inclined portion may include an upper surface of the inclined portion connecting the upper surface of the seating portion and the upper surface of the main body portion.

In one embodiment, the flexural strength of the ceramic member may be 300 MPa or more.

In one embodiment, the content of the carbon-based material may be 0.5 wt % or more relative to the total content of the ceramic part.

In order to achieve the above object, the ceramic component according to another embodiment may be a ceramic component applied to a plasma etching apparatus, and the ceramic component is characterized in that the surface of the ceramic component may include a matrix and the matrix may be in contact with the matrix. Arrangement of the composite material, the specific resistance of the above-mentioned ceramic parts can be 10 ^-2 Ω. cm to 10 ^-1 Ω. cm, the above-mentioned matrix can comprise boron carbide-based material, the above-mentioned composite material can comprise one selected from the group consisting of boron carbide-based material, boron oxide and combinations thereof, the size of the above-mentioned composite material can be below 40 μm, the carbonization of the above-mentioned composite material In the Raman shift spectrum of boron-based materials determined by Raman spectroscopy, the sum of the intensity Ia of the peak around 481 cm ^-1 and the intensity Ib of the peak around 534 cm ^-1 and the sum of the intensity Iab of the peak around 270 cm ^-1 The ratio Iab/Icd of the intensity Ic to the sum of the intensities Id of the peaks around 320 cm ⁻¹ Icd may be 1 to 1.8.

In order to achieve the above-mentioned object, the ceramic member according to the embodiment has use as a member for semiconductor device manufacturing.

The surface of the above-mentioned ceramic component may include a matrix and a composite material arranged in contact with the above-mentioned matrix in the above-mentioned matrix, and the specific resistance of the above-mentioned ceramic component may be 10 ^-1 Ω. cm to 20Ω. cm, the above-mentioned matrix can include boron carbide-based materials, the above-mentioned composite materials can include one selected from the group consisting of boron carbide-based materials, carbon-based materials and combinations thereof, the size of the above-mentioned composite materials can be below 40 μm, and the size of the above-mentioned composite materials In the Raman shift spectrum of boron carbide-based materials determined by Raman spectroscopy, the sum of the intensity Ia of the peak near 481 cm ^-1 and the intensity Ib of the peak near 534 cm ^-1 Iab and the peak near 270 cm ^-1 The ratio Iab/Icd of the intensity Ic to the sum of the intensity Id of the peak around 320 cm ^-1 Icd may be 1 to 1.8, and the carbon-based material of the above composite material in the Raman shift spectrum determined by Raman spectroscopy, G The ratio Ie/If of the intensity Ie of the band peak to the intensity If of the D band peak may be 0.2 to 2.

In order to achieve the above-mentioned object, the use of the ceramic member according to the embodiment is a member for semiconductor device manufacturing.

The surface of the above-mentioned ceramic component may include a matrix and a composite material arranged in contact with the above-mentioned matrix in the above-mentioned matrix, and the specific resistance of the above-mentioned ceramic component may be 10 ^-2 Ω. cm to 10 ^-1 Ω. cm, the above-mentioned matrix can comprise boron carbide-based material, the above-mentioned composite material can comprise one selected from the group consisting of boron carbide-based material, boron oxide and combinations thereof, the size of the above-mentioned composite material can be below 40 μm, the carbonization of the above-mentioned composite material In the Raman shift spectrum of boron-based materials determined by Raman spectroscopy, the sum of the intensity Ia of the peak around 481 cm ^-1 and the intensity Ib of the peak around 534 cm ^-1 and the sum of the intensity Iab of the peak around 270 cm ^-1 The ratio Iab/Icd of the intensity Ic to the sum of the intensities Id of the peaks around 320 cm ⁻¹ Icd may be 1 to 1.8.

In order to achieve the above-mentioned object, the method of preparing the ceramic part according to the embodiment The method may include the steps of preparing one of i) a feedstock comprising boron carbide, ii) a feedstock comprising boron carbide, boron oxide and a carbon-based material, and iii) a feedstock comprising boron carbide and a carbon-based material; and treating step, by sintering and shape processing the above-mentioned raw materials to prepare ceramic parts, wherein, the above-mentioned preparation step may include the process of preparing raw material particles by slurrying and granulating the above-mentioned raw materials, and the zeta potential of the above-mentioned raw materials slurried may be + 15mV or more.

In order to achieve the above-mentioned object, the plasma etching apparatus according to the embodiment may include the above-mentioned ceramic member.

The ceramic part according to the embodiment is advantageous in that physical properties such as corrosion resistance and impact resistance are excellent.

The ceramic part according to the embodiment includes a composite material and a matrix filled while being in contact with the composite material, the composite material and the matrix having an intensity ratio of a specific wave number in the Raman spectrum satisfying a predetermined range, so that the matrix and the composite material can coordinate and Shows good mechanical properties.

1, 2, 3: Composite materials

11: Etching Objects

10: Ceramic parts

100: main body

106: Above the main body

150: inclined part

156: Above the inclined part

200: Placement Department

206: Above the placement department

300: Sintering device

310: Sintering furnace

320: Heating Department

330: Forming mold

332: Upper pressing part

334: Lower pressure part

380: Raw material or sintered body

500: Etching Device

510: Chamber Housing

516: Connector

520: Chamber upper assembly

524: Electrode Plate Assembly

530: Substrate bracket

540: Pipe

550: Vertical mobile device

562: Shield Ring

564: Bezel

G, D: with peaks

I', I": Section

1 is a schematic diagram illustrating the shape of the ceramic member according to the embodiment as viewed from above (arrows indicate measurement points, I′, I″: cross sections).

FIG. 2 is a schematic diagram illustrating a cross section (I′, I″) of a ceramic part according to an embodiment.

3 is a diagram illustrating a structure of an etching apparatus to which the ceramic member according to the embodiment is applied Schematic diagram of the structure.

FIG. 4 is a schematic diagram illustrating a sintering apparatus applied in the production process of the ceramic part according to the embodiment.

5 is a photograph of a surface of a ceramic part according to an embodiment taken by a scanning electron microscope (BSE, backscattered electron).

FIG. 6 is a photograph of the surface of the ceramic part according to the embodiment taken by a scanning electron microscope (SE, secondary electron).

7 shows the Raman shift spectra according to Raman spectroscopy of the composite materials of Examples 1 to 3 (Example 1, 1, Example 2, 1, Example 2, 2, Example from top, respectively Example 3,1 and Example 3,3).

8 is a cross-sectional photograph of the sintered body of Example 1 (1: composite material).

FIG. 9 shows the Raman shift spectrum according to Raman spectroscopy of Example 1 (1: composite material).

10 is a cross-sectional photograph of the sintered body of Example 2 (1, 2: composite material).

FIG. 11 shows the Raman shift spectrum according to Raman spectroscopy of Example 2 (1, 2: composite material).

12 shows cross-sectional photographs of the sintered body of Example 3 (1, 2: composite material).

FIG. 13 shows the Raman shift spectrum according to Raman spectroscopy of Example 3 (1, 2: composite material).

14 is a cross-sectional photograph of the sintered body of Example 3 (3: composite material).

FIG. 15 shows the Raman shift spectrum according to Raman spectroscopy of Example 3 (3: composite material).

16 shows Raman shift spectra according to Raman spectroscopy of the matrices of Examples 1 to 3. FIG.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that the present invention can be easily implemented by those skilled in the art. However, it should be noted that the present invention is not limited to these embodiments, but may be implemented in various other ways. Throughout the text, the same reference numerals refer to the same parts.

In the present specification, when a certain element "includes" another element, unless otherwise stated, the other element is not excluded, and other elements are further included.

In this specification, when a certain component is "connected" to another component, it includes not only the case of "direct connection", but also the case of "indirect connection with other components in the middle".

In this specification, B is located on A means B is located on A in direct contact with A, or B is located on A with other layers sandwiched between A and B, and is not limited to B and A. The way the surface of A is in direct contact is on the meaning of A.

In the present specification, "the combination thereof" as the term included in the Markush-type description means a mixture or combination of one or more selected from the group consisting of a plurality of constituent elements of the Markush-type description, thereby representing One or more selected from the group consisting of the above-mentioned plural constituent elements are included.

In this specification, the description of "A and/or B" means "A, B or A" and B".

In this specification, unless stated otherwise, terms such as "first", "second" or "A", "B" and the like are used to distinguish the same terms from each other.

In this specification, unless otherwise specified, a singular expression can be construed to include the singular or plural meaning read from the context.

Ceramic parts 10

In order to achieve the above object, the ceramic component 10 according to the embodiment may be a ceramic component applied to a plasma etching apparatus, and the ceramic component is characterized in that a surface of the ceramic component may include a matrix and be arranged in contact with the matrix in the matrix The composite material, the specific resistance of the ceramic parts can be 10 ^-2 Ω. cm to 10 ^-1 Ω. cm or 10 ^-1 Ω. cm to 20Ω. cm, the above-mentioned matrix can include boron carbide-based materials, the above-mentioned composite materials can include one selected from the group consisting of boron carbide-based materials, carbon-based materials and combinations thereof, the size of the above-mentioned composite materials can be below 40 μm, and the size of the above-mentioned composite materials In the Raman shift spectrum of boron carbide-based materials determined by Raman spectroscopy, the sum of the intensity Ia of the peak near 481 cm ^-1 and the intensity Ib of the peak near 534 cm ^-1 Iab and the peak near 270 cm ^-1 The ratio of Iab/Icd to the sum of the intensity Ic of and the sum of the intensity Id of the peak around 320 cm ⁻¹ Icd may be 1 to 1.8.

FIG. 1 is a plan view showing one example of the ceramic member according to the embodiment, and FIG. 2 is a schematic view showing a cross section of the ceramic member according to the embodiment. Next, the ceramic member will be described with reference to FIGS. 1 and 2 and the like.

The above-mentioned ceramic component 10 may be a focus ring applied to the plasma etching apparatus 500 .

The ceramic component 10 described above may include a composite material and a matrix that is filled while in contact with the composite material. 5 and 6, the composite material and the matrix on the surface of the above-mentioned ceramic member can be confirmed.

The above-mentioned composite material may mainly include one of boron carbide-based materials and carbon-based materials, and may partially include pores.

The boron carbide-based material of the composite material described above may include crystalline boron carbide, and may also include some amorphous boron carbide.

In the Raman shift spectrum of the boron carbide-based material of the above composite material determined by Raman spectroscopy, the sum of the intensity Ia of the peak near 481 cm ⁻¹ and the intensity Ib of the peak near 534 cm ⁻¹ and Iab at 270 cm ⁻ The ratio Iab/Icd of the sum Icd of the intensity Ic of the peak near ¹ and the sum of the intensity Id of the peak near 320 cm ⁻¹ may be 1 to 1.8. The above-mentioned Iab/Icd may be 1.1 to 1.6.

In the boron carbide-based material of the above composite material, the peak wavenumber of the Raman shift spectrum can be 270cm ^-1 , 320cm ^{-1 , 481cm -1 , 534cm -1 , 728cm -1} or 1088cm ^-1 , and the error range can be ± 10 cm ^-1 , and the highest intensity within each wavenumber error range is considered a peak.

Referring to the Raman shift spectrum of single-crystal boron carbide (B ₄ C), it was found that the peaks near the wave numbers of 270 cm ^-1 and 320 cm ^-1 are weaker than those near the wave numbers of 481 cm ^-1 and 534 cm ^-1 . The intensity and full width at half maximum of the peaks at 270 cm ^-1 , 320 cm ^-1 , 481 cm ^-1 and 534 cm ^-1 may be possible depending on the carbon content in the boron carbide-based material, the pressure at the time of preparation (sintering), the additives, etc. will change.

The boron carbide-based material of the composite material of the ceramic component 10 according to the embodiment When the above-mentioned Iab/Icd is within the above-mentioned range, it has a specific carbon content and exhibits good crystallinity and is in harmony with the matrix. Thereby, the strength and corrosion resistance of the ceramic member suitable for the plasma etching apparatus can be ensured.

The peaks of the Raman shift spectrum in the carbon-based material of the composite material are roughly classified into two types: D-band peaks and G-band peaks. The wave number of the above-mentioned D-band may be about 1360±50 cm ⁻¹ , and the wave number of the above-mentioned G-band may be about 1580±50 cm ⁻¹ . The above D-band peaks can be considered not to be derived from the graphitic structure, while the above-mentioned G-bands can be considered to be derived from the graphitic structure. Therefore, it can be considered that the higher the ratio of the above-mentioned G band, the higher the ratio of graphite occupied in the carbon-based material.

In the carbon-based material of the composite material, in the Raman shift spectrum measured by Raman spectroscopy, the ratio Ie/If of the intensity Ie of the G band peak and the intensity If of the D band peak may be 0.2 to 2. The above-mentioned Ie/If may be 0.5 to 1.5. The carbon-based material of the above-mentioned composite material having the above-mentioned characteristics has appropriate crystallinity and can be coordinated with the boron carbide-based material and the matrix of the above-mentioned composite material.

The above-mentioned matrix may mainly include boron carbide-based materials, and may also include boron carbide, which may have coarse grains compared with the above-mentioned composite materials, and may have some pores.

In the Raman shift spectrum of the boron carbide-based material of the above matrix determined by Raman spectroscopy, the sum of the intensity Ia of the peak near 481 cm ^-1 and the intensity Ib of the peak near 534 cm ^-1 Iab and the intensity Ib of the peak near 270 cm ^-1 The ratio Iab/Icd of the sum of the intensities Ic of the peaks in the vicinity and the intensities Id of the peaks in the vicinity of 320 cm ⁻¹ and Icd may be 1.1 to 2.3. The above-mentioned Iab/Icd may be 1.15 to 2. When the above-mentioned Iab/Icd is within the above-mentioned range, it has a specific carbon content, exhibits good crystallinity, and is in harmony with the composite material. Thereby, the strength and corrosion resistance of the ceramic member suitable for the plasma etching apparatus can be ensured.

The size of the above-mentioned composite material may be 40 μm or less. The size of the above-mentioned composite material may be 30 μm or less. The size of the above-mentioned composite material may be 0.1 μm or more. The size of the above-mentioned composite material may be 0.3 μm or more. Also, the number of the above-mentioned composite materials per unit area (cm ² ) may be 2×10 ⁵ /cm ² to 6×10 ⁵ /cm ² . The number of the above-mentioned composite materials per unit area (cm ² ) may be 2.5×10 ⁵ /cm ² to 5.5×10 ⁵ /cm ² . Appropriate strength and corrosion resistance can be ensured when a ceramic member having the size and number of the composite material described above is applied to a plasma etching apparatus.

The specific resistance of the above-mentioned ceramic member 10 may be 10 ^-2 Ω as a relatively low resistance. cm to 10 ^-1 Ω. cm. The specific resistance of the above-mentioned ceramic member may be 10 ^-1 Ω as a relatively high resistance. cm to 20Ω. cm. The above-mentioned specific resistance value can be formed according to normal pressure or pressurized conditions at the time of production. In addition, the ceramic member having the above-mentioned specific resistance value can be easily shaped and can exhibit good surface quality. The above-mentioned ceramic component 10 may include a placement portion 200 having a first height from the reference surface and a main body portion 100 having a second height from the reference surface, the placement portion may include an upper surface 206 of the placement portion for placement of the etching object 11, and the main body portion The upper body portion 106 may be included by direct plasma etching.

At least a part of the etched object 11 is arranged on the above-mentioned placement portion 200 , and the above-described placement portion 200 supports an etched object such as a wafer.

The main body portion 100 helps the etching object to be uniformly etched into a desired shape without defects by regulating the flow of plasma ions transmitted to the etching object 11 to be smooth.

Although the main body portion 100 and the placement portion 200 are described as being separated from each other, the body portion 100 and the placement portion 200 may be provided separately from each other, or may be provided integrally without limitation.

The mounting portion 200 has a first height, and the main body portion 100 has a second height.

The above-mentioned first height and the above-mentioned second height refer to the height to the upper surface of the placement portion and the height to the upper surface of the main body portion respectively based on the reference plane. In this case, the reference surface may be, for example, the lowest bottom surface among the bottom surface of the main body portion and the bottom surface of the placement portion.

The first height and the second height may be different heights from each other, and more specifically, the second height is higher than the first height.

The placement portion 200 and the placement portion upper surface 206 may be an integral type without separate layer divisions, or may be a separate type in which the layers are distinguished when the placement portion and the placement portion upper surface are viewed in cross-section. In the case of the discriminating type, the above-mentioned seating portion may have the form of a deposited layer or coating thereon. For example, the above-described deposited layer or coating may be a layer comprising the above-described matrix and composite material. In the case where the upper surface of the placement portion is of a discriminating type, the upper surface of the placement portion in the form of the deposition layer or coating may have a thickness of 1% to 40% of the thickness of the placement portion based on the pre-etching reference. The upper surface of the placement portion may have a thickness of 5% to 25% of the thickness of the placement portion based on the pre-etching reference.

The above-mentioned placement portion upper surface 206 may include an unexposed surface of the placement portion on which the etching object 11 is disposed and an exposed surface of the placement portion where the etching object is not disposed.

The main body 100 and the upper surface 106 of the main body may be an integral type without separate layer division, or may be the main body and the main body when viewed in cross-section. Distinguishing type that distinguishes the phase layer when the body is above the body. In the case of the differentiated type, the above-mentioned main body portion may have the form of a deposited layer or coating thereon. For example, the above-described deposited layer or coating may be a layer comprising the above-described matrix and composite material. In the case where the upper surface of the main body portion is of a discriminating type, the upper surface of the main body portion in the form of the deposition layer or coating may have a thickness of 1% to 40% of the thickness of the reference body portion before etching. The upper surface of the body portion may have a thickness of 5% to 25% of the thickness of the reference body portion before etching.

The ceramic component 10 may further include an inclined portion 150 connecting the mounting portion 200 and the main body portion 100 .

The mounting portion 200 and the main body portion 100 have different heights, and the inclined portions 150 can be connected with different heights.

Although the main body portion 100 , the placement portion 200 and the inclined portion 150 are described as being separated from each other, the main body portion 100 , the placement portion 200 and the inclined portion 150 may be provided separately from each other, or may be integrally provided without limitation.

The inclined portion 150 includes a top surface 156 of the inclined portion connecting the top surface 206 of the mounting portion and the top surface 106 of the main body portion.

The inclined portion 150 and the inclined portion upper surface 156 may be an integral type without separate layer division, or may be a separate type in which the phase layers are distinguished when the inclined portion and the inclined portion upper surface are viewed in cross-section. In the case of the discriminating type, the above-mentioned inclined portion may have the form of a deposited layer or coating thereon. For example, the above-described deposited layer or coating may be a layer comprising the above-described matrix and composite material. In the case where the top surface of the inclined portion is of a discriminating type, the top surface of the inclined portion in the form of the deposition layer or coating may have a thickness of 1% to 40% of the thickness of the inclined portion based on the pre-etching reference. The above-mentioned inclined portion may have a The thickness before etching is 5% to 25% of the thickness of the reference inclined portion.

The above-mentioned inclined portion upper surface 156 is arranged to have an inclined portion angle (not shown in the figure). The angle of the inclined portion may be measured based on the unexposed surface of the placement portion, and may have an angle greater than about 0 degrees and equal to or less than about 110 degrees.

When the length of the inclined portion 150 is 0 mm, the angle between the placement portion and the main body portion may be greater than or equal to about 90 degrees and less than or equal to about 110 degrees. When the length of the inclined portion 150 is greater than about 0 mm and less than about 90 degrees, the length of the inclined portion may be greater than 0 mm.

The slope angle may be linear or non-linear when viewing the cross section of the slope upper surface 156 as a whole. Connected by a straight line between the two points of P1 (not shown in the figure) where the upper surface of the seating part 206 meets the upper surface of the inclined part and P2 (not shown in the figure) where the upper surface of the inclined part meets the upper surface of the main body part 106 in cross section. The imaginary line is used as a reference to measure the angle of the inclined portion.

For example, the angle of the inclined portion may be about 30 degrees to about 70 degrees based on the unexposed surface of the seating portion. The above-mentioned angle of the inclined portion may be about 40 degrees to about 60 degrees. When the angle of the inclined portion is provided as described above, the flow of plasma can be controlled more stably when plasma etching is performed.

The placement portion 200 , the inclined portion 150 and the main body portion 100 may respectively have a ring shape, but are not limited thereto.

Ceramic components may include materials that are difficult to morphologically process as highly corrosion-resistant materials. The focus ring, which is a general ceramic part, is processed in a shape with a step difference Sometimes it breaks during the process. Embodiments propose further improved ceramic parts with Raman properties through materials with more improved properties for easier shape processing.

The ceramic component 10 has PS1 which is a point on the upper surface of the mounting portion, PS2 which is a point on the upper surface of the inclined portion, and PS3 which is a point on the upper side of the main body portion.

The difference between the maximum value and the minimum value of residual stress measured at PS1 and PS3 of the ceramic component 10 may be within 40% of the average value of PS1 and PS3. The difference between the maximum value and the minimum value of the residual stress measured at the above PS1 and the above PS3 may be within 15% of the average value of the above PS1 and the above PS3. The difference between the maximum value and the minimum value of residual stress measured at the above PS1 and the above PS3 may be within 10% of the average value of the above PS1 and the above PS3, or may be 1% to 10%. The ceramic part having the above-mentioned characteristics can have more stable workability and stability.

The difference between the residual stress measured at the above PS1 and the residual stress measured at the above PS3 of the ceramic component 10 may be -600 MPa to +600 MPa. The difference between the residual stress measured at PS1 above and the residual stress measured at PS3 above may be -300 MPa to +300 MPa. The difference between the residual stress measured at PS1 above and the residual stress measured at PS3 above may be -200 MPa to +200 MPa. The difference between the residual stress measured at PS1 above and the residual stress measured at PS3 above may be -150 MPa to +150 MPa. The difference between the residual stress measured at PS1 above and the residual stress measured at PS3 above may be -130 MPa to +130 MPa. In this case, it is possible to obtain a material having a higher density and excellent workability Ceramic parts.

The standard deviation of the residual stress of the ceramic member 10 measured at the PS1, the PS3, and the PS2, respectively, may be 300 MPa or less. The standard deviation of the residual stress measured in each of the above PS1, the above PS3, and the above PS2 may be 250 MPa or less. The standard deviation of the residual stress measured in the above-mentioned PS1, the above-mentioned PS3, and the above-mentioned PS2 may be 150 MPa or less for the ceramic member. The standard deviation of the residual stress measured in each of the above PS1, the above PS3, and the above PS2 may be 75 MPa or less. The standard deviation of the residual stress measured in the above PS1, the above PS3 and the above PS2, respectively, may be greater than 0 MPa. The standard deviation of the residual stress measured in each of the above PS1, the above PS3, and the above PS2 may be 0.1 MPa or more. With the above standard deviation, a focus ring with higher density and excellent workability can be obtained.

The standard deviation of residual stress measured at PS1, PS3, and PS2 of the ceramic component 10 may be 20% or less of the average of the residual stress measured at PS1, PS2, and PS3, respectively. The standard deviation of the residual stress measured at PS1, PS3, and PS2, respectively, may be 15% or less of the average of the residual stress measured at PS1, PS2, and PS3, respectively. The standard deviation of the residual stress measured at PS1, PS3, and PS2, respectively, may be 10% or less of the average of the residual stress measured at PS1, PS2, and PS3, respectively. The standard deviation of the residual stress measured at PS1, PS3, and PS2, respectively, may be 8% or less of the average of the residual stress measured at PS1, PS2, and PS3, respectively. With the above-mentioned characteristics, a ceramic part with higher density and excellent workability can be obtained.

The difference between the residual stress measured at PS1, PS3, and PS2 and the average of residual stress measured at PS1, PS2, and PS3, respectively, of the ceramic component 10 may be -350 MPa to +350 MPa. The difference between the residual stress measured at the above PS1, the above PS3, and the above PS2, respectively, and the average of the residual stress measured at the above PS1, the above PS2, and the above PS3, respectively, may be -300 MPa to +300 MPa. The difference between the residual stress measured at the above PS1, the above PS3, and the above PS2, respectively, and the average of the residual stress measured at the above PS1, the above PS2, and the above PS3, respectively, may be -250 MPa to +250 MPa. The difference between the residual stress measured at the above PS1, the above PS3, and the above PS2, respectively, and the average of the residual stress measured at the above PS1, the above PS2, and the above PS3, respectively, may be -200 MPa to +200 MPa. With the above-mentioned characteristics, a focus ring having higher density and excellent workability can be obtained.

The difference between the maximum value and the minimum value of the residual stress measured at the PS1, PS3, and PS2 of the ceramic component 10 may be within 25% of the average. The difference between the maximum value and the minimum value of the residual stress measured in the above-mentioned PS1, the above-mentioned PS3, and the above-mentioned PS2 may be within 20% of the average of the ceramic component. The difference between the maximum value and the minimum value of the residual stress measured at the above PS1, the above PS3 and the above PS2, respectively, may be within 15% of the average. In addition, the difference between the maximum value and the minimum value of the residual stress measured by the focus ring at the PS1, the PS3, and the PS2, respectively, may be within 10% of the average. The difference between the maximum value and the minimum value of the residual stress measured at the above PS1, the above PS3, and the above PS2, respectively, may be within 5% of the average. On the above PS1, above PS3 and The difference between the maximum value and the minimum value of the residual stress respectively measured by PS2 may be more than 1% of the average. With the distribution of the residual stress described above, more stable shape processing can be performed, and a more stable corrosion-resistant material can be obtained.

The standard deviation of the residual stress measured on the surface of the ceramic member 10 at different distances from the center may be 350 MPa or less.

The standard deviation of residual stress measured on the surface of the ceramic member 10 at different distances from the center may be 300 MPa or less. The standard deviation of the residual stress measured on the surface at different distances from the center of the ceramic member may be 250 MPa or less. The standard deviation of the residual stress measured on the surface at different distances from the center of the ceramic member may be 200 MPa or less.

The standard deviation of the residual stress measured on the surface of the ceramic member 10 at different distances from the center may be 120 MPa or less. The standard deviation of the residual stress measured on the surface at different distances from the center of the ceramic member may be 100 MPa or less.

As a result of confirmation by the inventors by repeated measurements, the residual stress measured on the surfaces of a plurality of locations at the same distance from the center has little difference. Therefore, in the case of having the above-mentioned characteristics, the residual stress distribution is substantially uniform, and therefore, a focus ring which is a ceramic member having excellent workability, stability, and the like can be provided.

The center of the ceramic member 10 described above means that, in the case of an annular ceramic member, the center of the inner diameter circle corresponds to the center of the ceramic member, and in the case of a non-annular ceramic member, the center is the intersection of the major axis and the minor axis.

The surface of the above-mentioned ceramic part 10 may be ground. in the above In the ceramic component, the upper surface 206 of the seating portion and the upper surface of the main body portion 106 may be ground, or the upper surface of the seating portion, the upper surface of the main body and the upper surface 156 of the inclined portion may be respectively ground.

The arithmetic mean roughness Ra of the surface of the ceramic member 10 may be 2 μm or less. The arithmetic mean roughness Ra of the surface of the ceramic member may be 1.7 μm or less. The arithmetic mean roughness Ra of the surface of the ceramic member may be 0.05 μm or less.

The maximum height roughness Rt of the surface of the above-mentioned ceramic part 10 may be 0.1 μm to 25 μm. The maximum height roughness Rt of the above-mentioned surface may be 0.1 μm to 10 μm. The maximum height roughness Rt of the above-mentioned surface may be 0.1 μm to 5 μm. The maximum height roughness Rt of the above-mentioned surface may be 0.1 μm to 2 μm.

For example, the arithmetic mean roughness Ra of the upper surface 106 of the main body portion may be 0.5 μm or less, and the maximum height roughness Rt may be 8 μm or less.

The arithmetic mean roughness Ra of the above-mentioned inclined portion upper surface 156 may be 2 μm or less, and the maximum height roughness Rt may be 15 μm or less.

The arithmetic mean roughness Ra of the above-mentioned placement portion upper surface 206 may be 2 μm or less, and the maximum height roughness Rt may be 15 μm or less.

Having the above-described roughness characteristics can substantially suppress particle formation problems that may occur due to physical factors when plasma etching is performed.

The above-mentioned ceramic part 10 is an annular part, and the difference between the outer diameter and the inner diameter can be 10 mm to 80 mm. The difference between the above-mentioned outer diameter and inner diameter may be 15 mm to 60 mm. The difference between the outer and inner diameters may be 20mm to 50mm.

The above-mentioned ceramic part 10 is an annular part, and its thickness may be 1 mm to 45 mm. The thickness of the above-mentioned ceramic member may be 1.5 mm to 40 mm. The thickness of the above-mentioned ceramic member may be 2 mm to 38 mm.

The above-mentioned ceramic member 10 is an annular member, and its inner diameter may be 160 mm or more. The inner diameter of the above-mentioned ceramic member may be 200 mm or more. The inner diameter of the ceramic member may be 300 mm or more. The inner diameter of the ceramic part may be 450 mm or less.

The above-described ceramic member 10 may have a porosity of about 10% or less. The ceramic part described above may have a porosity of about 3% or less. The ceramic part described above may have a porosity of about 1% or less. The above-described ceramic member 10 may have a porosity of about 0.01% or more. Ceramic parts with low porosity as above can exhibit better corrosion resistance.

The average diameter of pores observed from the surface or cross-section of the ceramic member 10 may be 5 μm or less. The average diameter of the pores may be 3 μm or less. The average diameter of the pores may be 1 μm or less. The average diameter of the pores may be 0.1 μm or more. In addition, the area of the portion where the diameter of the pores is 10 μm or more may be 5% or less based on the total area of the pores. The above-mentioned ceramic member having the above-mentioned average diameter of pores may have improved corrosion resistance. In this case, the average diameter of the pores is derived from the diameter of a circle having the same area as the cross-sectional area of the pores.

The boron carbide-based material contained in the above-described ceramic component 10 may have a form in which the boron carbide-containing particles are necked with each other.

The ceramic component 10 described above may include deposited boron carbide and/or sintered boron carbide.

The above-mentioned ceramic component 10 may include a boron carbide-based material, and the above-mentioned boron carbide-based material may be boron carbide (B ₄ C). The above-mentioned ceramic member may include 85% by weight or more of boron carbide with respect to the total weight. The above-mentioned ceramic member may include 90% by weight or more of boron carbide with respect to the total weight. The above-mentioned ceramic member may include 93% by weight or more of boron carbide with respect to the total weight. The above-mentioned ceramic member may include 99.9 wt % or less of boron carbide with respect to the total weight.

In addition to boron carbide-based materials, the above-described ceramic component 10 may also include carbon-based materials. The content of the above-mentioned carbon-based material may be 0.5% by weight or more with respect to the total weight. The content of the above-mentioned carbon-based material may be 1% by weight or more with respect to the total weight. The content of the above-mentioned carbon-based material may be 15% by weight or less with respect to the total weight. The content of the above-mentioned carbon-based material may be 10% by weight or less with respect to the total weight. The ceramic part satisfying the content of the carbon-based material described above can exhibit excellent corrosion resistance.

When the etching object 11 , ie, the wafer, is arranged in the chamber of the plasma etching apparatus, the above-mentioned ceramic member 10 can be used as a support for supporting the above-mentioned etching object, ie, the wafer.

Preparation method of ceramic parts

In order to achieve the above objects, a method for producing a ceramic part according to another embodiment may include: a preparation step of producing a raw material including boron carbide; and a processing step of producing a ceramic part by sintering and shape-processing the raw material.

In the above-mentioned preparation step, the above-mentioned raw material includes boron carbide powder. The boron carbide powder may be high-purity (boron carbide content of 99.9% by weight or more) boron carbide powder. The above-mentioned boron carbide powder may also be a low-purity (boron carbide content of 95 to 99.9 wt %) boron carbide powder.

The boron carbide powder described above may have an average particle diameter of about 1.5 μm or less based on _D50 . The boron carbide powder described above may have an average particle diameter of about 0.3 μm to about 1.5 μm based on _D50 . The boron carbide powder described above may have an average particle diameter of about 0.4 μm to about 1.0 μm based on _D50 . Also, the boron carbide powder described above may have an average particle diameter of about 0.4 μm to about 0.8 μm based on _D50 . When a powder with a small average particle size is used, the densification of the sintered body can be more easily achieved.

The boron carbide powder described above may have an average particle diameter of 2 μm to 10 μm based on _D50 . The boron carbide powder described above may have an average particle diameter of 3 μm to 8 μm on the basis of _D50 . The boron carbide powder described above may have an average particle diameter of 4 μm to 6 μm based on _D50 . When the boron carbide powder having the above-mentioned particle size range is used, the process productivity can be improved while achieving densification of the sintered body.

The above-mentioned raw materials may further contain additives. The above-mentioned additives may be introduced into the process of producing the above-mentioned ceramic parts in powder, liquid or gas phase. Examples of materials used as the above additives include carbon-based materials, boron oxide, silicon, silicon carbide, silicon oxide, boron nitride, boron or silicon nitride, and the like. The content of the above-mentioned additives may be about 0.1% by weight to about 30% by weight with respect to the above-mentioned raw materials.

The above additive may be a sintering performance improver. The above-mentioned sintering property improver is contained in the above-mentioned raw material to improve the physical properties of boron carbide. The above-mentioned sintering performance improver may be one or more selected from the group consisting of carbon-based materials, boron oxide, silicon, silicon carbide, silicon oxide, boron nitride, silicon nitride, and combinations thereof. The content of the above-mentioned sintering performance improver may be about 30% by weight or less with respect to the total amount of the above-mentioned raw materials. Specifically, the content of the above-mentioned sintering performance improver may be about 0.001% by weight to about 30% by weight with respect to the total amount of the above-mentioned raw materials. The content of the above sintering performance improver is relative to the above The total amount of the raw materials may be about 0.1% to 15% by weight. The content of the above-mentioned sintering performance improver may be about 1% by weight to 10% by weight with respect to the total amount of the above-mentioned raw materials. When the content of the above-mentioned sintering performance improver is more than 30% by weight, the strength of the sintered body may be reduced instead.

As a residual amount other than the above-mentioned sintering performance improver, the above-mentioned raw material may include a boron carbide raw material such as boron carbide powder or the like.

When a carbon-based material is used as the above-mentioned sintering performance improver, the above-mentioned carbon-based material may be added in the form of a resin that is converted into carbon upon carbonization, such as a phenolic resin or a novolak resin, or a form in which the above-mentioned resin is carbonized through a carbonization process may be used of carbon. The carbonization step of the above-mentioned resin may generally be a step of carbonizing a polymer resin. The above-mentioned phenol resin having a residual carbon content of 40% by weight or more can be used.

When a carbon-based material is used as the above-mentioned sintering performance improver, the above-mentioned carbon-based material may be used in an amount of 1 wt % to 30 wt % with respect to the total weight of the raw materials. The above-mentioned carbon-based material may be used in an amount of 1 wt % to 25 wt % with respect to the total weight of the raw materials. The above-mentioned carbon-based material may be used in an amount of 2 wt % to 15 wt % with respect to the total weight of the raw materials. The above-mentioned carbon-based material may be used in an amount of 3 wt % to 10 wt % with respect to the total weight of the raw materials. When the carbon-based material is used as the above-mentioned sintering performance improver in the above-mentioned content, boron carbide that easily induces a necking phenomenon between particles and has a relatively large particle size and a relatively high relative density can be obtained. However, when the content of the above-mentioned carbon-based material is more than 10% by weight, gas such as carbon dioxide is excessively generated during pressurization during sintering, and thus workability may decrease.

When the above-mentioned boron oxide and the above-mentioned carbon are used together as the above-mentioned sintering property improver, The relative density of the above-mentioned sintered body can be further increased, so that a sintered body with reduced carbon regions existing in pores and more improved density can be produced.

The above-mentioned boron oxide and the above-mentioned carbon may be used in a weight ratio of 1:0.8 to 4. In this case, a sintered body having a more improved relative density can be obtained.

According to needs, the above-mentioned raw materials may also include dispersing agents, binding agents, defoaming agents, solvents, and the like.

The above-mentioned dispersing agent may be 2-propenoic acid, ethanol, sodium salt, ammonium salt, or the like. The content of the above-mentioned dispersing agent may be 0.08% by weight to 2% by weight with respect to the total weight. The content of the above-mentioned dispersing agent may be 0.1% by weight to 1.5% by weight with respect to the total weight.

The above-mentioned binding agent may be polyvinyl butyral, polyvinyl alcohol, phenol resin, acrylic resin, and the like.

The above-mentioned antifoaming agent may be a nonionic surfactant or the like.

The above solvent may be deionized water (DI water), ethanol (ethanol), toluene (toluene) and the like.

The raw materials described above do not contain, or contain very low levels of, materials capable of producing solid by-products during semiconductor processing. For example, as examples of materials capable of producing the above-mentioned by-products, metals such as iron, copper, chromium, nickel or aluminum can be mentioned. The content of the material capable of generating the above-mentioned by-product may be 500 ppm or less with respect to the above-mentioned raw material.

The above-mentioned preparation steps may include pulping and granulating the above-mentioned raw materials to prepare the raw materials. The process of pelletizing.

The above-mentioned pulping is a process of mixing raw materials sufficiently and substantially uniformly by a method such as ball milling. It can be used together with a solvent, and as the solvent, alcohol such as methanol, ethanol, butanol, or the like, or water can be used. The above-mentioned solvent may be used in an amount of about 60 vol % to about 80 vol % based on the entire above-mentioned slurry. As the ball mill, specifically, polymer balls can be used, and the above-mentioned slurry mixing process can be performed for about 5 hours to about 20 hours.

The zeta potential of the pulp-like raw material prepared by the above-mentioned pulping may be +15 mV or more. The zeta potential of the above-mentioned slurry-like raw material may be +17.4 mV or more. The zeta potential of the above-mentioned slurry-like raw material may be +20.6 mV or more. The zeta potential of the above-mentioned slurry-like raw material may be +25 mV or more. The zeta potential of the above-mentioned slurry-like raw material may be +40 mV or less. The slurry with the above-mentioned zeta potential range can uniformly disperse the internal material so as to exhibit uniform physical properties when sintered through the subsequent process.

The above-mentioned granulation can be achieved by granulating the raw material by removing the solvent contained in the above-mentioned slurry by evaporation or the like while spraying the above-mentioned slurry. The granulated raw material particles prepared as described above are characterized in that the particles themselves are generally circular in shape and have a relatively constant particle size.

The size of the raw material particles subjected to the above-mentioned granulation process may be 50 μm to 160 μm. The size of the above-mentioned raw material particles may be 60 μm to 100 μm. When the raw material particles having the above-mentioned characteristics are used, it is easy to fill a mold in a subsequent process such as sintering, and workability can be further improved.

The above-mentioned processing steps may include filling the above-mentioned raw materials in a mold, a forming mold The process of sintering in tools, etc. The above-mentioned processing step may include a forming process of forming the formed body into a shape for forming raw material particles before the above-mentioned sintering. The above-mentioned forming process may include cold isostatic pressing (Cold Isostatic Press, CIP), green body processing, and the like.

The above-mentioned treatment step may include a carbonization process of carbonizing the raw material particles filled in a mold, a molding die, etc., or a formed body that has undergone the above-mentioned forming process, before the above-mentioned sintering, whereby, such as aldehyde resin, novolak resin, which may be contained in the formed body. and other organic additives can be carbonized.

The sintering in the above-mentioned treatment steps may be pressure sintering or normal pressure sintering.

Many attempts have been made to prepare a boron carbide sintered body by the above-mentioned pressure sintering. However, preparation-evaluation is usually performed with a small sample, called a test piece, with a width and length of about 30 mm or less. It is difficult to prepare a boron carbide sintered body with a larger diameter.

When producing a relatively large-sized pressurized sintered body, it is preferable to produce a pressurized sintered body having uniform characteristics (physical properties) as a whole, but it is difficult to produce a pressurized sintered body having relatively more constant characteristics as a whole. In particular, in the case of the pressurized sintered body, unlike the normal pressure sintered body, it has the characteristics that cracks, cracks, and the like easily occur during shape processing. One of the reasons for this characteristic is because the pressurized sintered body has uneven characteristics as a whole.

The moulds of the above processing steps may have a length or diameter of 450 mm or more. In order to produce a ceramic part having a diameter of 320 mm or more as a ring-shaped part, it is necessary to produce a sintered body having a relatively large diameter or length. Generally, the size of the sintered body is reduced in the sintering process, and the size of the above-mentioned mold is preferably 450 mm in consideration of the amount lost in the subsequent shape processing for making the ceramic part have a precise ring shape, etc. above. The size of the above-mentioned mold may be 450mm to 600mm.

The above-mentioned sintering can be performed at an appropriate sintering temperature and sintering pressure.

The above-mentioned sintering temperature may be about 1800°C to about 2500°C. The above-mentioned sintering temperature may be about 1800°C to about 2200°C. The above-mentioned sintering pressure may be normal pressure. The above-mentioned sintering pressure may be about 10 MPa to about 110 MPa. The above-mentioned sintering pressure may be about 15 MPa to about 60 MPa. The above-mentioned sintering pressure may be about 17 MPa to about 30 MPa. When the above-mentioned forming step is carried out at the above-mentioned sintering temperature and/or sintering pressure, high-quality ceramic parts are more efficiently produced.

In the case of pressure sintering, the above-mentioned sintering time may be 0.5 hours to 10 hours. The above-mentioned sintering time may be 0.5 hours to 7 hours. The above-mentioned sintering time may be 0.5 hours to 4 hours. The sintering time of the above-mentioned pressure sintering is relatively short compared with the time of the sintering process performed under normal pressure, and even with such a short time, a ceramic part having the same or higher strength can be produced.

The above-mentioned sintering can be carried out in a reducing atmosphere. In this case, highly corrosion-resistant boron carbide having a higher content of boron carbide and a reduced area of carbon aggregation can be produced by reducing substances such as boron oxide that can be formed by the reaction of boron carbide powder with oxygen in the air.

During the sintering process described above, boron carbide powders grow and neck each other to form a sintered body with high strength. In addition, the additives used at the same time are changed according to the temperature and pressure so as to be able to suppress or promote the growth of the boron carbide powder. In addition, in the sintering performed simultaneously with the pressurization, the pressurized sintered body can have a denser microstructure.

The preparation method of the above-mentioned ceramic part may be heat-treated in the above-mentioned treatment step A subsequent heat treatment step is then included.

The above-mentioned subsequent heat treatment includes a first treatment performed at a first temperature for 2 hours or longer and a second treatment performed at a second temperature for 2 hours or longer, and the first temperature is a temperature higher than the second temperature.

The first temperature may be 1650°C or higher, and the second temperature may be 1400°C or higher. The heat treatment is more efficiently performed within the above temperature range and when the above primary treatment and the above secondary treatment are performed.

The above-mentioned first temperature may be a temperature of 1650°C to 1950°C. The above-mentioned one-time treatment can be performed for 1 hour to 8 hours.

The above-mentioned second temperature may be a temperature of 1400°C to 1600°C. The above-mentioned secondary treatment may be performed for 1 hour to 8 hours.

When the above-mentioned post-heat treatment is performed at the first temperature and the second temperature, the shape workability of the pressurized sintered body becomes considerably high. This is considered to be due to a change in residual stress or the like caused by heat treatment.

The shape processing in the above-mentioned processing step is a processing process of separating or removing a part of the above-mentioned sintered body to have a desired shape. The above-mentioned shape processing includes ring processing of processing the sintered body into a ring-shaped sintered body, and shape processing of processing the ring-processed sintered body into the shape of a focus ring.

For the above-mentioned shape processing, electrical discharge machining, a water jet method, a laser method, and the like can be used, but the present invention is not limited thereto.

After the desired shape is formed by the above-described shape processing, it may be further subjected to a polishing process. The polishing process described above is intended to physically inhibit particle formation And the process of reducing the surface roughness of ceramic parts. The above-mentioned polishing process can be carried out by a grinding process or the like using a slurry containing industrial diamond or the like, and preferably, in order to prepare a ceramic part having excellent particle suppressing properties, processing so that the maximum height roughness Rt can be 15 μm or less, the arithmetic mean roughness Ra It may be 2 μm or less.

The sintering in the above-mentioned manufacturing method of the ceramic part can be performed by a sintering apparatus 300 (heat-pressing sintering apparatus) as shown in FIG. 4 .

When the raw material 380 is charged into the mold 330 located between the upper pressing part 332 and the lower pressing part 334 in the sintering furnace 310 of the above-mentioned sintering apparatus 300, the pressing part 320 and the like are pressurized and heated so as to be able to Sintering is carried out. At this time, the above-mentioned sintering furnace 310 may be adjusted to a reduced pressure atmosphere, or the process may be performed in a reducing atmosphere. For example, the mold 330 may be a graphite mold, and the upper pressing portion 332 and the lower pressing portion 334 may be a graphite tool (punching).

In addition, the manufacturing method of the above-mentioned ceramic member may be performed in a spark plasma sintering apparatus or the like that applies a pulse current to a raw material.

Plasma Etching Device 500

The plasma etching apparatus 500 according to the embodiment includes the above-described ceramic member 10 in at least a part thereof.

3 , in the above-described plasma etching apparatus 500 , the upper chamber assembly 520 and the chamber housing 510 are connected by a connecting portion 516 , and an electrode plate assembly 524 including electrodes is provided on the upper chamber assembly 520 . The chamber housing 510 is provided with a substrate holder 530 that can be raised and lowered by a vertical moving device 550, and a focus ring, ie, a ceramic member 10, is provided at a position where the wafer to be etched 11 is placed.

The baffle 564 may be disposed around the above-mentioned substrate holder 530 . A shielding ring 562 may also be disposed between the above-mentioned substrate support 530 and the baffle 564 .

The above-described etching apparatus 500 can use a focus ring or the like as the ceramic member 10 as described above to more efficiently perform etching of a substrate.

Plasma etching method

The etching method of a substrate according to the embodiment includes: an arrangement step of positioning an etching object 11 on an etching apparatus in which a focus ring including the above-mentioned ceramic member 10 is arranged; and an etching step of etching the above-mentioned etching object to prepare a substrate.

The above-described arrangement step is a step of placing the etching object on an etching apparatus in which a focus ring as a ceramic member is arranged. The above-mentioned etching apparatus can be used without limitation as long as it is an apparatus for etching substrates applied to electronic products and the like, and for example, a plasma etching apparatus can be used.

The above-mentioned substrate may be applied to the above-mentioned etching apparatus as an etching target, and may be, for example, a substrate for a semiconductor device such as a silicon substrate.

The above-mentioned focus ring and the above-mentioned ceramic member 10 are as described above.

In the above-mentioned arrangement step, the above-mentioned etching object may be located on the upper surface 206 of the above-mentioned setting portion of the above-mentioned focus ring.

The above-mentioned etching step is a step of preparing a substrate by etching the above-mentioned etching object. The above-mentioned etching can be realized by the usual processes applied to the etching process, such as decompression and temperature increase, supply of plasma gas, etching and cleaning.

The above etching can be performed at chamber pressures below 500mTorr, containing fluorinated It is carried out under the conditions of etching gas of compound or chlorine-containing compound and electric power of 500W to 15,000W. The above-mentioned chamber pressure may be 100 mTorr or less, or may be 10 mTorr or more.

The above electric power may be 500W to 15,000W of RF power. The above electric power may be 500W to 8000W of RF power.

The above-mentioned etching time may be 100 hours or more, or may be 200 hours or more. The above-mentioned etching time may be 400 hours or more. The etching time may be 800 hours or more. The above-mentioned etching time may vary depending on the plasma power and etching gas used, and the like.

Hereinafter, the present invention will be described in more detail by way of specific examples. The following examples are only examples to help understand the present invention, and the scope of the present invention is not limited thereto.

Example 1 - Preparation of Ceramic Parts

Preparation of disc-shaped boron carbide sintered body using pressure sintering method

Raw materials and solvents such as boron carbide powder (particle size D50=0.7 μm), phenolic resin (residual carbon is about 41 wt%) and the like are added to the slurry mixer at the content ratio shown in Table 1 below and mixed by ball milling , to prepare slurry raw materials. The slurry feedstock is spray-dried to prepare granular feedstock.

The granular raw material was filled into a mold, and a disk-shaped boron carbide sintered body having a diameter of about 488 mm was prepared by employing the temperature, pressure and time shown in Table 1 below.

Heat treatment 3 in the following heat treatments 1 to 3 was then performed.

As heat treatment 1, the above-mentioned sintered body is heat-treated at a temperature of 1400°C to 1600°C for 2 hours to 5 hours.

As heat treatment 2, the above-mentioned sintered body is subjected to a primary treatment at a temperature of 1650°C to 1950°C for 2 hours to 3.5 hours, and a secondary treatment of the above-mentioned sintered body at a temperature of 1400°C to 1600°C for 3 hours to 6 hours.

As heat treatment 3, the above-mentioned sintered body is subjected to a primary treatment at a temperature of 1650°C to 1950°C for 4 hours to 6 hours, and a secondary treatment of the above-mentioned sintered body at a temperature of 1400°C to 1600°C for 3 hours to 6 hours.

Example 2 - Preparation of Ceramic Parts

A boron carbide sintered body was prepared in the same manner as in Example 1 above, except that raw materials satisfying the content ratio and zeta potential shown in Table 1 were used and the sintering conditions shown in Table 1 were used .

Example 3 - Preparation of Ceramic Parts

A boron carbide sintered body was prepared in the same manner as in Example 1 above, except that raw materials satisfying the content ratio and zeta potential shown in Table 1 were used in the above-mentioned Example 1.

*Phenolic resin was used as additive 1, and boron oxide was used as additive 2.

Experimental example - zeta potential measurement of raw material for pulping

The slurry-like raw materials of the above-mentioned Examples 1 to 3 were diluted 2 to 3 drops in 20 mL of ethanol solvent, respectively, subdivided into a flow cell, and the zeta potential was measured. The results are shown in Table 1 and the like. The temperature of the above-mentioned solvent was 25° C., the refractive index was 1.36, the viscosity was 1.10 cP, and the dielectric constant was 25.

Experimental example - Raman analysis of sintered body and boron carbide single crystal

Raman analysis was performed under the following measurement conditions using a Raman spectrometer DxR2 from Thermo Scientific, and the results are shown in FIGS. 7 to 16 and Table 2 and the like. In the photographs and spectra shown in FIGS. 7 to 16 , 1, 2, and 3 represent composite materials.

Excitation wavelength: 532nm

Power: 10mW

Repetition rate: 6Hz

Scanning range: 6×6μm

Pixel size: 2.0μm

Number of spectrum measurements: 16

*Iab/Icd: In the Raman shift spectrum, the sum of the intensity Ia of the peak around 481 cm ^-1 and the intensity Ib of the peak around 534 cm ^-1 Iab and the intensity Ic of the peak around 270 cm -1 and the peak at 320 cm ^-1 The ratio of the sum of the intensities Id of the peaks around ^-1 to the Icd

*Ie/If: The ratio of the intensity Ie of the G-band peak to the intensity If of the D-band peak in the Raman shift spectrum

Referring to Tables 1 and 2 and FIGS. 7 to 16 , the shapes of the composite material and the matrix filled while being in contact with the composite material can be confirmed from the cross-sectional photographs of the prepared sintered body, and it can be seen that the carbon-based material is included in the composite material. and one or more of boron carbide-based materials.

It was confirmed that the ceramic member according to the embodiment was made of a slurry-like raw material having a zeta potential of 15 mV or more, and that the boron carbide-based material contained in the matrix had the above-mentioned Iab/Icd ratio of 1 to 1.8 with respect to the boron carbide single crystal, and It is formed in the state of being in contact with the composite material. It was confirmed that the above-mentioned Examples had excellent workability and corrosion resistance, and did not generate cracks or the like between the matrix and the composite material.

As described above, although the preferred embodiments of the present invention have been described in detail, it should be understood that the scope of the present invention is not limited to the above-described embodiments, but is a technique in the art using the basic concepts of the present invention defined in the claims. Various changes or deformations of personnel belong to the scope of the present invention.

1: Etching objects

10: Ceramic parts

106: Above the main body

156: Above the inclined part

206: Above the placement department

I', I": Section

Claims (10)

A ceramic component is a ceramic component applied to a plasma etching device, wherein the surface of the ceramic component includes a matrix and a composite material arranged in contact with the matrix in the matrix, and the specific resistance of the ceramic component is 10 ^-1 Ω. cm to 20Ω. cm, the matrix includes a boron carbide-based material, the composite material includes one selected from the group consisting of a boron carbide-based material, a carbon-based material, and a combination thereof, the size of the composite material is 40 μm or less, and the composite material In the Raman shift spectrum of the boron carbide-based material measured by Raman spectroscopy, the sum of the intensity Ia of the peak around 481 cm ^-1 and the intensity Ib of the peak around 534 cm ^-1 Iab and at 270 cm ^-1 The ratio Iab/Icd of the sum of the intensity Ic of the peak in the vicinity and the intensity Id of the peak in the vicinity of 320 cm ⁻¹ is 1 to 1.8, and the carbon-based material of the composite material has a Raman measured by Raman spectroscopy. In the shift spectrum, the ratio Ie/If of the intensity Ie of the G-band peak to the intensity If of the D-band peak is 0.2 to 2. The ceramic part of claim 1, wherein the boron carbide-based material of the matrix has an intensity Ia of a peak near 481 cm ⁻¹ and a peak near 534 cm ⁻¹ in an intensity spectrum measured by Raman spectroscopy. The ratio Iab/Icd of the total intensity Iab of the peak intensities Ib and the sum of the intensity Ic of the peak near 270 cm ⁻¹ and the total intensity Id of the peak intensity Id of the peak near 320 cm ⁻¹ was 1.1 to 2.3. The ceramic part according to claim 1, wherein the average diameter of pores observed on the surface or cross section of the ceramic part is 5 μm or less. The ceramic component of claim 1, wherein the ceramic component includes a seating portion having a first height from a reference surface and a main body portion having a second height from the reference surface, the seating portion including a seating portion for seating an etching object The upper surface of the seating part, the main body part includes the upper surface of the main body part which is directly etched by plasma. The ceramic component according to claim 4, further comprising an inclined portion between the seating portion and the main body portion, the inclined portion including an upper surface of the inclined portion connecting the upper surface of the seating portion and the upper surface of the main body portion. The ceramic member according to claim 1, wherein the ceramic member has a bending strength of 300 MPa or more. The ceramic part according to claim 1, wherein the content of the carbon-based material is 0.5% by weight or more with respect to the total content of the ceramic part. A ceramic component is a ceramic component applied to a plasma etching device, wherein the surface of the ceramic component includes a matrix and a composite material arranged in contact with the matrix in the matrix, and the specific resistance of the ceramic component is 10 ^-1 Ω. cm to 20Ω. cm, the matrix includes a boron carbide-based material, the composite material includes one selected from the group consisting of a boron carbide-based material, boron oxide, and combinations thereof, the size of the composite material is 40 μm or less, and the composite material has In the Raman shift spectrum of the boron carbide-based material measured by Raman spectroscopy, the sum of the intensity Ia of the peak near 481 cm ^-1 and the intensity Ib of the peak near 534 cm ^-1 and the sum of the intensity Iab of the peak near 270 cm ^-1 The ratio Iab/Icd of the sum Icd of the intensity Ic of the peak and the intensity Id of the peak around 320 cm ⁻¹ is 1 to 1.8. A preparation method of a ceramic part, comprising: a preparation step of preparing a raw material including i) a raw material comprising boron carbide, ii) a raw material comprising boron carbide, boron oxide and a carbon-based material, and iii) a raw material comprising boron carbide and a carbon-based material. A raw material; and a processing step of preparing a ceramic part by sintering and shape-processing the raw material, wherein the preparing step includes a process of preparing raw material particles by slurrying and granulating the raw material, The zeta potential of the raw material is +15mV or more, wherein the surface of the ceramic part includes a matrix and a composite material arranged in contact with the matrix in the matrix, wherein in the Raman shift spectrum determined by Raman spectroscopy , the boron carbide-based material of the composite has an Iab/Icd ratio of 1 to 1.8, where Iab is the sum of the intensity Ia of the peak around 481 cm ^-1 and the intensity Ib of the peak around 534 cm ^-1 , where Icd is The sum of the intensity Ic of the peak around 270 cm- ¹ and the intensity Id of the peak around 320 cm ^-1 . A plasma etching device, comprising the ceramic part of claim 1.

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