KR20200009885A - Semiconductor device package - Google Patents

Abstract

According to an embodiment of the present invention, provided is a semiconductor element package which comprises: a substrate; a reflection member arranged on the substrate and including a first through hole and a second through hole spaced apart from the first through hole; a semiconductor element arranged in the first through hole; an electrode unit including a base part arranged between the substrate and the reflection member and an extension part extended upwards from the base part; and a wavelength conversion layer arranged on the semiconductor element in the first through hole. The extension part is arranged in the second through hole and a rate between an average width and a width of the extension part is 1:0.98 to 1:1.02.

Description

Semiconductor device package {SEMICONDUCTOR DEVICE PACKAGE}

Embodiments relate to a semiconductor device package.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy-to-adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductors have been developed through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors, and low power consumption, semi-permanent life, and quick response compared to conventional light sources such as fluorescent and incandescent lamps. It has the advantages of speed, safety and environmental friendliness.

In addition, when a light receiving device such as a photo detector or a solar cell is also manufactured using a group 3-5 or 2-6 compound semiconductor material of a semiconductor, the development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelength ranges, from gamma rays to radio wavelength ranges, can be used. It also has the advantages of fast response speed, safety, environmental friendliness and easy control of device materials, making it easy to use in power control or microwave circuits or communication modules.

Therefore, a white light emitting device which can replace a LED backlight, a fluorescent lamp or an incandescent bulb, which replaces a cold cathode tube (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights, and sensors that detect gas or fire. In addition, applications can be extended to high frequency application circuits, other power control devices, and communication modules.

Meanwhile, according to the prior art, a product using a light emitting diode is researched and released as a product, and the light emitting diode is increasingly used as a light source for lighting devices such as various lamps, liquid crystal display devices, electronic signs, street lamps, and headlamps used indoors and outdoors. Doing.

However, in the prior art, there is a problem that current spreading is lowered and electrical reliability is lowered in a semiconductor device package using a semiconductor device.

In addition, there is a limit that the thermal reliability is lowered due to the heat dissipation issue of the semiconductor device package.

Embodiments provide a semiconductor device package with improved current spreading.

In addition, a semiconductor device package having improved reliability is provided.

In addition, the heat dissipation efficiency is improved to provide a semiconductor device package that provides thermal stability.

In addition, it provides a semiconductor device package that can reduce the process cost and miniaturization.

The problem to be solved in the examples is not limited thereto, and the object or effect that can be grasped from the solution means or the embodiment described below will be included.

The semiconductor device package according to the embodiment includes a substrate; A reflection member disposed on the substrate and including a first through hole and a second through hole spaced apart from the first through hole; A semiconductor device disposed in the first through hole; An electrode part including a base part disposed between the substrate and the reflective member and an extension part extending upward from the base part; And a wavelength conversion layer disposed on the semiconductor element in the first through hole, wherein the extension part is disposed in the second through hole, and the ratio between the average width and the minimum width of the extension part and the average width and the maximum width are included. The ratio of livers is from 1: 0.98 to 1: 1.02.

The length ratio of the height of the extension to the width of the extension may be 1: 3 to 1:13.

The base unit may include a first base electrode; And a second base electrode spaced apart from the first base electrode.

The first base electrode may include a first vertical portion disposed on one side of the substrate; A first protrusion extending from the first vertical portion toward the second base electrode; A second protrusion extending from the first protrusion toward the second base electrode; A third protrusion extending from the first vertical portion toward the second base electrode and disposed below the first protrusion; It may include a fourth protrusion extending from the first vertical portion toward the second base electrode and disposed below the third protrusion.

The second base electrode may include a second vertical portion disposed on the other side of the substrate; A fourth protrusion extending from the first vertical portion toward the first base electrode; A fifth protrusion extending from the fourth protrusion toward the first base electrode; A sixth protrusion extending from the second vertical portion toward the first base electrode and disposed below the fourth protrusion; A seventh protrusion extending from the second vertical portion toward the first base electrode and disposed below the sixth protrusion; And an eighth protrusion extending from the second vertical portion toward the first base electrode and disposed below the seventh protrusion.

The extension part may include a first extension electrode and a second extension electrode, the first extension electrode may be disposed on the first protrusion, and the second extension electrode may be disposed on the fourth protrusion.

The third protrusion may be spaced apart from the second protrusion and the fourth protrusion, and the seventh protrusion may be spaced apart from the fifth protrusion and the eighth protrusion.

Disposed between at least one of the third protrusion and the second protrusion and between the third protrusion and the seventh protrusion, or between the seventh protrusion and the fifth protrusion and between the seventh protrusion and the eighth protrusion. The semiconductor device may further include a groove disposed in at least one, and the semiconductor device may be disposed between the third protrusion and the seventh protrusion, and the minimum distance between the second protrusion and the sixth protrusion may be greater than the third protrusion and the third protrusion. 7 may be less than the distance between protrusions.

The base part may include a third base electrode disposed between the first base electrode and the second base electrode and spaced apart from the first base electrode and the second base electrode. 3 vertical sections; A ninth protrusion extending from the third vertical portion toward the first base electrode; A tenth protrusion extending from the third vertical portion toward the second base electrode; An eleventh protrusion extending from the third vertical portion toward the first base electrode and disposed below the ninth protrusion; And a twelfth protrusion extending from the third vertical portion toward the second base electrode and disposed below the tenth protrusion.

The ninth protrusion may be disposed to face the third protrusion, and the eleventh protrusion may be disposed to face the fourth protrusion.

According to the embodiment, it is possible to implement a semiconductor device package with improved current spreading.

In addition, it is possible to manufacture a semiconductor device package with improved reliability.

In addition, the heat dissipation efficiency is improved, it is possible to manufacture a semiconductor device package that provides thermal stability.

In addition, it is possible to manufacture a semiconductor device package that can reduce the process cost and miniaturization.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and will be more readily understood in the course of describing specific embodiments of the present invention.

1 is a conceptual diagram of a semiconductor device package according to an embodiment,
FIG. 2 is a cross-sectional view taken along line AA ′ in FIG. 1;
3A is an enlarged view of a portion A in FIG. 2,
3B is an enlarged view of a portion B in FIG. 2,
4 is a view illustrating an electrical flow of a semiconductor device package according to an embodiment;
5 is a conceptual diagram of a semiconductor device according to an embodiment;
6 is a plan view of a semiconductor device package according to an embodiment;
FIG. 7 is a cross-sectional view taken along line II ′ in FIG. 6;
8 is a modification of FIG. 1,
9 is another modified example of FIG.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated and described in the drawings. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Terms including ordinal numbers, such as second and first, may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component. The term and / or includes a combination of a plurality of related items or any item of a plurality of related items.

When a component is said to be "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that another component may be present in the middle. Should be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art, and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings, and the same or corresponding components will be given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted.

1 is a conceptual diagram of a semiconductor device package according to an embodiment, and FIG. 2 is a cross-sectional view taken along line AA ′ of FIG. 1.

1 and 2, a semiconductor device package 10 according to an embodiment may include a substrate 100, a reflective member 200 disposed on the substrate 100, a reflective member 200, and a substrate 100. An electrode part 300 disposed on the semiconductor device 400, a semiconductor device 400 disposed on the electrode part 300, a wavelength conversion layer 500 disposed on the semiconductor device 400, and a connection layer disposed below the substrate 100. 600 may be included.

First, the substrate 100 may be a resin material such as epoxy or silicon, a synthetic resin material such as polyphthalamide (PPA), a ceramic substrate 100, an insulating substrate 100 such as a plastic leaded chip carrier (PLCC), or white insulation. It can be formed by including a layer. For example, the substrate 100 may include AlN.

In addition, the substrate 100 may have various shapes including a rectangle, a triangle, a polygon, a circle, a curved surface, and the like, but is not limited thereto.

The reflective member 200 may be disposed on the substrate 100. For example, the reflective member 200 may be disposed in the vertical direction on the substrate 100. Here, the vertical direction is the Z axis direction. The horizontal direction is the X-axis direction in a direction perpendicular to the Z-axis direction. And the direction perpendicular to the vertical direction and the horizontal direction is the Y-axis direction. Hereinafter, the X-axis direction will be described as the first direction, the Y-axis direction as the second direction, and the Z-axis direction as the third direction.

However, the above-described arrangement is only an example for convenience of description, and does not mean that the first, second, and third directions should be disposed vertically. That is, it should be noted that the first direction and the second direction may be disposed to be inclined with each other at an angle other than 90 degrees, and the third direction may be disposed to be inclined at an angle that is not 90 degrees with both the first direction and the second direction.

In addition, the reflective member 200 may be made of a material having a high reflectance. Specifically, the reflective member 200 may include any one of polyphthalamide (PPA), poly-cyclo-hecylene dimethyl terephthalate (PCT), white white silicone, and white white epoxy molding compound (EMC). have. However, it is not limited to these materials.

The reflective member 200 may include a first through hole H1 and a second through hole H2 spaced apart from the first through hole H1. In detail, the reflective member 200 may be disposed on the substrate 100 and include a first through hole H1 and a second through hole H2 having an upper portion opened in the reflective member 200. In addition, a plurality of first through holes H1 and second through holes H2 may exist in the reflective member 200.

First, the first through hole H1 may be disposed above the substrate 100. For example, the first through hole H1 may be positioned above the first vertical line, which is a virtual vertical line that bisects the substrate 100 in the second direction (Y direction). The second through hole H2 may be disposed below the substrate 100. For example, the second through hole H2 may be located below the first vertical line.

In addition, a plurality of first through holes H1 may be provided. Hereinafter, the first through hole H1 will be described based on two cases.

An extension part 320 of the electrode part 300, which will be described later, is disposed in the first through hole H1, and the semiconductor device 400 and the wavelength conversion layer 500, which will be described later, are disposed in the second through hole H2. Can be arranged. Detailed description will be described later.

In addition, at least one second through hole H2 may be provided. For example, the number of second through holes H2 may be changed by the number of semiconductor devices 400 to be described later. Hereinafter, a description will be given based on the case where three second through holes H2 are three.

The second through hole H2 may be spaced apart from the first through hole H1 in the first direction (X direction). However, the plurality of second through holes H2 may be spaced apart in the second direction (Y-axis direction).

The electrode unit 300 may be disposed on the substrate 100. The electrode unit 300 may be made of a conductive material to connect the semiconductor device 400 to be described later and an external electrode.

For example, the electrode unit 300 may include a metal. For example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), Phosphorus (P) may include at least one, but is not limited to such a material.

In addition, the electrode part 300 may include a base part 310 disposed between the substrate 100 and the reflective member 200, and an extension part 320 extending upward from the base part 310 (the third direction). It may include.

First, the base part 310 may be disposed between the substrate 100 and the reflective member 200, and may include a first base electrode 311 and a second base electrode 312. The first base electrode 311 and the second base electrode 312 may be spaced apart from each other on the substrate 100. In addition, the base unit 310 may further include a third base electrode 313.

Since the first base electrode 311 and the second base electrode 312 are injected with power from the outside through the extension part 320, each of the first base electrode 311 and the second base electrode 312 may have different polarities. The third base electrode 313 may be disposed between the first base electrode 311 and the second base electrode 312, and may be spaced apart from the first base electrode 311 and the second base electrode 312.

In addition, the first base electrode 311, the second base electrode 312, and the third base electrode 313 may be electrically connected to each other through the semiconductor device 400 even if they are spaced apart from each other. When the plurality of semiconductor devices 400 are included, the third base electrode 313 is disposed between the first base electrode 311 and the second base electrode 312, so that the first base electrode 311 and the second base electrode 312 are disposed. The base electrode 312 and the semiconductor device 400 may be electrically connected to each other.

The extension part 320 may be disposed on the base part 310 and may extend in the third direction from the base part 310. In addition, the extension part 320 may be disposed in the first through hole H1, and an upper surface thereof may be exposed to the outside. In this case, the extension part 310 means all of the areas electrically connected to the base part 310 from the bottom contacting the upper surface of the base part 310 to the upper part exposed to the outside.

In addition, the first base electrode 311 and the second base electrode 312 may be electrically connected to the first extension electrode 321 and the second extension electrode 322 of the extension 320, respectively. Thus, power may be supplied from the outside through the extension 320.

That is, the first extension electrode 321 may be disposed on the first base electrode 311, and the second extension electrode 322 may be disposed on the second base electrode 312.

The extension 320 may be integrally formed with the base 310. Accordingly, a layer for coupling the extension part 320 and the base part 310 may not be additionally disposed between the extension part 320 and the base part 310. As a result, the base 310 and the extension 320 may be integrally formed of a single material, and the spreading of the current flowing therethrough may be improved. In addition, this configuration can reduce the process of placing the extension 320 on the base portion can provide cost savings and process time reduction. In addition, when there is an adhesive material such as solder between the extension part 320 and the base part 310, there is a problem in that electrical characteristics due to voids of the solder are deteriorated. You can solve the problem.

In addition, the extension 320 may include the heights of the first intermediate layer IS, the semiconductor device 400, the second intermediate layer BS, and the wavelength conversion layer 500, which are described later in height. May be the same. However, the process may have a predetermined error range.

In addition, since the upper surface of the extension 320 is located above the upper surface of the semiconductor device 400, a current may be injected through the upper portion of the semiconductor device package. As a result, the present invention can be easily applied even in an environment in which structural constraints such as a structure requiring bonding to an external device only on the upper surface of the semiconductor device package exist.

The semiconductor device 400 may be disposed on the substrate 100 and the electrode unit 300, and may be disposed in the second through hole H2. The semiconductor device 400 may be plural in number, and may include a flip chip structure. However, it is not limited to this form.

The semiconductor device 400 may emit at least one of ultraviolet light, blue light, green light, and red light. For example, the semiconductor device 400 may emit light having a short wavelength such as ultraviolet light or blue light.

In addition, the semiconductor device 400 may be excited through the wavelength conversion layer 500 to be described later to emit light having a shorter wavelength than light. The semiconductor device 400 is made of a compound semiconductor of group III-V elements, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP-based semiconductor materials, The light having a predetermined color by the semiconductor material may be emitted. The semiconductor device 400 will be described in detail later with reference to FIG. 5.

The first intermediate layer IS may be disposed between the semiconductor device 400 and the first base electrode 311. In addition, when the third base electrode 313 is present, the first intermediate layer IS may be disposed between the semiconductor device 400 and the third base electrode 313. As a result, the first intermediate layer IS may bond the semiconductor device 400 and the first base electrode 311 to each other.

The first intermediate layer IS may be made of a conductive material. For example, the first intermediate layer IS may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.

The wavelength conversion layer 500 may be disposed on the semiconductor device 400. The wavelength conversion layer 500 may convert a wavelength of light emitted from the semiconductor device 400 to provide predetermined light to the outside. For example, the wavelength conversion layer 500 may absorb light emitted from the semiconductor device 400 and convert the light into white light.

The wavelength conversion layer 500 may include at least one of phosphor and QD. In addition, the wavelength conversion layer 500 may include a polymer resin in which wavelength conversion particles are dispersed, and the polymer resin may include at least one of a light transmitting epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin. Can be. Hereinafter, the wavelength conversion layer 500 will be described as a phosphor.

The wavelength conversion layer 500 may include any one of YAG-based, TAG-based, Silicate-based, Sulfide-based, or Nitride-based fluorescent materials, but is not limited thereto. For example, the wavelength conversion layer 500 may include YAG and TAG fluorescent materials (Y, Tb, Lu, Sc, La, Gd, Sm) ₃ (Al, Ga, In, Si, Fe) ₅ (O, S) ₁₂ It may be selected from: Ce, and the Silicate fluorescent material may be selected from (Sr, Ba, Ca, Mg) ₂ SiO ₄ : (Eu, F, Cl). In addition, the sulfide-based fluorescent material can be selected from (Ca, Sr) S: Eu, (Sr, Ca, Ba) (Al, Ga) ₂ S ₄ : Eu, and the Nitride-based phosphor is (Sr, Ca, Si, Al , O) N: Eu (eg, CaAlSiN ₄ : Eu β-SiAlON: Eu) or Ca-α SiAlON: Eu-based (Cax, My) (Si, Al) ₁₂ (O, N) ₁₆ . In this case, M is at least one of Eu, Tb, Yb or Er and may be selected from phosphor components satisfying 0.05 <(x + y) <0.3, 0.02 <x <0.27 and 0.03 <y <0.3.

The second intermediate layer BS may be disposed between the wavelength conversion layer 500 and the semiconductor device 400. Accordingly, since the second intermediate layer BS is a layer through which light emitted from the semiconductor device 400 passes, it may be made of a transparent material. For example, the second intermediate layer BS may include any one of Spin-On-Glass (SOG), Sol-Gel, ITO, ZnO, SiOx, and white silicone.

The second intermediate layer BS may be disposed in the second through hole H2. In addition, a plurality of second intermediate layers BS may be provided according to the number of second through holes H2.

The connection layer 600 may be disposed under the substrate 100 to face the base 310 of the electrode 300 on the substrate 100. In this configuration, the connection layer 600 may be electrically separated from the electrode 300 by the substrate 100.

The connection layer 600 may overlap the substrate 100 in the third direction (Z direction), and the area of the upper surface may be smaller than the area of the lower surface of the substrate 100.

In addition, the connection layer 600 may bond components to each other in the substrate 100 and the various devices of the semiconductor device package 10 according to the embodiment. The connection layer 600 may be made of a material having heat dissipation. For example, the connection layer 600 may include any one or more of Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and the like. However, the connection layer 600 may be variously applied according to the type of the device located under the semiconductor device package 10, but is not limited to the above materials.

In addition, the connection layer 600 may be electrically separated from the base portion 310 by the substrate 100 to prevent the heat dissipation effect from being reduced due to the heat generated by the electrical flow.

3A is an enlarged view of a portion A in FIG. 2, and FIG. 3B is an enlarged view of a portion B in FIG. 2.

Referring to FIG. 3A, the extension part 320 may be disposed to overlap the extension part 320 in the third direction. However, as described above, the extension 320 may be disposed on one side of the substrate 100 to be spaced apart from the semiconductor device 400 and the substrate 100.

In the present specification, the height will be described as the length in the third direction (Z direction), the width in the second direction (Y direction), and the length in the first direction (X direction).

First, the extension part 320 may have an upper surface having a square shape, and may have the same length W in the first direction and width W1 in the second direction (see FIG. 6). Hereinafter, the length La in the first direction of the extension 320 will be described based on the width W1 in the second direction. In addition, the width of the extension 320 refers to the width of one extension electrode.

First, the width W1 in the second direction of the extension 320 may be 500 μm to 2000 μm. The extension 320 may have a height h1 of 150 μm to 300 μm in the third direction.

The extension 320 may have a length ratio of 1: 3 to 1:14 between the height h1 in the third direction and the width W1 in the second direction. When the length ratio is smaller than 1: 3, the width of the extension part 320 is small compared to the height of the extension part 320 in the third direction, which makes it difficult to connect the external electrode. In addition, when the length ratio is greater than 1:14, the width of the extension 320 is increased to reduce the space for the semiconductor device 400, thereby reducing the efficiency of light emitted to the upper portion of the substrate 100. As described above, since the extension part 320 is integrally formed with the base part 310, the ratio of the width between the average width and the width may be 1: 0.98 to 1: 1.02. Here, the average width may be an arithmetic mean value of the widths measured over the entire height of the extension 320. Further, the ratio of the width between the average width and the width represents the ratio between the average width and the maximum width and the ratio between the average width and the minimum width.

And the ratio of the width may preferably be 1: 0.99 to 1: 1.01, more preferably 1: 0.995 to 1: 1.005.

When the ratio of the width is smaller than 1: 0.98, there may be a problem that the luminous flux decreases due to an increase in the electrical resistance of a portion of the extension part 320 and a decrease in current spreading to the semiconductor device. In addition, when the width ratio is greater than 1: 1.02, there may be a limit in which an electrical short occurs between the extension electrodes 321 and 322 adjacent to the extension part 320. For example, there may be a problem in which the first extension electrode 321 is electrically connected to the second base electrode 312 and finally electrically connected to the second extension electrode 322.

In addition, the width-to-width ratio may be equally applied to the length La of the extension 320.

Referring to FIG. 3B, the height h2 of the substrate 100 may be 300 μm to 500 μm.

The height h3 of the base portion may be a height ratio of the height h2 of the substrate 100 to 1:10 to 1:50. When the height ratio is less than 1:10, there is a limit that the heat radiation efficiency through the substrate 100 is lowered. And when the height ratio is greater than 1:50, there is a problem that the process of the base portion is difficult and the current spreading through the base portion 310 is reduced.

In addition, the height h4 of the semiconductor device 400 may be a height ratio of the height h2 of the substrate 100 to 1: 1.5 to 1: 5. When the height ratio is less than 1: 1.5, there is a problem that the height of the extension 320 is increased so that the electrical resistance increases and current spreading is lowered. In addition, when the height ratio is greater than 1: 5, there is a limit that the light output from the semiconductor device 400 is lowered by the extension part 320 and the reflective member 200 surrounding the extension part 320. exist.

In addition, the height h5 of the wavelength conversion layer 500 may be a height ratio 1: 1.5 to 1: 3 of the height h1 (see FIG. 3A) of the extension 320. When the height ratio is less than 1: 1.5, the height of the wavelength conversion layer 500 is increased so that the light output from the semiconductor device 400 is reflected or absorbed in the wavelength conversion layer 500, thereby degrading light output. If the height ratio is greater than 1: 3, the height of the extension 320 increases in correspondence with the height of the phosphor, and thus a current spreading decrease occurs due to an increase in the electrical resistance.

4 is a diagram illustrating an electrical flow of a semiconductor device package according to an embodiment, and FIG. 5 is a conceptual diagram of a semiconductor device 400 according to an embodiment.

Referring to FIG. 4, in the semiconductor device package according to the embodiment, a current is formed by the first extension electrode 321, the first base electrode 311, the third base electrode 313, the second base electrode 312 and the second The extension electrode 322 may flow in order. However, the current may flow in the above-described order according to the polarity of the power supplied to the extension 320.

Hereinafter, the current flows from the first extension electrode 321 to the second extension electrode 322. In addition, the semiconductor device 400 will be described as including a first semiconductor device 400, a second semiconductor device 400, and a third semiconductor device 400. In addition, the third base electrode 313 will be described as including a 3-1 base electrode 313-1 and a 3-2 base electrode 313-2.

First, the current injected into the first extension electrode 321 may be injected into the first base electrode 311 connected under the first extension electrode 321. In addition, the current injected into the first base electrode 311 may flow down from the first base electrode 311 to a region in contact with the first semiconductor device 400 (C1). As a result, a current may be supplied to the first semiconductor device 400. That is, the first semiconductor device 400 may be in contact with the first base electrode 311 to inject a current.

The first semiconductor device 400 may be in contact with the first base electrode 311 and the third base electrode 313 adjacent to the first base electrode 311. Accordingly, the current injected into the first semiconductor device 400 through the first base electrode 311 may flow through the first semiconductor device 400 to the 3-1 base electrode 313-1 (C2). .

In addition, the current injected into the 3-1 base electrode 313-1 may flow to a region in contact with the second semiconductor device 400 (C3). Accordingly, the current may be supplied to the second semiconductor device 400. That is, the second semiconductor device 400 may be in contact with the 3-1 base electrode 313-1 to inject a current.

The second semiconductor device 400 may be in contact with the 3-1 base electrode 313-1 and the 3-2 base electrode 313-2 adjacent to the 3-1 base electrode 313-1. . Accordingly, the current injected into the second semiconductor device 400 through the 3-1 base electrode 313-1 flows through the second semiconductor device 400 to the 3-2 base electrode 313-2. It can be (C4).

In addition, the current injected into the 3-2 base electrode 313-2 may flow to an area in contact with the third semiconductor device 400 (C5). Accordingly, a current may be injected into the third semiconductor device 400. The third semiconductor device 400 may contact the second base electrode 312 adjacent to the third-2 base electrode 313-2 and the third-2 base electrode 313-2. Accordingly, the current injected into the third semiconductor device 400 through the third-2 base electrode 313-2 may flow through the third semiconductor device 400 to the second base electrode 312 (C6). ).

The current injected into the second base electrode 312 through the third semiconductor device 400 may flow to the second extension electrode 322 (C7). As a result, the current injected into the first extension electrode 321 flows through the plurality of semiconductor devices 400a, 400b, and 400c to the second extension electrode 322, and the flowing direction may be U-shaped.

In addition, the direction C1 of the current flowing through the first extension electrode 321 to the first base electrode 311 may be directed from the upper side to the lower side. Specifically, it may be in the first-second direction (X2 direction). In addition, the direction C7 of the current flowing through the second base electrode 312 to the second extension electrode 322 may be a direction from the bottom to the top. Specifically, it may be a first-first direction (X1 direction). In this case, the first-first direction may be a direction from the first base electrode 311 toward the second base electrode 312 in the first direction.

Accordingly, the direction (C1) of the current flowing through the first extension electrode 321 to the first base electrode 311 and the direction of the current flowing through the second base electrode 312 to the second extension electrode 322 ( C7) may be opposite to each other.

In addition, the direction of the current flowing through the third base electrode 313 disposed between the first base electrode 311 and the second base electrode 312 moves the second base electrode 312 from the first base electrode 311. In the facing direction, it may be a 2-1 direction (Y1 direction).

However, as described above, a third electrode disposed between the first base electrode 311 and the second base electrode 312 according to the polarity of the power injected into the first extension electrode 321 and the second extension electrode 322. The direction of the current flowing through the base electrode 313 may be the second-second direction Y1.

In addition, since the direction of the current through the first extension electrode 321 and the second extension electrode 322 is the third direction (Z direction), the first base electrode 311, the second base electrode 312 and the third The base electrode 313 may be perpendicular to the direction of the current.

Referring to FIG. 5, the semiconductor device 400 according to the embodiment includes a light transmissive substrate 410, a semiconductor structure 420, a first electrode 430, a second electrode 440, and an insulating layer 450. . Materials of the first electrode layer 441 and the insulating layer 450 will be referred to the above description.

First, the semiconductor structure 420 may include a first conductivity type semiconductor layer 421, an active layer 422, and a second conductivity type semiconductor layer 423. In this case, the first conductive semiconductor layer 421, the active layer 422, and the second conductive semiconductor layer 423 may be disposed in the third direction (Z direction) described above. The first conductive semiconductor layer 421 may be formed of a compound semiconductor such as a group III-V group or a group II-VI, and may be doped with a first dopant. The first conductivity-type semiconductor layer 421 is a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0≤y1≤1, 0≤x1 + y1≤1), for example, GaN, AlGaN, InGaN, InAlGaN and the like can be selected. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 421 doped with the first dopant may be an n-type semiconductor layer.

The active layer 422 may be disposed between the first conductivity type semiconductor layer 421 and the second conductivity type semiconductor layer 423. The active layer 422 may be a layer in which electrons (or holes) injected through the first conductive semiconductor layer 421 and holes (or electrons) injected through the second conductive semiconductor layer 423 are recombined. As the electrons and holes recombine, the active layer 422 transitions to a low energy level, and may generate light having a wavelength corresponding to the bandgap energy of the well layer to be described later. The wavelength of the light having the greatest intensity among the wavelengths of the light emitted by the semiconductor device 400 may be ultraviolet rays, and the ultraviolet rays may be the above-described near ultraviolet rays, deep ultraviolet rays, or deep ultraviolet rays.

The active layer 422 may have any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum line structure, and the active layer 422 The structure of is not limited to this.

The second conductive semiconductor layer 423 is formed on the active layer 422, and may be implemented as a compound semiconductor such as a group III-V group or a group II-VI. The second conductive semiconductor layer 423 may include a second conductive semiconductor layer 423. Dopants may be doped. The second conductive semiconductor layer 423 is a semiconductor material having a composition formula of Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1) or AlInN, AlGaAs, GaP, GaAs It may be formed of a material selected from GaAsP, AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer 423 doped with the second dopant may be a p-type semiconductor layer.

The semiconductor device 400 includes a first electrode 430 and a second electrode 440 under the semiconductor structure 420. The first electrode 430 includes a first contact layer 431, a first connection layer 432, and a first pad layer 433, and the first contact layer 431 includes a first conductive semiconductor layer ( The first connection layer 432 may be in contact with the 421 and may be disposed between the first contact layer 431 and the first pad layer 433.

The first contact layer 431, the first connection layer 432, and the first pad layer 433 may be disposed in a single layer or a multilayer structure. The first contact layer 431 includes at least one of Cr, Ti, Ta and optional alloys thereof, and the first connection layer 432 includes at least one of Al, Ti, Fe, Ni and optional alloys thereof. The first pad layer 433 may include at least one of In, Sn, Ni, Au, and an optional alloy thereof. However, it is not limited to these materials.

In addition, the second electrode 440 may include a second contact layer 441, a second connection layer 442, and a second pad layer 443, and the second contact layer 441 may be a second conductive semiconductor. The second connection layer 442 is disposed between the layer 423 and the second connection layer 442 is connected between the second contact layer 441 and the second pad layer 443.

The second contact layer 441, the second connection layer 442, and the second pad layer 443 may be disposed in a single layer or a multilayer structure. And the second contact layer 441 includes at least one of Cr, Ti, Ta, and optional alloys thereof, and the second connection layer 442 includes Al, Ti, Cu, Ag, Pt, and optional alloys thereof. And at least one of the second pad layer 443 may include at least one of In, Sn, Cu, Au, and an optional alloy thereof.

In the semiconductor device 400, a support member 460 may be disposed under the semiconductor structure 420. The support member 460 may be made of an insulating material. For example, the support member 460 is formed of a resin layer such as silicon or epoxy. As another example, the insulating material may include a paste or an insulating ink. Insulating materials include polyacrylate resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, polyphenylene ether resin (PPE), polyphenilene oxide resin (PPO), polyphenylenesulfides resin, cyanate ester resin, benzocyclobutene ( BCB), Polyamido-amine Dendrimers (PAMAM), and Polypropylene-imine, Dendrimers (PPI), and resins including PAMAM-OS (organosilicon) having PAMAM internal structure and organo-silicon exterior, alone or in combination thereof. Can be. However, it is not limited to these materials.

As described above, the semiconductor device 400 may flow through the semiconductor structure 420 and the second electrode 440 in the first electrode 430. For example, in FIG. 4, in the 4-1 semiconductor device 400a, the first pad layer 433 is in contact with the first base electrode, and the second pad layer 443 is in contact with the 2-1 base electrode. Can flow in one C2 direction.

In addition, the semiconductor device 400 according to the embodiment may emit light upward through the transmissive substrate 410. For example, the semiconductor device 400 may have a flip structure.

6 is a plan view of a semiconductor device package according to an embodiment, and FIG. 7 is a cross-sectional view taken along line II ′ in FIG. 6.

Referring to FIG. 6, the first base electrode 311 may be arranged in parallel with the first direction (X direction) and in the 2-1st direction (Y1 direction) in the first vertical portion 311a. ) Is disposed below the first protrusion 311b, the second protrusion 311c extending in the 2-1 direction (Y1 direction) from one side of the first protrusion 311b, and the first protrusion 311b. 1 The third protrusion 311d extending in the 2-1st direction (Y1 direction) from the vertical portion 311a and the lower portion of the third protrusion 311d and disposed in the 2-1th direction in the first vertical portion 311a. And a fourth protrusion 311e extending in the Y1 direction).

Hereinafter, the first base electrode 311 and the second base electrode 312 are sequentially disposed in the 2-1 direction (Y1 direction), and the first extension electrode 321 and the second extension electrode 322 are semiconductors. The third base electrode 313 connected to the device is disposed on the first-first direction (X1 direction) side with reference to this. In addition, even when the third base electrode 313 does not exist, the first extension electrode 321 and the second extension electrode 322 are disposed above the first vertical line C1 in the 1-1 direction (X1 direction) region. Can be. Here, the first vertical line C1 is an imaginary line that bisects the substrate in the second direction (Y direction) as described above, and the first vertical line C2 is an imaginary line that bisects the substrate in the first direction (X direction). Is the line. In addition, below, one side is an outer side in the 2-1 direction (Y1 direction), and the other side means an outer side in the 2-2 direction (Y2 direction). And the upper side is the outer side in the 1-1 direction (X1 direction), the lower side is the outer side in the 1-2 direction (X2 direction). In addition, the meaning of each of the directions in one side, the other side, the upper side and the lower side described above is equally applied to the outer side, the other side, the upper side and the lower side. In addition, the first length L3 of the substrate may be 3 mm to 4.6 mm. However, it is not limited to this length.

Specifically, the first vertical portion 311a may be disposed on the left side of the second vertical line C2 in the second-second direction (Y2 direction) on the substrate. The first vertical portion 311a may be disposed adjacent to the left side of the substrate.

In this case, the first vertical portion 311a may be 550 μm to 840 μm having a width W2 in the second direction.

Next, the first protrusion 311b may be disposed above the first vertical line C1 and may extend from the first vertical portion 311a in the 2-1 direction (Y1 direction). The first extension electrode 321 may be disposed on the first protrusion 311b. In this case, the maximum width W3 between the first extension electrodes 321 on the other side of the first vertical portion 311a may be 740 μm to 1110 μm. The width W1 of the first extension electrode 321 may be 800 μm to 1200 μm. The same may be applied to the second extension electrode 322 described later.

In addition, the first protrusion 311b may be disposed on the left side of the second vertical line C2 and spaced apart from the second vertical line C2.

The minimum width W4 between one side surface of the first protrusion 311b and the first extension electrode 321 may be 80 μm to 120 μm. In addition, the minimum length L1 between the upper surface of the first protrusion 311b and the first extension electrode 321 may be 150 μm to 230 μm. In addition, the minimum length L2 between the bottom surface of the first protrusion 311b and the first extension electrode 321 may be 440 μm to 670 μm. The length L6 of the first extension electrode 321 and the second extension electrode 322 may be 800 μm to 1200 μm.

In addition, the second protrusion 311c may extend from the first protrusion 311b in the second-first direction (Y1 direction), and a portion thereof may overlap the second vertical line C2. A zener diode (not shown) may be disposed in the second protrusion 311c similarly to the sixth protrusion 312c described later.

In addition, the width W5 in the second direction of the second protrusion 311c may be 288 μm to 432 μm.

The third protrusion 311d may extend from the first vertical portion 311a in the second-first direction (Y1 direction). In this case, the width W7 of the third protrusion 311d which is an extended length may be 174 μm to 262 μm. In this case, the width W7 of the third protrusion 311d may be equal to the third separation distance d3. The third separation distance d3 may be the width of the groove disposed in the 2-2 direction (Y2 direction) from the upper portion of the third protrusion 311d based on one side of the third protrusion 311d contacting the semiconductor device. Similarly, the fourth separation distance d4 may be the width of the groove disposed in the second-second direction (Y2 direction) below the third protrusion 311d based on one side where the third protrusion 311d contacts the semiconductor element. have.

The third protrusion 311d may be disposed below the first protrusion 311b and the second protrusion 311c and below the first vertical line C1. In addition, the third protrusion 311d may be spaced apart from the second protrusion 311c by a fifth separation distance d5. The fifth separation distance d5 may be equal to the third separation distance d3.

In addition, the maximum width W6 of the first protrusion 311b and the third protrusion 311d may be 730 μm to 1100 μm.

In addition, the fourth protrusion 311e may be disposed below the third protrusion 311d, extend from the first vertical portion 311a in the 2-1 direction (Y1 direction), and be disposed below the second vertical line C2. Can be. The fourth protrusion 311e may be disposed below the first protrusion 311b, the second protrusion 311c, and the third protrusion 311d.

The second base electrode 312 is a second vertical portion 312a disposed in parallel with the first direction (X direction) and a fifth extending in the second-2 direction (Y2 direction) from the second vertical portion 312a. The protrusion 312b, the sixth protrusion 312c extending in the second-second direction (Y2 direction) from the other side of the fifth protrusion 312b, and disposed below the fifth protrusion 312b and the second vertical portion 312a. ) Is disposed below the seventh protrusion 312d and the seventh protrusion 312d extending in the second-second direction (Y2 direction), and extends in the second-second direction (Y2 direction) from the second vertical portion 312a. The eighth protrusion 312e may be provided.

The second base electrode 312 may be symmetrically formed with respect to the first base electrode 311 and the first vertical line C1. (Here, except for the third protrusion 311d)

That is, the second vertical portion 312a, the fifth protrusion 312b, the seventh protrusion 312d, and the eighth protrusion 312e may include the first vertical portion 311a, the second protrusion 311c, and the third protrusion 3. 311d) and the fourth protrusion 311e are formed symmetrically with respect to the first vertical line C1, respectively.

First, the second vertical portion 312a may be disposed on the right side in the second-first direction (Y1 direction) from the second vertical line C2 on the substrate. The second vertical portion 312a may be disposed adjacent to the right side of the substrate.

Next, the fifth protrusion 312b may be disposed above the first vertical line C1 and may extend from the second vertical portion 312a in the second-2 direction (Y2 direction). The second extension electrode 322 may be disposed on the fifth protrusion 312b. At this time, the maximum width W3 between the first extension electrode 321 on the other side of the first vertical portion 311a and the maximum between the second extension electrode 322 on one side of the second vertical portion 312a. The width can be the same.

In addition, the fifth protrusion 312b may be disposed on the right side of the second vertical line C2 and spaced apart from the second vertical line C2.

The sixth protrusion 312c may extend from the fifth protrusion 312b in the second-second direction (Y2 direction), and a portion of the sixth protrusion 312c may overlap the second vertical line C2. Like the second protrusion 311c described above, the sixth protrusion 312c may include a zener diode. The sixth protrusion 312c may be disposed below the second protrusion 311c, and a portion thereof may overlap in the first direction. However, the sixth protrusion 312c may have the other side spaced apart from one side of the first protrusion 311b by the first separation distance d1. The first separation distance d1 may be 80 μm to 120 μm.

The sixth protrusion 312c may have a maximum width in the first direction than the second protrusion 311c. However, this configuration may be changed by the arrangement, polarity, or the like of the zener diode.

The width of the sixth protrusion 312c in the second direction may be the same as the width W5 in the second direction of the second protrusion 311c.

The seventh protrusion 312d may extend from the second vertical portion 312a in the second-second direction (Y2 direction). In this case, the width of the seventh protrusion 312d which is an extended length may be the same as the width W7 of the third protrusion 311d.

In addition, the width of the seventh protrusion 312d may be equal to the third separation distance d3. The seventh protrusion 312d may be disposed below the fifth protrusion 312b and the sixth protrusion 312c and below the first vertical line C1.

In addition, the length L4 of the seventh protrusion 312d may be 990 μm to 1500 μm. The length of the seventh protrusion 312d may be the same as the length of the third protrusion 311d. In addition, the length of the third protrusion 311d may be the same as the length of the ninth protrusion 313b and the tenth protrusion 313c.

In addition, a semiconductor device may be disposed between the seventh protrusion 312d and the second protrusion 311d.

In addition, the maximum width of the fifth protrusion 312b and the seventh protrusion 312d may be equal to the maximum width W6 of the first protrusion 311b and the third protrusion 311d.

The eighth protrusion 312e may be disposed below the seventh protrusion 312d, extend from the second vertical portion 312a in the second-2 direction (Y2 direction), and be disposed below the second vertical line C2. . The eighth protrusion 312e may be disposed below the fifth protrusion 312b, the sixth protrusion 312c, and the seventh protrusion 312d.

The third base electrode 313 includes a 3-1 base electrode 313-1 and a 3-2 base electrode 313-2, and a 3-1 base electrode 313-1 and a third The two base electrodes 313-2 may have the same shape. Thus, the 3-1 base electrode 313-1 and the 3-2 base electrode 313-2 may be symmetrically disposed with respect to the second vertical line C2 and spaced apart from the second vertical line C2. Hereinafter, the shape of the third base electrode 313 will be described based on the 3-1 base electrode 313-1.

The 3-1 base electrode 313-1 is parallel in the first direction (X direction) and is below the second protrusion 311c, the third protrusion 311d, the fifth protrusion 312b, and the sixth protrusion 312c. The third vertical portion 313a disposed in the second ninth protrusion 313b extending in the second-second direction (Y2 direction) from the third vertical portion 313a and the second-1 in the third vertical portion 313a. Direction 313d extending in the direction (Y1 direction) and the eleventh protrusion 313d extending in the second-second direction (Y2 direction) from the third vertical portion 313a and disposed below the ninth protrusion 313b. ) And the 12th protrusion 313e extending in the 2-1 -th direction (Y1 direction) from the third vertical portion 313a.

Specifically, the third vertical portion 313a is disposed between the first vertical portion 311a and the second vertical portion 312a and between the first protrusion 311b, the second protrusion 311c, the fifth protrusion 312b, and the third. 6 may be disposed below the protrusion 312c. In an embodiment, the third vertical portion 313a may be disposed between the third protrusion 311d and the seventh protrusion 312d and between the fourth protrusion 311e and the eighth protrusion 312e.

The length L5 of the third vertical portion 313a may be 1250 μm to 1900 μm.

The ninth protrusion 313b may be disposed above the third vertical portion 313a and extend in the second-second direction (Y2 direction). The ninth protrusion 313b may be disposed to face the seventh protrusion 312d. The ninth protrusion 313b and the seventh protrusion 312d may be spaced apart from the second separation distance d2. The second separation distance d2 may be greater than the aforementioned first separation distance d1. By such a configuration, it is possible to prevent the electrical short between the neighboring base electrodes by the first intermediate layer at the time of coupling between the semiconductor element and the base electrode. For example, the second separation distance d2 may be 160 μm to 240 μm.

In addition, the second separation distance d2 may be smaller than the third separation distance d3. As a result, the current spreading may be increased since the area of each base electrode is increased while increasing the amount of the first intermediate layer introduced into the aforementioned groove, thereby reducing the electrical resistance as much as possible.

The tenth protrusion 313c may be symmetrically disposed with the ninth protrusion 313b based on the third vertical portion 313a. That is, the tenth protrusion 313c may be disposed above the third vertical portion 313a and extend in the second-first direction (Y1 direction).

The eleventh protrusion 313d may be disposed under the ninth protrusion 313b and may extend in the second-second direction (Y2 direction) from the lower portion of the third vertical portion 313a. The eleventh protrusion 313d may be disposed to face the fourth protrusion 311e.

The twelfth protrusion 313e may be disposed below the tenth protrusion 313c and may extend in the 2-1 -th direction (Y1 direction) from the bottom of the third vertical portion 313a. The twelfth protrusion 313e may be disposed to face the eighth protrusion 312e when the third base electrode 313 is one. However, in the present exemplary embodiment, the twelfth protrusion 313e may be disposed to face the eleventh protrusion 313d of the third-2 base electrode 313-2.

The maximum width W8 of the 3-1 base electrode 313-1 may be 830 μm to 1250 μm.

In addition, as described with reference to FIG. 4, the first base electrode 311, the second base electrode 312, and the third base electrode 313 may be electrically connected by the plurality of semiconductor devices 400. In this case, the width W9 in the second direction of the semiconductor device 400 may be 800 μm to 1400 μm.

The width W1 of the extension 320 and the width W9 of the semiconductor device 400 may have a ratio of 1: 0.4 to 1: 2.8. And the ratio of the width may preferably be 1: 0.5 to 1: 2.4, more preferably 1: 0.6 to 1: 2.0. In this case, when the ratio of the width is smaller than 1: 0.4, the extension may be larger than that of the semiconductor device, thereby increasing the size of the semiconductor device package. In addition, when the width ratio is greater than 1: 2.8, there may be a limit in which current spreading is reduced to the semiconductor device.

Referring to FIG. 7, the reflective member 200 may be disposed in the first through hole H1 and the second through hole H2, and the third base electrode may be spaced apart from the second base electrode to be electrically separated. .

FIG. 8 is a modification of FIG. 1, and FIG. 9 is another modification of FIG. 1.

Referring to FIG. 8, a semiconductor device package according to a modified example may include a substrate 100, a reflective member 200 disposed on the substrate 100, and an electrode unit disposed between the reflective member 200 and the substrate 100 ( 300, a semiconductor device 400 disposed on the electrode unit 300, a wavelength conversion layer 500 disposed on the semiconductor device 400, and a connection layer disposed below the substrate 100.

As described above with reference to FIGS. 1 and 2, the electrode part 300 may include a base part 310 and an extension part 320. However, the base unit 310 may include a first base electrode 311 and a second base electrode 312, and may not include a third base electrode. The semiconductor device package may include one semiconductor device 400.

In addition, as described above, the first base electrode 311 and the second base electrode 312 have a 2-1 direction (Y1 direction) and a 2-2 direction at an upper portion or a lower portion of a region in contact with the semiconductor element 400. It may include a groove extending in the (Y2 direction).

That is, the groove may be disposed between at least one of the third protrusion 311d and the second protrusion 311c and between the third protrusion 311d and the seventh protrusion 312d. In addition, the groove may be disposed in at least one of the seventh protrusion 312d and the fifth protrusion 312b and between the seventh protrusion 312d and the eighth protrusion 312e.

By such a configuration, the semiconductor device can be easily bonded to the third protrusion 311d, the ninth protrusion 313b, the tenth protrusion 313c, the seventh protrusion 312d, and the like through the first intermediate layer, and other adjacent bases. Electrical short between the electrodes can be prevented. For example, in the case where the first intermediate layer under the semiconductor element provides a junction between the semiconductor element and the base electrode by thermocompression, even if the first intermediate layer is melted and cured by heat, it is disposed in the groove and moved to another neighboring base electrode. You can prevent that.

Referring to FIG. 9, a semiconductor device package according to another modified example may include the substrate 100, the reflective member 200 disposed on the substrate 100, the reflective member 200, and the substrate 100, as described above. An electrode part 300 disposed on the semiconductor device 400, a semiconductor device 400 disposed on the electrode part 300, a wavelength conversion layer 500 disposed on the semiconductor device 400, and a connection layer disposed below the substrate 100. It may include.

In addition, the electrode part 300 includes a base part 310 and an extension part 320, and the base part 310 includes the first base electrode 311, the second base electrode 312, and the third base electrode. It may include. However, four third base electrodes may be provided, and five semiconductor devices 400 may be disposed in the semiconductor device package.

Descriptions of elements other than those described above with reference to FIGS. 8 and 9 may be equally described with reference to FIGS. 1 to 7.

The sterilization apparatus may include a semiconductor device according to the embodiment to sterilize a desired region. The sterilizer may be applied to household appliances such as water purifiers, air conditioners and refrigerators, but is not necessarily limited thereto. That is, the sterilization apparatus can be applied to all the various products (eg, medical devices) requiring sterilization.

Illustratively, the water purifier may be provided with a sterilizing device according to the embodiment for sterilizing the circulating water. The sterilization apparatus may be disposed at a nozzle or a discharge port through which water circulates to irradiate ultraviolet rays. At this time, the sterilization apparatus may include a waterproof structure.

The curing apparatus includes a semiconductor device according to an embodiment to cure various kinds of liquids. Liquids can be the broadest concept that includes all of the various materials that cure when irradiated with ultraviolet light. By way of example, the curing apparatus may cure various kinds of resins. Alternatively, the curing device may be applied to cure a cosmetic product such as a nail polish.

The lighting apparatus may include a light source module including a substrate and a semiconductor device of an embodiment, a heat dissipation unit for dissipating heat of the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside to provide the light source module. In addition, the lighting apparatus may include a lamp, a head lamp, or a street lamp.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflecting plate is disposed on the bottom cover, and the light emitting module may emit light. The light guide plate may be disposed in front of the reflective plate to guide the light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet or the like to be disposed in front of the light guide plate. The display panel is disposed in front of the optical sheet, the image signal output circuit supplies an image signal to the display panel, and the color filter may be disposed in front of the display panel.

The semiconductor device may be used as an edge type backlight unit or a direct type backlight unit when used as a backlight unit of a display device.

The semiconductor element may be a laser diode in addition to the above-described light emitting diode.

Like the light emitting device, the laser diode may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer having the above-described structure. In addition, although the p-type first conductive semiconductor and the n-type second conductive semiconductor are bonded to each other, an electro-luminescence phenomenon in which light is emitted when an electric current flows is used, but the direction of emitted light is used. There is a difference in and phase. That is, a laser diode may emit light having a specific wavelength (monochromatic beam) in the same direction by using a phenomenon called excited emission and a constructive interference phenomenon. Therefore, it can be used for optical communication, medical equipment and semiconductor processing equipment.

For example, a photodetector may be a photodetector, which is a type of transducer that detects light and converts its intensity into an electrical signal. Such photodetectors include photovoltaic cells (silicon, selenium), photoelectric devices (cadmium sulfide, cadmium selenide), photodiodes (eg PDs with peak wavelengths in visible blind or true blind spectral regions) Transistors, photomultipliers, phototubes (vacuum, gas encapsulation), IR (Infra-Red) detectors, and the like, but embodiments are not limited thereto.

In addition, a semiconductor device such as a photodetector may be manufactured using a direct bandgap semiconductor having generally excellent light conversion efficiency. Alternatively, the photodetector has various structures, and the most common structures include a pin photodetector using a pn junction, a Schottky photodetector using a Schottky junction, a metal semiconductor metal (MSM) photodetector, and the like. have.

Like a light emitting device, a photodiode may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above-described structure, and have a pn junction or pin structure. The photodiode operates by applying a reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and current flows. In this case, the magnitude of the current may be approximately proportional to the intensity of light incident on the photodiode.

Photovoltaic cells or solar cells are a type of photodiodes that can convert light into electrical current. The solar cell may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer having the above-described structure, similarly to the light emitting device.

In addition, through the rectification characteristics of a general diode using a p-n junction it can be used as a rectifier of an electronic circuit, it can be applied to an ultra-high frequency circuit and an oscillation circuit.

In addition, the semiconductor device described above is not necessarily implemented as a semiconductor and may further include a metal material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented by a p-type or n-type dopant. It may also be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Although described above with reference to the embodiments, which are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains should not be exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (10)

Board;
A reflection member disposed on the substrate and including a first through hole and a second through hole spaced apart from the first through hole;
A semiconductor device disposed in the first through hole;
An electrode part including a base part disposed between the substrate and the reflective member and an extension part extending upward from the base part; And
And a wavelength conversion layer disposed on the semiconductor element in the first through hole.
The extension part is disposed in the second through hole,
The ratio between the average width and the minimum width of the extension portion to the ratio between the average width and the maximum width is 1: 0.98 to 1: 1.02.
The method of claim 1,
The length ratio of the height of the extension portion and the width of the extension portion 1: 3 to 1:13 semiconductor package.
The method of claim 1,
The base portion,
A first base electrode; And
And a second base electrode spaced apart from the first base electrode.
The method of claim 1,
The first base electrode,
A first vertical portion disposed on one side of the substrate;
A first protrusion extending from the first vertical portion toward the second base electrode;
A second protrusion extending from the first protrusion toward the second base electrode;
A third protrusion extending from the first vertical portion toward the second base electrode and disposed below the first protrusion;
And a fourth protrusion extending from the first vertical portion toward the second base electrode and disposed below the third protrusion.
The method of claim 4, wherein
The second base electrode,
A second vertical portion disposed on the other side of the substrate;
A fourth protrusion extending from the first vertical portion toward the first base electrode;
A fifth protrusion extending from the fourth protrusion toward the first base electrode;
A sixth protrusion extending from the second vertical portion toward the first base electrode and disposed below the fourth protrusion;
A seventh protrusion extending from the second vertical portion toward the first base electrode and disposed below the sixth protrusion; And
And an eighth protrusion extending from the second vertical portion toward the first base electrode and disposed below the seventh protrusion.
The method of claim 5,
The extension part includes a first extension electrode and a second extension electrode,
The first extension electrode is disposed on the first protrusion,
The second extension electrode is disposed on the fourth protrusion.
The method of claim 5,
The third protrusion is spaced apart from the second protrusion and the fourth protrusion,
The seventh protrusion is spaced apart from the fifth protrusion and the eighth protrusion.
The method of claim 5,
Disposed between at least one of the third protrusion and the second protrusion and between the third protrusion and the seventh protrusion,
And a groove disposed between at least one of the seventh and fifth protrusions, and between the seventh and eighth protrusions.
The semiconductor device is disposed between the third protrusion and the seventh protrusion,
The minimum separation distance between the second protrusion and the sixth protrusion is less than the distance between the third protrusion and the seventh protrusion.
The method of claim 5,
The base unit is disposed between the first base electrode and the second base electrode, and comprises a third base electrode spaced apart from the first base electrode and the second base electrode;
The third base portion,
A third vertical portion;
A ninth protrusion extending from the third vertical portion toward the first base electrode;
A tenth protrusion extending from the third vertical portion toward the second base electrode;
An eleventh protrusion extending from the third vertical portion toward the first base electrode and disposed below the ninth protrusion; And
And a twelfth protrusion extending from the third vertical portion toward the second base electrode and disposed below the tenth protrusion.
The method of claim 9,
The ninth protrusion is disposed to face the third protrusion,
The eleventh protrusion is disposed to face the fourth protrusion.

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